Distributed Bragg Reflector Laser Research Articles

In laser radiometry, it is essential to evaluate the linearity of the detector and understand how interference effects influence power measurements, as laser light typically has high power and coherence. In this paper, we investigate the linearity and interference effects of widely used silicon photodiodes under the condition that they are coupled to an integrating sphere. For the linearity study, we employed a flux-addition method at 532nm and found that one photodiode exhibited sufficient linearity, while the other showed supralinearity. This difference was attributed to whether the photodiode was irradiated with light outside its photoactive region. To further explore this, we examined the linearity by scanning the position of the laser irradiation on the photodiodes. In the interference study, we used a narrowband distributed Bragg reflector laser and measured the spectral responsivity by varying the laser wavelength. Due to the cover window, the spectral responsivity of photodiodes can rapidly vary as the wavelength changes under direct laser irradiation, with variations reaching up to tens of percent. However, when the spatial coherence of laser light is sufficiently suppressed by the integrating sphere, these rapid variations decrease to around 0.01% of the smoothly varying fitted values, which is negligible in typical laser power measurements.

Abstract We report a record-high pulse power of 420 W or a pulse energy of 4.2 μJ at a pulse current of 210 A, emitted by a single distributed Bragg reflector broad-area laser with 5 active regions separated by 4 tunnel junctions. The laser is operated with nanosecond current pulses at a repetition frequency of 10 kHz so that optical pulses with a width of 10 ns are emitted. The emission spectrum exhibits a spectral peak at approximately 905 nm at 25 °C with a spectral width of less than 0.2 nm and a temperature-related shift of 63 pm K−1. We also investigate the dependence of the output power on cavity length and number of active regions. A 4 mm long laser with 3 active regions achieves a pulse power of 272 W at 150 A. At the same current, 2 mm long lasers with 3 and 5 active regions achieve output powers of 167 W and 283 W, respectively. Despite its shorter cavity, the 2 mm long 5 active region laser delivers 10 W more output power at 150 A than the 4 mm long laser with 3 active regions. All lasers under study have a p-contact stripe width of 200 μm.

Chip-scale atomic clocks are critical for applications requiring compact, energy-efficient, and highly stable timing, such as GPS receivers and communication systems. Coherent population trapping (CPT)-based atomic clocks, which commonly use vertical-cavity surface-emitting lasers (VCSELs), have enabled significant miniaturization. However, their precision is limited by the broad linewidth of VCSELs. Alternative laser technologies, such as distributed Bragg reflector lasers, distributed feedback lasers, and external cavity diode lasers (ECDLs), offer potential improvements but face challenges in achieving compact size and adequate modulation bandwidth. This study presents a 795 nm chip-ECDL with a direct modulation bandwidth up to 4 GHz, specifically designed for CPT chip-scale atomic clocks. Based on the chip-ECDL, a CPT atomic clock with a compact volume of 19.4 ml and power consumption of 1.5 W has been developed. Under identical operating conditions, the CPT signal produced by the chip-ECDL exhibits a 34% reduction in linewidth and a 1.14-fold increase in contrast compared to a VCSEL-based clock. Demonstrating short-term stability better than 5×10−11τ−1/2(1 s<τ<2000 s) and reaching a best stability of 6.6×10−13 at 2000 s, this work represents the application of an ECDL in a CPT chip-scale clock, advancing the development of next-generation, high-performance chip-scale atomic clocks.

We show a distributed Bragg reflector laser operating at 1875 nm, using a hybrid silicon nitride photonic chip coated with thulium-doped tellurite glass. The passive laser cavity consists of nominally 50 nm wide sidewall Bragg gratings directly patterned in a 1.2 µm wide, 0.2 µm thick, and 22 mm long silicon nitride waveguide on a thermally-oxidized silicon substrate, fabricated using a standard foundry process. A 0.39 µm thick thulium-doped tellurium dioxide optical gain layer was deposited onto the chip by reactive radio frequency magnetron co-sputtering. The resulting hybrid laser includes 6 and 4 mm long gratings separated by an 11 mm gap to form an asymmetrical cavity and promote directional lasing off the shorter reflector. We obtain a maximum on-chip output power of 4.5 mW and a lasing threshold of 20 mW when pumping at 1610 nm. A total slope efficiency of 5% was achieved, as well as a thermal tunability of the laser wavelength of 32.3 pm/°C. These results are a step toward simple, compact, and high-power on-chip thulium-based tellurite lasers for silicon-based photonic integrated circuits.

