Bifacial photovoltaics have rapidly gained significant market share; however, their thermal modeling is lagging behind. Reliable thermal modeling contributes to more robust predictions of the temperature-dependent output power, which emphasizes the need for accurate thermal models for emerging photovoltaic technologies. This study addresses the literature gap related to the validation of thermal models for bifacial photovoltaic (PV) systems. Key novelties include extending the investigation of bifacial PV temperature models to vertical installations and providing insights into their accuracy in challenging Nordic conditions. The applicability of common PV temperature models to bifacial panels was evaluated using experimental data collected from two bifacial systems with vertical and open-rack mounting. Temperature model parameters of Sandia, Faiman and PVsyst models for bifacial panels were extracted from both experimental and computationally simulated temperature data to investigate the use of computational methods in predicting model parameters and panel temperature. The good matching of experimental and simulated parameters with different installation geometries suggests that simulation is a powerful method to identify new parameters for solar devices with different material combinations and cell technologies. Further, one of the key questions was whether standard temperature model parameters—originally developed for monofacial panels—are suitable for bifacial panels. The results revealed that replacing the standard model parameters with bifacial-specific ones enhanced the accuracy of temperature estimation in all cases studied, e.g., for open-rack mounted bifacial panel 0.2 − 1.2 ∘ C depending on the temperature model. Overall, the findings of the study improve the prediction of power output of bifacial panels in different installations. • Applicability of photovoltaic temperature models to bifacial panels has been validated. • Model parameters and panel temperatures can be reliably predicted using simulations. • Panel-specific model parameters improve the temperature estimations.

Performance evaluation of al/ETLs/FASnI3/GO/Au PSCs using numerical and machine learning approaches

Investigating the impact of temperature variations on the device parameters of Gaussian Doped FinFETs

To compare the effects of the 45° Kelman phaco tip and the 45° Intrepid Balanced phaco tip used during torsional phacoemulsification in hard cataracts on intraoperative energy use and surgical times, as well as their effects on postoperative anterior segment parameters and the corneal endothelium. In this retrospective comparative study, 180 eyes of 180 patients who met the inclusion criteria were included, comprising 90 patients in the 45° Intrepid Balanced phaco tip group and 90 patients in the 45° Kelman phaco tip group. Clinical findings were obtained preoperatively and on postoperative Day 1 and month 1, corneal endothelial and morphological parameters assessed by specular microscopy, optical biometry measurements were obtained, and intraoperative phacoemulsification device parameters were recorded. The groups were compared in terms of preoperative characteristics, intraoperative parameters, and postoperative corneal findings. There were no significant differences between the groups in terms of preoperative demographic or ocular characteristics. Compared with the Kelman group, the Intrepid Balanced group had significantly lower mean torsional amplitude, torsional ultrasound time, cumulative dissipated energy, aspiration time, and fluid usage (all p ≤ 0.007). However, there was no significant difference in total surgical time (p = 0.115). At postoperative month 1, the endothelial cell density was significantly greater in the Intrepid Balanced group than in the Kelman group (2075.52 ± 346.24 vs. 1929.96 ± 317.29 cells/mm2, p = 0.008). Endothelial cell loss (360.20 ± 207.25 vs. 500.22 ± 271.90 cells/mm2) and the percentage of endothelial cell loss (14.94 ± 8.64% vs. 20.37 ± 10.31%) were significantly lower in the Intrepid Balanced group (both p < 0.001). In torsional phacoemulsification for hard cataracts, the 45° Intrepid Balanced phaco tip was associated with greater intraoperative efficiency and less endothelial damage than the 45° Kelman phaco tip. These findings suggest that the Intrepid Balanced tip may offer advantages in terms of intraoperative efficiency and endothelial preservation under the surgical settings used in this study.

