Dielectric Modulation Research Articles

Dielectric and gyromagnetic structure modulations of Zn–Sn codoped yttrium–iron–garnet based on the density‐generalized functional theory and P–V–L bond theory

AbstractHerein, the crystal structure, dielectric properties, and gyromagnetic characteristics of Zn–Sn codoped Y3ZnxSnxFe5−2xO12 (x = 0.0–0.5) prepared using a conventional ceramic process were investigated. According to the first‐principles’ calculations and complex crystal bonding theory, Zn2+–Sn4+ codoping can increase the relative dielectric constant (εr) by enhancing the average ionicity. The x‐ray photoelectron spectroscopy (XPS) and Raman analysis results indicate that an appropriate amount of Zn2+–Sn4+ codoping can help improve the microscopic morphology, maintain the appropriate ratio of divalent iron ions, and reduce the microwave magnetic and electrical losses of YIG ferrites. The optimized microwave properties are as follows. Y3Zn0.3Sn0.3Fe4.4O12 after sintering at 1400°C; εr = 15.6; dielectric loss, that is, tanδε = 4.3 × 10−4; saturation magnetization, that is, 4πMS = 2244 G; ferromagnetic resonance linewidth, that is, ΔH = 37 Oe. These properties can help improve the performance of high‐frequency microwave components by enhancing the properties of ferrite.

Versatile cellulose nanofibril assisted preparation of ultralight, scalable carbon nanotube aerogel-based electromagnetic wave absorbers with ultrahigh reflection loss

The sustainable cellulose nanofibril (CNF) was efficiently utilized to facilitate the preparation of a type of ultralight, high-porosity carbon nanotube (CNT) hybrid aerogel-based electromagnetic wave (EMW) absorbers. CNF not only serves as a green surfactant to avoid the agglomeration of CNT, but also acts as supporting matrix or binder to promote the construction of porous CNT-based aerogels. Furthermore, the CNF precursor contributes to the generation of CNF-derived nanocarbon (CNFC) for a high-efficiency dielectric modulator, leading to the tuneable electromagnetic parameters and good impedance matching. Combined with the loss capacity of CNFC, the EMW absorption performance of CNT-based aerogels is enhanced. Consequently, the hybrid aerogels show EMW absorption performance involving an effective absorption bandwidth of 3.3 GHz and an ultrahigh reflection loss of −76.46 dB at a filling ratio of 5 wt%, outperforming that of other CNT-based EMW absorbers ever reported. The synergistic effects of multiple EMW absorption mechanisms for the hybrid aerogels were analyzed at length, demonstrating the indispensable roles of the CNF or CNFC in constructing high-efficiency CNT-based EMW absorbers. Combined with the green, sustainable, facile, and scalable preparation approach, the carbon aerogel-based EMW absorbers are highly promising for applications in electromagnetic compatibility or protection and aerospace.

Fabrication and characterization of (Mg0.8Zn0.2)(Ti0.99Sn0.01)O3 ceramics as a 4.0 GHz resonator in dielectric resonator oscillator module

Fabrication and characterization of (Mg0.8Zn0.2)(Ti0.99Sn0.01)O3 ceramics as a 4.0 GHz resonator in dielectric resonator oscillator module

Numerical Simulation of Performance Metrics of Dual Metal Gate Carbon Nanotube Field Effect Transistor (DM-CNTFET) for Numerous Sensing Purposes

