Carrier Diffusion Length Research Articles

Enhanced photodetection through a perovskite BaTiO3 dielectric in a Si-MoS2 heterojunction.

The present investigation deals with the effect of a BaTiO3 (BTO) dielectric layer on the performance of MoS2/p-Si heterojunction photodetectors. The MoS2/p-Si junction demonstrates a responsivity of ∼80 A W-1 and detectivity of ∼1012 Jones. The inclusion of a dielectric BTO layer significantly enhances the performance of MoS2/p-Si photodetectors, leading to a remarkable improvement with a very high responsivity of ∼603 A W-1 and detectivity of ∼1013 Jones. The I-V characteristics of the MoS2/p-Si and MoS2/BTO/p-Si junctions under illumination can be understood by considering their respective energy band diagrams. This addition alters the energy band alignment, leading to higher conduction band offset and valence band offset values. The large photocurrent in forward bias in the MoS2/BTO/p-Si junction may be attributed to the presence of photogenerated electrons in the depletion region of BTO. BTO exhibits characteristics such as a long carrier diffusion length and low recombination rates, contributing to a reduction in carrier recombination within the photodetector for which the photocurrent of the MoS2/BTO/p-Si heterojunction can be improved significantly. The enhanced performance of the MoS2/BTO/p-Si junction, characterized by higher responsivity and detectivity, underscores the potential of this heterojunction for advanced photodetection applications, suggesting promising avenues for further research and development in the field of photodetectors. A comparative study with the available literature reveals that the excellent responsivity of ∼603 A W-1 and detectivity of ∼1013 Jones of the presently studied MoS2/BTO/p-Si heterojunction appear highly promising for various futuristic device applications.

Trap States and Carrier Diffusion in Czochralski (100) Single Crystal β-Ga2O3

Deep trap spectra and carrier diffusion lengths were measured for unintentionally doped β-Ga2O3 bulk crystals with (100) orientation. The 20-mm diameter, 15-mm length boule was pulled by the Czochralski method from gallium oxide in (010) direction. It is found that the net density of shallow donors in (100) plates cleaved from the crystal was 2.6 × 1017 cm−3, with ionization energies of 0.05 eV measured from admittance spectra. Three deep electron traps with respective ionization energies of 0.6 eV (concentration 1.1 × 1014 cm−3), 0.8 eV (concentration 3.9 × 1016 cm−3) and 1.1 eV (concentration 8.9 × 1015 cm−3) were detected by Deep Level Transient Spectroscopy. The dominant 0.8 eV trap is associated with the E2 centers due to Fe acceptors, the two other traps are the well documented E1 and E3 centers. The major deep acceptors in the lower half of the bandgap have optical ionization threshold of 2.3 eV and concentration of 4 × 1015 cm−3 and are believed to be due to the split Ga vacancies acceptors. The diffusion length of non-equilibrium charge carriers was 90 nm. The electrical properties of these (100) oriented crystals grown by Czochralski are quite similar to those synthesized by the undoped Edge-defined Film-Fed Growth technique.

Recent advances in organolead halide crystalline materials for photocatalytic H2 evolution and CO2 reduction applications.

The photocatalytic technique has been widely recognized as a feasible technological route for sustainable energy conversion of solar energy into chemical energy. Photocatalysts play a vital role in the whole catalytic process. In particular, organolead halide perovskites have become emerging photocatalysts, owing to their precisely tunable light absorption range, high carrier diffusion mobility, and longer carrier lifetime and diffusion length. Nevertheless, their intrinsic structural instability and high carrier recombination rate are the major bottlenecks for further development in photocatalytic applications. This Frontier is focused on the recent research about the instability mechanism of organolead halide perovskites. Then, we summarize the recently developed strategies to improve the structural stability and photocatalytic activity of organolead halide materials, with an emphasis on the construction of organolead halide crystalline catalysts with high intrinsic structural stability. Finally, an outlook and challenges of organometal halide photocatalysts are presented, demonstrating the irreplaceable role of this class of emergent materials in the field of photo-energy conversion.

