Dry Etching Method Research Articles

Towards atomic-scale smooth surface manufacturing of β-Ga2O3 via highly efficient atmospheric plasma etching

Abstract The highly efficient manufacturing of atomic-scale smooth β-Ga2O3 surface is fairly challenging because β-Ga2O3 is a typical difficult-to-machine material. In this study, a novel plasma dry etching method named plasma-based atom-selective etching (PASE) is proposed to achieve the highly efficient, atomic-scale, and damage-free polishing of β-Ga2O3. The plasma is excited through the inductive coupling principle and carbon tetrafluoride is utilized as the main reaction gas to etch β-Ga2O3. The core of PASE polishing of β-Ga2O3 is the remarkable lateral etching effect, which is ensured by both the intrinsic property of the surface and the extrinsic temperature condition. As revealed by density functional theory-based calculations, the intrinsic difference in the etching energy barrier of atoms at the step edge (2.36 eV) and in the terrace plane (4.37 eV) determines their difference in the etching rate, and their etching rate difference can be greatly enlarged by increasing the extrinsic temperature. The polishing of β-Ga2O3 based on the lateral etching effect is further verified in the etching experiments. The Sa roughness of β-Ga2O3 (001) substrate is decreased from 14.8 to 0.057 nm within 120 s, and the corresponding material removal rate reaches up to 20.96 μm/min. The polished β-Ga2O3 displays significantly improved crystalline quality and photoluminescence intensity, and the polishing effect of PASE is independent of the crystal faces of β-Ga2O3. In addition, the competition between chemical etching and physical reconstruction, which is determined by temperature and greatly affects the surface state of β-Ga2O3, is deeply studied for the first time. These findings not only demonstrate the high-efficiency and high-quality polishing of β-Ga2O3 via atmospheric plasma etching but also hold significant implications for guiding future plasma-based surface manufacturing of β-Ga2O3.

Aspect Ratio-Dependent Etching in Silicon using XeF2: Experimental Investigation and Comparative Analysis with Dry Etching Methods

Abstract Silicon machining plays a crucial role in shaping three-dimensional structures for Micro-Electro-Mechanical Systems (MEMS) applications. This study investigates Aspect Ratio Dependent Etching (ARDE) across various silicon etching processes, with a particular focus on Xenon Difluoride (XeF2) etching, in comparison to Reactive Ion Etching (RIE) and Deep Reactive Ion Etching (DRIE).By exploring different etching parameters, the study highlights the presence of ARDE in both plasma and non-plasma etching processes. Additionally, it is demonstrated that ARDE can be modeled by a saturating exponential function through experimental adjustment of parameters, enabling the prediction of etching profiles.

Nonhalogen Dry Etching of Metal Carbide TiAlC by Low-Pressure N2/H2 Plasma at Room Temperature.

Ternary metal carbide TiAlC has been proposed as a metal gate material in logic semiconductor devices. It is a hard-to-etch material due to the low volatility of the etch byproducts. Here, a simple, highly controllable, and dry etching method for TiAlC has been first presented using nonhalogen N2/H2 plasmas at low pressure (several Pa) and 20 °C. A capacitively coupled plasma etcher was used to generate N2/H2 plasmas containing active species, such as N, NH, and H to modify the metal carbide surface. The etch rate of TiAlC was obtained at 3 nm/min by using the N2/H2 plasma, whereas no etching occurred with pure N2 plasma or pure H2 plasma under the same conditions. The surface roughness of the TiAlC film etched by N2/H2 plasma was controlled at the atomic level. A smooth etched surface was achieved with a root-mean-square roughness of 0.40 nm, comparable to the initial roughness of 0.44 nm. The plasma properties of the N2/H2 plasmas were diagnosed by using a high-resolution optical emission spectrometer, detecting the NH molecular line at 336 nm. The etching behavior and plasma-surface reaction between N2/H2 plasma and TiAlC were investigated by using in situ spectroscopic ellipsometry, in situ attenuated total reflectance-Fourier transform infrared spectrometry, and X-ray photoelectron spectroscopy. The findings indicate that the N-H, C-N, and Ti(Al)-N bonds form on the TiAlC surface etched by the N2/H2 plasmas. The mechanism for etching of TiAlC involving transformation reactions between inorganic materials (metal carbides) and inorganic etchants (N2/H2 plasma) to form volatile organic compounds such as methylated, methyl-aminated, and aminated metals is proposed. Nonhalogen or nonorganic compound etchants were used during the etching process. The study provides useful insights into microfabrication for large-scale integrated circuits.

