Atomic layer deposition (ALD) is widely used in microelectronics and semiconductor industry to deposit thin films as part of device fabrication in nano- or subnano-dimensions. The key advantages of ALD are the conformality and precise thickness control at the atomic scale, which are difficult for physical or traditional chemical vapor deposition methods. The atomic scale understanding of ALD is vital and essential to design and optimize the deposition process, where density functional theory (DFT) calculations play an important role in providing detailed reaction mechanism, theoretical screening of suitable precursors and estimated growth-per-cycle (GPC).In this study, we show our recent works on DFT calculations of the growth mechanism study of Cobalt (Co) thin film by plasma-enhanced ALD1,2. We first addressed the surface reaction mechanism at the metal precursor pulse and plasma half-cycle on NHx-terminated Co surfaces, which corresponds to the steady growth for the PE-ALD. The adsorption and reactions of metal precursors (CoCp2) on NHx terminated metal surfaces were investigated with the inclusion of van der Waals corrections. The plausible reaction pathways include: precursor adsorption, hydrogen transfer, CpH formation and CpH desorption. The direct Cp dissociation mechanism is not considered on these NHx-terminated metal surfaces due to experimentally observed minimal C impurities at the deposited metal thin films, which indicates that most of the Cp ligand is removed completely. The barrier for proton transfer was calculated using climbing image nudged elastic band (CI-NEB) method.The reactions at the initial stages on typical H:Si(100) surface are investigated to gain atomic insight on the effect of different substrates on the elimination of Cp ligands. Our work is important to reveal the mechanism and feasibility of atomic layer deposition of metals using N-plasma.In addition, we present our recent works3, 4 on the thermal ALD of Co using reducing agent Zn(DMP)2 and thermal ALD of Fe4Zn9 thin film with diethyl zinc (DEZ). Our DFT results show that by selecting suitable reducing agent, we can control the deposited thin films to be Zn-free high quality Co thin film or desired intermetallic thin film with high Zn content.These DFT results are important to understand the reaction mechanism for ALD and provides new knowledge in depositing the thin films by adjusting the reducing agents.
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