Film Deposition Research Articles

Layer-by-layer growth, apparent instability, and mound coarsening in thin film deposition controlled by thermally activated surface diffusion

Thin film deposition from vapor with adsorbate diffusion and Ehrlich-Schwoebel (ES) barriers at step edges is studied by kinetic Monte Carlo (KMC) simulations and scaling approaches. Mound coarsening with slope selection is shown at the largest thicknesses, where roughness (W) and correlation length (ξ) scale in time with exponents β≈n≈0.25, consistently with theoretical works but contrasting with previous simulations that systematically showed temperature-dependent exponents. At a given film thickness, we show that the mounded morphology is independent of the ES barrier, so that interlayer transport is suppressed, while the temperature increase of W and ξ is consistent with intralayer transport limited by adatom detachment from flat terrace borders. Initial layer-by-layer (LBL) growth occurs above a characteristic temperature that increases with the activation energies of terrace diffusion and of ES barrier, but weakly depends on the external flux. Subsequently, as the surface roughness is near the atom/molecule size, there is rapid roughening where, counterintuitively, larger effective growth exponents (β>0.5, suggesting unstable growth) are correlated with longer LBL regimes. Similar LBL-rough transitions were reported in organic film deposition and the model application to diindenoperylene films suggests a large ES barrier ∼0.4eV. In the mound coarsening regime, W/ξ and θ1/2/Wξ converge to constant values dependent on surface diffusion coefficients (θ is the film thickness). This convergence suggests mound coarsening with slope selection in SnTe films whose effective β is anomalously large, showing how film morphology can be interpreted beyond exponent measurements.

Structural Characteristics and Photocatalytic activity of TiO2/Si3N4 nanocomposite synthesized via plasma sputtering technique

This work evaluates a new TiO2/Si3N4 catalyst that was prepared by deposition of thin films of Si3N4 and TiO2 nanostructures on glass using lab made closed field unbalanced dc reactive magnetron sputtering technique. A highly-pure silicon sheet and titanium sheet were used as a sputtering target and gas mixture of (Ar: N2), (Ar∶O2) with mixing ratios of (50:50) for each were used to prepare TiO2/Si3N4 sample, respectively. This sample has been heat treatment. The structure and morphology of the catalyst were determined by X-ray diffraction, Field-Emission Scanning Electron Microscopy (FE-SEM), Energy Dispersive X-ray (EDX) Spectroscopy, and Fourier transform infrared (FTIR) spectroscopy tests. The resultant nanocomposite sample was polycrystalline and there were no impurities in the investigated nanocomposite as revealed by XRD analysis. The absorption edge was found to be at 420 nm, as revealed by d UV-visible spectroscopy. The results obtained from the photodegradation of organic pollutants under a Xenon lamp indicate that TiO2/Si3N4 nanocomposite's photocatalytic activity is significantly more effective than TiO2 nanophotocatalyst.

Dynamics of deposition and removal of a fluorocarbon film in the cyclic process of plasma-chemical etching of silicon

In situ measurements of the dynamics of deposition and etching of a fluorocarbon film (FCF) during cyclic plasma-chemical etching of silicon using a laser interferometer have been carried out. Direct measurements of the deposition and etch rates, as well as the etch time of the FCF, open up new possibilities for optimizing the cycle procedure. For example, adjusting the etching time of the FCF improves the selectivity of the etching process.

Sustainable Green Solvents for Lead Halide Perovskites

AbstractLead halide perovskites have revolutionized the field of optoelectronics and attracted worldwide attention due to their outstanding semiconducting characteristics. Meanwhile, solution processability and printability of the perovskite allow the commercialization of perovskite solar cells (PSCs) profitable. However, deposition of the perovskite films usually uses polar aprotic solvents. The popular antisolvents are aromatics or aromatic halogenated hydrocarbons. All of them have a high risk of toxicity and flammability. To reduce the adverse effects on the environment and operators and enhance the sustainability of perovskite technologies, researchers have made lots of efforts to study sustainable green solvents. Herein, the selection criteria of green solvents are surveyed. Methods of solubility prediction of precursor solvents are comprehensively discussed from the perspectives of polarity and Lewis acid–base chemistry. The significance of antisolvent polarity and boiling point is emphasized. Research advances in green solvents are summarized. Finally, this review presents in‐depth insights into green‐solvent‐processable perovskites and highlights research directions for perovskite modules in the future. It lays a good foundation for the commercialization and sustainable development of PSCs.