Heater-Tuned Single-Grating Distributed Bragg Reflector Lasers with a Thermal Confinement Waveguide Structure

We reported on a single-longitudinal-mode operated distributed Bragg reflector laser diode emitting at 1950 nm with an on-chip integrated power amplifier. Second-order Chromium–Bragg gratings are carefully designed and fabricated at the end of the ridge waveguide. Achieving a stable single-mode operation with a large injecting current range of 800 mA from 15 °C to 40 °C. The maximum side-mode suppression ratio (SMSR) is up to 42 dB. To increase the output power, an on-chip integrated master oscillator power amplifier (MOPA) is also introduced. MOPA-DBR lasers with different matching configurations between the gain peak and Bragg wavelength are fabricated, resulting in various amplification consequences. The best device is realized with 40 nm red-shifted between Bragg wavelength and photoluminescence (PL) peak. A power amplification of 5.6 times is achieved with the maximum output power of 45 mW. Thus, we put up the feasibility and key design parameters of on-chip integrated power amplification DBR lasers towards mid-infrared.

Traditional distributed feedback (DFB) or distributed Bragg reflector (DBR) lasers typically have commonly employed buried gratings as frequency-selective optical feedback mechanisms. However, the fabrication of such gratings often requires regrowth processes, which introduce significant technical challenges, particularly for material systems such as GaAs and GaSb. While metal gratings have been implemented in GaSb-based lasers, they incur additional absorption losses, thereby constraining the device's efficiency and achievable output power. Herein, we introduce a laterally coupled dielectric Bragg grating structure, which enables highly controllable, deterministic, and stable coupling between the grating and the optical mode. Our device demonstrates a continuous-wave output power of 47.02 mW at room temperature, exhibiting stable single-mode operation from 300 to 1000 mA and a maximum side mode suppression ratio of 46.7 dB. These results underscore the innovative lateral coupled dielectric grating as a feasible and technologically superior approach for fabricating DFB and DBR lasers, which hold universal applicability across different material platforms and wavelength bands.

A narrow linewidth hybrid integrated distributed Bragg reflector (DBR) laser platform operating at 2 μm wavelength region is demonstrated. The laser architecture comprises AlGaInAsSb/GaSb type-I quantum well reflective semiconductor optical amplifiers butt-coupled to a Si3N4 photonic integrated circuit (PIC), incorporating a narrow-band DBR. The DBR is realized with a long spiral-shaped waveguide structure with periodic circular posts placed adjacent to the waveguide. At room temperature operating conditions, the laser exhibits a maximum continuous wave output power of more than 17 mW for emission near 2 μm. Linewidth properties are analyzed with a heterodyne measurement technique, involving the mixing of the laser signal with a frequency comb phase-locked to an ultra-stable laser. The hybrid laser exhibits a narrow linewidth of ∼8 kHz in 1 ms timescale and ∼50 kHz in 10 ms timescale.

InP-based edge-emitting O-band lasers are integrated onto silicon photonics circuit employing micro-transfer printing technology. Blocks of unpatterned InP gain material of typical size 1000 × 60 μ m2 are first transferred onto 400 nm thick silicon rib waveguides with the fabrication steps performed on the target wafer to realize the final lasers. As a result, the InP ridge waveguides are aligned with lithographic accuracy to the underlying Si waveguides resulting in an approach free from any misalignment stemming from the transfer printing process. The fabricated Distributed Bragg Reflector laser shows lasing around 100 mA current injection with minimum 1 mW of output power coupled to a single mode fiber. This integration method paves a reliable route toward scaling-up the integration of active devices such as lasers, modulators, and detectors on 300-mm diameter silicon wafers, which requires high-uniformity across the wafer.

