Differential Resistivity Measurements Research Articles

Demonstration of a Validated Direct Current Wearable Device for Monitoring Sweat Rate in Sports.

Sweat rate magnitude is a desired outcome for any wearable sensing patch dedicated to sweat analysis. Indeed, sweat rate values can be used two-fold: self-diagnosis of dehydration and correction/normalization of other physiological metrics, such as Borg scale, VO2, and different chemical species concentrations. Herein, a reliable sweat rate belt device for sweat rate monitoring was developed. The device measures sweat rates in the range from 1.0 to 5.0 µL min-1 (2 to 10 µL min-1 cm-2), which covers typical values for humans. The working mechanism is based on a new direct current (DC) step protocol activating a series of differential resistance measurements (spatially separated by 800 µm) that is gradually initiated by the action of sweat, which flows along a customized microfluidic track (~600 µm in width, 10 mm in length, and 235 µm in thickness). The device has a volumetric capacity of ~16 µL and an acquisition frequency between 0.010 and 0.043 Hz within the measured sweat rate range. Importantly, instead of using a typical and rather complex AC signal interrogation and acquisition, we put forward the DC approach, offering several benefits, such as simplified circuit design for easier fabrication and lower costs, as well as reduced power consumption and suitability for wearable applications. For the validation, either the commercial sweat collector (colorimetric) or the developed device was performed. In five on-body tests, an acceptable variation of ca. 10% was obtained. Overall, this study demonstrates the potential of the DC-based device for the monitoring of sweat rate and also its potential for implementation in any wearable sweat platform.

Novel Graphene-Based Reversible Physisorption Materials for High Hydrogen Uptake

Carbon-based nanomaterials (graphene, carbon nanotube, microporous carbon, graphitic carbon etc.) are excellent H2 storage materials due to high molecular H2 uptake at the micropores and large H2 adsorption at the graphene network via the formation of dipoles in H2 molecules through London dispersion forces. On the other hand, incorporation of transition metal nanoparticles within the nanocarbon network facilitates dissociation of H2 molecules into constituents H-atoms over the metal nanoparticles, followed by diffusion into the carbon nano-matrix via ‘spill-over’ effect for polarization/hybridization of metal-hydrogen to create high H2 binding energy for high hydrogen adsorption. Therefore, a nanocomposite of graphene-microporous carbon-metal nanoparticle network is expected to deliver excellent H2 uptake capacity and acts as a novel reversible physisorption material for hydrogen storage applications, which is very important for sustainable renewable energy integration.A simple, cost effective sputtering method is used to fabricate metal incorporated graphitic microporous carbon film and differential resistance measurement showed high H2 uptake. Average number of graphene layer formation is dependent on sputtering parameters, which manifest bi-to-multilayer graphene. With increase in graphene layers, H2 adsorption also increases due to a fourfold effect: higher molecular hydrogen uptake at the graphene layers, more active sites into the micropores, promotion of molecular dissociation into atomic hydrogen by the metal nanoparticles, and the formation of hydrogenated carbon via destruction of the π-bonds.

Unconventional Nonreciprocal Voltage Transition in Ag2Te Nanobelts

Nonreciprocal effects are consistently observed in noncentrosymmetric materials due to the intrinsic symmetry breaking and in high-conductivity systems due to the extrinsic thermoelectric effect. Meanwhile, nonreciprocal charge transport is widely utilized as an effective experimental technique for detecting intrinsic unidirectional electrical contributions. Here, we show an unconventional nonreciprocal voltage transition in topological insulator Ag2Te nanobelts. The nonreciprocal voltage develops from nearly zero to giant values under the applied current I ac and external magnetic fields, while remaining unchanged under various current I dc. This unidirectional electrical contribution is further evidenced by the differential resistance (dV/dI) measurements. Furthermore, the transition possesses two-dimensional properties under a tilted magnetic field and occurs when the voltage between two electrodes exceeds a certain value. We propose a possible mechanism based on the development of edge channels in Ag2Te nanobelts to interpret the phenomenon. Our results not only introduce a peculiar nonreciprocal voltage transition in topological materials but also enrich the understanding of the intrinsic mechanism that strongly affects nonreciprocal charge transport.

