Defects In 4H Research Articles

Room temperature coherence properties and 14N nuclear spin readout of NV centers in 4H–SiC

We have investigated the room temperature spin coherence properties of the axial NVkk center in 4H–SiC by pulsed high-frequency electron spin resonance and electron-nuclear double resonance techniques. Our results show a remarkable phase coherence time (TCoherence) of 25.3 μs at room temperature for ensembles of NV centers. We demonstrate precise control over NV defect spins through Rabi oscillations, which exhibit a linear response to microwave power. Additionally, the demonstrated room temperature readout of the intrinsic 14N nuclear spin (I = 1) underscores its potential as a robust nuclear spin memory resource, further positioning NV defects in 4H–SiC as an advanced platform for implementing cutting-edge quantum technologies in semiconductor systems.

The role of boron related defects in limiting charge carrier lifetime in 4H–SiC epitaxial layers

One of the main challenges in realizing 4H–SiC (silicon carbide)-based bipolar devices is the improvement of minority carrier lifetime in as-grown epitaxial layers. Although Z1/2 has been identified as the dominant carrier lifetime limiting defect, we report on B-related centers being another dominant source of recombination and acting as lifetime limiting defects in 4H–SiC epitaxial layers. Combining time-resolved photoluminescence (TRPL) measurement in near band edge emission and 530 nm, deep level transient spectroscopy, and minority carrier transient spectroscopy (MCTS), it was found that B related deep levels in the lower half of the bandgap are responsible for killing the minority carriers in n-type, 4H–SiC epitaxial layers when the concentration of Z1/2 is already low. The impact of these centers on the charge carrier dynamics is investigated by correlating the MCTS results with temperature-dependent TRPL decay measurements. It is shown that the influence of shallow B acceptors on the minority carrier lifetime becomes neutralized at temperatures above ∼422 K. Instead, the deep B related acceptor level, known as the D-center, remains active until temperatures above ∼570 K. Moreover, a correlation between the deep level concentrations, minority carrier lifetimes, and growth parameters indicates that intentional nitrogen doping hinders the formation of deep B acceptor levels. Furthermore, tuning growth parameters, including growth temperature and C/Si ratio, is shown to be crucial for improving the minority carrier lifetime in as-grown 4H–SiC epitaxial layers.

Application of imaging ellipsometry and white light interference microscopy for detection of defects in epitaxially grown 4H–SiC layers

Critical defects, also known as device killers, in wide bandgap semiconductors significantly affect the performance of power electronic devices. We used the methods imaging ellipsometry (IE) and white light interference microscopy (WLIM) in a hybrid optical metrology study for fast and non-destructive detection, classification, and characterisation of defects in 4H–SiC homoepitaxial layers on 4H–SiC substrates. Ellipsometry measurement results are confirmed by WLIM. They can be successfully applied for wafer characterisation already during production of SiC epilayers and for subsequent industrial quality control.

Improvement mechanism of brittle-plastic transition and residual stress in scratching 4H–SiC implanted by hydrogen ions

This paper aims to improve the machining efficiency of silicon carbide (SiC), reduce residual surface stress, inhibit surface cracks, and reduce surface damage. Single-point diamond scratch experiments were performed on SiC samples after hydrogen ions implantation to study the macro-scale machining performance. The improvement mechanism by which ion implantation reduces surface cracks and machining defects in 4H–SiC samples under different loading forces was comparatively studied. Scale-like cracks and brittle fracture fragments in the scratched area of the ion-implanted samples were reduced significantly. Acoustic emission sensors were used to detect the acoustic signal of brittle fracture. The lower intensity of the acoustic emission signal in the ion-implanted sample indicates that less brittle fracture was generated during scratching. Variation of the contour line in the scratch area with loading force was measured using laser scanning confocal microscopy. The depths of the smooth contours in the scratched area of the samples without and with ion implantation were 96 nm and 360 nm, respectively. The scratch area was scanned by a Raman spectrometer to quantitatively study the effect of ion implantation on micro-level defects. Formulas illustrating the relationship between residual stresses and Raman shift displacement were derived by integrating Raman shift and a secular equation. The results show a reduction in defects at microscale, an enhancement of machinability, and a reduction in residual stresses on the surface of the ion-implanted sample. Ion implantation assisted machining technology can effectively improve the machining quality and efficiency of SiC wafers.