High-performance CsSnBr<sub>3</sub>/Si PN heterojunction photodetectors prepared by pulsed laser deposition epitaxy

Halide perovskite semiconductors have outstanding physical properties such as high light absorption coefficient, large carrier diffusion length, and high photoluminescence quantum efficiency, and demonstrate significant potential applications in optoelectronic devices such as photodetectors and solar cells. However, the toxicity and environmental instability associated with lead-based perovskites significantly limit their applications. An attractive solution is substituting tin for lead in perovskites and growing high-quality tin-based perovskite films. In this study, we adopt the pulsed laser deposition method to achieve the epitaxial growth of CsSnBr<sub>3</sub> films on silicon substrates. The morphologies, optical and electrical properties of the CsSnBr<sub>3</sub> films, as well as the CsSnBr<sub>3</sub>/Si heterojunction detectors, are comprehensively investigated with various characterization techniques, including XRD 2<i>θ</i>-<i>ω</i> and <i>φ</i> scans, atomic force microscope, scanning electron microscope, photoluminescence and time-resolved photoluminescence spectroscopy, and Hall electrical measurements. The results indicate that such a CsSnBr<sub>3</sub> film grows epitaxially onto the silicon substrate via a face-to-face mode. Interestingly, an unusual temperature-dependent bandgap increase is found to be due to the high electron effective mass of CsSnBr<sub>3</sub>. The CsSnBr<sub>3</sub> film shows the P-type semiconductor behavior with a high mobility of 122 cm²/(V·s), enabling the formation of an ideal Type-II heterojunction with the silicon substrate. The CsSnBr<sub>3</sub>/Si semiconductor heterojunction detector exhibits distinctive heterojunction PN diode characteristics in the dark and a pronounced photoresponse under illumination. At zero bias, the detector displays a switch ratio exceeding 10<sup>4</sup>, responsivity of 0.125 mA/W, external quantum efficiency of 0.0238%, detectivity (<inline-formula><tex-math id="Z-20240301150440">\begin{document}$D^* $\end{document}</tex-math><alternatives><graphic xmlns:xlink="http://www.w3.org/1999/xlink" xlink:href="5-20231645_Z-20240301150440.jpg"/><graphic xmlns:xlink="http://www.w3.org/1999/xlink" xlink:href="5-20231645_Z-20240301150440.png"/></alternatives></inline-formula>) of 2.1×10<sup>9</sup> Jones, response time 3.23 ms, and recovery time of 4.87 ms. Under a small bias of –1 V, the switch ratio decreases to 50, but responsivity and external quantum efficiency increase by 568 times. The detectors can maintain self-powered operation state with a high switch ratio of 10<sup>4</sup>, millisecond-level response time and millisecond-level recovery time. In conclusion, this work presents a self-powering, high-performance photodetector based on CsSnBr<sub>3</sub> epitaxial films integrated with silicon substrates.

The Developing Field of Hybrid Perovskite Semiconductor Nanomaterials: A Survey of Recent Advances in their Production and Usage for Optoelectronic Applications.

Due to its distinctive characteristics, including high absorption coefficients, lengthy carrier diffusion lengths, and variable bandgap energies, hybrid perovskite semiconductor nanomaterials have become a potential class of materials for a variety of optoelectronic applications. In this article, we present a thorough analysis of current advancements in the production and application of hybrid perovskite semiconductor nanomaterials. We go over the different ways to create these materials, such as hybrid techniques, vapor-phase deposition, and solution-phase synthesis. We also emphasize the difficulties in synthesising them as well as the solutions being sought. The use of hybrid perovskite semiconductor nanomaterials for optoelectronic devices including photovoltaic, light-emitting diodes, and photo detectors has made some significant strides, which we also review. Lastly, we go over the open questions and potential research routes in this quickly developing area. This review highlights the revolutionary potential of hybrid perovskite semiconductor nanomaterials and offers a thorough overview of the state-of-the-art in this field.

