Dynamic Switching Research Articles

Mechanically induced dynamic QBIC-BIC switching and sensing performance enhancement using elastomer-based double resonant gratings

Mechanically induced dynamic QBIC-BIC switching and sensing performance enhancement using elastomer-based double resonant gratings

Photon-Induced Ultrafast Multitemporal Programming of Terahertz Metadevices.

Dynamic terahertz (THz) metasurface can feature modulated and multiplexed electromagnetic functionalities, important for wave-based computation, six-generation communications, and other applications. The versatile dynamic switching typically relies on a series of complex or incompatible multifield activations, with excessive system complexity, additional loss, slow modulation speed, and inertial time-varying properties, limiting more widespread applications. Here, a photon-induced ultrafast programmable THz metadevice is reoprted in time-frequency dimensions with polarization-decoupled temporal responses. By the pixelated design with multi-materials and triggering switches, the multimodal modulation transcends the constraints inherent in materials, enabling the ultrafast programmable temporal evolution. All the resonances can be independently programmed at the working band from 0.6 to 2 THz. The tri-temporal (with switching time of 1.25, 1, and 4.75ps) and bi-temporal (with switching time of 2.25 and 4.75ps) dynamic manipulations are performed by all-optical driven molecularization process of hybrid metasurfaces loaded with silicon (Si)and germanium (Ge) under different polarizations. Combining these features, the temporally programmed THz logic gates are last experimentally demonstrated, possessing basic operation of XNOR, NOR, and OR,as a proof-of-concept application. This reported light-driven programmable THz flat-optics allows ultrafast hybrid molecularization processes and new possibilities for miniaturized, flexible, multifunctional, and temporally programmable integrated devices.

Zipper‐Like Dynamic Switching of Coordination Bonds Gives a Polar Bimetallic Halide Toward Self‐Driven X‐Ray Detection

AbstractPolar molecular crystals hold a promise for controlling bulk physical properties originated in their unique switchable polarity via structural transformation. However, the mechanisms for switching polarization are mainly limited to displacive and disorder‐order phase transitions, which rarely involve the reconstruction of chemical bonds. Here, we have switched and tuned electric polarization in a bimetallic halide, (Neopentylammonium)4AgBiBr8 (1), as verified by light‐excited pyroelectric effect. Most notably, its Ag−Br coordination bonds show a zipper‐like dynamic switching behavior from the ‘locked’ to ‘unlocked’ state, namely, reconstruction of chemical bonds. Coupling with the dynamic ordering of organic cations, this bond‐switching transition makes a contribution to switchable polarization of 1. As expected, its polarity creates pyroelectric effect for self‐driven X‐ray detection with high sensitivity (3.8×103 μC Gy−1 cm−2) and low limit of detection (4.8 nGy s−1). This work on the bond‐switching mechanism provides an avenue to design polar molecular candidate for smart optoelectronic devices.

Zipper-Like Dynamic Switching of Coordination Bonds Gives a Polar Bimetallic Halide Toward Self-Driven X-Ray Detection.

Polar molecular crystals hold a promise for controlling bulk physical properties originated in their unique switchable polarity via structural transformation. However, the mechanisms for switching polarization are mainly limited to displacive and disorder-order phase transitions, which rarely involve the reconstruction of chemical bonds. Here, we have switched and tuned electric polarization in a bimetallic halide, (Neopentylammonium)4AgBiBr8 (1), as verified by light-excited pyroelectric effect. Most notably, its Ag-Br coordination bonds show a zipper-like dynamic switching behavior from the 'locked' to 'unlocked' state, namely, reconstruction of chemical bonds. Coupling with the dynamic ordering of organic cations, this bond-switching transition makes a contribution to switchable polarization of 1. As expected, its polarity creates pyroelectric effect for self-driven X-ray detection with high sensitivity (3.8×103 μC Gy-1 cm-2) and low limit of detection (4.8 nGy s-1). This work on the bond-switching mechanism provides an avenue to design polar molecular candidate for smart optoelectronic devices.