Effects of electronic energy deposition on pre-existing defects in 6H–SiC

Silicon carbide is widely used in radiation environments due to its excellent properties. However, when exposed to the strong radiation environment constantly, plenty of defects are generated, thus causing the material performance downgrades or failures. In this paper, the two-temperature model (2T-MD) is used to explore the defect recovery process by applying the electronic energy loss (Se) on the pre-damaged system. The effects of defect concentration and the applied electronic energy loss on the defect recovery process are investigated, respectively. The results demonstrate that almost no defect recovery takes place until the defect density in the damage region or the local defect density is large enough, and the probability of defect recovery increases with the defect concentration. Additionally, the results indicate that the defect recovery induced by swift heavy ions is mainly connected with the homogeneous recombination of the carbon defects, while the probability of heterogeneous recombination is mainly dependent on the silicon defects.

Optical Characterization of Native Defects in 4H–SiC Irradiated by 10 MeV Electrons with Subsequent Annealing

Low-temperature photoluminescence was employed to investigate the defects of 4H–SiC crystals after high-energy electron irradiation, and the annealing characteristics and dependence of the detecting temperature and irradiation doses were investigated. Results showed that the emission, associated with carbon antisite–vacancy (VCCSi)+ defects was dominant in the electron-irradiated 4H–SiC crystal. With increase in detecting temperature, the emission decreased demonstrating red-shifted, and the full width at half-maximum broadened, which was attributed to the increase in the concentration of carriers arising from thermal activation at high temperature. The emission intensity was the highest value at an irradiation dose of 7.9 × 1018 e/cm2, and then began to decrease. This revealed the lattice damage caused by long-term high-energy irradiation, which reduced the intensity of the defect radiation in the spectrum.

First principles predictions of magneto-optical data for semiconductor point defect identification: the case of divacancy defects in 4H–SiC

Study and design of magneto-optically active single point defects in semiconductors are rapidly growing fields due to their potential in quantum bit (qubit) and single photon emitter applications. Detailed understanding of the properties of candidate defects is essential for these applications, and requires the identification of the defects microscopic configuration and electronic structure. In multi-component semiconductors point defects often exhibit several non-equivalent configurations of similar but different characteristics. The most relevant example of such point defect is the divacancy in silicon carbide, where some of the non-equivalent configurations implement room temperature qubits. Here, we identify four different configurations of the divacancy in 4H–SiC via the comparison of experimental measurements and results of first-principle calculations. In order to accomplish this challenging task, we carry out an exhaustive numerical accuracy investigation of zero-phonon line and hyperfine coupling parameter calculations. Based on these results, we discuss the possibility of systematic quantum bit search.

Quantum decoherence dynamics of divacancy spins in silicon carbide.

Long coherence times are key to the performance of quantum bits (qubits). Here, we experimentally and theoretically show that the Hahn-echo coherence time of electron spins associated with divacancy defects in 4H–SiC reaches 1.3 ms, one of the longest Hahn-echo coherence times of an electron spin in a naturally isotopic crystal. Using a first-principles microscopic quantum-bath model, we find that two factors determine the unusually robust coherence. First, in the presence of moderate magnetic fields (30 mT and above), the 29Si and 13C paramagnetic nuclear spin baths are decoupled. In addition, because SiC is a binary crystal, homo-nuclear spin pairs are both diluted and forbidden from forming strongly coupled, nearest-neighbour spin pairs. Longer neighbour distances result in fewer nuclear spin flip-flops, a less fluctuating intra-crystalline magnetic environment, and thus a longer coherence time. Our results point to polyatomic crystals as promising hosts for coherent qubits in the solid state.

First Principles Identification of Divacancy Related Photoluminescence Lines in 4H and 6H-SiC

Nowadays, computational techniques can greatly facilitate the identification of point defect related photoluminescence and EPR centers in semiconductors. Once the identification has been achieved, one can gain a detailed description of the microstructure and the electron configuration of the defect, providing a basis for further understanding and development. Recently, the importance of divacancy and related point defects in different polytypes of SiC has substantially increased due to their possible quantum bit application. However, their different configurations have not been satisfactorily identified yet. In our study, we carry out large-scale first principles supercell calculations to identify the divacancy related point defects in 4H and 6H-SiC. By resolving some general accuracy issues of usual ab initio supercell techniques, we are able to obtain convergent photoluminescence (PL) energies, zero-field-splitting, and hyperfine parameters. Our results confirm the previous assignment of the PL1-4 PL lines in 4H-SiC (also known as UD-2 luminescence lines previously) to the four possible divacancy configurations and provide the identification of QL1,QL2, and QL6 PL lines in 6H-SiC. In all cases the calculated zero-field and hyperfine tensors’ parameters are provided.