The research revolves around investigating practical applications of devices incorporating Carbon Nanotubes (CNTs). As the surging global demand urges researchers to aim for better performance, the inclusion of materials such as CNTs also push the boundaries of downscaling. Keeping these two critical conditions in mind, Silicon has started acting as a bottleneck for researchers. Despite the enormous stability it brings in its favour, the downscaling restrictions prevent it from being considered as a long-term sustainable solution. CNT is a paramount material in the sensing application industry due to the high speed of detection, much enhanced scaling technology, and enhanced efficiency. The novel part of this work involves the Plasma Enhanced Chemical Vapor Deposition (PECVD) grown CNT as channel in the proposed device and further implementing this type of device for sensing applications. In order to accomplish this, the first step is the carving of a nanogap cavity in the SiO2 oxide layer. Subsequently, the research focuses on implementing the technique of dielectric modulation by immobilization of different molecules. It can be easily noted that altering the dielectric constant of the nanogap cavity has a direct impact on the device characteristics. As the value of dielectric constant increases, a boost in performance metrics such as drain current, transconductance, output conductance, ION/IOFF ratio, ION/IOFF Sensitivity can be noted. All the mentioned metrics show increase in values on increasing the dielectric constant of the molecule. When the same device is compared to its Silicon counterpart, the stark difference in magnitude of the respectively mentioned values is maintained. At all investigated dielectric constants, the CNT based device showcases a 10% better sensitivity ratio compared to its Silicon counterpart. This investigation holds a lot of significance in understanding the practical applicability of the proposed device and opens avenues in healthcare industry for disease detection etc.

Dielectric modulation strategy of carbon nanotube field effect transistors based pressure sensor: towards precise monitoring of human pulse

Continuous monitoring of arterial pulse has great significance for detecting the early onset of cardiovascular disease and assessing health status, while needs pressure sensors with high sensitivity and signal-to-noise ratio (SNR) to accurately capture more health information concealed in pulse waves. Field effect transistors (FETs) combined with the piezoelectric film is an ultrahigh sensitive pressure sensor category, especially when the FET works in the subthreshold regime, where the signal enhancement effect on the piezoelectric response is the most effective. However, controlling the work regime of FET needs extra external bias assistance which will interfere with the piezoelectric response signal and complicate the test system thus making the scheme difficult to implement. Here, we described a gate dielectric modulation strategy to match the subthreshold region of the FET with the piezoelectric output voltage without external gate bias, finally enhancing the sensitivity of the pressure sensor. A carbon nanotube field effect transistor and polyvinylidene fluoride (PVDF) together form the pressure sensor with a high sensitivity of 7 × 10−1 kPa−1 for a pressure range of 0.038–0.467 kPa and 6.86 × 10−2 kPa−1 for a pressure range of 0.467–15.5 kPa, SNR, and the ability to continuously monitor pulse in real-time. Additionally, the sensor enables high-resolution detection of weak pulse signals under large static pressure.

Design and simulation of junctionless nanowire tunnel field effect transistor for highly sensitive biosensor

This paper investigates symmetrical design of a Junctionless Nanowire Tunnel-Field-Effect-Transistor (JL-NWTFET) for highly sensitive biosensor. JL-NWTFET deployed using Gate-All-Around (GAA) structure and Dielectric-Modulation (DM) technique to detects the bio-logical molecules such as uricase, streptavidin, protein, biotin, uriease, Amino-propyl triethoxysilane (APTS), ChOx etc. The variation in the drain current (ID), subthreshold slope (SS), transconductance (gm), and ION/IOFF ratio considered as the sensitivity parameters of the JL-NWTFET to detect different biological molecules in the cavity area. The cavity area is formed by a layer in between the source-gate oxides and source-gate electrodes. The JL-NWTFET shows the reduced leakage currents in terms of Short-Channel-Effects (SCEs) and superior controllability over the channel. The proposed JL-NWTFET has been designed with uniform doping concentration (1 × 10−19 cm−3), and gate work-function (φgate = 4.8eV). The high sensitivity (∼109) is observed for APTS biomolecule with dielectric constant (K = 3.57).