Diamond-coated quartz crystal microbalance sensors: Challenges in high yield production and enhanced detection of ethanol and sars-cov-2 proteins

This study presents the technological progress in the deposition of diamond thin films on quartz crystal microbalance (QCM) sensors. The linear antenna microwave plasma chemical vapour deposition (CVD) technique effectively grows thin diamond films on QCM substrates (Dia-QCM) differently oriented on the substrate holder in the deposition chamber, resulting in single-sided and double-sided coated QCMs. Each of these coated QCMs offers a distinctive advantage for sensing applications. The double-sided coated QCM sensors exhibited the most effective performance in ethanol detection, demonstrating approx. a 3-fold and 12-fold higher response than single-sided diamond-coated and bare gold QCM sensors, respectively. Furthermore, the single-sided Dia-QCM aptasensors demonstrated superior performance compared to bare gold QCM sensors, with a 2-fold higher response and a lower detection limit for S-RBD protein (LODDia-QCM = 0.09pg/mL vs. LODAu-QCM = 0.10pg/mL). In experiments conducted in human plasma, the Dia-QCM aptasensor demonstrated the ability to detect S-RBD protein at concentrations as low as 50pg/mL, with high percentage recoveries. These results highlight the potential of linear antenna microwave plasma CVD for the mass production of advanced diamond-coated QCM sensors with different diamond film morphologies (porous, micro- or nanocrystalline) for various applications.

Does the substrate and a buffer layer have a greater influence on poly(3-hexylthiophene) films deposited by the chronocoulometry technique?

Abstract In this study, we investigate the interface morphology and optical properties of electrochemical poly(3-hexylthiophene) (P3HT) films deposited by electrochemical synthesis using the chronocoulometry technique on tin-doped indium oxide (ITO) and fluorine-doped tin oxide (FTO) and how the substrate used influences in the deposition of the films and their optical and morphological properties, as well as the buffer layer and the interface effect, with and without spin-coating films of poly(3,4-ethylenedioxythiophene)-poly(styrenesulfonate) (PEDOT:PSS). P3HT polymeric films were synthesized and deposited via the oxidation of the 3-hexylthiophene (3-HT) monomer and characterized via Raman spectroscopy. The morphology and thickness of the P3HT layer present in the samples ITO/P3HT, FTO/P3HT, ITO/PEDOT:PSS/P3HT, and FTO/PEDOT:PSS/P3HT were carried out using atomic force microscopy (AFM). The optical and electronic gap energy of P3HT were calculated from UV‒Vis spectra and cyclic voltammetry curves, respectively. The photoluminescence (PL) spectra showed broad and asymmetrical line shapes fitted by multi-Gaussian functions identifying different emission species. Emission ellipsometry spectroscopy was performed to study the energy transference between adjacent polymer chains. Our results show a higher linear polarized light emitted by ITO/PEDOT:PSS/P3HT film, ∼37%, thus demonstrating a significant decrease in the energy transfer. Based on these results, the efficiency of organic solar cells can be improved via the interaction of the polymer/polymer interface.

Exploring Sb2S3 as a hole transport layer for GeSe based solar cell: a numerical simulation

Abstract Germanium selenide (GeSe) and antimony sulfide (Sb2S3) both are technological intriguing semiconductor material for green and economical photovoltaic devices. In this study, GeSe and Sb2S3 have been utilized as the absorber layer and hole transport layer, respectively, to constructed a heterojunction thin film solar cell consisting of FTO/TiO2/GeSe/Sb2S3/Metal. The GeSe and Sb2S3 are binary compounds and can adopt the same film deposition method, for instance, thermal evaporation, which is expected to improve process compatibility and to reduce production costs. The TiO2 (electron transport layer) and Sb2S3 can form small spike-like conduction band offset and valence band offset with the GeSe, respectively, which possesses potential to suppress carrier recombination at the heterointerfaces. Subsequently, the effects of main functional layer material parameters, heterointerface characteristics and back contact metal work function on the performance parameters of the proposed solar cell were simulated and analyzed using wxAMPS software. After numerical simulation and optimization, the proposed solar cell can reach an open circuit voltage of 0.872 V, a short circuit current of 40.72 mA·cm−2, a filling factor of 84.16%, and a conversion efficiency of 28.35%. According to the simulation results, it is anticipated that the Sb2S3 can serve as a hole transport layer for GeSe based solar cell and enable device to achieve high efficiency. Simulation analysis also provides some meaningful references for the design and preparation of heterojunction thin film solar cells.