Defects of perovskite semiconductor CsPbBr3 investigated via photoluminescence and thermally stimulated current spectroscopies

Halide perovskites are essential materials for hard radiation detectors at ambient temperature. To improve detector performance, charge transport must be investigated and optimized. Using photoluminescence (PL) and thermally stimulated current (TSC) spectroscopies, we investigate photogenerated charge carriers in Bridgman-grown CsPbBr3 single crystals to understand the nature of charge transport. PL spectroscopy of these halide perovskites revealed the presence of strong emission bands at the band edge, which were attributed to free or bound excitons. It is shown that a wide broadening of the excitonic linewidth in these halide perovskites arises from strong exciton–phonon coupling, which is substantially dominated by longitudinal optical phonons via Fröhlich interaction. An additional contribution due to the presence of ionized impurities was also observed. Crystals with a detectable sensitivity to high-energy gamma radiation are characterized by a higher intensity and a narrower linewidth of the principal PL peak at 2.326 eV. Defect states beyond 2.214 eV have a negative impact on detector sensitivity to high-energy gamma radiation. TSC spectroscopy reveals an array of trap levels spanning 0.15–0.70 eV, attributed to intrinsic point defects and multiple extrinsic defects involving dopants or impurities. Defects identified included Cs and Br vacancies, as well as Pb interstitials with concentrations in the 1011–1016 cm−3 range. Understanding how the synthesis process impacts the types and concentrations of the defects present is currently under investigation. Elimination or suppression of the defect/trap states should result in halide perovskite materials with longer carrier diffusion lengths and improved detector characteristics.

Temperature‐Dependent Interplay between Structural and Charge Carrier Dynamics in CsMAFA‐Based Perovskites

AbstractState‐of‐the‐art triple cation, mixed halide perovskites are extensively studied in perovskite solar cells, showing very promising performance and stability. However, an in‐depth fundamental understanding of how the phase behavior in Cs0.05FA0.85MA0.10Pb(I0.97Br0.03)3 (CsMAFA) affects the optoelectronic properties is still lacking. The refined unit cell parameters a and c in combination with the thermal expansion coefficients derived from X‐ray diffraction patterns reveal that CsMAFA undergoes an α–β phase transition at ≈280 K and another transition to the γ‐phase at ≈180 K. From the analyses of the electrodeless microwave photoconductivity measurements it is shown that shallow traps only in the γ‐phase negatively affect the charge carrier dynamics. Most importantly, CsMAFA exhibits the lowest amount of microstrain in the β‐phase at around 240 K, corresponding to the lowest amount of trap density, which translates into the longest charge carrier diffusion length for electrons and holes. Below 200 K a considerable increase in deep trap states is found most likely related to the temperature‐induced compressive microstrain leading to a huge imbalance in charge carrier diffusion lengths between electrons and holes. This work provides valuable insight into how temperature‐dependent changes in structure affect the charge carrier dynamics in FA‐rich perovskites.

Rationally designed core-shell of 2D-g-C3N4/Cu2O nanowires heterojunction photocathode for efficient photoelectrochemical water splitting

Copper oxide (Cu2O) is a promising candidate as a high-performance photocathode due to its remarkable cost-to-efficiency ratio for photoelectrochemical (PEC) water splitting. However, fully exploiting the potential of planar Cu2O photocathodes for an efficient PEC performance remains a fundamental challenge owing to the poor light absorption and limited carrier diffusion length. To address these challenges, a graphitic carbon nitride (g-C3N4)/2D-Cu2O nanowires (NWs) with core-shell heterojunction photocathode has developed. The PEC water-splitting analysis reveals that the g-C3N4/Cu2O core-shell NWs photocathode boosted the photocurrent density from 0.83 mA/cm2 to 2.33 mA/cm2 at 0 VRHE (3-fold enhancement) compared with bare Cu2O. The formation of a g-C3N4 shell over the Cu2O core resulted in improved light harvesting as well as facile charge transport from the electrode to the electrolyte. Computational studies also revealed an impressive Gibbs free energy of 0.20 eV for the g-C3N4/Cu2O interface, highlighting its potential as an efficient PEC water-splitting device. These findings demonstrate that incorporating nanostructuring and overlayer strategies can remarkably enhance the PEC performance of Cu2O photocathodes, paving the way for more efficient and cost-effective water-splitting technologies.