Recent advancements in ultra-low-loss silicon nitride (Si3N4)-based photonic integrated circuits have surpassed fiber lasers in coherence and frequency agility. However, high manufacturing costs of DFB and precise control requirements, as required for self-injection locking, hinder widespread adoption. Reflective semiconductor optical amplifiers (RSOAs) provide a cost-effective alternative solution but have not yet achieved similar performance in coherence or frequency agility, as required for frequency modulated continuous wave (FMCW) LiDAR, laser locking in frequency metrology, or wavelength modulation spectroscopy for gas sensing. Here, we overcome this challenge and demonstrate an RSOA-based and frequency-agile fully hybrid integrated extended distributed Bragg reflector (E-DBR) laser with high-speed tuning, good linearity, high optical output power, and turn-key operability. It outperforms Vernier and self-injection locked lasers, which require up to five precise operating parameters and have limitations in continuous tuning and actuation bandwidth. We maintain a small footprint by utilizing an ultra-low-loss 200 nm thin Si3N4 platform with monolithically integrated piezoelectric actuators. We co-integrate the DBR with a compact ultra-low-loss spiral resonator to further reduce the intrinsic optical linewidth of the laser to the Hertz-level—on par with the noise of a fiber laser—via self-injection locking. The photonic integrated E-DBR lasers operate at 1550 nm and feature up to 25 mW fiber-coupled output power in the free-running and up to 10.5 mW output power in the self-injection locked state. The intrinsic linewidth is 2.5 kHz in the free-running state and as low as 3.8 Hz in the self-injection locked state. In addition, we demonstrate the suitability for FMCW LiDAR by showing laser frequency tuning over 1.0 GHz at up to 100 kHz triangular chirp rate with a nonlinearity of less than 0.6% without linearization by modulating a Bragg grating using monolithically integrated aluminum nitride (AlN) piezoactuators.

A photonic-assisted microwave frequency measurement (MFM) method based on optical heterodyne detection is proposed and experimentally demonstrated. In the proposed MFM system, a linearly chirped optical waveform (LCOW) from a three-electrode distributed Bragg reflector laser diode (DBR-LD) and a multi-wavelength signal from a Mach-Zehnder modulator (MZM), where the signal under test (SUT) is modulated on an optical carrier from a distributed feedback laser diode (DFB-LD), are heterodyne detected by the photodetector (PD). A bandpass filter then filters the detected signal, and the envelope is detected by an oscilloscope. Then, frequency-to-time mapping is realized, and the signal frequency is measured. Thanks to the fast tuning rate and large tuning range of the DBR-LD, the proposed MFM system has a high measurement speed and a broad instantaneous measurement bandwidth. In the experimental demonstration, a measurement error below 39.1 MHz is achieved at an instantaneous bandwidth of 20 GHz and a measurement speed of 1.12 GHz/µs. The MFM of a frequency-hopping signal is also experimentally demonstrated. The successful demonstration of the MFM system with a simple structure provides a new optical solution for realizing broadband and fast microwave frequency measurements.

We developed short-active-length distributed Bragg reflector (DBR) lasers to reduce the power consumption of chip-to-chip optical interconnects. These lasers have buried bulk InGaAsP waveguides to increase the coupling efficiency between the active region and DBR to 99.79% from the 98.14% of our previous DBR lasers that had InP channel waveguides. We achieved continuous wave operation of 5- to 80-µm active-length DBR lasers and the 5-µm-long laser consumed 24 fJ/bit with a 10-Gbps NRZ signal. The threshold current of the 5-µm laser was 51 µA, which compares favorably to our previous 10-µm DBR lasers with a threshold current of 170 µA.

High-speed spectrum demodulation of fiber-optic Fabry–Perot sensor based on scanning laser

Common-signal-induced synchronization of semiconductor lasers with optical feedback inspired a promising physical-layer key distribution with information-theoretic security and potential in high rate. A significant challenge is the requirement to shorten the synchronization recovery time for increasing the key rate without sacrificing the operation parameter space for security. Here, open-loop synchronization of wavelength-tunable multi-section distributed Bragg reflector lasers is proposed as a solution for physical-layer key distribution. Experiments show that the synchronization is sensitive to two operation parameters, i.e., currents of grating section and phase section. Furthermore, fast wavelength-shift keying synchronization can be achieved by direct modulation on one of the two currents. The synchronization recovery time is shortened by one order of magnitude compared to close-loop synchronization. An experimental implementation is demonstrated with a final key rate of 5.98 Mbit/s over 160 km optical fiber distance. It is thus believed that fast-tunable multi-section semiconductor lasers open a new avenue for a high-rate physical-layer key distribution using laser synchronization.