Atomic layer deposition of ultrathin nitride films for enhanced carrier lifetimes and photoluminescence in CdTe/MgCdTe double heterostructures

This work evaluates the passivation effectiveness of ultrathin nitride layers (SiNx, AlN, and TiN) deposited via atomic layer deposition on CdTe/MgCdTe double heterostructures for solar cell applications. Time-resolved photoluminescence and photoluminescence measurements revealed enhanced carrier lifetimes and reduced surface recombination, indicating improved passivation effectiveness. These results underscore the potential of SiNx as a promising passivation material to improve the efficiency of CdTe solar cells.

Ion-induced surface reactions and deposition from Pt(CO)2Cl2 and Pt(CO)2Br2.

Ion beam-induced deposition (IBID) using Pt(CO)2Cl2 and Pt(CO)2Br2 as precursors has been studied with ultrahigh-vacuum (UHV) surface science techniques to provide insights into the elementary reaction steps involved in deposition, complemented by analysis of deposits formed under steady-state conditions. X-ray photoelectron spectroscopy (XPS) and mass spectrometry data from monolayer thick films of Pt(CO)2Cl2 and Pt(CO)2Br2 exposed to 3 keV Ar+, He+, and H2 + ions indicate that deposition is initiated by the desorption of both CO ligands, a process ascribed to momentum transfer from the incident ion to adsorbed precursor molecules. This precursor decomposition step is accompanied by a decrease in the oxidation state of the Pt(II) atoms and, in IBID, represents the elementary reaction step that converts the molecular precursor into an involatile PtX2 species. Upon further ion irradiation these PtCl2 or PtBr2 species experience ion-induced sputtering. The difference between halogen and Pt sputter rates leads to a critical ion dose at which only Pt remains in the film. A comparison of the different ion/precursor combinations studied revealed that this sequence of elementary reaction steps is invariant, although the rates of CO desorption and subsequent physical sputtering were greatest for the heaviest (Ar+) ions. The ability of IBID to produce pure Pt films was confirmed by AES and XPS analysis of thin film deposits created by Ar+/Pt(CO)2Cl2, demonstrating the ability of data acquired from fundamental UHV surface science studies to provide insights that can be used to better understand the interactions between ions and precursors during IBID from inorganic precursors.

Reservoir Computing System with Diverse Input Patterns in HfAlO-Based Ferroelectric Memristor.

Ferroelectric memristors, particularly those based on hafnia, are gaining attention as potential candidates for neuromorphic computing. These devices offer advantages over perovskite-based ferroelectric memristors owing to their simpler structures, compatibility with complementary metal-oxide semiconductor technology, and low-power consumption characteristics. Additionally, improvements in ferroelectric memristor's performance, such as enhancing tunneling electro resistance (TER) and polarization retention, can be achieved using methods like aluminum doping and insulating film deposition. In this study, we implement a physical reservoir computing (RC) system utilizing the metal-ferroelectric-insulator-semiconductor-structured ferroelectric memristor based on Al-doped HfO2 as an artificial synapse. Specifically, we ensure the universality and diversity of the system by experimentally demonstrating a robust reservoir layer capable of handling various types of input pulses. To utilize the ferroelectric memristor in the reservoir layer of the RC system, we employ partial polarization switching of ferroelectric materials. We measure the retention loss characteristics of the device for pulse amplitude, interval, and width, and quantify the time constant values by fitting them to a stretched exponential function. Additionally, we validate the suitability of the fabricated device as an artificial synapse by mimicking various short-term plasticity functions of biological synapses. Furthermore, we experimentally demonstrate various applications related to learning and memory of the brain, such as image training and Pavlov's experiment, utilizing the short-term memory characteristics of the fabricated device. Lastly, we evaluate the robustness of the RC system under various input conditions by employing the fabricated device as a reservoir layer.