Charge Management Enables Efficient Spontaneous Chromatic Adaptation Bipolar Photodetector.

Solution-processed photodetectors have emerged as promising candidates for next-generation of visible-near infrared (vis-NIR) photodetectors. This is attributed to their ease of processing, compatibility with flexible substrates, and the ability to tune their detection properties by integrating complementary photoresponsive semiconductors. However, the limited performance continues to hinder their further development, primarily influenced by the difference of charge transport properties between perovskite and organic semiconductors. In this work, a perovskite-organic bipolar photodetectors (PDs) is introduced with multispectral responsivity, achieved by effectively managing charges in perovskite and a ternary organic heterojunction. The ternary heterojunction, incorporating a designed NIR guest acceptor, exhibits a faster charge transfer rate and longer carrier diffusion length than the binary heterojunction. By achieving a more balanced carrier dynamic between the perovskite and organic components, the PD achieves a low dark current of 3.74nAcm-2 at -0.2V, a fast response speed of <10 µs, and a detectivity of exceeding 1012 Jones. Furthermore, a bioinspired retinotopic system for spontaneous chromatic adaptation is achieved without any optical filter. This charge management strategy opens up possibilities for surpassing the limitations of photodetection and enables the realization of high-purity, compact image sensors with exceptional spatial resolution and accurate color reproduction.

Minimizing Interfacial Recombination in 1.8eVTriple-Halide Perovskites for 27.5% Efficient All-Perovskite Tandems.

All-perovskite tandem solar cells show great potential to enable the highest performance at reasonable costs for a viable market entry in the near future. In particular, wide-bandgap (WBG) perovskites with higher open-circuit voltage (VOC ) are essential to further improve the tandem solar cells' performance. Here, a new 1.8eV bandgap triple-halide perovskite composition in conjunction with a piperazinium iodide (PI) surface treatment is developed. With structural analysis, it is found that the PI modifies the surface through a reduction of excess lead iodide in the perovskite and additionally penetrates the bulk. Constant light-induced magneto-transport measurements are applied to separately resolve charge carrier properties of electrons and holes. These measurements reveal a reduced deep trap state density, and improved steady-state carrier lifetime (factor 2.6) and diffusion lengths (factor 1.6). As a result, WBG PSCs achieve 1.36V VOC , reaching 90% of the radiative limit. Combined with a 1.26eV narrow bandgap (NBG) perovskite with a rubidium iodide additive, this enables a tandem cell with a certified scan efficiency of 27.5%.

Tailored Succinic Acid-Derived Molecular Structures toward 25.41%-Efficiency and Stable Perovskite Solar Cells.

Minimizing interfacial charged traps in perovskite films is crucial for reducing the non-radiative recombination and improving device performance. In this study, succinic acid (SA) derivatives varying active sites and spatial configurations are designed to modulate defects and crystallization in perovskite film. The SA derivative with two symmetric Br atoms, dibromosuccinic acid (DBSA), exhibits the optimal spatial arrangement for defect passivation. Experimental and theoretical results indicate that the carboxyl group and atomic Br in DBSA synergistically interact with the under-coordinated Pb2+ . Moreover, the strong electronegativity of Br efficiently stabilizes the formamidinium cation via electrostatic interaction. Consequently, film quality is significantly improved and non-radiative recombination is markedly depressed, resulting in a photoluminesence lifetime of exceeding 4µs of and a carrier diffusion length of 3µm. An exceptional efficiency of 25.41% (certified at 25.00%) along with a high fill factor of 84.39% and excellent long-term operational stability have been achieved finally.