Impact of Negative Gate Stress on the Reliability of p-GaN Gate HEMT Devices under Dynamic Switching Operation

Abstract In this study, we investigated the impact of single stress (negative gate bias stress) and combined stress (both negative gate bias stress and drain voltage stress) on the instability of the threshold voltage (VTH) on p-GaN gate HEMT devices during dynamic switching operation. The dynamic VTH shift during pulsed negative gate bias stress was investigated for the first time. The VTH exhibits an initial rapid increase upon the initiation of stress and a slight decrease with increasing stress time. For the applied stresses of VGS = -1/-2/-3 V, the VTH shift values were, respectively, 0.12/0.16/0.19 V at the stress time of 100 s. Under the stress of VGS = -3 V and VDS = 100 V, the shift value of VTH was 0.61 V. After the combined stress, the saturation and off-state leakage currents exhibited a significant reduction, with the latter decreasing by one order of magnitude after the reverse voltage stress. When only a negative gate bias stress is applied, the degradation of the device can recover quickly after the stress is removed. In contrast, the positive shift in VTH caused by the drain-voltage stress is difficult to recover. Furthermore, the mechanisms underlying the VTH shift mentioned above were explored. Under single-stress conditions, the shift in VTH is associated with shallow traps that trap electrons. Meanwhile, under the combined stress, the degradation of Vth was also affected by the deep-level traps.

Bumpless transfer control of switched systems: A dynamic event-triggering switching control approach

This paper studies the bumpless transfer (BT) control issue for switched systems with event-triggered (ET) control input. The aim is to reduce the jumps in control input at both switching and triggering points, while capturing the stability of the switched systems. First, a dynamic ET program is constructed with the triggering condition based on the level of suppression of input signal jumps. This not only reduces input jumps at triggering points, but also prevents Zeno behavior caused by triggering within the operation time interval of subsystems. Second, a sampled state-dependent switching signal is designed to ensure a dwell time for subsystems to prevent Zeno phenomenon induced by switching. Further, a switched ET controller with alleviated jumps is designed. Third, conditions are obtained to simultaneously reach both stabilization and BT of switched systems. Finally, the effectiveness of the theoretical results is demonstrated through a simulation of an engine model.

Topology-optimized terahertz real-time reconfigurable multifunctional liquid-crystal-coding metasurface

In this paper, a reflective terahertz reconfigurable multifunctional coding metasurface based on topology optimization using liquid crystal (LC) is presented. First, the LC metasurface unit is topologically optimized using the NSGA-II multi-objective optimization algorithm. By applying the bias voltage to dynamically adjust the dielectric constant of the LC, the metasurface unit is capable of 2-bit coding at the frequency of 0.67 THz. Then, based on the designed metasurface unit, the array arrangements of the coding metasurface are reversely designed, which makes the metasurface realize flexible control and dynamic switching between beam assignment and vortex beam generation. The results show that for the beam assignment, the single-beam and multi-beam control can be realized with the reflected electromagnetic waves at continuous arbitrary angles in the range of elevation angle of 40° and azimuth angle of 360°. Moreover, the elevation angle and azimuth angle of each beam in the multi-beam can be controlled independently. Using the Fourier convolution addition operation, the control range of the single-beam elevation angle can be expanded. For the vortex beam, the single vortex beam and the multi-vortex beam can be generated in the range of elevation angle of 40° and azimuth angle of 360° with topological charges l=±1, ±2, ±3 at arbitrary angles. This provides flexibility and diversity in the generation of vortex beams. Therefore, the proposed terahertz LC metasurface can realize flexible control of reconfigurable functions and has certain application prospects in terahertz communication, phased array radar, and vortex radar.