Polarization-insensitive bifocal metalenses by combining nanoimprint lithography and atomic layer deposition in the visible spectrum

Multifocal lenses are essential components for microscopy, spectroscopic detection, and optical trapping. Benefiting from the unprecedented capability of metasurfaces in light control, metalenses are able to provide multi-foci functionality with a more compact footprint, making them attractive alternatives to traditional bulky lenses. However, current manufacturing techniques encounter some challenges, including low throughput, high cost, and limited patterning areas. Here, we demonstrate the wafer-scale, low-cost, and high-throughput production of polarization-insensitive bifocal metalenses at a wavelength of 450 nm by combining nanoimprint lithography and atomic layer deposition. The nanoimprint process is simplified by using the imprinted resin itself as meta-atoms, which exhibit high aspect ratios (∼10:1) and small critical dimensions (∼90 nm). The effective refractive index of the meta-atoms is increased through atomic layer deposition of the high-index TiO2 film, providing 0–1.5π sufficient phase coverage. Metalenses with diameters of 480 μm are fabricated on the silica substrate, exhibiting two diffraction-limited focal spots along the optical axis. Moreover, the fabricated metalenses demonstrate the polarization-insensitive feature under various polarization states. The fabrication process presented in this Letter paves the way for large-scale and low-cost production of versatile metasurfaces operating in the visible or shorter spectrum.

Rapid Prototyping for Accelerated Establishment of Film Processing‐Performance Relationships in Silicon Phthalocyanine OFETs

AbstractUnderstanding the complex relationships underlying the performance of organic electronic devices, such as organic field‐effect transistors (OFETs), requires researchers to navigate a multi‐dimensional parameter space that includes material design, solution formulation, fabrication parameters, and device geometry. Herein, a recently developed materials acceleration platform is demonstrated, named the RoboMapper, to perform direct on‐chip fabrication of OFETs by ultrasonic meniscus printing using silicon phthalocyanine (SiPc) derivatives as the semiconductor. OFETs using bis(tri‐n‐butylsilyl oxide) SiPc ((3BS)2‐SiPc) exhibited the best device performance characterized by the highest electron field‐effect mobility (µe). Through optical microscopy and grazing‐incidence wide‐angle X‐ray scattering (GIWAXS), the favorable performance of (3BS)2‐SiPc is attributed to the specific film morphology and molecular packing achieved with optimal print conditions. Investigating the impact of deposition parameters reveals the crucial role of solvent evaporation rate and print speed in achieving high‐quality film formation. Overall, optimal fabrication conditions for (3BS)2‐SiPc devices include slow print speeds and fast evaporating solutions achieved by using a mixture of co‐solvents and an elevated substrate temperature. The results of this work reveal distinct relationships between deposition conditions, film properties, and device performance for each SiPc derivative and emphasize the necessity of high throughput experimentation to comprehensively understand process‐performance relationships in organic semiconductors.

The Effect of O2 Flow Rate on Nanostructured TiO2 Thin Films Prepared by Reactive DC Magnetron Sputtering with OAD Technique

In this project, we explored how different oxygen flow rates influenced the creation of TiO2 nanostructures in thin films using magnetron sputtering preparation with oblique angle deposition (OAD) technique. The experiment involved oxygen flow rates of 20, 40, 60, 80 and 100 sccm along with a constant argon flow at 20 sccm. Morphological analysis by FE-SEM was performed to determine film thickness and deposition rate. In a subsequent stage, thin films thickness was confirmed to be 100 nm. After coating, specimens were annealed at 300°C for 2 h using various O2 flow rates. FE-SEM revealed morphological changes, GIXRD to explore crystal structures, and UV-Vis spectrophotometry to measure light transmittance. The results showed an optimal oxygen flow rate at 60 sccm, with annealed specimens exhibiting anatase structure and promising light transmittance of 73-83%.