Andreev processes in mesoscopic multiterminal graphene Josephson junctions

There is growing interest in using multi-terminal Josephson junctions (MTJJs) as a platform to artificially emulate topological phases and to investigate complex superconducting mechanisms such as quartet and multiplet Cooper pairings. Current experimental signatures in MTJJs have led to conflicting interpretations of the salient features. In this work, we report a collaborative experimental and theoretical investigation of graphene-based four-terminal Josephson junctions. We observe resonant features in the differential resistance maps that resemble those ascribed to multiplet Cooper pairings. To understand these features, we model our junctions using a circuit network of coupled two-terminal resistively and capacitively shunted junctions (RCSJs). Under appropriate bias current, the model predicts that a current flowing between two diagonal terminals in a four-terminal geometry may be represented as a sinusoidal function of a weighted sum of the superconducting phases. We show that starting from a semi-classical model with diffusive current-phase relations, the MTJJ effectively emulates a general form of the expected current-phase relation for multiplet Cooper pairings. Our study therefore suggests that differential resistance measurements alone are insufficient to conclusively distinguish resonant Andreev reflection processes from semi-classical circuit-network effects.

Anomalous superconducting diode effect in a polar superconductor

A superconductor with broken time-reversal and inversion symmetry may exhibit nonreciprocal charge transport, including a nonreciprocal critical current, also known as superconducting diode effect. We report an intrinsic superconducting diode effect in a polar strontium titanate film. Differential resistance measurements reveal a superconducting state whose depairing current is polarity dependent. There is, however, no measurable deviation from Ohmic behavior, implying that this state does not arise from a bulk magnetochiral anisotropy. In the entire measurement range, the only deviation from linearity in the differential resistance is on the edge of the superconducting transition at high magnetic fields, likely due to the motion of flux vortices. Furthermore, the magnitude of the effect is preserved even when the in-plane magnetic field is oriented parallel to the current, indicating that this effect truly does not originate from a bulk magnetochiral anisotropy.

Synthesis of Phase-Pure Thermochromic VO2 (M1).

A highly reproducible, simple, and inexpensive synthesis method for obtaining phase-pure thermochromic monoclinic VO2 (M1) is presented. Vanadium(III) oxide and ammonium metavanadate were used as starting materials and no additional reducing agents are required. Heating a mixture of these two components under an argon atmosphere at 750 °C for 2-4 h provides the direct formation of VO2 (M1) without detectable impurity phases. The formation reaction of VO2 (M1) was studied using in situ powder X-ray diffraction (PXRD), where a pressed pellet of the precursor material was heated during the continuous collection of PXRD data on a two-dimensional detector. The formation takes place via at least two crystalline intermediate phases where the first forms at 170-185 °C (likely an ammonium and oxygen deficient (NH4)1-δVO3-δ phase), and the second at 230 °C (likely a more disordered phase due to the increased background intensity). We assume that the solid-state reaction between the unknown but likely disordered vanadate phase and vanadium(III) oxide starts at 395 °C in concert with the appearance of several other unknown crystalline phases. At 610-750 °C, phase-pure rutile VO2 (P42/mnm) is obtained, which upon cooling converts to monoclinic VO2 (M1). The product composition, microstructure, and homogeneity are characterized by Raman spectroscopy, scanning electron microscopy, transmission electron microscopy, and energy-dispersive X-ray spectroscopy. The synthesized VO2 (M1) has a sharp reversible insulator-to-metal transition at 71.3 °C during heating and 59.5 °C during cooling, as characterized using differential scanning calorimetry, and resistivity and magnetic property measurements.

Deep Neural Network-Based Physics-Inspired Model of Self-Sensing Displacement Estimation for Antagonistic Shape Memory Alloy Actuator

The paper introduces a self-sensing feature that utilizes differential resistance measurement of an antagonistic Shape Memory Alloy (SMA) actuator to estimate linear displacement. The external position sensor used for control feedback becomes extraneous while utilizing an electrical resistance as feedback. The self-sensing capability provides additional advantages such as the overall reduction in size, weight, and interface complexity of an actuator. SMA actuator wires were used in the antagonistic configuration for the bi-directional actuation of the targeted application. A Deep Neural Network (DNN) having Long Short Term Memory (LSTM) layers were used to estimate the dynamic relation of resistance and displacement. A novel DNN model was developed for estimation purposes inspired by the physics-based description of the SMA actuation phenomenon. Accordingly, DNN was developed using the first and last layers as LSTM and a middle layer of feedforward neural network. Estimation results are presented with performance evaluation in terms of the R-squared index and mean absolute error (MAE) of the proposed model; also, the model has been compared with the generic LSTM 2-layered model.