Activation and control of visible single defects in 4H-, 6H-, and 3C-SiC by oxidation

In this work, we present the creation and characterisation of single photon emitters at the surface of 4H- and 6H-SiC, and of 3C-SiC epitaxially grown on silicon. These emitters can be created by annealing in an oxygen atmosphere at temperatures above 550 °C. By using standard confocal microscopy techniques, we find characteristic spectral signatures in the visible region. The excited state lifetimes are found to be in the nanosecond regime in all three polytypes, and the emission dipoles are aligned with the lattice. HF-etching is shown to effectively annihilate the defects and to restore an optically clean surface. The defects described in this work have ideal characteristics for broadband single photon generation in the visible spectral region at room temperature and for integration into nanophotonic devices.

Point defects in 4H–SiC epilayers introduced by neutron irradiation

Electronic properties of radiation damage produced in 4H–SiC by neutron irradiation and its effect on electrical parameters of Junction Barrier Schottky (JBS) diodes were investigated. 4H–SiC N-epilayers, which formed the low-doped N-base of JBS power diodes, were irradiated with 1MeV neutrons with fluences ranging from 1.3×1013 to 4.0×1014cm−2. Radiation defects were then characterized by capacitance deep-level transient spectroscopy, I–V and C–V measurement. Results show that neutron irradiation introduces different point defects giving rise to acceptor levels lying 0.61/0.69, 0.88, 1.03, 1.08 and 1.55eV below the SiC conduction band edge. Introduction rates of these centers are ranging from 0.64 to 4.0cm−1. These defects have a negligible effect on blocking and dynamic characteristics of irradiated diodes. However, the acceptor character of introduced deep levels and their fast introduction deteriorate diode’s ON-state resistance already at fluences exceeding 1×1014cm−2.

Growth rate and surface morphology of 4H–SiC crystals grown from Si–Cr–C and Si–Cr–Al–C solutions under various temperature gradient conditions

The growth rate and surface morphology of 4H–SiC crystals prepared by solution growth with Si1−xCrx and Si1−x−yCrxAly (x=0.4, 0.5 and 0.6; y=0.04) solvents were investigated under various temperature conditions. The growth rate was examined as functions of the temperature difference between the growth surface and C source, the amount of supersaturated C and supersaturation at the growth surface. We found that generation of trench-like surface defects in 4H–SiC crystals was suppressed using Si1−x−yCrxAly solvents even under highly supersaturated conditions where the growth rate exceeded 760µm/h. Conversely, trench-like defects were observed in crystals grown with Si1−xCrx solvents under all experimental conditions. Statistical observation of the macrostep structure showed that the macrostep height in crystals grown with Si1−x−yCrxAly solvents was maintained at lower levels than that obtained using Si1−xCrx solvents. Addition of Al prevents the macrosteps from developing into large steps, which are responsible for the generation of trench-like surface defects.

Formation mechanism of Type 2 micropipe defects in 4H–SiC crystals

We report experimental studies on the formation of Type 2 micropipe defects in 4H–SiC crystals grown by a physical vapor transport method. Compared with Type 1 micropipes, Type 2 micropipes exhibit new features allowing them to lie at an oblique angle about 12° to the [0001] crystal axis and are smaller in size than Type 1 micropipes. By changing the growth conditions, we find that a smaller axial temperature gradient and a larger grain size in the SiC source are beneficial to eliminate the Type 2 micropipes. We think that the liquid silicon is responsible for the formation of Type 2 micropipes. A possible formation mechanism for Type 2 micropipes is put forward.

Microscopic structure and energy transfer of vacancy-related defect pairs with Erbium in wide-gap semiconductors

Electron Paramagnetic Resonance (EPR) measurements of Erbium-doped 6H–SiC and wurtzite GaN samples are compared to total energy calculations based on density functional theory (DFT) in order to investigate the well-known luminescence of the intra 4 f-shell transition at 1540 nm, useful in light-emitting diodes or lasers. The highly correlated f-electrons of Erbium (Er) have been treated within an LDA+U approach. We discus how pairs of an Er-ion with intrinsic defects can be responsible in GaN and SiC for relaxing the selection rules for intra 4 f-shell transitions: In GaN our EPR investigation indicates the presence of a nitrogen vacancy next to the Er-ion. Through controlled generation of intrinsic defects in 6H–SiC single crystals and EPR measurements we support the corresponding model in SiC, that predicts defect pairs of an Er-ion and a neighboring carbon vacancy. In other words, low-energy irradiation seems to be a promising way to enhance the Er-luminescence desired for device applications.

