Effect Of Insulating Layer Research Articles

The thickness effect of insulator layer between the semiconductor and metal contact on C-V characteristics of Al/Si3N4/p-Si device

The thickness effect of insulator layer between the semiconductor and metal contact on C-V characteristics of Al/Si3N4/p-Si device

The Electrical Characterization Effect of Insulator Layer between Semiconductor and Metal

Metal-yalitkan-yariiletken (MIS) aygitlar elektronik ve optoelektronikteki onemlerinden dolayi calisilmaktadir. Bu onem aygitlarin yuksek dielektrik sabitine, depolama tabakasi ve kapasitans ozelliklerine sahip olmalarindan kaynaklanmaktadir. Bu yuzden Si 3 N 4 tabakasi p-tipi Si uzerine PECVD teknigi kullanilarak buyutulmus, kalinligi elipsometre ile 5 nm olarak olculmustur ve Al kontak sayesinde MIS yapisi elde edilmistir. Elde edilen Al/p-Si yapisi uzerine Si 3 N 4 tabakasinin etkisi arastirilmistir. Bunun icin aygitin elektrik karakterizasyonlari ileri ve ters beslem I-V , C–V ve G-V olcumleriyle yapilmis ve yalitkan Si 3 N 4 tabakanin diyot ozelliklerini oldukca etkiledigi gorulmustur. Ara yuzey halleri ( N ss ), seri direnc ( R s ) ve diger bazi elektriksel parametrelerin aygit uzerine etkileri I-V ve C–V olcumlerinden hesaplanarak arastirilmistir. C-V olcumlerinden aygitin memristor bir yapi gibi davrandigi tespit edilmistir

Analysis of interface states and series resistance for Al/PVA:n-CdS nanocomposite metal–semiconductor and metal–insulator–semiconductor diode structures

This paper presents the fabrication and character- ization of Al/PVA:n-CdS (MS) and Al/Al2O3/PVA:n-CdS (MIS) diode. The effects of interfacial insulator layer, in- terface states (Nss) and series resistance (Rs) on the elec- trical characteristics of Al/PVA:n-CdS structures have been investigated using forward and reverse bias I -V , C-V , and G/w-V characteristics at room temperature. Al/PVA:n-CdS diode is fabricated with and without insulator Al2O3 layer to explain the effect of insulator layer on main electrical pa- rameters. The values of the ideality factor (n), series resis- tance (Rs) and barrier height (φb) are calculated from ln(I ) vs. V plots, by the Cheung and Norde methods. The energy density distribution profile of the interface states is obtained from the forward bias I -V data by taking into account the bias dependence ideality factor (n(V )) and effective barrier height (φe) for MS and MIS diode. The Nss values increase from mid-gap energy of CdS to the bottom of the conduc- tance band edge for both MS and MIS diode.

Forward and reverse bias current–voltage characteristics of Au/n-Si Schottky barrier diodes with and without SnO 2 insulator layer

The effects of interfacial insulator layer, interface states ( N ss) and series resistance ( R s) on the electrical characteristics of Au/n-Si structures have been investigated using forward and reverse bias current–voltage ( I– V) characteristics at room temperature. Therefore, Au/n-Si Schottky barrier diodes (SBDs) were fabricated as SBDs with and without insulator SnO 2 layer to explain the effect of insulator layer on main electrical parameters. The values of ideality factor ( n), R s and barrier height ( Φ Bo) were calculated from ln( I) vs. V plots and Cheung methods. The energy density distribution profile of the interface states was obtained from the forward bias I– V data by taking bias dependence of ideality factor, effective barrier height ( Φ e) and R s into account for MS and MIS SBDs. It was found that N ss values increase from at about mid-gap energy of Si to bottom of conductance band edge of both SBDs and the MIS SBD’s N ss values are 5–10 times lower than those of MS SBD’s. An apparent exponential increase from the mid-gap towards the bottom of conductance band is observed for both SBDs’ (MS and MIS) interface states obtained without taking R s into account.

Effect of insulation layer on transcribability and birefringence distribution in optical disk substrate

As the need for information storage media with high storage density increases, digital video disks (DVDs) with smaller recording marks and thinner optical disk substrates than those of conventional DVDs are being required. Therefore, improving the replication quality of land-groove or pit structure and reducing the birefringence distribution are emerging as important criteria in the fabrication of high-density opti- cal disk substrates. We control the transcribability and distribution of birefringence by inserting an insulation layer under the stamper during injection-compression molding of DVD RAM substrates. The effects of the insulation layer on the geometrical and optical properties, such as transcribability and birefringence distribution, are examined experimen- tally. The inserted insulation layer is found to be very effective in improv- ing the quality of replication and leveling out the first peak of the gapwise birefringence distribution near the mold wall and reducing the average birefringence value, because the insulation layer retarded the growth of the solidified layer. © 2002 Society of Photo-Optical Instrumentation Engineers.

단열층이 DVD 기판의 복굴절 및 전사성에 미치는 영향

단열층이 DVD 기판의 복굴절 및 전사성에 미치는 영향