AbstractWe have carried out fluorescence lifetime measurements using time correlated single photon counting (TCSPC) for a cyanine dye near the silicon surface. The measurements have been carried out for both (100) and (111) crystal orientations of the silicon surface, showing the dependence of energy transfer rate as a function of the separation between the dye monolayer and the silicon surface. Langmuir Blodgett fatty acid layers were used to create a multistep structure and a monolayer of a cyanine dye was deposited on top of the stepped structure. Spectroscopic ellipsometry has been used to measure the thickness of the fatty acid steps and provide an accurate estimate of the distance of the dye monolayer to the silicon surface. Time resolved emission spectra and fluorescence decay curves were measured with a single photon picosecond time correlated system. We find that the fluorescence lifetime of the dye monolayer is significantly shortened when present close to the silicon surface signifying efficient energy transfer. The dissipation of the excitation energy near silicon is explained using the classical theory developed for metals and a deviation is observed for distances close to the silicon surface (d<5nm). The model can be reconciled with the observed data by modifying the value of the silicon extinction coefficient which can provide an insight into the energy transfer process in the near field dye-silicon interaction.
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