Annealing induced extended defects in as-grown and ion-implanted 4H–SiC epitaxial layers

The formation of extended defects in the 4H–SiC epilayer induced by the implantation/annealing process was investigated using synchrotron reflection x-ray topography, KOH etching analysis, and transmission electron microscopy. High temperature annealing was performed for the 4H–SiC epilayer with or without the implantation of nitrogen or aluminum ions. Other than the formation of platelet extrinsic Frank-type faults in the implanted region as reported previously, we find the formation modes of extended defects in following three categories: (i) dislocation formation near the epilayer/substrate interface, (ii) dislocation formation near the implanted region, and (iii) the formation of Shockley-type defects near the surface. The defect morphology and process dependence of each type are also discussed.

Vacancy-type defects in 6H–silicon carbide induced by He-implantation: a positron annihilation spectroscopy approach

Six-fold helium ion implantation was carried out on nitrogen doped n-type 6H–SiC epi samples. A box-shaped He-implantation profile and damage region was thus introduced. Vacancy-type defects in the implanted region were studied by positron annihilation spectroscopy using a monoenergetic positron beam. The average size of the vacancy-type defect detected in the as-He-implanted sample was the divacancy (V2). Thermal annealing had the effect of shrinking the defective region. Annealing at temperatures lower than 900 °C had the effect of removing vacancy-type defects in the defective region. While the annealing temperature is above 900 °C, the size of the vacancy-type defects in the defective region increased with annealing temperature. At the annealing temperature of 1600 °C, the defective region reduced to ∼100 nm and the vacancy-type defects within the region agglomerated to clusters having an average size of 14 V2.

Determination of defects in 6H–SiC single crystals irradiated with 20 MeV Au ions

In this paper, the determination of the defects induced by 20 MeV Au irradiations in hexagonal silicon carbide single crystals is discussed. The evolution of the irradiation-induced defects as a function of the ion fluence has been studied as a function of depth below the surface using 0.5–25 keV positron beam based Doppler annihilation-ray broadening spectrometry. Results show the detection of two different kinds of defects, depending on the ion fluence.

Observation of trapping defects in 4H–silicon carbide metal-oxide-semiconductor field-effect transistors by spin-dependent recombination

We utilize a highly sensitive electron spin resonance technique called spin-dependent recombination to observe deep level dangling bond centers at and very near the SiC∕SiO2 interface in fully processed n-channel 4H–SiC lateral metal-oxide-semiconductor field-effect transistors. The axially symmetric g tensor of the largest signal strongly suggests that the responsible defect is a dangling bond center with the dangling bond orbital pointing along the crystalline c axis.

Correlation between morphological defects, electron beam-induced current imaging, and the electrical properties of 4H–SiC Schottky diodes

Defects in SiC degrade the electrical properties and yield of devices made from this material. This article examines morphological defects in 4H–SiC and defects visible in electron beam-induced current (EBIC) images and their effects on the electrical characteristics of Schottky diodes. Optical Nomarski microscopy and atomic force microscopy were used to observe the morphological defects, which are classified into 26 types based on appearance alone. Forward and reverse current–voltage characteristics were used to extract barrier heights, ideality factors, and breakdown voltages. Barrier heights decrease about linearly with increasing ideality factor, which is explained by discrete patches of low barrier height within the main contact. Barrier height, ideality, and breakdown voltage all degrade with increasing device diameter, suggesting that discrete defects are responsible. Electroluminescence was observed under reverse bias from microplasmas associated with defects containing micropipes. EBIC measurements reveal several types of features corresponding to recombination centers. The density of dark spots observed by EBIC correlates strongly with ideality factor and barrier height. Most morphological defects do not affect the reverse characteristics when no micropipes are present, but lower the barrier height and worsen the ideality factor. However, certain multiple-tailed defects, irregularly shaped defects and triangular defects with 3C inclusions substantially degrade both breakdown voltage and barrier height, and account for most of the bad devices that do not contain micropipes. Micropipes in these wafers are also frequently found to be of Type II, which do not run parallel to the c axis.

Cross-sectional structure of carrot defects in 4H–SiC epilayers

Surface morphology of carrot defects in 4H–SiC epilayers is described based on optical microscopy and molten potassium hydroxide etching. Its crystallographic structure is investigated using cross-sectional transmission x-ray topography. A threading screw dislocation in substrate serves as the nucleation source of a carrot. At the beginning of the epitaxial growth, the source dislocation is deflected toward the step-flow direction where a basal plane dislocation and a vertical planar defect nucleate together. The vertical planar defect fills the space between the basal plane dislocation and the deflected threading dislocation. This structure forms characteristic morphology on the epilayer surface, such as groove, shallow trench, etch line of the groove, and hexagonal and oval etch pits at each end of the groove.