Design Of Matching Networks Research Articles

An enhanced broadband class-J mode power amplifier for 5G smart meter applications.

Background: With the tremendous increase in the usage of smart meters for industrial/ household purposes, their implementation is considered a crucial challenge in the Internet of Things (IoT) world, leading to a demand for emerging 5G technology. In addition, a large amount of data has to be communicated by smart meters efficiently, which needs a significant enhancement in bandwidth. The power amplifier (PA) plays a major role in deciding the efficiency and bandwidth of the entire communication system. Among the various modes of PAs, a newly developed Class-J mode PA has been proven to achieve high efficiency over a wide bandwidth by maintaining linearity. Methods: This paper proposes a Class-J mode PA design methodology using a CGH40010F-GaN device that operates at a 3.5 GHz frequency to meet the requirements of 5G wireless communication technology for the replacement of existing 4G/LTE technology used for advanced metering infrastructure (AMI) in smart grids. This research's main objective is to design the proper matching networks (M.Ns) to achieve Class-J mode operation that satisfies the bandwidth requirements of 5G smart grid applications. With the target impedances obtained using the load-pull simulation, lumped element matching networks are analyzed and designed in 3 ways using the ADS EDA tool. Results: The simulation results reveal that the proposed Class-J PA provides a maximum drain efficiency (D.E) of 82%, power added efficiency (PAE) of 67% with 13 dB small-signal gain at 3.5 GHz, and output power of 40 dBm (41.4 dBm peak) with a power gain of approximately 7 dB over a bandwidth of approximately 400 MHz with a 28 V power supply into a 50 Ω load. Conclusion: The efficiency and bandwidth of the proposed Class-J PA can be enhanced further by fine-tuning the matching network design to make it more suitable for 5G smart meter/grid applications.

Design and Implementation of a Printed Circuit Model for a Wideband Circularly Polarized Bow-Tie Antenna

A crossed bow-tie antenna design for S- and C-Band (2.44–7.62 GHz) with a peak gain of 7.29 dBi is presented to achieve wideband radiation efficiency greater than 90% and circular polarization with a single feed point. The polarization of the antenna is modeled by the input admittance of crossed bow-ties, and the model predictions are validated by experiments. A wideband matching network is designed to be tightly integrated with the antenna and produce a 103% impedance bandwidth. The matching network is decomposed into an equivalent circuit model, and an analysis is presented to demonstrate the principles of the matching network design. A prototype of the optimized antenna design is fabricated and measured to validate the analysis.

Design and optimization of spoof surface plasmon polaritons based multi-octave power amplifier using PSO algorithm

In this article, we explore how spoof surface plasmon polaritons (SSPP) theory can be applied to the design of active radio frequency (RF) power amplifiers (PAs). This work utilizes SSPP structures for the design of both input and output matching networks for a multi-octave PA. In order to perform proper impedance matching, the properties of SSPP unit structures are presented and analyzed. A description of the performance of the initial PA has been provided and discussed. Additionally, particle swarm optimization (PSO) is used to further enhance the performance of the PA circuit. In comparison with an embedded gradient method in a commercial tool, the PSO method results in a better optimization result. The fabricated PA is tested and the results indicate that in the frequency range of 0.5 GHz to 2.9 GHz, it achieves an output power of 40.4 dBm to 41.2 dBm, a power added efficiency of 60.5–65%, and an output gain exceeding 10 dB. Compared to recent work, the multi-octave PA in this work broadens bandwidth while maintaining high output power and PAE. To further verify the linearity of the SSPP-based PA, digital pre-distortion (DPD) is implemented. As a result of the DPD, the linearity of the SSPP PA was greatly enhanced.

Dual-Frequency Impedance Matching Network Design Using Genetic Algorithm for Power Ultrasound Transducer.

