Dithiocarbamate Precursors Research Articles

Deposition of Ni and Pd Sulfide Thin Films via Aerosol‐Assisted CVD

AbstractThin films of nickel sulfide (NiS1.03, NiS2,α‐Ni7S6, or mixtures thereof) and palladium sulfide (PdS, Pd16S7, Pd4S, or mixtures thereof) have been prepared by aerosol‐assisted (AA)CVD using dithiocarbamate precursors of the type M(S2CNRR')2 (M = Ni, Pd; RR' = Et2, MeEt, MenBu, or MenHex). The solid‐state structure of Ni(S2CNMenBu)2, was determined by X‐ray single‐crystal diffraction and is characteristic of known nickel dithiocarbamates. Films were grown on glass substrates at temperatures of 400–525 °C and characterized by X‐ray diffraction (XRD), energy dispersive analysis of X‐rays (EDAX), and scanning electron microscopy (SEM).

Simple CVD Routes Towards Infiltration of Mesoporous TiO2.

AbstractFor Abstract see ChemInform Abstract in Full Text.

Dithiocarbamate Precursors for Rare-Earth Sulfides

We have synthesized a series of lanthanide dithiocarbamate precursors for the synthesis of lanthanide sulfide materials and nanoparticles. Three dithiocarbamate complexes with europium, [Eu(S2CNRR‘)3L], where L = 1,10-phenanthroline, and R = methyl, R‘ = ethyl (1), R = R‘ = nPropyl (2), and R = R‘ = iButyl (3), as well as the lanthanide complexes, [Ln(S2CNR2)3 L], where R = ethyl, L = 1, 10-phenanthroline, and Ln = Nd (4), Sm (5), Gd (6), Ho (7), and Er (8), were synthesized and characterized by single-crystal X-ray diffraction, infrared, NMR, and UV−visible spectroscopy. We have used thermal analysis coupled with GC−MS and X-ray powder diffraction to determine the mechanism of decomposition. With R = Et, smaller Ln ions give lower precursor decomposition temperatures, consistent with the higher lattice energies of the product Ln sulfides. Because they are monomeric, and water- and air-stable, these compounds should be ideal precursors for forming LnS as nanoparticles and bulk materials.

Simple CVD Routes Towards Infiltration of Mesoporous TiO2

There is considerable interest in developing simple, single-step chemical procedures for controlled infiltration of mesoporous materials in order to create novel structures with practical applications. In this paper, we demonstrate the use of low-pressure metal-organic (MO)CVD and aerosol assisted (AA)CVD methods for infiltration and growth of compound semiconductors (CdS and CuInS 2 ) within mesoporous TiO 2 thin films using single-source dithiocarbamate precursors. The relative rates of surface reaction and diffusion of precursors can be controlled through simple modification of our existing single-step CVD processes. Films have been characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM). energy dispersive X-ray (EDX), and electronic spectroscopy. Promising transient absorption data have been obtained for mesostructured CuInS 2 / TIO 2 films, which suggest the AACVD-grown ternary has desirable properties for employment as a solar sensitizer in solid-state inorganic photovoltaic cells. The simplicity of the approach may also find practical applications in the production of inverse opals for photonic crystals and thin films.

Electroluminescent ZnS:Mn films prepared by an MOCVD method based on dithiocarbamate precursors

It is shown that electroluminescent ZnS:Mn films with luminance more than and luminous efficiency can be obtained by low-temperature deposition from Mn and Zn dithiocarbamates; subsequent thermal treatment of these films is not necessary. Starting materials were deposited on the substrate heated to a temperature of 220-C by spraying organic solution in air at atmospheric pressure. As a result homogeneous polycrystalline layers of ZnS:Mn with a growth rate of 60- have been obtained. The electroluminescent characteristics of the thin films and structures based on various preparation and excitation conditions are presented. The possibility of application of these films as a planar light source is discussed.