The Synthesis and Assembly Mechanism of Micro/Nano-Sized Polystyrene Spheres and Their Application in Subwavelength Structures.

The following study involved the utilization of dispersion polymerization to synthesize micron/nano-sized polystyrene (PS) spheres, which were then deposited onto a silicon substrate using the floating assembly method to form a long-range monolayer. Subsequently, dry etching techniques were utilized to create subwavelength structures. The adjustment of the stabilizer polyvinylpyrrolidone (PVP), together with changes in the monomer concentration, yielded PS spheres ranging from 500 nm to 5.6 μm in diameter. These PS spheres were suspended in a mixture of alcohol and deionized water before being arranged using the floating assembly method. The resulting tightly packed particle arrangement is attributed to van der Waals forces, Coulomb electrostatic forces between the PS spheres, and surface tension effects. The interplay of these forces was analyzed to comprehend the resulting structure. Dry etching, utilizing the PS spheres as masks, enabled the exploration of the effects of etching parameters on the resultant structures. Unlike traditional dry etching methods controlling RF power and etching gases, in the present study, we focused on adjusting the oxygen flow rate to achieve cylindrical, conical, and parabolic etched structures.

Solvent-free one-step green synthesis of MXenes by “gas-phase selective etching”

Two-dimensional transition metal carbides and nitrides (MXenes) have attracted extensive attention due to their unique electronic properties and various applications for energy harvesting. However, the current synthesis procedures involve using fluoride-based aqueous solutions via reacting with Al-containing MAX phases. Besides, fluorine-free, cost-effective, and straightforward synthetic methods are rarely reported and need to be explored. Here, a solvent-free one-step gas-phase dry etching method, named “Gas-Phase Selective Etching”, was first proposed and used to etch different elements A (Al, Si, Sn, etc.) of MAX phases using the strong oxidation ability of halogens and hydrogen halides gases (Cl2, Br2, I2, HCl, HBr, and HI). The gas-phase etching can achieve a pure product of MXenes coupled with specific gas-induced functional groups. Meanwhile, MXenes powder can be directly obtained without the removal processes of etchants and by-products. Furthermore, the multilayer-MXene with -Cl functional groups (Ti3C2Cl2) has strong oxidation resistance and superior rate performance of capacitance. It provides us with an intelligent, cost-effective synthesis strategy that has a high yield and is safe, allowing for the promising mass production of MXenes.

Fabrication of recessed-gate AlGaN/GaN MOSFETs using TMAH wet etching with Cu ion implantation

In this study, recessed-gate AlGaN/GaN MOSFETs were fabricated using a novel recess etching method––TMAH wet etching with Cu ion implantation. This innovative approach injects Cu ions selectively into the target AlGaN layer, creating defects that are then etched with a TMAH solution, dissolving Ga along with the defect. Compared to the conventional GaN recess etching method of ICP-RIE dry etching, TMAH wet etching offers more precise etching without causing plasma damage on the etched surface. To demonstrate the superiority of TMAH wet etching, devices fabricated with this method were analyzed and compared with devices fabricated using ICP-RIE dry etching. The AFM images of the etched surface demonstrated the superior stability of TMAH wet etching. In addition, electrical characteristics measurements revealed that the devices using TMAH wet etching exhibited a higher on-current (295.05 mA/mm), lower gate lag rate (15.98 %), and a higher breakdown voltage (733 V) than ICP-RIE etched devices.

Atmospheric Gas-Phase Catalyst Etching of SiO2 for Deep Microfabrication Using HF Gas and Patterned Photoresist.

Micro/nanoscale structure fabrication is an important process for designing miniaturized devices. Recently, three-dimensional (3D) integrated circuits using SiO2 via-holes interlayer filling by copper have attracted attention to extend the lifetime of Moore's law. However, the fabrication of vertical and smooth-sidewall via-hole structures on SiO2 has not been achieved using the conventional dry etching method due to the limitation of the selective etching ratio of SiO2 and hard mask materials. In this study, we developed a unique method for the deep anisotropic dry etching of SiO2 using atmospheric gas-phase HF and a patterned photoresist. The hydroxyl groups in the photoresist catalyzed the HF gas-phase dry etching of SiO2 at high-temperature conditions. Therefore, fabrication of vertical with smooth-sidewall deep microstructures was demonstrated in the photoresist-covered area on SiO2 at a processing rate of 1.3 μm/min, which is 2-3 times faster than the conventional dry etching method. Additionally, the chemical reaction pathway in the photoresist-covered area on SiO2 with HF gas was revealed via density functional theory (DFT) calculations. This simple and high-speed microfabrication process will expand the commercial application scope of next-generation microfabricated SiO2-based devices.