Impact of InGaN notch on sensitivity in dielectric modulated dual channel GaN MOSHEMT for label-free biosensing

The effect of InGaN notch on sensitivity and Dielectric Modulated (DM) Double Heterojunction (DH) dual channel AlGaN/GaN/InGaN/GaN MOSHEMT (Metal Oxide Semiconductor High Electron Mobility Transistor) for detecting the label-free biomolecules has been investigated in this paper. Biomolecules can be inserted into the nanocavity formed by etching the insulating layer under the gate electrode. The insulator (Al2O3) as a dielectric improves the drive current and device sensitivity because of low leakage and high scalability. In this proposed structure, the presence of InGaN notch increases the carrier confinement in the channel, thereby improving the device sensitivity. The device is simulated using Sentaurus TCAD, and the results show a significant increase in drain current (IDS), up to 335 mA/mm. The optimization of the device parameters exhibits a high sensitivity (∼74%), making it suitable for precise label-free biosensing.

Sensitivity assessment of dielectric modulated GaN material based SOI-FinFET for label-free biosensing applications

Abstract This work presents the sensitivity assessment of gallium nitride (GaN) material-based silicon-on-insulator fin field effect transistor by dielectric modulation in the nanocavity gap for label-free biosensing applications. The significant deflection is observed on the electrical characteristics such as drain current, transconductance, surface potential, energy band profile, electric field, sub-threshold slope, and threshold voltage in the presence of biomolecules owing to GaN material. Further, the device sensitivity is evaluated to identify the effectiveness of the proposed biosensor and its capability to detect the biomolecules with high precision or accuracy. The higher sensitivity is observed for Gelatin (k = 12) in terms of on-current, threshold voltage, and switching ratio by 104.88%, 82.12%, and 119.73%, respectively. This work is performed using a powerful tool, three-dimensional (3D) Sentaurus Technology computer-aided design using a well-calibrated structure. The results pave the way for GaN-SOI-FinFET to be a viable candidate for label-free dielectric modulated biosensor applications.

Si–Ge based vertical tunnel field-effect transistor of junction-less structure with improved sensitivity using dielectric modulation for biosensing applications

A dielectric modulation strategy for gate oxide material that enhances the sensing performance of biosensors in junction-less vertical tunnel field effect transistors (TFETs) is reported. The junction-less technique, in which metals with specific work functions are deposited on the source region to modulate the channel conductivity, is used to provide the necessary doping for the proper functioning of the device. TCAD simulation studies of the proposed structure and junction structure have been compared, and showed an enhanced rectification of 104 times. The proposed structure is designed to have a nanocavity of length 10 nm on the left- and right-hand sides of the fixed gate dielectric, which improves the biosensor capture area, and hence the sensitivity. By considering neutral and charged biomolecules with different dielectric constants, TCAD simulation studies were compared for their sensitivities. The off-state current I OFF can be used as a suitable sensing parameter because it has been observed that the proposed sensor exhibits a significant variation in drain current. Additionally, it has been investigated how positively and negatively charged biomolecules affect the drain current and threshold voltage. To explore the device performance when the nanogaps are fully filled, half filled and unevenly filled, extensive TCAD simulations have been run. The proposed TFET structure is further benchmarked to other structures to show its better sensing capabilities.

Fabrication of Advanced Cellulosic TriboelectricMaterials via Dielectric Modulation.

The rapid rise of triboelectric nanogenerators (TENGs), which are emerging energy conversion devices in advanced electronics and wearable sensing systems, has elevated the interest in high-performance and multifunctional triboelectric materials. Among them, cellulosic materials, affording high efficiency, biodegradability, and customizability, are becoming a new front-runner. The inherently low dielectric constant limits the increase in the surface charge density. However, owing to its unique structure and excellent processability, cellulose shows great potential for dielectric modulation, providing a strong impetus for its advanced applications in the era of Internet of Things and artificial intelligence. This review aims to provide comprehensive insights into the fabrication of dielectric-enhanced cellulosic triboelectric materials via dielectric modulation. The exceptional advantages and research progress in cellulosic materials are highlighted. The effects of the dielectric constant, polarization, and percolation threshold on the charge density are systematically investigated, providing a theoretical basis for cellulose dielectric modulation. Typical dielectric characterization methods are introduced, and their technical characteristics are analyzed. Furthermore, the performance enhancements of cellulosic triboelectric materials endowed by dielectric modulation, including more efficient energy harvesting, high-performance wearable electronics, and impedance matching via material strategies, are introduced. Finally, the challenges and future opportunities for cellulose dielectric modulation are summarized.