Dual-frequency ultrasounds have demonstrated significant potential in augmenting thermal ablation efficiency for tumor treatment. Ensuring proper impedance matching between the dual-frequency transducer and the power amplifier system is imperative for equipment safety. This paper introduces a novel dual-frequency impedance matching network utilizing L-shaped topology and employing a genetic algorithm to compute component values. Implementation involved an adjustable capacitor and inductor network to achieve dual-frequency matching. Subsequently, the acoustic parameters of the dual-frequency HIFU transducer were evaluated before and after matching, and the effects of ultrasound thermal ablation with and without matching were compared. The proposed dual-frequency impedance matching system effectively reduced the standing wave ratio at the two resonance points while enhancing transmission efficiency. Thermal ablation experiments with matching circuits showed improved temperature rise efficiencies at both frequencies, resulting in an expanded ablation zone. The dual-frequency impedance matching method significantly enhances the transmission efficiency of the dual-frequency ultrasound system at two operational frequencies, thereby ensuring equipment safety. It holds promising prospects for application in dual-frequency ultrasound treatment.

Analysis and Stabilization of Signal Reflections in Gate-to-Gate Connections for AQFP Circuits

Signal integrity of transmitted data is critical for achieving highly dense, large-scale superconductor circuits. Transmission line effects, such as signal reflections, are investigated and concepts from microwave circuit theory and conventional digital logic circuits are applied to AQFP circuits. The lossless transmission line model is used for interconnection modelling. The frequency content and timing characteristics of data signals are used to analytically predict a maximum propagation delay of 6.1 ps before failure due to reflections. This coincides well with our own results, and with those obtained in a separate study using simulation techniques. The investigation then extends towards the design of an impedance matching network with the aim of reducing reflections. The input impedance of a standard buffer gate is derived, and then matched to an 8 <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"><tex-math notation="LaTeX">$\Omega$</tex-math></inline-formula> transmission line. The proposed impedance matching network maintains data signal integrity up to 3 millimetres. Energy analysis of the matching network is also performed and a 36 <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"><tex-math notation="LaTeX">$\%$</tex-math></inline-formula> increase in length for similar energy consumption is achieved over alternative solutions.

A 23–29.5 GHz three‐stage mm‐wave GaN power amplifier using arbitrary two‐port complex‐impedance matching method

SummaryThis paper presents a broadband monolithic millimeter‐wave integrated circuit GaN power amplifier (PA) with arbitrary two‐port complex‐impedance matching method. The proposed matching topology has been applied to interstage matching network design by modifying traditional coupling matrix and synthesizing a desired network. The optimum load traction technique is introduced to provide some more suitable Zopts. After continuous‐wave test, the three‐stage MMIC PA achieves a peak PAE of 39.1% with a 34.9 dBm output power from 23 to 29.5 GHz and the measured S21 is 32.5 dB with a ±2.5 dB gain variation. When driven by a 400 MHz OFDM modulation signal with a PAPR of 8.5 dB, the measured ACPR is improved to −40.6/−40.7 dBc with DPD. In this case, the PA achieves an average PAE of 11.7% and a 26.7 dBm average output power.

Research and Design of RF Ion Source Impedance Matching Network

The radio frequency (RF) ion source is the key component of the neutral beam injector to achieve high power and long pulse operation. The key technology is feeding RF power from the power source to the ion source and producing stable plasma. It is impossible to calculate the exact equivalent impedance of plasma during discharge, and the impedance will change with the change in discharge pressure and feed power. In order to transfer the maximum output power of the RF power source to the coil antenna of the ion source, an impedance-matching network must be added between the power source and the ion source. Four possible matching network structures are designed by the Smith diagram circle method, and two kinds of capacitor structures are calculated and analyzed. The influence of capacitance change on impedance matching state is analyzed, and the electrical parameters of capacitance under the two structures are compared. After comparison and analysis, the structure of the parallel capacitor is first, and then the series capacitor is selected. Finally, the plasma discharge can be stable through experiments. The research on the matching network is of great significance for the development and experimental operation of the RF feeding system of the high-power RF ion source in the future

A broadband high-efficiency GaN-based power amplifier using an improved continuous mode