Distributed Bragg Reflector (DBR) lasers have emerged as versatile and indispensable tools across various domains. Their advantages, including high signal-to-noise ratios, narrow linewidths, and support for distributed sensing, enable them to excel in diverse applications. DBR lasers have revolutionized optical fiber communication, medical diagnostics, and chaos-based key distribution. They provide precise control over wavelengths, making them valuable in fields such as dermatology, ophthalmology, and photodynamic therapy. Additionally, they play a critical role in flow cytometry, spectroscopy, and dental procedures. In the realm of sensing, DBR lasers have proven their efficacy in detecting parameters like temperature, pressure, current, magnetic fields, and ultrasound. Innovative techniques, such as FPGA-based demodulation and slotted DBR optical fiber lasers, have further enhanced their capabilities. As technology advances, the potential of DBR lasers in sensing and detection applications continues to grow. Their ability to deliver real-time, accurate data across various parameters positions them as essential tools for addressing complex scientific, medical, and industrial challenges. The future promises exciting developments in DBR laser technology, further expanding their role in solving multifaceted problems.

We demonstrate a hybrid integrated laser by transfer printing an InAs/GaAs quantum dot (QD) amplifier on a Si waveguide with distributed Bragg reflectors (DBRs). The QD waveguide amplifier of 1.6 mm long was patterned in the form of an airbridge with the help of a spin-on-glass sacrificial layer and precisely integrated on the silicon-on-insulator (SOI) waveguide by pick-and-place assembly using an elastomer stamp. Laser oscillation was observed around the wavelength of 1250 nm with a threshold current of 47 mA at room temperature and stable operation up to 80°C. Transfer printing of the long QD amplifiers will enable the development of various hybrid integrated laser devices that leverage superior properties of QDs as laser gain medium.

A differential multi-frequency laser Doppler velocimetry is demonstrated, utilizing the synchronized multimode of a mode-locked distributed Bragg reflector laser. This scheme enables the simultaneous detection of multiple Doppler frequency shifts. Multiple differential Doppler shifts of 0.6 Hz, 1.3 Hz, and 1.9 Hz are obtained, with an average speed of 3.677 mm/s and a standard deviation of 0.122 mm/s, demonstrating a cross-referenced velocity measurement capability. The measurement results are also compared with the dual-frequency laser Doppler velocimetry scheme using electro-optical modulation.

Photonic generation of a tunable multi-band linearly frequency-modulated waveform

A 1940 nm single-frequency distributed Bragg reflector (DBR) fiber laser was demonstrated based on a Tm : YAG/Ho : YAG-co-derived silica fiber (THCDSF). The THCDSF, which had a core dopant concentration of 8.02 wt.% Tm2O3 and 1.18 wt.% Ho2O3, was prepared via the melt-in-tube (MIT) method using a Tm : YAG and a Ho : YAG as the precursor core and a silica tube as the cladding. Employing 1.8 cm of the THCDSF, we achieved a maximum single-frequency output power of 315 mW at 1940 nm when pumped by a 1610 nm fiber laser. The slope efficiency of the laser was 29.68% for the absorbed pump power. The laser linewidth was less than 23.65 kHz, and the relative intensity noise (RIN) stabilized at -145 dB/Hz after exceeding 4.8 MHz. To the best of our knowledge, this is the first demonstration of a single-frequency DBR laser with a Tm3+/Ho3+ fiber as the gain medium.

We proposed a thermally-tuned distributed Bragg reflector (DBR) laser diode that has a high tuning efficiency over a wide wavelength tuning range. The laser diode is composed of a gain, a phase control (PC), and a DBR region, and its wavelength is tuned coarsely and finely by the micro-heaters on the DBR and PC regions, respectively. To improve the tuning efficiency, we developed a technique for fabricating a thermal isolation structure through a reverse mesa etching process, replacing the complex process that uses an InGaAs sacrificial layer. The DBR laser diodes (DBR-LD) fabricated using this method effectively confines heat generated by the heater, resulting in an approximate tuning range of 40 nm. This technology, which has achieved nearly four times larger wavelength tuning range than the thermally-tuned DBR-LDs without a thermal isolation structure, is considered suitable for the cost-effective development of wide-wavelength-tuning DBR-LD light sources.