A Novel Dielectric Modulated Gate-Stack Double-Gate Metal-Oxide-Semiconductor Field-Effect Transistor-Based Sensor for Detecting Biomolecules

In this article, the performance of n-type junctionless (JL) double-gate (DG) MOSFET-based biosensors with and without gate stack (GS) has been studied. Here, the dielectric modulation (DM) method is applied to detect biomolecules in the cavity. The sensitivity of n-type JL-DM-DG-MOSFET and n-type JL-DM-GSDG-MOSFET-based biosensors have also been evaluated. The sensitivity (ΔVth) improved in JL-DM-GSDG MOSFET/JL-DM-DG-MOSFET-based biosensors for neutral/charged biomolecules is 116.66%/66.66% and 1165.78%/978.94%, respectively, compared with the previously reported results. The electrical detection of biomolecules is validated using the ATLAS device simulator. The noise and analog/RF parameters are compared between both biosensors. A lower threshold voltage is observed in the GSDG-MOSFET-based biosensor. The Ion/Ioff ratio is higher for DG-MOSFET-based biosensors. The proposed GSDG-MOSFET-based biosensor demonstrates higher sensitivity than the DG-MOSFET-based biosensor. The GSDG-MOSFET-based biosensor is suitable for low-power, high-speed, and high sensitivity applications.

MXene effectively enhances the electron-withdrawing (EW) ability and dielectric properties of PVDF-TrFE nanofibers for triboelectric nanogenerators

Functional fillers can improve the triboelectric characteristics of polyvinylidene difluoride (PVDF)-based material, a typical triboelectric nanogenerator (TENG) negative dielectric layer material. MXene fillers can significantly enhance the triboelectric characteristics of PVDF-based negative dielectric layers by dielectric modulation. However, the effect of MXene as a highly electronegative filler on the electron-withdrawing (EW) ability of PVDF/MXene composite films is frequently ignored. In this work, polyvinylidene fluoride-trifluoro-ethylene (PVDF-TrFE)/MXene (Ti3C2Tx) composite nanofibers films (PMNFs) are prepared by electrospinning. When the MXene content is 0.8 wt%, PMNFs-based TENG achieves a maximum output power density of 250 mW/m2 at a matching external load resistance of 4 MΩ and a maximum open-circuit voltage (VOC) of 85 V, 2.66 times higher than that of the PVDF-TrFE-based TENG. Enhancing the EW ability and the dielectric properties by adding MXene are considered and proven by examining the work function (WF) and dielectric constant (and loss), respectively. Finally, we design a tremor-based TENG by PMNFs and develope a novel respiratory monitor to achieve real-time respiratory monitoring, which should offer fresh perspectives on creating respiratory monitoring devices.

Layer-dependent dielectric modulation in WS2/GaN heterostructures

Controlling over the electronic structure of two-dimensional (2D) semiconductors is crucial to unlock their full potential in the applications in future nanodevices. Here, we demonstrate a layer-dependent dielectric modulation of electronic structures in multilayer ${\mathrm{WS}}_{2}/\mathrm{GaN}$ heterostructures. The results investigated by means of in situ scanning tunneling microscopy/spectroscopy and photoluminescence spectroscopy show that the fluctuations of the dielectric environment induced by local corrugation of the GaN surface dramatically tune the band structure of monolayer ${\mathrm{WS}}_{2}$ with a large downshift of the valence band maximum by about 1.12 eV. Under the shielding effect of the first-layer ${\mathrm{WS}}_{2}$, the dielectric environment shows a weak modulation effect on the second-layer, and even has negligible influence on the third- and fourth-layer ${\mathrm{WS}}_{2}$. The relationship between dielectric environment and interfacial distance is further simulated through first-principles calculations. The electrostatic potential energy, differential charge densities, and charge transfer of the ${\mathrm{WS}}_{2}/\mathrm{GaN}$ heterostructure under different interfacial distances reveal that the differences of charge redistributions between the ${\mathrm{WS}}_{2}/\mathrm{GaN}$ interface and ${\mathrm{WS}}_{2}$ interlayer are responsible for the layer-dependent dielectric modulation. This work offers some references for the design and fabrication of novel 2D optoelectronic devices.