This paper proposes a broadband high-efficiency power amplifier using an improved continuous mode design. A tuning parameter is introduced into the current expression of the drain to purposely introduce more sine components. These sine components extend the impedance space of the traditional continuous mode, provide greater flexibility in the design of the broadband output matching network, thereby widening the operating bandwidth. Moreover, since no overlap between the current sine components and the voltage cosine components are produced, these sine components do not degrade the PA's efficiency, unlike traditional continuous-mode PAs that often trade efficiency for bandwidth. To validate our approach, a broadband high-efficiency power amplifier is designed using GaN HEMT. Measurements indicate that output power is between 40.8 dBm and 42.3 dBm, and the drain efficiency varies from 72.7%-81.8% in 1.5-2.5 GHz, while the gain is between 11.3 dB and 13.0 dB in the same frequency range.

Parasitic Capacitance Analysis of PCB-type Induction Heating Coil and LCCC/S Matching Network Design for Railway Turnouts

Parasitic Capacitance Analysis of PCB-type Induction Heating Coil and LCCC/S Matching Network Design for Railway Turnouts

Frequency-Dependent Design Spaces for Continuous Mode Class-J*/B/J PA

This work presents a theoretical analysis of the frequency dependence of the load impedance seen from the transistor’s intrinsic current source and the package plane for designing class-J*/B/J power amplifiers (PAs). The presented results are possible thanks to the new analytical expression for calculating the output current. Moreover, the proposed analysis permits the study of the relationship between the maximum output current and the frequency assuming a nonlinear output capacitance; the information allows designers to evaluate the capability of the transistor for designing class-J*/B/J PA at predetermined drain efficiency and frequency. The proposed impedance equations with load-pull data at different frequencies, help to identify a design space that makes the design of output matching networks (OMN) for broadband cases flexible. Experimental data of a designed and fabricated class-J*/B/J GaN PA for 2–3 GHz with drain efficiency and output power higher than 60% and 40 dBm, respectively, validate the theoretical results of the proposed analysis.

Cascaded Rectifiers for Energy Harvesting With a Wide Dynamic Power Range

This work presents a novel RF energy harvesting system at 2.45 GHz, operating over a wide dynamic RF range (44 dB), starting from ultra-low power. It consists of three rectification branches, each one optimized for a selected power interval, between <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$- 20\,\,\div \,\,+$ </tex-math></inline-formula> 24 dBm. Through an automatic distribution network, the incident RF power is routed to the most efficient rectification branch, with no need for external control circuits. The first branch is optimized for low-power conditions, in the range <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$- 20\,\,\div \,\,0$ </tex-math></inline-formula> dBm, and the second and third branches for 0 <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\div $ </tex-math></inline-formula> 9 dBm and <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$9~\div ~24$ </tex-math></inline-formula> dBm, respectively. For branch decoupling, an original strategy, based on the concurrent nonlinear design of power-dependent matching networks and self-powered switches, is used. To maximize each rectifier performance, Enhancement-mode High Electron Mobility transistors (HEMT) are adopted by means of the self-biasing mechanism. In this way, for any possible incoming RF power, only the most suitable rectifier path is active and the maximum RF-to-dc conversion efficiency is preserved. The system has been fabricated and tested demonstrating a conversion efficiency higher than 30% from −13 dBm to 24 dBm, with the lowest and highest measured dc output voltage of 0.1 and 13 V, respectively.

Multi-Band Power Amplifier Module with Back-Off Efficiency Improvement using Ultra-Compact 3D Vertical Stack Multi-Chip Package for Cellular Handsets.