Enhancing improved advection upstream splitting method on triangular grids: A hybrid approach for improved stability and accuracy in compressible flow simulations

This paper introduces NAUSM+M+AUFS (New Improved Advection Upstream Splitting Method Plus Artificially Upstream Flux Vector Splitting), a novel hybrid computational scheme for simulating compressible flows on triangular grids. The AUSM+M (Improved Advection Upstream Splitting Method) method is enhanced through two key modifications to boost numerical stability and robustness in high Mach number and hypersonic flows. The first modification redefines the interfacial numerical sound velocity, reducing shock anomalies and improving shock-capturing by integrating velocity and characteristic sound speed parameters. The second modification addresses the insufficiency of the pressure flux dissipation term at supersonic speeds by introducing a formulation that increases dissipation proportionally to the Mach number, thereby enhancing performance in high-speed flows. These enhancements constitute the NAUSM+M method. The NAUSM+M+AUFS scheme combines the strengths of NAUSM+M and AUFS (Artificially Upstream Flux Vector Splitting) methods, particularly in overcoming the limitations of NAUSM+M in handling shock instabilities and the carbuncle phenomenon on structure triangular grids. A dynamic switching function adjusts the weighting between NAUSM+M and AUFS, optimizing accuracy and stability based on local flow conditions. Numerical tests demonstrate that NAUSM+M+AUFS significantly outperforms AUSM+M, NAUSM+M, and AUFS, effectively eliminating the carbuncle phenomenon and providing smooth shock wave contours. In steady flow analysis, the new hybrid method achieves convergence speeds comparable to AUFS and shows 15% to 45% superior convergence accelerating than AUSM+M, depending on the convergence rate. In addition, in steady flow analysis, the accuracy of NAUSM+M+AUFS is 46% better than that of AUFS. This approach represents a significant advancement, offering a robust, accurate, and efficient solution for high-speed aerodynamic simulations, with broad applicability across various compressible flow challenges.

Intrinsic Magnetocrystalline Anisotropy Induced 3m-Symmetry Dependent Field-Free Switching in Epitaxial Garnet Films.

The electrical control of perpendicular magnetization without the need for external magnetic fields holds significant potential for next-generation spintronic devices. In this Letter, we have identified a 3m-symmetry dependent field-free switching phenomenon in (111)-oriented Tm_{3}Fe_{5}O_{12} single-crystal films capped with a platinum (Pt) layer. We demonstrate that this distinctive property arises due to the spontaneous breaking of mirror symmetry in magnetocrystalline anisotropy (MCA) for (111)-oriented magnetic films with a cubic structure, which results in a local out-of-plane MCA effective field with a 3m-symmetry dependence on the azimuth angle when the magnetization lies in the (111) plane. The observed field-free switching, facilitated by this MCA effective field, is validated by numerical simulations based both on macro-spin model and on micromagnetic theory. Our findings not only underscore the instrumental role of intrinsic MCA in enabling field-free magnetization switching but also enrich the fundamental understanding of the underlying switching dynamics.

Switching dynamics in Al/InAs nanowire-based gate-controlled superconducting switch

The observation of the gate-controlled supercurrent (GCS) effect in superconducting nanostructures increased the hopes for realizing a superconducting equivalent of semiconductor field-effect transistors. However, recent works attribute this effect to various leakage-based scenarios, giving rise to a debate on its origin. A proper understanding of the microscopic process underlying the GCS effect and the relevant time scales would be beneficial to evaluate the possible applications. In this work, we observed gate-induced two-level fluctuations between the superconducting state and normal state in Al/InAs nanowires (NWs). Noise correlation measurements show a strong correlation with leakage current fluctuations. The time-domain measurements show that these fluctuations have Poissonian statistics. Our detailed analysis of the leakage current measurements reveals that it is consistent with the stress-induced leakage current (SILC), in which inelastic tunneling with phonon generation is the predominant transport mechanism. Our findings shed light on the microscopic origin of the GCS effect and give deeper insight into the switching dynamics of the superconducting NW under the influence of the strong gate voltage.