Effect of Mn and Si contents in steel on the natural film deposition and interfacial heat transfer behaviours during the strip casting process

ABSTRACT In this study, S1 and S2 with different Mn-Si contents and Mn/Si mass ratios are prepared for the film deposition and interfacial heat transfer experiments using the droplet solidification technique. The effect of Mn-Si contents and Mn/Si mass ratios on the film deposition and interfacial heat transfer behaviour are investigated. The results revealed that the increase of Mn content (from 0.403 wt.% to 0.621 wt.%) and Si content (from 0.145 wt.% to 0.171 wt.%) resulted in a higher film deposition rate (from 1.23μm to 1.43μm per droplet test), as evidenced by the enhancement of thickness (from 11.07 μm to 12.86 μm), particle size (from 1250 nm to 1340 nm), and surface roughness (from 2.580 μm to 3.217 μm) of the deposited film after 9 experiments. Moreover, an increase in the Mn/Si mass ratio of the sample from 2.78–3.63 leads to a corresponding enhancement (from 65.67 wt.% to 71.02 wt.%) in the MnO content within the film. As a result, the melting point (from 1319°C to 1348°C) and thermal resistance of the obtained film exhibit a gradual increase, thereby limiting the extent of improvement in interfacial contact conditions and ultimately diminishing the enhancement of interfacial heat transfer behaviour by the deposited film. Additionally, the transition point in interfacial heat transfer behaviour occurs earlier for a higher Mn and Si content and higher Mn/Si mass ratio due to a higher film deposition rate and melting point.

Completely Fused Non‐Fullerene Acceptor Enables Efficient Postprocessing‐Free Organic Photovoltaics Cells

AbstractThe photovoltaic performance of organic photovoltaic (OPV) cells can be significantly improved by regulating the aggregation structure and film formation kinetics of the constituent materials. However, many regulation strategies, including the use of additives and annealing, require complex fabrication processes and additional investments, which poses challenges for the industrialization of OPV cells. In this work, a completely fused non‐fullerene acceptor, GS‐20 is designed and synthesized, with strong aggregation properties. The incorporation of GS‐20 as a third component into the PBQx‐TF:eC9‐2Cl‐based cell accelerates aggregation of eC9‐2Cl and improves molecular stacking by promoting film deposition. The as‐cast ternary OPV cells fabricated without any post‐treatments exhibited a high VOC of 0.890 V and a maximum PCE of 19.0%. Moreover, a postprocessing‐free OPV module is fabricated using the blade coating method and obtains a satisfactory PCE of 13.5%, indicating excellent feasibility for large‐scale preparation. This work realizes an efficient postprocessing‐free OPV cell through molecular design and ternary strategy, facilitating the industrialization of OPV technology.

Two-core photonic quasicrystal fiber - surface plasmon resonance (PQF-SPR) methane sensor comprising the ZnO/Au composite film: design and FEM simulation

A photonic quasicrystal fiber - surface plasmon resonance (PQF-SPR) methane sensor made up of the eight-fold photonic quasicrystal fiber has been designed and analyzed. The PQF is used to construct the double-core D-type structure with air holes forming a hole groove on the D-type surface. The grooves are plated with ZnO and Au films successively, following the deposition of a methane-sensitive film containing Cryptophane-E. The effects of the air hole diameter, materials, and relative thickness of the composite film on the sensing properties are studied by finite element simulation. The results show that the wavelength sensitivity of the sensor with the ZnO-Au and TiO2-Au composite film with the same thickness is significantly higher than that with a single gold film coating in the methane concentration range of 0%–3.5%, confirming that the composite film enhances the SPR effect and improves the sensing properties. The ZnO-Au composite film has the best properties such as maximum and average wavelength sensitivities of 64 nm/% and 40.24 nm/%, respectively. The performance of this sensor is notably superior to that of comparable methane sensors previously documented.

Water Vapor-Impermeable AlON/HfOx Bilayer Films Deposited by Hybrid High-Power Impulse Magnetron Sputtering/Radio-Frequency Magnetron Sputtering Processes.

Water vapor-impermeable AlON/HfOx bilayer films were constructed through a hybrid high-power impulse magnetron sputtering (HiPIMS) and radio-frequency magnetron sputtering process (RFMS), applied as an encapsulation of flexible electronics such as organic photovoltaics. The deposition of monolithic and amorphous AlON films through HiPIMS was investigated by varying the duty cycles from 5% to 20%. At an accelerated test condition, 60 °C, and 90% relative humidity, a 100 nm thick monolithic AlON film prepared using a duty cycle of 20% exhibited a low water vapor transmission rate (WVTR) of 0.0903 g m-2 day-1 after testing for 336 h. Furthermore, after introducing a nanocrystalline HfOx film through RFMS, a 214 nm thick AlON/HfOx bilayer film reached the lowest WVTR of 0.0126 g m-2 day-1.