Metalorganic Chemical Vapor Deposition of AlN on High Degree Roughness Vertical Surfaces for MEMS Fabrication

AbstractAluminum nitride (AlN) grown on vertical surfaces can be utilized for the fabrication of advanced piezoelectric microelectromechanical systems (MEMS). The in‐plane motion of the parts of a MEMS element is possible when AlN is deposited on the vertical surfaces of the moving structure. For the best device performance, AlN must have high crystal quality, uniform coverage of the vertical sidewalls, and c‐axis crystalline orientation perpendicular to the plane of a vertical surface. The impact of the surface roughness (Rq) of the vertical sidewalls formed in Si using wet and dry etching methods on the crystal quality, crystallographic orientation, and uniformity of the metalorganic chemical vapor deposited (MOCVD) AlN thin films is studied in this paper. In both cases, AlN films demonstrated full sidewall coverage and grew crystalline in the c‐axis direction. AlN films grown on vertical Si surfaces achieved using anisotropic wet etching are highly crystalline and oriented in [0001] direction, while the films grown on vertical surfaces achieved using dry etching displayed a lower level of alignment with the Si sidewalls.

Cooperative stiffening of flexible high aspect ratio nanostructures impart mechanobactericidal activity to soft substrates

Understanding how bacteria interact with surfaces with micrometer and/or sub-micrometer roughness is critical for developing antibiofouling and bactericidal topographies. A primary research focus in this field has been replicating and emulating bioinspired nanostructures on various substrates to investigate their mechanobactericidal potential. Yet, reports on polymer substrates, especially with very high aspect ratios, have been rare, despite their widespread use in our daily lives. Specifically, the role of a decrease in stiffness with an increase in the aspect ratio of nanostructures may be consequential for the mechanobactericidal mechanism, which is biophysical in nature. Therefore, this work reports on generating bioinspired high aspect ratio nanostructures on poly(ethylene terephthalate) (PET) surfaces to study and elucidate their antibacterial and antibiofouling properties. Biomimetic nanotopographies with variable aspect ratios were generated via maskless dry etching of PET in oxygen plasma. It was found that both high and low-aspect ratio structures effectively neutralized Gram-negative bacterial contamination by imparting damage to their membranes but were unable to inactivate Gram-positive cells. Notably, the clustering of the soft, flexible tall nanopillars resulted in cooperative stiffening, as revealed by the nanomechanical behavior of the nanostructures and validated with the help of finite element simulations. Moreover, external capillary forces augmented the killing efficiency by enhancing the strain on the bacterial cell wall. Finally, experimental and computational investigation of the durability of the nanostructured surfaces showed that the structures were robust enough to withstand forces encountered in daily life. Our results demonstrate the potential of the single-step dry etching method for the fabrication of mechanobactericidal topographies and their potential in a wide variety of applications to minimize bacterial colonization of soft substrates like polymers.

Improvement in quantum efficiency of green GaN-based micro-LED by trapezoidal quantum well

The main challenges in the application of GaN-based full-color micro-light-emitting diodes (micro-LEDs) are size-dependent effects and low quantum efficiency, especially for green micro-LEDs. In this study, we propose to use a trapezoidal quantum well (QW) structure in GaN-based green micro-LEDs. The trapezoidal QW structure is able to improve the electron hole wave function overlap, thus increasing the external quantum efficiency (EQE). Green micro-LEDs with active region size of 75 × 64 μm2 are fabricated by metal organic chemical vapor deposition. The peak EQE of the green trapezoidal QW micro-LED reaches 15.8% at a low injection current density of 0.6A/cm2, which is 1.96 times higher than that of conventional rectangular QW. The test results indicate that the trapezoidal QW structure greatly improves the quantum efficiency of green micro-LED, inhibits the blue shift of peak wavelength and improves color purity, which paves the way to single substrate full-color micro-LED display with high-performance. The technology proposed in this paper does not change the production line equipment, but improves the traditional process, so it is expected to significantly improve the external quantum efficiency of the existing green micro-LED under the existing equipment. The production technology of existing InGaN QW micro-LED is directly adopted, and the EQE can be further improved if some new dry etching and passivation methods are applied.