Fast switching Ga2O3 Schottky barrier power diode with beveled-mesa and BaTiO3 field plate edge termination

Power devices rely on ideal edge termination to suppress the electric field crowding and avoid premature breakdown before the material's critical field is reached. In this work, a hybrid electric field management configuration, featuring the combination of beveled-mesa (BM) termination and high-k oxide BaTiO3 field plate (FP), was implemented in Ga2O3 Schottky barrier diodes (SBDs). This BMFP-SBD realizes a breakdown voltage (BV) of 1.7 kV with extremely low reverse leakage current, outperforming the BM terminated SBD with BV of 0.64 kV and bare SBD with BV of 0.22 kV. Based on the temperature-dependent reverse characteristics, the dominant leakage mechanism transforms from Poole–Frenkel (P–F) emission in BM-SBD to variable-range-hopping (VRH) in BMFP-SBD at high bias. In particular, under switching conditions of di/dt up to 420 A/μs, the BMFP-SBD exhibits superior dynamic switching characteristics with a short reverse recovery time of 10.1 ns, which are comparable with those in advanced commercial SiC SBDs. These findings underscore the potential of Ga2O3 SBD enabled by BM and high-k FP edge termination for high-speed and high-voltage power electronics applications.

Mechanism of frequency-dependent gate breakdown in p-GaN/AlGaN/GaN HEMTs

In this Letter, time-dependent gate breakdown (TDB) characteristics under dynamic switching conditions were investigated in p-GaN/AlGaN/GaN high-electron-mobility transistors (HEMTs) with either Schottky-type or Ohmic-type gates. The dynamic TDB of the Schottky-type devices increased with frequencies ranging from 100 Hz to 100 kHz, while that of the Ohmic-type devices remained frequency-independent. This was analyzed by the frequency-dependent electroluminescence (EL) characteristics on both types of devices with semi-transparent gate electrodes. The electroluminescence (EL) emission intensity of Schottky-type devices increased with elevated frequencies, notably for blue and ultraviolet emissions, which exhibited a pronounced positive correlation with frequency. In contrast, the EL emissions of Ohmic-type devices were frequency-independent. Energy band diagrams were drawn to explain the different TDB and EL behaviors between two types of devices. The frequency-enhanced EL emissions of the Schottky-type devices indicated the frequency-enhanced hole injection and radiative recombination, which then suppressed the hot-electron effects on the metal/p-GaN junction and enhanced the dynamic TDB in p-GaN/AlGaN/GaN HEMTs.

Dynamic Phosphorescence/Fluorescence Switching in Hybrid Metal Halides Toward Time‐Resolved Multi‐Level Anti‐Counterfeiting

AbstractHybrid metal halides (HMHs) with time‐resolved luminescence behavior promise to be a breakthrough in multi‐level anti‐counterfeiting, but controlling the dynamic switching between phosphorescence and fluorescence is extremely challenging. Herein, an array of 0D HMHs is constructed by screening the π‐conjugated ligand with room‐temperature phosphorescence (RTP). Compared to the organic chromophore, (ETPP)2ZrCl6 possesses a misaligned stacking and rigid structure, contributing to an improved phosphorescence quantum yield (ΦP = 27.50%) and an extended phosphorescence lifetime (τ = 0.6234 s), as the intervening of inorganic unit [ZrCl6]2− suppresses the energy losses caused by nonradiative relaxation and prompts the intersystem crossover (ISC) process. Not only that, the interplay of phosphorescence‐fluorescence dual‐mode emission can be intelligently controlled by doping the active metal Te4+, resulting in a dynamic switching between RTP phosphorescence and self‐trapped exciton (STE) fluorescence. DFT calculations reveal the governing origins of RTP‐STE from the intermolecular ISC channels and spin‐orbit coupling (SOC) coefficients. These precise images into periodic pixelated arrays enable the multi‐level anti‐counterfeiting and information encryption. This work proposes a fluorescence‐phosphorescence co‐modulating strategy under the premise of dissecting the structural origins for optimizing RTP phosphorescence, which paves the way for designing high‐security‐level anti‐counterfeiting materials.

Gene and transcript expression patterns, coupled with isoform switching and long non-coding RNA dynamics in adipose tissue, underlie the longevity of Ames dwarf mice.