Performance analysis of constant current heated antagonistic shape memory alloy actuator using a differential resistance measurement technique

This work presents the development of a precise, constant current heating mechanism for an antagonistic shape memory alloy (SMA) actuator. The actuator was developed using a pair of SMA wires arranged in an antagonistic configuration. SMA possesses a unique phase-dependent, resistance variation property which is called self-sensing. This phenomenon is observed during thermal phase transition. A constant heating current was employed to measure combined differential resistance (ΔR) which provides insignificant hysteresis and linear relationship with displacement. ΔR eventually helps to determine the present position of the actuator for sensorless feedback control. The aim is to remove additional external sensors, reducing actuator footprint and interface complexity using the proposed study. The performance analysis of the actuator was evaluated under constant current by the tracking trajectory of reference signals. The tracking results confirmed the improvement in operating bandwidth by a reduction in displacement. The heating module mainly consisted of a low pass filter, operational amplifier with a current sense feedback mechanism that regulates the heating current in proportion to PWM signals. The result shows a significant 21% variation in the observed value of ΔR (1.200–0.254 Ω) between the major–minor loops. The study confirms linearity and maintains similarity by highest correlation 0.9508 during open-loop, which further improves to 0.9891 in close feedback reference tracking with an error band ±0.05 mm.

High hydrogen uptake by a metal-graphene-microporous carbon network

High-surface area carbon nanomaterials are promising candidate as reversible physisorption materials for hydrogen storage in personal transportation vehicles at moderate temperatures and pressures. Metal-incorporated graphitic microporous carbon is considered to be an excellent H2 storage material due to high molecular hydrogen uptake at the micropores coupled with considerable H2 adsorption at the graphitic network. A simple, cost-effective sputtering technique is adopted to fabricate metal-incorporated graphitic microporous carbon film and differential resistance measurements are carried out in H2 ambient to observe the high hydrogen uptake within the samples. Ultrathin amorphous carbon film is irradiated with metal nanoparticles which converts it into graphitic carbon, whereas sputtering plasma acts as dry-etchant to activate it into microporous carbon. Average number of graphene layer formation is observed to be dependent on sputtering parameters (current/voltage/time), which manifest bi-layer to multi-layer graphene sheets. With increase in the graphene layers, hydrogen adsorption also increases due to a four-fold effect - higher molecular hydrogen uptake at the graphene layers, more active sites into the micropores, promotion of molecular dissociation into atomic hydrogen by the metal nanoparticles, followed by adsorption at the active surface sites and the formation of hydrogenated carbon via destruction of the π-bonds.

Microwave characterization of a double-barrier GaAs/AlAs resonant tunneling diodes for active microstrip transmission lines

We describe a method of parameters extraction for the lumped element network representing resonant tunneling diodes (RTDs). The method is based on onchip reflection coefficient measurements in a wide frequency range from 1 kHz up to 60 GHz in combination with differential resistance measurements. We have proposed and fabricated double-barrier GaAs/AlAs RTDs embedded into the 50-Ohm coplanar transmission line section, suitable for onchip RF-measurements using a probe station and a vector network analyzer. A good agreement between the experimental S11-parameter curves and the curves calculated from the equivalent lumped network is obtained for various RTD bias voltages. A possible operation of a distributed RTDs as an active microstrip transmission line (MTL) is also discussed. Experimentally extracted parameters of the lumped equivalent network are used to define amplification conditions in MTLs based on distributed RTDs.

Peierls-type metal-insulator transition in carbon nanostructures

We report the observation of Peierls-type metal-insulator transition in carbon nanostructures formed by chemical vapor deposition inside the pore network of the ZSM-5 zeolite. The Raman spectrum of this nanocarbon@ZSM-5 indicates a clear signature of the radial breathing mode (RBM) for (3,0) carbon nanotubes that can constitute the carbon network segments. Electrical transport measurements on multiple few-micron-sized nanocarbon@ZSM-5 crystals showed metallic temperature dependence of resistance down to 30 K, at which point the resistance exhibited a sharp upturn that is accompanied by the opening of a quasigap at the Fermi level as indicated by the differential resistance measurements. Further Hall measurements have yielded both the sign of the charge carrier and its density. The latter demonstrated excellent consistency with the quasigap data. We employed first-principles calculations to verify that there can indeed be softening of the phonon modes in the (3,0) carbon nanotubes.

Electrical transport between a MoS2-based electric double-layer transistor and normal and superconducting Al

We present fabrication of a junction between an atomic layer molybdenum disulfide-based electric double layer transistor and an aluminum film, and electrical transport measurements between molybdenum disulfide (MoS2) carriers induced by strong electric fields due to its electric double-layer transistor and a conventional superconducting aluminum though Schottky barrier at the interface. A superconducting gap structure was observed in the differential resistance measurement of the dilution refrigerator temperature. Since the gap structures disappeared at about 900mK, the temperature change of this structure is caused due to aluminum superconductivity. However, as for the magnetic field change of the gap structures, the possibility of the coexistence of two kinds of superconducting states at the junction would be considered.