Fabrication of 4H-SiC piezoresistive pressure sensor for high temperature using an integrated femtosecond laser-assisted plasma etching method

The processing, particularly, etching of brittle, hard, and anti-corrosion materials represented by the third-generation wide bandgap semiconductor silicon carbide (SiC), is a significant challenge. Although SiC has excellent electrical, mechanical, and chemical properties, the difficulty of processing limits its application in various sensor devices. To solve this problem, in this study, an integrated processing method of femtosecond laser-assisted SiC dry etching is proposed, which realizes high surface quality and high rate etching of the SiC microstructure. Specifically, the effects of different laser processing parameters on the processing effect were first studied through orthogonal experiments. Experiments indicate that compared with laser power and laser scan times, laser processing speed has a more obvious impact on the processing effect. Subsequently, considering the elastic modulus anisotropy of SiC, a 5 MPa piezoresistive pressure sensor chip was designed. Using the proposed composite processing method, a chip sensitive diaphragm was obtained. The diaphragm thickness and diameter are 76 μm and 1700 μm respectively. The overall sensor chip dimension was 4000 μm × 4000 μm × 350 μm. Static tests demonstrated that the sensor have excellent performance with sensitivity of 6.8 mV/MPa, linearity of 0.69% FS, and repeatability of 0.078% FS. In addition, by designing high-temperature packaging, the sensor achieved a pressure test at 400 °C. This study verifies the feasibility of the composite processing method, realizes the fabrication and measurement of high-temperature pressure sensors, and provides a reference for the micro-and nanostructure processing of various SiC sensors.

Plasma-free dry etching of (001) β-Ga2O3 substrates by HCl gas

In this study, we dry etched SiO2-masked (001) β-Ga2O3 substrates in HCl gas flow at a high temperature without plasma excitation. The etching was done selectively in window areas to form holes or trenches with inner sidewalls of (100) and/or {310} facets, which are the smallest surface-energy-density plane and oxygen-close-packed slip planes, respectively. In particular, (100) faceted sidewalls were flat and relatively close to the substrate surface normal. Therefore, this simple dry etching method is promising for fabricating plasma-damage-free trenches and fins used for β-Ga2O3-based power devices.

Fused silica microchannel fabrication with smooth surface and high etching selectivity

Channel fabrication technology has become increasingly important for microfluidic and nanofluidic devices. In particular, glass channels have high chemical and physical stability, high optical transparency, and ease of surface modification, so that there is increasing interest in glass microfluidic devices for chemical experiments in microfluidics and nanofluidics. For the fabrication of glass channels, especially those with a high aspect ratio (depth/width), lithography using a metal resist and dry etching have mainly been used. However, there are still issues involving the surface roughness of the etched channel and the low etching selectivity. In this study, a microchannel fabrication method with high etching selectivity that produces a smooth etched surface was developed. First, interference during dry etching by remaining Cr particles after the photolithography and Cr etching processes was assumed as the cause of the rough etched surface. Three different dry etching processes were introduced to verify this. In process 1 without removal of the Cr particles, the etched surface was not flat and had a 1 μm scale roughness. In process 2 where a cleaning process was included and high power etching was conducted, a smooth surface with a 1 nm scale roughness and a faster etching rate of 0.3 μm min−1 were obtained. For this high-power etching condition, the etching selectivity (fused silica/Cr) was relatively low at approximately 39–43. In process 3 with a cleaning process and low-power etching, although the etching rate was relatively low at 0.1 μm min−1, a smooth surface with 1 nm scale roughness (10 nm scale roughness deeper than 40 μm in the depth region) and a much higher etching selectivity of approximately 79–84 were obtained. The dry etching method presented in this study represents a significant contribution to microfluidics/nanofluidics for microchannel/nanochannel fabrication.

Mechanobactericidal Nanotopography on Nitrile Surfaces toward Antimicrobial Protective Gear.

We have much to learn from other living organisms when it comes to engineering strategies to combat bacterial infections. This study describes the fabrication of cicada wing-inspired nanotopography on commercially pure (CP) nitrile sheets and nitrile gloves for medical use using the reactive ion etching (RIE) technique. Antibacterial activity against P. aeruginosa was tested using two different surface morphologies. It was observed that the etched nitrile surfaces effectively minimized bacterial colonization by inducing membrane damage. Our findings demonstrate a single-step dry etching method for creating mechanobactericidal topographies on nitrile-based surfaces. These findings have utility in designing next-generation personal protective gear in the clinical setting and for many other important applications in the age of antimicrobial resistance.