A highly integrated multi-mode multi-band (MMMB) power amplifier module (PAM) using hybrid bulk complementary metal oxide semiconductor (CMOS), gallium arsenide (GaAs) heterojunction bipolar transistor (HBT), and silicon-on-insulator (SOI) technologies for low band (LB, 824-915 MHz) and high band (HB, 1710-1980 MHz) is proposed. The hybrid MMMB PAM integrates a bulk CMOS controller die, a GaAs HBT power amplifier (PA) die and a SOI switch die on a six-layer laminate. To simultaneously obtain both highly efficient and highly linear characteristics over a wide range of input power levels, a parallel dual-chain PA strategy has been adopted to provide vary bias current and gain for low-power mode (LPM) and high-power mode (HPM) operation. Additionally, a broadband two-section low-pass output matching network design based on the suppression of high-order harmonics is proposed for enhanced efficiency and linearity. In order to achieve further miniaturization, a three-dimensional (3D) die stack multi-chip module (MCM) packaging structure, where the presented CMOS controller die is stacked vertically on the GaAs HBT PA die, is implemented. The measurement results show that the fabricated MMMB PAM achieves 26.1-27 dB of power gains and 38-38.4% of PAEs at an output power (Pout) of 28 dBm in the HPM, and 20.4-20.9 dB of power gains and 12.4-13.8% of PAEs at Pout of 17 dBm in the LPM over LB. For HB, power gains of 24.3-26.7 dB while maintaining PAEs of 38.2-39.9% at Pout of 28 dBm, and power gains of 15.9-17.5 dB while maintaining PAEs of 12.3-12.8% at Pout of 17 dBm are realized in the HPM and LPM, respectively. The fabricated PAM covering five frequency bands and operating at two power modes only occupies a 5 × 3.5 mm2 area. To the best of the authors' knowledge, this work is the first demonstration of a MMMB PAM adopting an ultra-compact 3D vertical stack MCM package with favorable RF performance.

A multi‐variable double impedance matching network design algorithm with design example of a low noise amplifier

In this article, we propose a matching network design algorithm based on the segmentation of the real and imaginary part of optimum source impedance curve with respect to space variable x $$ x $$ and frequency ω $$ \omega $$ , respectively. The impedance curve (comprising of real and imaginary parts) is approximated as a collection of n $$ n $$ linear segments, represented by the weighted sum of n $$ n $$ semi-infinite linear functions. Using the numerical method, optimum weight vectors that maximize transducer power gain are obtained to model the real and imaginary parts of the source impedance curve. We get the values of optimum weight vectors and the rational input impedance function for the matching network, which are then synthesized in the desired topology by a continued partial fraction. Experimentally, we validate the novelty of the proposed method by designing matching networks of a wideband custom monolithic microwave integrated circuit (MMIC) low noise amplifier (LNA) in 1.3–2.3 GHz frequency band. The measured results of the designed LNA are significantly close to the simulated results. We bias our LNA at (5 V, 150 mA) and achieve a maximum noise figure of 1.25 dB, OP1dB of 26 dBm, and an average TOI of 38 dBm. Moreover, our design of custom LNA MMIC has an integrated ESD structure while occupying only 0.32 mm2 of chip area.

Application of harmonic included CPL‐QPHD model of GaN device for broadband PA design

In this work, a harmonic included canonical piecewise linear (CPL) function based quadratic poly-harmonic distortion (QPHD) model is presented. The proposed model employs the framework of the standard QPHD model, making use of the CPL functions for interpolation of the amplitude of the dominant input signal. Compared with the standard QPHD model, the model described in this work is able to predict transistor behavior at different levels of input powers with one single set of model coefficients. The harmonic information has also been added in this model to make it more complete. The model is validated in terms of both DC and RF behavior through simulated data of a 10 W gallium nitride (GaN) high-electron-mobility transistor (HEMT) over a wide range of load conditions and power levels. In addition, the model is implemented in advanced design system (ADS) with frequency-defined device (FDD), and applied for a broadband power amplifier (PA) design. Chebyshev low-pass topology is used for both input and output matching network design. Finally, a broadband PA is implemented with an average power added efficiency of 66.23%, an average power of 41.09 dBm, and an average gain of 13.09 dB across the operating frequency range from 0.6 to 1.7 GHz. The simulation results of the harmonic included CPL-QPHD model are highly matched with the measurement results of the designed PA, demonstrating the feasibility of applying the proposed model for broadband PA design.