The performance of organic mixed ionic-electronic conductors (OMIECs) for applications spanning bioelectronics, energy storage, and neuromorphic computing relies on careful optimization of both polymer and electrolyte properties. While most prior studies have focused on tuning polymer chemical structure, electrolyte chemistry remains an important yet underexplored factor governing electrochemical doping of OMIECs, influencing doping kinetics, stability, and electronic mobility. To investigate the relationships between anion identity and OMIEC performance, we performed spectroelectrochemistry measurements with 94 sulfonate anions using a custom-built robotic high-throughput spectroelectrochemistry (HT-SEC) platform. Leveraging this robust experimental data set, we built regression models that correlate OMIEC performance metrics with key molecular descriptors. We find that the extent of electrochemical doping correlates with several molecular features, including the anion's highest occupied molecular orbital (HOMO), as well as its dipole moment, size, and propensity for intramolecular hydrogen bonding. Guided by these insights, our model identifies three sulfonate anions that enable OMIEC doping at substantially lower voltages than Cl-, yielding significantly enhanced volumetric capacitance (C*) in organic electrochemical transistors (OECTs). Together, this work establishes electrolyte design as a powerful and general lever for controlling electrochemical doping in OMIECs, transforming ion chemistry from a passive component into an active design parameter for next-generation OMIEC-based devices.

Recent advancements in AI and ML algorithms demand high-density and low-power devices. The Tunnel Field-Effect Transistor (TFET) presents a viable strategy for digital systems with reduced power consumption. The overall performance of digital circuits that use TFETs is deteriorated by the substantial P-I-N forward leakage currents that these devices encounter when exposed to large negative drain-to-source voltages. Therefore, using 2-D simulations, we discuss in detail the nature of P-I-N forward leakage current dependency on the negative drain voltages. In addition, we have analyzed how basic device design parameters affect the P-I-N forward leakage current. Furthermore, a novel TFET structure having an additional electrode has been proposed to mitigate the P-I-N forward leakage current. The suggested architecture is an attractive substitute for conventional TFETs since it substantially decreases ambipolar current by three orders of magnitude and forward leakage current by ten orders of magnitude.

Therapeutic hyperthermia is typically applied using radiative or capacitive heating devices. Capacitive heating applies electrode pairs positioned on the patient to increase the tumor temperature and is considered auser-friendly method for relatively easy application of hyperthermia to both superficial and deep-seated tumor sites. However, this heating technique also has some limitations that are mainly inherent to the physics of capacitively induced heating. This review provides an overview of the principles of capacitive heating devices and the factors influencing the power absorption and resulting temperature distribution in the patient. Device parameters that strongly influence the achieved temperature distribution include the electrode sizes, the water bolus temperature for skin cooling, the cooling medium, and the output power. These parameters vary in commercially available devices. Complete characterizations of most of the commercially available capacitive devices are still lacking. Sparse phantom measurements in the literature characterizing capacitive devices indicate that therapeutic heating is at least possible for superficial tumors and tumors at intermediate depth. The dominant E‑field orientation with capacitive heating induces preferential subcutaneous fat heating, which limits deep heating and makes it most effective for slender patients (i.e., fat layer thickness < 1.5-2 cm). Numerical simulations have been helpful in optimizing device design, particularly in terms of bolus cooling, and are increasingly used for patient-specific treatment planning. Based on the physical characteristics and present literature, it can be concluded that appropriate patient selection is important to ensure effective and responsible use of capacitive heating devices.

Device property and parameter trade-off study for a photonic spin register based on magnetic tunnel junctions for high-speed link applications

The influence of bias on the total dose effect in carbon nanotube field-effect transistors

Vision foundation model for 3D magnetic resonance imaging segmentation, classification, and registration.