Research progress of silicon nanowires array photodetectors

As one of the most important semiconductor materials, silicon (Si) is widely used in optoelectronic devices such as solar cells and photodetectors. Owing to the difference in refractive index between silicon and air, a large amount of incident light is reflected back into the air from the silicon surface. In order to suppress the loss caused by this reflection, a variety of silicon nanostructures with strong trapping effect have been developed. Most of the dry-etching schemes encounter the problems of high cost and complex preparation, while the silicon nanowires array prepared by the wet-etching schemes has the problems of low controllability of some parameters such as the spacing between two adjacent nanowires, and the small effective area of heterojunction. The method of using polystyrene microsphere as the mask can integrate the advantages of dry-etching method and wet-etching method, and it is easy to obtain periodic silicon nanowires (pillars) array. In this paper, first, we summarize the properties and preparation methods for silicon nanowires structure, the strategies to effectively improve the performance of silicon nanowires (pillars) array photodetectors, Then we analyze the existing problems. Further, the latest developments of silicon nanowires (pillars) array photodetector are discussed, and the structure, morphology of photosensitive layer and methods to improve the performance parameters of silicon nanowires (pillars) array photodetector are analyzed. Among them, we focus on the ultraviolet light sensitive silicon based photodetector and its method to show tunable and selective resonance absorption through leaky mode resonance, the silicon nanowires array photodetector modified with metal nanoparticles and the method of improving performance through surface plasmon effect, and plasmon hot electrons. Heterojunction photodetectors composed of various low-dimensional materials and silicon nanowires (pillars) array, and methods to improve the collection efficiency of photogenerated charge carriers through the “core/shell” structure, methods to expand the detection band range of silicon-based photodetectors by integrating down-conversion light-emitting materials and silicon nanowires (pillars) array, flexible silicon nanowires array photodetectors and their various preparation methods, are all introduced. Then, the main problems that a large number of defect states will be generated on the silicon nanostructure surface in the MACE process are briefly introduced, and several possible solutions for defect passivation are also presented. Finally, the future development for silicon nanowires (pillars) array photodetectors is prospected.

Porous Silicon Microneedles for Enhanced Transdermal Drug Delivery

AbstractThe transdermal route is attractive for the minimally invasive administration of small and large molecules. Microneedles (MNs) are particularly promising because of their straightforward, cost‐effective, and safe administration. But precise control over their degradation rate within the skin remains a challenge. Here, porous silicon microneedles (pSi MNs) with controlled degradation rate, tunable porosity, high payload capacity, and mechanical stability are introduced for transdermal delivery of bioactive molecules. pSi MNs are fabricated by combining dry and wet etching methods. After creating MNs via deep reactive ion etching, a porous surface is obtained by electrochemical anodization, producing pSi MNs of about 42 µm length, tip diameter < 1 µm, and conformal porous layers. The biodegradability and the mechanical properties of pSi MNs are adjusted by changing the thickness of the porous layer from 1.5 to 4.0 µm. Both small and macromolecular drug molecules are uniformly loaded into the porous layer of the pSi MN arrays. Ex vivo penetration experiments on porcine tissue demonstrate efficient transdermal delivery using pSi MNs. The novel pSi MNs with tunable porosity, biodegradability, and mechanical strength offer opportunities for the delivery of biotherapeutics through the skin, engendering innovations in pharmaceutical sciences.

Simultaneous Micro- and Nanoscale Silicon Fabrication by Metal-Assisted Chemical Etch

Abstract Simultaneous micro- and nanoscale etching of silicon on a wafer-scale is nowadays performed using plasma etching techniques. These plasma techniques, however, suffer from low throughput due to aspect-ratio dependent etch (ARDE) rate, etch lag from changes in feature size, loading effects from increased etch area, and undesirable surface characteristics such as sidewall taper and scalloping, which are particularly problematic at the nanoscale and can affect the etch uniformity. Additionally, the hardware required for plasma etching can be very expensive. A potential alternative, which addresses the above issues with plasma etching is metal assisted chemical etch (MacEtch). To date, however, an integrated micro- and nanoscale MacEtch process, which has uniform and clean (i.e., without nanowire-like defects in microscale areas) etch front has not been presented in the literature. In this work, we present for the first time a feasible process flow for simultaneous micro-and nanoscale silicon etching without nanowire-like defects, which we call integrated micro- and nanoscale MacEtch (IMN-MacEtch). Successful etching of silicon features ranging from 100 nm to 100 μm was achieved with etch rates of about 1.8 μm/min in a single step to achieve features with an aspect ratio (AR) ∼18:1. We thus conclude that the process represents a feasible alternative to current dry etch methods for patterning feature sizes spanning three orders of magnitude.