Lateral Photoelectric Effect In Iron-Silicon Dioxide-Compensated Silicon Hybrid Structures

This article presents experimental results on the technology of obtaining and studying the lateral photoelectric effect (LPE) in hybrid structures (HS) of the Fe/SiO2/p-Si&lt;B, Mn&gt; and Fe/SiO2/n-Si&lt;B, Mn&gt; types. The technology for obtaining such HS consists of two parts: firstly, obtaining compensated (C), highly compensated (HC), and over-compensated (OC) samples of Si &lt;B, Mn&gt;. Secondly, obtaining HS Fe/SiO2/p-Si&lt;B, Mn&gt; and Fe/SiO2/n-Si&lt;B, Mn&gt;. Based on the results, it is shown that sufficiently good HS has been obtained. Experiments on the study of LPE have shown that in the studied HS there is a pronounced manifestation of the lateral photoelectric effect, the magnitude and nature of which strongly depend on the type of conductivity and resistivity of the compensated silicon. The observed features are explained by the fact that in С, HC, and OC silicon samples, impurities that create deep levels in the silicon band gap form various multi-charged complexes that modulate the energy band of silicon, which lead to significant changes in its physicochemical and generation-recombination properties, which underlies the observed effects. Based on the LPE studies, depending on the contact distance, it is possible to determine the numerical values of the diffusion lengths of the minor current carriers (Lp and Ln), their lifetimes (τp and τn), and diffusion coefficients (Dp and Dn) on the substrate material.

Impact of Solid-State Charge Injection on Spectral Photoresponse of NiO/Ga2O3 p–n Heterojunction

Forward bias hole injection from 10-nm-thick p-type nickel oxide layers into 10-μm-thick n-type gallium oxide in a vertical NiO/Ga2O3 p–n heterojunction leads to enhancement of photoresponse of more than a factor of 2 when measured from this junction. While it takes only 600 s to obtain such a pronounced increase in photoresponse, it persists for hours, indicating the feasibility of photovoltaic device performance control. The effect is ascribed to a charge injection-induced increase in minority carrier (hole) diffusion length (resulting in improved collection of photogenerated non-equilibrium carriers) in n-type β-Ga2O3 epitaxial layers due to trapping of injected charge (holes) on deep meta-stable levels in the material and the subsequent blocking of non-equilibrium carrier recombination through these levels. Suppressed recombination leads to increased non-equilibrium carrier lifetime, in turn determining a longer diffusion length and being the root-cause of the effect of charge injection.

Obviating Ligand Exchange Preserves the Intact Surface of HgTe Colloidal Quantum Dots and Enhances Performance of Short Wavelength Infrared Photodetectors.

A large volume, scalable synthesis procedure of HgTe quantum dots (QDs) capped initially with short-chain conductive ligands ensures ligand exchange-free and simple device fabrication. An effective n- or p-type self-doping of HgTe QDs is achieved by varying cation-anion ratio, as well as shifting the Fermi level position by introducing single- or double-cyclic thiol ligands, that is, 2-furanmethanethiol (FMT) or 2,5-dimercapto-3,4-thiadiasole (DMTD) in the synthesis. This allows for preserving the intact surface of the HgTe QDs, thus ensuring a one order of magnitude reduced surface trap density compared with HgTe subjected to solid-state ligand exchange. The charge carrier diffusion length can be extended from 50 to 90nm when the device active area consists of a bi-layer of cation-rich HgTe QDs capped with DMTD and FMT, respectively. As a result, the responsivity under 1340nm illumination is boosted to 1 AW-1 at zero bias and up to 40 AW-1 under -1V bias at room temperature. Due to high noise current density, the specific detectivity of these photodetectors reaches up to 1010 Jones at room temperature and under an inert atmosphere. Meanwhile, high photoconductive gain ensures a rise in the external quantum efficiency of up to 1000% under reverse bias.