Abstract Optical cavities that provide radiative enhancement and efficient photon collection across a broad spectrum are essential for classical and quantum photonic applications. Many platforms to date have been restricted to the near-infrared (NIR) to telecom spectrum with limited cavity enhancement in the ultraviolet (UV) to NIR wavelength range. Here, we develop a silicon nitride (Si3N4) bullseye cavity platform optimized for maximal optical enhancement at UV and NIR wavelengths. By utilizing a distributed Bragg reflector designed to satisfy the first- and second-order Bragg conditions, the cavity contains guided modes at NIR and UV wavelengths, respectively. We employ finite-difference time-domain simulations to explore the full device parameter space in which our structure can be optimized for off-chip collection efficiencies exceeding 90% or Purcell factors greater than 50. Additionally, we use these two metrics to perform a global optimization where we can achieve simulated optical enhancements greater than 30 for resonances around 425 nm and 835 nm, the highest values reported to date of any optical cavity designs operating below the telecom O-band. We provide an experimental demonstration that includes a CMOS-compatible&amp;#xD;fabrication process and reflectometry measurements to characterize the cavity resonances. This platform provides a foundation for strong cavity enhancement and efficient off-chip extraction of a wide range of single-photon emitters spanning UV and NIR wavelengths.

The growing electricity demand and incorporation of the distributed energy resources have increased the burden of operations in the radial distribution networks. The instabilities in voltages and high power losses. The proposed study is based on a coordinated multi-objective optimization model to constrain the on-load tap changers (OLTCs) and shunt capacitor banks in parallel to optimize the voltage regulation and reduce system losses. IEEE 33-bus radial distribution system is taken as a standard and two sophisticated metaheuristic methods Genetic Algorithm (GA) and Particle Swarm Optimization (PSO) are applied to find optimal locations, sizes, and operating parameters of devices under the conventional voltage limitations (0.95 -1.05 p.u.).With base conditions, the system is characterized by a high level of performance degradation as 21 buses are exceeding the voltage limits with a minimum voltage of 0.9131 p.u. as well as by 202.7 kW of active and 135.1 kVAr of reactive power losses, respectively. The synchronized optimization plan is effective in reestablishing all bus voltages within allowable limits as well as minimizing active and reactive losses to 130.7 kW and 93.3 kVAr. Comparative analysis shows that coordinated control performs far better than individual deployment of OLTCs or capacitor banks showing better convergence behavior and near global optimum solutions. The results substantiate the claim that the smartness of voltage regulation equipment application with the evolutionary and swarm intelligence methods can deliver a practical, scalable, and computationally economic technique concerning a higher voltage stability, lesser technical losses, and greater dependability of the operational characteristics of contemporary distributions.

Beta-phase gallium oxide (β-Ga2O3) is a promising ultra-wide-bandgap (UWBG) semiconductor for next-generation high-power electronics. A critical challenge for commercialization is validating the material quality and uniformity of large-area substrates. In this work, the material quality of a 2-in. unintentionally doped (UID) β-Ga2O3 substrate grown by the vertical Bridgman method is evaluated by analyzing the performance uniformity of metal-oxide-semiconductor field-effect transistors as test structures fabricated on a Si-doped channel layer grown by metal-organic chemical vapor deposition. The high quality and homogeneity of the substrate material was confirmed by the uniform statistical distribution of device parameters across the wafer. Fabricated devices exhibited standard deviations of just 7.32 mA/mm for maximum current density, 3.92 V threshold voltage, and 0.88 mS/mm for peak transconductance, indicating a highly uniform epitaxial layer and channel. Mitigation of the silicon (Si) peak at the substrate-epitaxy interface was highly effective, removing the peak in 99% of devices that were tested via capacitance-voltage testing. The high yield and consistent electrical characteristics validate that the vertical Bridgman substrate technology produces a mature and uniform material platform suitable for scaling up β-Ga2O3 power electronics.