The Effects of Magnetic Dopant on the Structural and Electrical Properties in Superconducting YBaCu<sub>3</sub>O<sub>7-δ</sub> Ceramic

The work reported in this paper aims at a better understanding of the magnetic doping effects on the structural and electrical properties for a series of YBa2(Cu1-xCox)3O7-δ ceramics. The Co doped YBa2Cu3O7-δ are (YBCO) prepared by conventional solid state reaction method and characterized by X-ray diffraction (XRD) and scanning electron microscopy (SEM), differential thermal analysis (DTA) and resistivity measurements. The crystal lattice parameters are found to change due to the cobalt doping and tendency to a structure phase transition from orthorhombic to tetragonal, which is confirmed by the decrease of the degree of orthorhombicity. The morphology examination with SEM revealed gradual increases of grain size with x = 0.02 Co, a high porosity is observed in the doped samples compared to the pure one. The decomposition temperature of YBCO is pushed from temperatures above 975°C to lower temperatures of 945°C. The resistivity measurements of doped samples with x = 0.04 and 0.06; shows a deviation in from T-linear behavior due to the opening of a pseudogap.

On-Chip Andreev Devices: Hard Superconducting Gap and Quantum Transport in Ballistic Nb-In0.75 Ga0.25 As-Quantum-Well-Nb Josephson Junctions.

A superconducting hard gap in hybrid superconductor-semiconductor devices has been found to be necessary to access topological superconductivity that hosts Majorana modes (non-Abelian excitation). This requires the formation of homogeneous and barrier-free interfaces between the superconductor and semiconductor. Here, a new platform is reported for topological superconductivity based on hybrid Nb-In0.75 Ga0.25 As-quantum-well-Nb that results in hard superconducting gap detection in symmetric, planar, and ballistic Josephson junctions. It is shown that with careful etching, sputtered Nb films can make high-quality and transparent contacts to the In0.75 Ga0.25 As quantum well, and the differential resistance and critical current measurements of these devices are discussed as a function of temperature and magnetic field. It is demonstrated that proximity-induced superconductivity in the In0.75 Ga0.25 As-quantum-well 2D electron gas results in the detection of a hard gap in four out of seven junctions on a chip with critical current values of up to 0.2 µA and transmission probabilities of >0.96. The results, together with the large g-factor and Rashba spin-orbit coupling in In0.75 Ga0.25 As quantum wells, which indeed can be tuned by the indium composition, suggest that the Nb-In0.75 Ga0.25 As-Nb system can be an excellent candidate to achieve topological phase and to realize hybrid topological superconducting devices.

A deformation-processed Al-matrix/Ca-nanofilamentary composite with low density, high strength, and high conductivity

Light, strong materials with high conductivity are desired for many applications such as power transmission conductors, fly-by-wire systems, and downhole power feeds. However, it is difficult to obtain both high strength and high conductivity simultaneously in a material. In this study, an Al/Ca (20vol%) nanofilamentary metal-metal composite was produced by powder metallurgy and severe plastic deformation. Fine Ca metal powders (~200µm) were produced by centrifugal atomization, mixed with pure Al powder, and deformed by warm extrusion, swaging, and wire drawing to a true strain of 12.9. The Ca powder particles became fine Ca nanofilaments that reinforce the composite substantially by interface strengthening. The conductivity of the composite is slightly lower than the rule-of-mixtures prediction due to minor quantities of impurity inclusions. The elevated temperature performance of this composite was also evaluated by differential scanning calorimetry and resistivity measurements.

Shape memory alloy wire for self-sensing servo actuation

This paper reports on the development of a straightforward approach to realise self-sensing shape memory alloy (SMA) wire actuated control. A differential electrical resistance measurement circuit (the sensorless signal conditioning (SSC) circuit) is designed; this sensing signal is directly used as the feedback for control. Antagonistic SMA wire actuators designed for servo actuation is realized in self-sensing actuation (SSA) mode for direct control with the differential electrical resistance feedback. The self-sensing scheme is established on a 1-DOF manipulator with the discrete time sliding mode controls which demonstrates good control performance, whatever be the disturbance and loading conditions. The uniqueness of this work is the design of the generic electronic SSC circuit for SMA actuated system, for measurement and control. With a concern to the implementation of self-sensing technique in SMA, this scheme retains the systematic control architecture by using the sensing signal (self-sensed, electrical resistance corresponding to the system position) for feedback, without requiring any processing as that of the methods adopted and reported previously for SSA techniques of SMA.

