DRAM Error Research Articles

X-ray: Discovering DRAM Internal Structure and Error Characteristics by Issuing Memory Commands

X-ray: Discovering DRAM Internal Structure and Error Characteristics by Issuing Memory Commands

Revealing DRAM Operating GuardBands Through Workload-Aware Error Predictive Modeling

Improving the energy efficiency of DRAMs becomes very challenging due to the growing demand for storage capacity and failures induced by the manufacturing process. To protect against failures, vendors adopt conservative margins in the refresh period and supply voltage. Previously, it was shown that these margins are too pessimistic and will become impractical due to high-power costs, especially in future DRAM technologies. In this article, we present a new technique for automatic scaling the DRAM refresh period under reduced supply voltage that minimizes the probability of failures. The main idea behind the proposed approach is that DRAM error behavior is workload-dependent and can be predicted based on particular program inherent features. We use a Machine Learning (ML) method to build a workload-aware DRAM error behavior model based on the program features which we extract from real workloads during our DRAM error characterization campaign. With such a model, we identify the marginal value of the DRAM refresh period under relaxed voltage for each DRAM module of a server that enable us to reduce the DRAM power. We implement a temperature-driven OS governor which automatically sets the module-specific marginal DRAM parameters discovered by the ML model. Our governor reduces the DRAM power by 24 percent on average while minimizing the probability of failures. Unlike previous studies, our technique: i) does not require intrusive changes to hardware; ii) is implemented on a real server; iii) uses a mechanism that prevents any abnormal DRAM error behavior; and iv) can be easily deployed in data centers.

Cosmic rays don't strike twice

Main memory is one of the leading hardware causes for machine crashes in today's datacenters. Designing, evaluating and modeling systems that are resilient against memory errors requires a good understanding of the underlying characteristics of errors in DRAM in the field. While there have recently been a few first studies on DRAM errors in production systems, these have been too limited in either the size of the data set or the granularity of the data to conclusively answer many of the open questions on DRAM errors. Such questions include, for example, the prevalence of soft errors compared to hard errors, or the analysis of typical patterns of hard errors. In this paper, we study data on DRAM errors collected on a diverse range of production systems in total covering nearly 300 terabyte-years of main memory. As a first contribution, we provide a detailed analytical study of DRAM error characteristics, including both hard and soft errors. We find that a large fraction of DRAM errors in the field can be attributed to hard errors and we provide a detailed analytical study of their characteristics. As a second contribution, the paper uses the results from the measurement study to identify a number of promising directions for designing more resilient systems and evaluates the potential of different protection mechanisms in the light of realistic error patterns. One of our findings is that simple page retirement policies might be able to mask a large number of DRAM errors in production systems, while sacrificing only a negligible fraction of the total DRAM in the system.

Cosmic rays don't strike twice

Main memory is one of the leading hardware causes for machine crashes in today's datacenters. Designing, evaluating and modeling systems that are resilient against memory errors requires a good understanding of the underlying characteristics of errors in DRAM in the field. While there have recently been a few first studies on DRAM errors in production systems, these have been too limited in either the size of the data set or the granularity of the data to conclusively answer many of the open questions on DRAM errors. Such questions include, for example, the prevalence of soft errors compared to hard errors, or the analysis of typical patterns of hard errors. In this paper, we study data on DRAM errors collected on a diverse range of production systems in total covering nearly 300 terabyte-years of main memory. As a first contribution, we provide a detailed analytical study of DRAM error characteristics, including both hard and soft errors. We find that a large fraction of DRAM errors in the field can be attributed to hard errors and we provide a detailed analytical study of their characteristics. As a second contribution, the paper uses the results from the measurement study to identify a number of promising directions for designing more resilient systems and evaluates the potential of different protection mechanisms in the light of realistic error patterns. One of our findings is that simple page retirement policies might be able to mask a large number of DRAM errors in production systems, while sacrificing only a negligible fraction of the total DRAM in the system.