Our study investigates gene expression in adipose tissue of Ames dwarf (df/df) mice, whose deficiency in growth hormone is linked to health and extended lifespan. Recognizing adipose tissue influence on metabolism, aging, and related diseases, we aim to understand its contribution to the health and longevity of df/df mice. We have identified gene and transcript expression patterns associated with critical biological functions, including metabolism, stress response, and resistance to cancer. Intriguingly, we identified genes that,despite maintaining unchanged expression levels, switch between different isoforms, impacting essential cellular functions such as tumor suppression, oncogenic activity, ATP transport, and lipid biosynthesis and storage. The isoform switching is associated with changes in protein domains, retention of introns, initiation of nonsense-mediated decay, and emergence of intrinsically disordered regions. Moreover, we detected various alternative splicing events that may drive these structural alterations. We also found changes in the expression of long non-coding RNAs (lncRNAs) that may be involved in the aging process and disease resistance by regulating crucial genes in survival and metabolism. Through weighted gene co-expression network analysis, we have linked four lncRNAs with 29 genes, which contribute to protein complexes such as the Mili-Tdrd1-Tdrd12 complex. Beyond safeguarding DNA integrity, this complex also has a wider impact on gene regulation, chromatin structure, and metabolic control. Our detailed investigation provides insight into the molecular foundations of the remarkable health and longevity of df/df mice, emphasizing the significance of adipose tissue in aging and identifying new avenues for health-promoting therapeutic strategies.

Time-reversal symmetry breaking in the chemosensory array reveals a general mechanism for dissipation-enhanced cooperative sensing

The Escherichia coli chemoreceptors form an extensive array that achieves cooperative and adaptive sensing of extracellular signals. The receptors control the activity of histidine kinase CheA, which drives a nonequilibrium phosphorylation-dephosphorylation reaction cycle for response regulator CheY. Cooperativity and dissipation are both important aspects of chemotaxis signaling, yet their consequences have only been studied separately. Recent single-cell FRET measurements revealed that kinase activity of the array spontaneously switches between active and inactive states, with asymmetric switching times that signify time-reversal symmetry breaking in the underlying dynamics. Here, we present a nonequilibrium lattice model of the chemosensory array, which demonstrates that the observed asymmetric switching dynamics can only be explained by an interplay between the dissipative reactions within individual core units and the cooperative coupling between neighboring units. Microscopically, the switching time asymmetry originates from irreversible transition paths. The model shows that strong dissipation enables sensitive and rapid signaling response by relieving the speed-sensitivity trade-off, which can be tested by future single-cell experiments. Overall, our model provides a general framework for studying biological complexes composed of coupled subunits that are individually driven by dissipative cycles and the rich nonequilibrium physics within.

An efficient device model for ferroelectric thin-film transistors

Ferroelectric thin-film transistors (Fe-TFTs) have promising potential for flexible electronics, memory, and neuromorphic computing applications. Here, we report on a physics-based efficient device model for Fe-TFTs that effectively describes memory switching and device I–V characteristics. This model combines a stochastic multi-domain description of FE switching dynamics with a virtual source treatment of TFT device characteristics. It demonstrates that the memory window of Fe-TFTs depends on the amplitude and duration of the applied voltage pulses, thus suggesting quantitative means of programming and control. Additionally, we introduce a machine-learning-enabled method to automatically generate optimal voltage pulses for accurately programming multiple intermediate FE states, which is crucial for multi-bit memory and neuromorphic computing applications. To showcase the model’s applications, we simulate a 4×4 crossbar array circuit based on Fe-TFTs, highlighting its utility in performing multiply-accumulate computing operations. This small array can achieve a high speed of ∼1.28 tera operations per second (OPS) and a power efficiency of ∼0.43 W/PetaOPS. The model developed here is valuable for exploring the capabilities of Fe-TFTs in future flexible memory and computing technologies.