The Spacer Cation with Disulfide Bond for Efficient and Stable Low‐Dimensional Dion–Jacobson Perovskite Solar Cells

AbstractLow‐dimensional (LD) perovskite has provided an exciting avenue for exploring stable perovskite solar cells (PSCs). However, PSCs based on LD perovskites still suffer from poor efficiency owing to unfavorable charge carrier dynamics. Here, cystamine (CYS) is employed as a ligand to construct LD Dion‐Jacobson (LDDJ) perovskite (CYS)MAn‐1PbnI3n+1 (n = 1, 2, 3…, MA: methylamine) for improving carrier properties. The disulfide bond not only changes the polarization characteristic but also increases the coupling between inorganic slabs due to the low barrier of rotation around the S‐S axis, thus reducing the exciton binding energy of CYS‐based LDDJ perovskite. Disulfide bonds provide a scene for charge localization in the interlayer region, which is conducive to reducing the anisotropy of charge transfer. Thanks to these merits, the (CYS)MA4Pb5I16 film delivers improved carrier diffusion length (electron for 1345 nm and hole for 950 nm) and mobility (9.23 cm2 V−1 S−1). As a result, the (CYS)(MA)4Pb5I16 PSC achieves a champion power conversion efficiency (PCE) of 16.52%, which is much higher than that of HDA and BA cations‐based PSCs (HDA: 1,6‐Hexanediamine, BA: Butylamine). Furthermore, the state‐of‐the‐art device only lost 8% of its initial PCE after 1600 h in the atmosphere.

Activating bulk light harvest and electron transfer by deeper K doping in g-C3N4 for highly enhanced photocatalytic H2O2 production

The incorporation of potassium (K) ions into polymerized carbon nitride has been experimentally proven to be an efficient strategy for enhancing photocatalytic performance. However, the diffusion doping in the traditional ionothermal post-treatment of pre-polymerized precursor results in only surface-level K doping. This limitation hinders the effective utilization of the incident light and photogenerated electrons in the deeper bulk, especially the mismatched zone between the depth of light absorption and carrier diffusion length. In this study, K dopants were successfully introduced into the deep bulk of carbon nitride while maintaining the integrity of heptazine skeleton structure by treating exfoliated nanosheets. Compared to the superficially doped counterpart, both experiments and theoretical calculations indicate the deeper K dopants not only activate the bulk light harvest and facilitate carrier separation, but also fabricate an efficient electron transfer bridge. This bridge is responsible for extracting the electrons to the surface, thus facilitating the O2 reduction reaction. Consequently, a 139-fold enhancement in the H2O2 production rate over pristine carbon nitride was achieved, surpassing the performance of most recently reported photocatalysts. This study would deepen the understanding of the role of bulk doping and stimulate the development of doping beyond the superficial zone.

Large‐Scale Perovskite Single Crystal Growth and Surface Patterning Technologies

In the past decade, metal halide perovskite polycrystalline films have witnessed significant advancements in the field of high‐performance optoelectronic devices, including photodetectors, solar cells, light‐emitting diodes, and lasers. Perovskite films with periodic micro/nanoarrays have garnered substantial attention due to their capability not only to improve the efficiency of individual devices but also to hold great promise for future commercialization. Surpassing their polycrystalline counterparts, perovskite single crystals typically exhibit longer carrier diffusion lengths, extended carrier lifetimes, and enhanced carrier mobility due to the absence of grain boundaries and reduced defects, positioning them as promising candidates for both fundamental studies and advanced optoelectronic devices. To this end, significant endeavors have been dedicated to the development of diverse methodologies for synthesizing large‐scale perovskite single crystals, including bulk single crystals and single‐crystal thin films. Furthermore, aiming to integrate the distinctive functionality with single crystals, considerable efforts have been directed toward the design of certain patterns on single‐crystal surfaces. Herein, this review presents recent progress in technologies for the preparation of large‐scale single crystals and the approaches to patterning their surfaces, highlights the unique advantages of each method, and presents their promising advances in various optoelectronic applications as well as the potential challenges.