Explicit Design of Impedance Matching Networks for Robust MHz WPT Systems With Different Features

This article develops explicit design of an impedance matching network (IMN) to enhance the robustness of megahertz (MHz) wireless power transfer (WPT) systems against variations in their final load and coil coupling. Unlike the existing trial-and-error-based solutions, analytical derivations are conducted to calculate the parameters of a two-port T- or <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"><tex-math notation="LaTeX">$\bf \Pi$</tex-math></inline-formula> -IMN. The load-pull technique is first applied to determine a target impedance ray that represents a desired loading condition of the power amplifier. Based on the analytical derivations, the three degrees of the design freedom of the IMN are then fully utilized to accurately match the starting point and direction of the target impedance ray. Different features of a final MHz WPT system, such as load-independent output voltage and high tolerance to coil misalignment, are further achieved by having different target impedance rays. Performance enhancement of an experimental 6.78-MHz WPT system is investigated under largely varied final load (10–50 <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"><tex-math notation="LaTeX">$\mathbf{\Omega }$</tex-math></inline-formula> ) and coil coupling (0–53%). With an explicitly designed IMN, the maximum efficiency drops are reduced from 18% to 6% under the changing final load and 21% to 3.9% under the changing coil coupling (0–40%), respectively. An actual application of wireless drone charging is also included to demonstrate the practicability of the proposed IMN design

An Extensive Large Signal Equivalent Circuit Model of GaAs-PIN Photodiode

Based on the variation trend of the depletion layer of GaAs-PIN photodiode (PD) under different optical power and reverse bias voltages, an extensive large-signal equivalent circuit model that characterizes PD in non-punch-through and punch-through states is proposed in this article. According to the analysis of the PD’s depletion layer variation, the nonlinear parameters of the model are described by exponential function and Gaussian function. To verify the reliability of equivalent circuit model, on-chip measurements were performed on PIN-PD fabricated by commercial GaAs process, and the measured <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${I}$ </tex-math></inline-formula> - <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${V}$ </tex-math></inline-formula> and reflection coefficient agree with the proposed model simulation results well. Furthermore, using the proposed model for simulation with CAD tools shows that reducing junction capacitance has potential in improving PD output power and gain flatness. At the same time, the model provides a certain reference for selecting bias condition in the design of the PD matching network and fabricating PD with high power output.

Optimization design of fragment-type filtering matching network for continuous inverse class-F power amplifier

Optimization design of fragment-type filtering matching network for continuous inverse class-F power amplifier

Matching network design for input impedance optimization of four-coil magnetic resonance coupling wireless power transfer systems

Matching network design for input impedance optimization of four-coil magnetic resonance coupling wireless power transfer systems

Design of impedance matching network based on optimized real frequency algorithm

In the recent couple of decades, some multifunctional spaceborne active radars had been launched. Those radars used to be broadband radars using dipole transmitting antennas. The odd-order resonant frequency of the antenna does not completely cover the operating frequency of the entire radar, so this may cause the antenna's radiation efficiency to deteriorate. The typical method to solve this problem was to design an impedance matching network system for broadband antennas to achieve a good voltage standing wave ratio and transmit power gain. In this paper, a new optimized real-frequency method was designed, and a 0.4-meter dipole antenna was tested before and after impedance matching. The measured results showed that the impedance matching network obtained by the optimized real-frequency method proposed in this paper can improve the antenna radiation efficiency, and can effectively reduce the standing wave ratio to avoid damage to the transmitter caused by high echo power.

Numerical Design of RF Antennas for Ion Cyclotron Resonance Heating in ECRIS Environment

In this paper we present the numerical design and simulation of RF antennas to be employed in Ion Cyclotron Resonance Heating (ICRH) systems working in ECRIS environment. A 3D full-wave numerical model, based on the coupling between COMSOL FEM solution of Maxwell equations and the MATLAB-computed non-homogeneous plasma dielectric tensor, has been employed in order to study the performances of several ICRH antennas. Results in terms of S-parameters, on-axis electric field and RF absorbed power inside the plasma chamber have been obtained and compared between the chosen antenna geometries. The presented study will permit to better understand the fundamental aspects of ion dynamics in ECRISs as well as allowing the design of a proper matching network between the RF amplifier and the antenna, necessary to cope with the plasma properties’ fast variations. Further ion kinetic simulations are ongoing.