A new transistor model is described which represents a generalization of the Ebers-Moll form and the Narud-Meyer form. The model is obtained by writing the two-port equations for the base region, calculating the alphas, and approximating the hyperbolic functions therein with Padé ratios of polynomials. By systematically choosing the degree of the polynomials one obtains a model having the form of, for example, the Ebers-Moll model, the Narud-Meyer model, or a new case with two poles and one zero.