Wet etching of platinum (Pt) electrodes for piezoelectric transducers using a thick photoresist mask

Platinum (Pt) is widely used in MEMS applications due to its inert nature and high temperature stability. In general, Pt is patterned using dry etching methods which require expensive machinery. In this study, we propose wet etching of Pt electrodes of piezoelectric transducers in hot Aqua Regia at 60 °C using a thick photoresist as a masking material. We showed that this method eliminates the need for metal hard mask and subsequent metal stripping, which may not be compatible with other structures on the process wafer. A stack of Si/Ti/Pt was used as a test sample to verify the effectiveness and chemical stability of AZ® 9260 and SPR™ 220-7 type photoresists in hot Aqua Regia. The optimized process was then successfully applied on a wafer with a pre-patterned pulsed laser deposited lead zirconate titanate (PLD-PZT) using SPR™ 220-7 photoresist. The suitability of the etching process was verified using optical imaging and SEM-EDS analysis. An etch resolution of 3.5 μm was achieved for 100 nm thick Pt thin films after 15 min immersion in hot Aqua Regia at 60 °C without any plasma cleaning. Using descum process with Ar plasma beforehand decreased the etching time down to 3:45 min and improved the minimum feature size down to 1 μm. • Hard baked thick photoresists can withstand hot Aqua Regia treatment. • Platinum films are etched with micron level resolution. • Piezoelectric structures are protected with easily removable photoresist mask. • No hard metal masking is required.

Bio-Inspired Hierarchical Micro-/Nanostructures for Anti-Icing Solely Fabricated by Metal-Assisted Chemical Etching.

We report a cost-effective and scalable methodology for producing a hierarchical micro-/nanostructured silicon surface solely by metal-assisted chemical etching. It involves two major processing steps of fabricating micropillars and nanowires separately. The process of producing micro-scale structures by masked metal-assisted chemical etching was optimized. Silicon nanowires were created on the micropillar’s surface via maskless metal-assisted chemical etching. The hierarchical micro-/nanostructured surface exhibits superhydrophobic properties with a high contact angle of ~156° and a low sliding angle of <2.5° for deionized water. Furthermore, due to the existence of microscale and nanoscale air trapped at the liquid/solid interface, it exhibits a long ice delay time of 2876 s at −5 °C, more than 5 times longer than that of smooth surfaces. Compared to conventional dry etching methods, the metal-assisted chemical etching approach excludes vacuum environments and high-temperature processes and can be applied for applications requiring hierarchical micro-/nanostructured surfaces or structures.

Robust metallic micropatterns fabricated on quartz glass surfaces by femtosecond laser-induced selective metallization.

Quartz glass has a wide range of application and commercial value due to its high light transmittance and stable chemical and physical properties. However, due to the difference in the characteristics of the material itself, the adhesion between the metal micropattern and the glass material is limited. This is one of the main things that affect the application of glass surface metallization in the industry. In this paper, micropatterns on the surface of quartz glass are fabricated by a femtosecond laser-induced backside dry etching (fs-LIBDE) method to generate the layered composite structure and the simultaneous seed layer in a single-step. This is achieved by using fs-LIBDE technology with metal base materials (Stainless steel, Al, Cu, Zr-based amorphous alloys, and W) with different ablation thresholds, where atomically dispersed high threshold non-precious metals ions are gathered across the microgrooves. On account of the strong anchor effect caused by the layered composite structures and the solid catalytic effect that is down to the seed layer, copper micropatterns with high bonding strength and high quality, can be directly prepared in these areas through a chemical plating process. After 20-min of sonication in water, no peeling is observed under repeated 3M scotch tape tests and the surface was polished with sandpapers. The prepared copper micropatterns are 18 µm wide and have a resistivity of 1.96 µΩ·cm (1.67 µΩ·cm for pure copper). These copper micropatterns with low resistivity has been proven to be used for the glass heating device and the transparent atomizing device, which could be potential options for various microsystems.