Modeling and Performance Analysis of a Split-Gate T-Shape Channel DM DPDG-TFET Label-Free Biosensor

This article proposes, for the first time, a split-gate T-shape channel dielectrically modulated (DM) double-gate TFET (DGTFET) with a drain pocket (DP). This device can be used as a label-free biosensor. The analytical model for DM DPDG-TFET has been developed and it has been validated against commercial simulation software (Silvaco TCAD). This article intends to focus both on the sensitivity of the biosensor and its performance as a tunnel field-effect transistor (TFET) device. This has been accomplished by improvisations in the channel shape. The performance of the device has thoroughly been investigated in terms of threshold voltage, subthreshold slope, ON current, and OFF current. Due to the novel design, the proposed TFET possesses higher sensitivity, higher <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${I}_{ {\text{ON}}}/{I}_{ {\text{OFF}}}$ </tex-math></inline-formula> current ratio, and lower subthreshold slope. The inclusion of DP at the drain–channel junction proves to be a successful way to remove the ambipolarity completely. The high ON current without any ambipolarity has been achieved by optimizing the DP length and its doping concentration. The proposed T-shape DM DPDGTFET proves itself to be superior to several reported devices in terms of both biosensor as well as field-effect transistor (FET) device. The presence and absence of charge of various biomolecules are taken into consideration for evaluation of device sensitivity as a label-free biosensor.

Dielectric Modulated Nanotube Tunnel Field-Effect Transistor as a Label Free Biosensor: Proposal and Investigation.

Dielectric modulated (DM) field-effect transistors (FET) have gained significant popularity for label-free detection of biomolecules. However, the inherent short channel effects limit their sensitivity, scalability and energy-efficiency. Therefore, to realize the true potential of the DMFET based biosensors, in this work, we propose a highly scalable, extremely sensitive and energy-efficient DM nanotube tunnel FET (NT-TFET) biosensor for label-free detection of biomolecules by modifying the structure of the conventional NT-TFET. The modified architecture facilitates the realization of a nanocavity at the source-channel tunneling junction and also provides stability to the immobilized biomolecules. We have performed an extensive analysis of the performance of the proposed DM NT-TFET biosensor in the presence of different representative target biomolecules characterized by different dielectric constants, and/or ionized charge densities using calibrated TCAD simulations. Our results indicate that the proposed DM NT-TFET exhibits an extremely high threshold voltage sensitivity ( SVth ) of 0.44, a high selectivity exceeding four orders of magnitude, ON-state current sensitivity ( SION ) of more than five orders of magnitude and could be a promising alternative to the conventional FET based dielectric modulated biosensors. Moreover, the sensitivity of the proposed DM NT-TFET could be further improved by utilizing alternate source materials with lower bandgap or by probing the transient response of the drain current and exploiting the difference in the settling time for different biomolecules with different dielectric constant ( κ ).

Performance Analysis of the Dielectrically Modulated Junction-Less Nanotube Field Effect Transistor for Biomolecule Detection.