The Arrhenius law prefactor in permalloy mesoscale systems

The Arrhenius equation was used to describe the dynamics of two-state switching in mesoscale, ferromagnetic particles. Using square permalloy dots as an idealized two-state switching system, measurements of the prefactor of the Arrhenius law changed by 26 decades over barrier heights from 30 to 700 meV. Measurements of the prefactor ratios for a two well system revealed significant deviations from the common interpretation of the Arrhenius law. The anomalous Arrhenius prefactors and the prefactor ratios can be fitted to a modified model that includes entropic contributions to two-state transitions. Similar considerations are likely for the application of the Arrhenius law to other mesoscale systems.

Knowledge source switching under state interventions of latecomer regions: A case study of Shenzhen

This paper aims to unpack the process and analyze the mechanisms of knowledge source switching in latecomer regions that have evolved from peripheral to core positions. Drawing on four decades of matched patent-company data from Shenzhen, we classify patents into various knowledge classifications and calculate their percentage changes to observe the dynamics of knowledge source switching. Furthermore, we employ Difference-in-Differences (DiD) estimation to examine the causal effects of state interventions on this dynamic. The findings indicate that Shenzhen's knowledge sources have switched from multinational corporations (MNCs) and foreign subsidiaries to global inventors. Notably, state interventions exhibit a significant positive causal effect on this dynamic, particularly following the implementation of independent innovation policies. These findings contribute to the cross-fertilization of regional innovation studies and the Global Production Networks (GPN) approach, highlight the critical role of the state in ensuring the right and dynamic mode of global knowledge sourcing and offer implications for local innovation policies in latecomer regions.

Quantum tunneling high-speed nano-excitonic modulator

High-speed electrical control of nano-optoelectronic properties in two-dimensional semiconductors is a building block for the development of excitonic devices, allowing the seamless integration of nano-electronics and -photonics. Here, we demonstrate a high-speed electrical modulation of nanoscale exciton behaviors in a MoS2 monolayer at room temperature through a quantum tunneling nanoplasmonic cavity. Electrical control of tunneling electrons between Au tip and MoS2 monolayer facilitates the dynamic switching of neutral exciton- and trion-dominant states at the nanoscale. Through tip-induced spectroscopic analysis, we locally characterize the modified recombination dynamics, resulting in a significant change in the photoluminescence quantum yield. Furthermore, by obtaining a time-resolved second-order correlation function, we demonstrate that this electrically-driven nanoscale exciton-trion interconversion achieves a modulation frequency of up to 8 MHz. Our approach provides a versatile platform for dynamically manipulating nano-optoelectronic properties in the form of transformable excitonic quasiparticles, including valley polarization, recombination, and transport dynamics.

Switchable Topologically Chiral [2]Catenane as Multiple Resonance Thermally Activated Delayed Fluorescence Emitter for Efficient Circularly Polarized Electroluminescence.

Aiming at the fabrication of circularly polarized organic light-emitting diodes (CP-OLEDs) with high dissymmetry factors (gEL) and color purity through the employment of novel chiral source, topologically chiral [2]catenanes were first utilized as the key chiral skeleton to construct novel multi-resonance thermally activated delayed fluorescence (MR-TADF) emitters. Impressively, the efficient chirality induction and unique switchable feature of topologically chiral [2]catenane not only lead to a high |gPL| value up to 1.6 × 10-2 but also facilitate in situ dynamic switching of the full-width at half-maximum (FWHM) and circularly polarized luminescence (CPL). Furthermore, the solution-processed CP-OLEDs based on the resultant topologically chiral emitters exhibit reveal narrow FWHM of 36 nm, maximum external quantum efficiency of 17.6%, and CPEL with |gEL| of 2.1 × 10-3. This study demonstrates the successful construction of the first CP-MR-TADF emitters based on topological chirality with the highest |gPL| among the reported CP-MR-TADF emitters and excellent device performance to the best of our knowledge. Moreover, it endowed the MR-TADF emitter with distinctive switchable CPL performances, thus providing a novel design strategy as well as a promising platform for developing intelligent CP-OLEDs.