Enhancing the Efficiency of Inverted Organic Solar Cells with Treatment Techniques: Numerical and Experimental Study

The combination of UV-ozone and Al-doping enhancements in the ZnO ETL layer was studied for fullerene-based (P3HT:PCBM) and nonfullerene-based (J71:m-ITIC) solar cells. The study focused on morphological and interfacial defects and their relation to the electrical and optical properties of different Al-doped ZnO layers. The study also investigated the surface recombination velocity at the interface of the ZnO/active layer, as well as the carrier lifetime and diffusion length of the active layer theoretically. The most effective Al-doping dosage was 3% for P3HT:PCBM and 2% for J71:m-ITIC, attributed to the varying sensitivity of the active layer materials to morphological enhancement.

CsPbBr3 Nanocrystals as Efficient Photocatalysts for Dehydrohalogenation: Toward Environmentally Friendly Trichloroethylene Synthesis.

The demand for a benign alternative to energy-intensive industrial chemical transformations is critical. Lead halide perovskites have emerged as promising candidates due to their unique optoelectronic properties, including high absorption coefficients in the visible region, tunable band gaps, and long charge carrier-diffusion lengths. In this study, we present a model reaction to showcase the photocatalytic utility of perovskite nanocrystals (NCs). Specifically, we demonstrate the synthesis of trichloroethylene (TCEt) from 1,1,2,2-tetrachloroethane (TCE) using CsPbBr3 NCs under white light illumination. The band-edge positions of the NCs and the redox potential of TCE enable efficient electron transfer for C-Cl bond activation. Furthermore, while ensuring operational stability, CsPbBr3 NCs undergo light-controlled modification, leading to the formation of mixed-halide perovskite (CsPbBrxCl3-x) NCs during the reaction. This procedure yields a mixed-halide perovskite that maintains stability while containing the desired halide content. Additionally, the reaction produces HBr as a byproduct, serving as a self-cleaning technique to eliminate excess Br- ions from the solution. Ultimately, we achieve nearly 100% conversion of CsPbBr3 to pure CsPbCl3 NCs, with a full width at half-maximum of approximately 11.2 nm. Our clean and efficient approach to synthesizing TCEt using perovskite NCs provides interesting insights into violet light-emitting diode (LED) fabrication and color patterning. This study highlights the promising potential of perovskite materials for sustainable chemical transformations and optoelectronic applications.

Application of running fringes technique for measurement of photocarriers transport parameters in perovskite films

This study aims to contribute to the development of theoretical and experimental tools for characterizing the transport properties of perovskite semiconductors. In the context of existing transport characterization methods for perovskites, there is a need for techniques that can accurately assess the critical transport parameters, such as diffusion lengths, given the specific challenges posed, such as their inherent instabilities. The novel methodology employed involves the development of a theoretical model to describe the running fringes-induced photo-electromotive force (RF photo-EMF) effect in bipolar photoconductors with a rather general type of photoconductivity relaxation behaviors for both carriers. This model is founded on the theory of photoinduced space charge grating formation in semiconductors. Subsequently, RF photo-EMF experiments were conducted on methylammonium lead iodide (CH3NH3PbI3 or MAPI) polycrystalline films of varying grain sizes. By utilizing the RF photo-EMF technique, we successfully elucidated crucial transport and recombination characteristics, notably the ambipolar diffusion length and relaxation times of the charge carriers. Significantly, the developed theoretical model exhibited a remarkable agreement with the experimental results, highlighting its ability in explaining and predicting the behavior of charge carriers in perovskite semiconductors. The results of this study make a substantial contribution to the field of perovskite semiconductors by offering a novel theoretical and experimental approach to characterization of perovskites’ transport properties.