The design of a high-performance Dielectrically Modulated Field Effect Transistor (DMFET) with smaller device dimension (channel length ≤ 100nm) has recently drawn significant research attention for point-of-care (POC) diagenesis applications. Driven by this paradigm, a Hetero-Gate Metal Dielectrically Modulated Junction-Less Nanotube Field Effect Transistor (DM-JLNFET) architecture is introduced and systematically investigated for label-free electrochemical biosensing application with the help of extensive numerical device simulations. The DM-JLNFET is carefully designed to exploit the advantages of superior gate control over channel electrostatics and electron injection component as well as strong immunity towards the short channel effects that lead to a notably high sensing performance compared to its conventional counterparts. In this context, the underlying physics of the transduction mechanism is analyzed in detail based on the device electrostatics and the carrier transport mechanism. The sensing performance of the proposed biosensor is quantified in terms of the drain current and threshold voltage sensitivities, which represents the relative modulations in these parameters with biomolecule conjugation. Typically, the DM-JLNFET exhibits a drain current and threshold voltage sensitivities as high as 1×10 12 and 0.70, respectively, for biomolecule dielectric constant above 2. Furthermore, the sensing performance demonstrates strong immunities towards non-uniform cavity occupancy. Finally, extensive comparative performance analysis with Dielectrically Modulated Nanowire Field Effect Transistor (DM-NWFET) is performed. The results exhibit that the proposed DM-JLNFET can offer more than 100% and eight orders of magnitude improvements in the threshold voltage and drain current sensitivities, respectively, for a range of small biomolecule dielectric constants.

Dual Cavity Dielectric Modulated Ferroelectric Charge Plasma Tunnel FET as Biosensor: For Enhanced Sensitivity.

This work reports a biosensor based on the dual cavity dielectric modulated ferroelectric charge plasma Tunnel FET (FE-CP-TFET) with enhanced sensitivity. By incorporating underlap and dielectric modulation phenomena, ultra sensitive, and label-free detection of biomolecules is achieved. The cavity is carved underneath the source-gate dielectric for the immobilization of the biomolecules. The ferroelectric (FE) material is used as a gate stack to realize a negative capacitance effect to amplify the low gate voltage. To avoid the issues with metallurgical doping such as random dopant fluctuations (RDFs), ambipolar conduction, and increased thermal budget, the charge plasma concept is deployed. Based on our exhaustive ATLAS 2D TCAD study, the electric field, hole concentration, and energy band diagram of the proposed device are critically analyzed to provide a better insight into the biosensor working mechanism. Here, two different figures-of merits (FOMs) for the proposed biosensor are investigated such as sensitivity and linearity. Sensitivity has been measured in terms of drain current, [Formula: see text] to [Formula: see text] ratio, electric field, and transconductance sensitivity. Linearity analysis of the proposed structure includes [Formula: see text] ratio. The reported biosensor is capable of detecting several biomolecules such as (neutral and charged as well) Streptavidin (2.1), 3-aminopropyltriethoxysilane (APTES) (K =3.57 ), Keratin (K =8 ), T7 (K =6.3 ) and Gelatin (K =12 ). It was observed that the optimized cavity structure demonstrates high drain current sensitivity ( 2.7×108 ) as well as high [Formula: see text] sensitivity ( 1.45×108 ). Further, the linearity analysis shows that the Pearson's coefficient of both structures have been achieved as ( r2 ≥ 0.8 ). It is conferred from the results that our biosensor can be a better alternative for the detection of the various neutral and charged biomolecules.

Design and Performance Assessment of Split Gate Dielectric Modulated Junction less TFET Variation of Hfo2 by the Divided Gate Insulator for High Sensitivity Using Tcad Simulation