Study of the applied stress on the transformation behaviour for the equiatomic shape memory alloy Ti-Ni

The present work aims to study the influence of the applied stress on the characteristics of the martensitic transformation. Measurements of differential scanning calorimetry (DSC) and electrical resistance (RE) were carried out for the thermal characterisation of the samples tested. Mechanical characterisation effectuated on a tensile testing machine under stress was also performed. It has been also shown that the application of stress causes an increase of the plastic deformation (martensitic and austenitic phase), which results in a two-way memory effect, which remains substantially stable regardless of the applied stress. We estimated in a qualitative manner the rate of defects is introduced during thermomechanical cycling under different constraints, a thermal cycling unconstrained in order to compare their microstructures of our samples with that of the reference one (without cycling).

Superconducting Properties in Tantalum Decorated Three-Dimensional Graphene and Carbon Structures

Unlike a two-dimensional (2D) electron system at the interface in a heterostructure, the 2D electrons in graphene are open to environment. As a result, many studies have been carried out in examining how adsorption of metal adatoms on graphene sheet can modify its electronic properties. For example, a tunable superconducting phase transition was recently observed in a tin decorated graphene sheet. There, the non-percolating tin clusters dope the graphene sheet and induce long-range superconducting correlations. More excitingly, it was predicted that lithium decorated graphene can display a much higher superconducting transition temperature than in the superconductivity in bulk graphite intercalated by lithium atoms. Three-dimensional (3D) graphene structures, a flexible and conductive interconnected graphene network, have generated a great deal of interests in recent years. Compared to a 2D graphene sheet, surface area in a 3D graphene structure is greatly enhanced. Furthermore, 3D graphene maintains the outstanding electrical, thermal, and mechanical properties as in 2D graphene. Therefore, 3D graphene structures are expected to play an important role in flexible electronics, sensors and energy storage applications (e.g., supercapacitors, battery electrodes, and hydrogen storage). In this talk, I will present our recent electronic transport results on superconducting properties in tantalum decorated 3D graphene and carbon structures, following pioneering work of decorating 2D graphene sheets with superconducting materials. A superconducting transition is observed in both composite thin films. The magnetoresistance at various temperatures and differential resistance dV/dI at different magnetic fields were also carried out. Moreover, an anomalously large cooling effect was observed in the differential resistance measurements in our 3D graphene - tantalum composite when the device turned superconducting. This surprisingly large cooling effect plus the nature of flexible 3DG thin film may find promising applications in solid-state cooling.

Enhanced superconductivity at the interface ofW/Sr2RuO4point contacts

Differential resistance measurements are conducted for point contacts (PCs) between tungsten tip approaching along the $c$ axis direction and the $ab$ plane of Sr$_{2}$RuO$_{4}$ single crystal. Three key features are found. Firstly, within 0.2 mV there is a dome like conductance enhancement due to Andreev reflection at the normal-superconducting interface. By pushing the W tip further, the conductance enhancement increases from 3\% to more than 20\%, much larger than that was previously reported, probably due to the pressure exerted by the tip. Secondly, there are also superconducting like features at bias higher than 0.2 mV which persists up to 6.2 K, resembling the enhanced superconductivity under uniaxial pressure for bulk Sr$_{2}$RuO$_{4}$ crystals but more pronounced here. Third, the logarithmic background can be fitted with the Altshuler-Aronov theory of tunneling into quasi two dimensional electron system, consistent with the highly anisotropic electronic system in Sr$_{2}$RuO$_{4}$.

Superconducting properties in tantalum decorated three-dimensional graphene and carbon structures

We present here the results on superconducting properties in tantalum thin films (100 nm thick) deposited on three-dimensional graphene (3DG) and carbon structures. A superconducting transition is observed in both composite thin films with a superconducting transition temperature of 1.2 K and 1.0 K, respectively. We have further measured the magnetoresistance at various temperatures and differential resistance dV/dI at different magnetic fields in these two composite thin films. In both samples, a much large critical magnetic field (∼2 T) is observed and this critical magnetic field shows linear temperature dependence. Finally, an anomalously large cooling effect was observed in the differential resistance measurements in our 3DG-tantalum device when the sample turns superconducting. Our results may have important implications in flexible superconducting electronic device applications.