Abstract This work presents, for the first time, surface potential based analytical models for charge density and drain current of an asymmetric β-Ga2O3 nanomembrane (NM) MOSFET on SiO2/Si substrate. Individual mode specific physics-based analytical models have been developed for surface potential, charge density and drain current and the developed models are combined using mathematical transition functions to accurately capture device behavior for the entire range of device operation from accumulation to full depletion. Access regions of the MOSFET are modeled as current-dependent nonlinear resistors to capture the impact of access region depletion on its resistance. In addition to these, impact of mobility degradation under the influence of electric field, device temperature rise etc. has also been effectively taken care of in the developed drain current model. All the developed models are extensively validated using both experimental data and simulation results obtained from a carefully calibrated TCAD simulator, covering a wide range of device parameters and bias conditions. Furthermore, the proposed models successfully pass the Gummel symmetry test. Owing to their generic nature, the developed models are also applicable to other thin-channel asymmetric MOSFETs on various insulator/semiconductor substrates, enabling accurate prediction of their electrical characteristics.

Wide-bandgap (WBG) semiconductors are propelling a paradigm shift in advanced power electronics, offering functionality that includes higher-switching-frequency operation with improved efficiency and power density possibilities. Gallium nitride (GaN) exhibits unique material properties that correspond to device parameters beneficial for achieving an improved performance compared to its counterparts. The inception of GaN power semiconductor devices has enabled advanced power electronics to realize efficient and compact power converters. However, the current rating of the devices is constrained, and paralleling of the devices is vital to realize high-currentrated power modules. Furthermore, paralleling of the devices can provide improved cooling results in high-power-density systems. This paper presents a comprehensive review study of the paralleling of GaN devices to discuss the different challenges associated with paralleling. One of the fundamental challenges is associated with the design of a structure for paralleling GaN devices. The parallel device structure consequently impacts the parasitics of the device, which limit the operating switching frequency and thermo-mechanical aspects. Furthermore, power loop inductance, gate loop inductance asymmetry, common-source inductance, gate inductance trace length mismatch, and different challenges lead to design trade-offs and efforts to optimize the design by realizing an appropriate trade-off, considering low-inductance packaging along with thermal strategies, and considering a parallel circuit layout and structure. Considering the recent research trends and studies related to the design of parallel GaN devices, this paper presents future perspectives anticipating the realization of an improved parallel GaN device structure.

Background and Objectives: Knee osteoarthritis (KOA) is a major cause of global disability. The efficacy of a non-invasive treatment, pulsed electromagnetic field (PEMF) therapy, remains debated. This systematic review and meta-analysis evaluate PEMF's effectiveness on KOA, exploring the influence of device parameters. Materials and Methods: We systematically searched PubMed, Embase, and the Cochrane Library for randomized controlled trials (RCTs) from 2015 to 2025. Nine RCTs with a total of 457 patients were included. Primary outcomes were pain (Visual Analog Scale-VAS) and function (Western Ontario and McMaster Universities Osteoarthritis Index-WOMAC). Data were pooled using a random-effects model with subgroup analyses based on PEMF amplitude and frequency. Results: No significant improvement in VAS pain or total WOMAC scores was found at one month. However, time-dependent effects were observed. WOMAC-pain improved significantly at 18-21 days (MD = -1.63, 95% CI: -2.43 to -0.82, I2 = 28%) but not at one month. Conversely, WOMAC-stiffness (MD = -1.11, 95% CI: -1.386 to -0.85, I2 = 0%) and daily activity (MD = -3.39, 95% CI: -4.81 to -1.97, I2 = 0%) improved significantly only at the one-month. Objective functional measures did not improve, and the overall risk of bias across studies was high. The efficacy of PEMF is also influenced by the amplitude and frequency. Conclusions: PEMF efficacy for KOA is nuanced, with benefits dependent on timing and device parameters. High frequency gives fast pain relief; high amplitude builds function. Though statistically significant, these improvements may not reach thresholds for clinical meaningfulness. Significant heterogeneity in treatment protocols is a major barrier to clear conclusions. Standardized, large-scale RCTs are needed to determine optimal parameters and confirm PEMF's clinical role.

Current status of powered intracapsular tonsillectomy and adenoidectomy: A minimally invasive paradigm for pediatric obstructive sleep apnea surgery.