A number of more recent discoveries in microbiology have made reliable identification of nano-biomolecules and extensive analyses of them necessary. A variety of proteins, including DNA, biotin-streptavidin, amino acids, as well as many types of bacteria and viruses, must be found and analyzed in order to fully comprehend any odd behavior occurring inside of live cells. Rapid testing and detection are essential steps in preventing undiscovered biohazards from eradicating the human race and other terrestrial living things. Since many decades ago, developing an accurate, affordable biosensor has been a struggle for scientists [1]. When compared to pricey laboratory-based sensors and detection methods, FET-based lab-on-chip nano biosensors appear to be a promising substitute. It is significantly more dependable than conventional bulk sensors because of its size, affordability, low power consumption, resilience, faster response time, and better sensitivity [1]. Due to their precision, adaptability, and compatibility with embedded systems, dielectrically modulated FET biosensors with Nano cavities are emerging as a promising research area that can yield useful data on bio-analyses. As an alternative to conventionally doped TFET devices, using a charge plasma SiGe-heterojunction double gate TFET, a label-free biosensor can be produced, bypassing the need for conventional semiconductors, which require a large thermal budget and are susceptible to random dopant fluctuations (RDFs). The effect of changing the dielectric constant (k), the positive and negative charge density, the gate work function, and the cavity size has been investigated to better understand how these factors affect the performance of the proposed biosensor. These parameters modify the biosensor's electric characteristics, improving detection [2]. There is also discussion of how these factors influence the device's drain current, electric field, surface potential, sub-threshold swing (SS), insulator-to-metal film (ION/IOFF) ratio, and electron tunneling rate (ETR). The sensitivity of the drain current in the proposed biosensor is also investigated. There is no restriction on whether or whether the proposed structure is used for charged or neutral molecules.Under lower supply voltages, it is discovered that the SG-DM current JLFET's sensitivity is high, measuring 1.2 *10^3, with a potential sensitivity of 1.4 V. A result, the SG-DM [2] JLFET exhibits good application potential while consuming little power and having ahigh sensitivity.

Design and Analysis of Charge Plasma-Based Vertical-Nanowire Tunnel FET for Biosensor

In the semiconductor industry, nanoscale devices have better ability to provide for biomolecules detection, but they face various problems during fabrication process, such as high doping concentration, random dopant fluctuation (RDF), higher production cost, low electrostatic control. To overcome these problems, charge plasma (CP) technique has been introduced by the formation of hafnium material at drain side and platinum material at source side with appropriate work-function. The proposed work charge plasma-based vertical-nanowire tunnel FET (CP-VNWTFET) has been designed and analyzed for biosensor application using different dielectric constant and gate underlap method by creating a cavity area under the gate metal. The sensitivity ([Formula: see text]) of biosensor is calculated in terms of change in drain-current ([Formula: see text]) and transconductance ([Formula: see text]) by immobilizing the biomolecules such as Urease, Keratin, Streptavidin, ChOX, Zein, Gluten using gate underlap and dielectric modulation technique. The performance parameters like subthreshold slope (SS), off-current ([Formula: see text]), on-current ([Formula: see text]), on/off current ratio ([Formula: see text]) of the CP-VNWTFET have also been observed while varying the neutral and charged biomolecules at various biased conditions. The device is simulated by using Silvaco ATLAS simulator. The proposed device has been found to be suitable for low power sensor design application.

TiN/BN composite with excellent thermal stability for efficiency microwave absorption in wide temperature spectrum

• The TiN/BN composite has been constructed via the in-situ synthesis method. • The stable dielectric loss ensures that TiN/BN composite exhibits robust high-temperature absorption properties at X-band. • The stable cyclic microwave absorption properties of TiN/BN composites provide a reliable guarantee for practical applications. High-efficiency and temperature-insensitive microwave absorbing materials (MAMs) are ideal for high-temperature electromagnetic attenuation. Herein, the titanium nitride/boron nitride (TiN/BN) composite with TiN as the loss unit and BN as the impedance matching unit has been constructed by the in-situ synthesis method. The insulating BN not only effectively regulates and optimizes the conductivity and impedance matching of the material but also imparts steady cyclic microwave absorption properties. The steady dielectric loss ensures that TiN/BN composite has robust high-temperature absorption properties at X-band, with a minimum reflection loss (RL min ) of −16.74 dB at 873 K and an effective absorption bandwidth (EAB) of 3.26 GHz in the temperature range of 293–873 K. Compared with the TiN/SiO 2 absorbers with a single system, the TiN/BN/SiO 2 composite keeps reliable high temperature absorbing properties at 873 K. This work confirms that wave-transparent materials for dielectric property modulation can resolve poor temperature stability of effective absorption and non-reusability for high-temperature absorbing materials, providing inspirations for designing efficiency high-temperature microwave absorbers.