Effects of anode geometry on DC magnetron sputtering of copper oxide films deposition

Abstract Effects of anode shape are examined in a custom-made DC magnetron sputtering system. Polycrystalline copper-oxide (CuO) films are deposited using wedge, ring and disc shaped anodes. Current–voltage (I-V) characteristics of the discharge were fitted with models of plasma discharge. Above 700 V a notable rise in average plasma impedance, from approximately 2kΩ to 7kΩ was observed. Scanning electron microscope (SEM) images reveal uniform and porous film growth. The deposition increased significantly with increasing the anode surface area due to decrease in gas density in cathode sheath. For all the anode shapes tested, the deposition rates were higher in magnetron sputtering compared to DC sputtering mode. X-ray diffraction (XRD) of the films deposited with the disk anode revealed polycrystalline films with predominant CuO phase. With increasing sputtering power, average crystallite size vary from 11 nm to 21 nm, dislocation density vary from approximately 8.4×〖10〗^(-3) nm-2 to 2.3×〖10〗^(-3) nm-2 and micro strain from approximately 3.3×〖10〗^(-3) to 1.7×〖10〗^(-3). This indicate that higher sputtering at higher powers produce higher quality films. Atomic force microscopy revealed that the rms roughness of the samples is about 4 nm.

Role of the Coreactant on the Dual-Source Behavior of Lithium Hexamethyldisilazide for ALD Li-Containing Films.

Atomic layer deposition (ALD) of Li-containing thin films is deemed as highly relevant for the development of next-generation Li-ion batteries. Lithium hexamethyldisilazide (LiHMDS), as Li-containing precursor, is preferred over the widely used lithium tert-butoxide because of its lower melting point of 70 °C. However, the presence of silyl groups in the LiHMDS chemical structure can result in the undesired incorporation of Si in the film. Therefore, understanding the reaction mechanism of LiHMDS is required to control its dual-source behavior and grow Si-free Li-containing thin films. For this purpose LiHMDS was combined with O2 plasma or water as coreactant. In situ spectroscopic ellipsometry (SE) and X-ray photoelectron spectroscopy (XPS) revealed that using O2 plasma as coreactant results in linear growth and Si-containing films, whereas using H2O as coreactant leads to fast, nonsurface-reaction-limited growth and Si-free films. To shed light on the role of the coreactant on the reaction mechanism of LiHMDS, in situ studies by time-resolved quadrupole mass spectrometry (QMS) were performed on the O2 plasma and H2O-based ALD processes. Measurements taken during full ALD cycles and half-cycles were carefully compared to identify which half-cycle surface reaction products lead to silicon incorporation in the film. The QMS results of the LiHMDS + H2O process showed that LiHMDS both chemisorbs and physisorbs. Furthermore, it is concluded that Si incorporation occurs during the O2 plasma step, when the physisorbed ligands are combusted and Si-containing products are redeposited. This work also demonstrates that the incorporated Si can be abstracted from the film by means of a H2 plasma step following the O2 plasma step. These insights on the role of the coreactant in the synthesis of Li-containing films contribute to the development of LiHMDS-based ALD processes for Li-ion battery applications.

Impact of Tetrakis(dimethylamido)tin(IV) Degradation on Atomic Layer Deposition of Tin Oxide Films and Perovskite Solar Cells.

Tin oxide (SnOx) films synthesized by atomic layer deposition (ALD) are widely explored in a range of optoelectronic devices including electrochemical sensors, transistors, and photovoltaics. However, the integrity of the key ALD-SnOx precursor, namely tetrakis(dimethylamido)tin (IV) (TDMASn), and its influence on the properties of ultimate films remain unexplored. Here a significant degradation of TDMASn into bis(dimethylamido)tin(II) via the Sn-imine complex is reported, and its impact on the corresponding films and devices is examined. It is found, surprisingly, that this degradation does not affect the growth kinetics and morphology of ALD-SnOx films. But it notably deteriorates their electronic properties, resulting in films with twice the electrical resistance due to different oxidation mechanisms of the degradation products. Perovskite solar cells employing such films exhibit a significant loss in power conversion efficiency, primarily due to charge transport and transfer losses. These findings urge strategies to stabilize TDMASn, a critical precursor for ALD-SnOx films, or to identify alternative materials to achieve efficient and reliable devices.