ABSTRACT Background Hybrid resurfacing lasers have emerged as a novel modality to deliver ablative and non‐ablative emissions simultaneously with reduced downtime and improved tolerability compared to traditional single‐wavelength technologies. Despite increasing clinical use, their efficacy and safety has not been comprehensively reviewed. Objectives To evaluate published clinical evidence on hybrid fractional laser systems combining ablative and non‐ablative wavelengths for dermatological applications. Methods A systematic search of PubMed was performed for English‐language clinical studies published from 1992 to 2025 assessing hybrid fractional ablative/non‐ablative lasers for cutaneous applications. Eligible study types included clinical trials, prospective or retrospective observational studies. Exclusion criteria included use of adjunctive procedures, non‐cutaneous treatment areas, preclinical studies, conference abstracts, case reports, and small case series (&lt; 10 patients). Data was extracted on study design, device parameters, clinical outcomes, adverse events and patient satisfaction. Results Ten studies ( n = 344 patients; Fitzpatrick skin types I‐V) met inclusion criteria. Six studies addressed photoaging and four studies treated acne, traumatic, surgical or striae distensae scars. All studies demonstrated clinical improvements across validated aesthetic scales. Mean downtime was &lt; 7 days in nearly all cohorts. The overall adverse event rate was 7.9% (23/291), predominantly transient post‐inflammatory hyperpigmentation. Patient satisfaction was consistently high and hybrid treatments were preferred over fractional ablative‐only resurfacing in comparative studies due to reduced discomfort, faster recovery, and similar or superior outcomes. Conclusions Current evidence supports hybrid fractional lasers as effective and well‐tolerated treatments for photoaging and scarring. Larger controlled trials with standardized parameters are needed to refine treatment algorithms and optimize ablative‐to‐non‐ablative emission ratios.

Abstract In this study, a fully inorganic, lead-free Perovskite solar cell (PSC) architecture employing Ba 3 SbI 3 has been proposed using both simulation and a machine learning approach. A detailed multi-variable charge transport layers are analyzed, and it reveals that the TiO 2 -CuSbS 2 pair offers a balanced optimal choice as the electron and hole transport layers respectively. A thorough numerical assessment has been performed to investigate the device parameters, including the thickness of different layers, doping concentration and defect levels to obtain the optimum device performance. From our proposed Lead-free Al/FTO/TiO 2 /Ba 3 SbI 3 /CuSbS 2 /Au solar cell model, a power conversion efficiency of 32.91%was obtained with an open-circuit voltage of 1.18 V, a short-circuit current density of 32.16 mA/cm² and a fill factor of 86.38%. In addition, a Random Forest Regression (RFR) model has been incorporated to predict photovoltaic performance and to estimate the relative impact of critical device parameters, which significantly influence the device performance. Our proposed RFR model achieved impressive predictive accuracy (R² &gt; 0.92) across all output parameters. Correlation matrix analysis supports these findings and offers a data-driven pathway for further optimization. This combined simulation and machine learning approach certainly exhibits a valuable insight for advancing efficient, lead-free PSCs for promoting environmentally friendly and sustainable energy solutions in the near future.

The role of switching transients has become increasingly critical in power electronic systems, particularly with the growing adoption of wide-band-gap devices such as silicon carbide (SiC) metal-oxide-semiconductor field-effect transistors (MOSFETs). This evolution necessitates the coupled simulation of nanosecond- to microsecond-scale device-level transients alongside millisecond- to second-scale system-level behaviors. This paper proposes a multi-timescale coupled simulation framework for power electronic systems that eliminates additional system dimensions and stiffness introduced by the parasitic parameters of SiC devices, thereby resolving convergence issues and enabling high simulation speed. A piecewise analytical switching transient model is developed to provide closed-form expressions for the proposed framework. A double-pulse test (DPT) platform is constructed to validate the accuracy of the model across various SiC devices, gate drive configurations, and load conditions. Additionally, the conductive electromagnetic interference (EMI) of a 10 kHz/170 kW inverter system is simulated as a case study to demonstrate the proposed approach's ability to support the coupled simulation of device-level dynamics and system-level operation in power electronic systems.