Defect Density Of Absorber Layer Research Articles

Simulation‐Based Performance Analysis of Lead‐Free Bismuth Perovskite Solar Cells: A Comparative Study of Cs3Bi2I9 and (CH3NH3)3Bi2I9 ‐based Perovskite Solar Cells

AbstractPerovskite solar cells (PSCs) have emerged as promising candidates in PV research due to their exceptional photovoltaic properties. However, the toxicity and environmental concerns associated with lead‐based perovskites have led to the exploration of lead‐free alternatives. In this study, the performance of lead‐free bismuth PSCs, specifically PSCs based on Cesium Bismuth Iodide (Cs3Bi2I9) and Methyl Ammonium Bismuth Iodide (MA3Bi2I9), is investigated. Numerical simulations using the solar cell capacitance simulator (SCAPS) are conducted to comprehensively analyze the influence of key parameters, including the band‐to‐band radiative recombination rate, the absorber layer defect density, the absorber layer/electron transport layer (ETL) interface defect density, the absorber layer/hole transport layer interface (HTL) defect density, operating temperatures, and series and shunt resistances, and to optimize the proposed PSCs accordingly. The simulation results demonstrate a significant impact of these key parameters on the performance of Cs3Bi2I9 and MA3Bi2I9 PSCs. The optimized Cs3Bi2I9‐based PSC exhibited notable performance characteristics, including a PCE of 13.81%, a Voc of 1.16 V, a Jsc of 18.14 mA cm−2, and FF of 65.51%. In contrast, the MA3Bi2I9‐based PSC demonstrated relatively lower performance, with a PCE of 11.82%, Voc of 1.14 V, Jsc of 18.06 mA cm−2, and FF of 57.33%. The study on the defect density at the interfaces revealed the performance of PSCs is predominantly influenced by defects at the front interface (ETL/Absorber) rather than the rear interface (HTL/Absorber). These results provide valuable insights for the experimental design and optimization of lead‐free bismuth PSCs.

Device simulation and optimization of HTL-free perovskite solar cell with CH3NH3SnBr3 as the absorber layer using solar cell capacitance simulator software

Perovskite solar cells without a hole transport layer have gained popularity due to their stability and affordable manufacturing cost. In this work, device simulation of the solar cell structure is done using SCAPS-1D software with TiO2 as the Electron Transport Layer while toxic-free compound CH3NH3SnBr3 as the absorber material. The efficiency of the structure is found to be 12.63%. The cell performance parameters are investigated by varying individual cell parameters such as absorber layer thickness, absorber layer defect density and doping concentration, ETL thickness, ETL doping concentration, temperature and defect density of the absorber/ETL interface while holding others constant. Simulation with the optimised cell parameter values improves the efficiency to 24.02%.

Numerical simulation and performance optimization of a lead-free inorganic perovskite solar cell using SCAPS-1D

The perovskite solar cells, founded on lead halides, have garnered significant attention from the photovoltaic industry owing to their superior efficiency, ease of production, lightweight characteristics, and affordability. However, due to the hazardous nature of lead-based compounds, these solar cells are currently unsuitable for commercial production. In this context, a lead-free perovskite, cesium-bismuth iodide (Cs3Bi2I9) is considered as a potential alternative to the lead halide-based cell due to their non-toxicity and stability, but this perovskite cannot be matched with random hole transport layer (HTL) and electron transport layer (ETL) materials compared to lead halide-based perovskite because of their crystal structure and band gap. Therefore, in this study, performance comparison of different ideal HTL and ETL materials for Cs3Bi2I9 perovskite layer were studied using SCAPS-1D device simulation on the basis of open circuit voltage, short circuit current, power conversion efficiency (PCE) and fill factor (FF) as well as several novel PSC configuration models were designed that can direct for further experimental research for PSC device commercialization. Results from this investigation reveals that the maximum efficiency of 20.96 % is obtained for the configuration ITO/WS2/Cs3Bi2I9/NiO/Au with optimized parameters such as thickness 400 nm, band gap 2.1eV, absorber layer defect density 1012 cm−3, donor density of ETL 1018 cm−3 and the acceptor density of HTL 1020 cm−3.

Investigation of suitable buffer layer for PbS-TBAI/PbS-EDT colloidal quantum dot solar cell using SCAPS-1D

Colloidal quantum dots (CQD) are emerging third-generation photovoltaic technologies because of their ability to link a wider range of the light spectrum compared to those of perovskite, crystalline, and copper indium gallium selenide (CIGS) solar cells. In this work, a Lead Sulphide (PbS) CQD solar cell architecture with Ag2S, CdS, ZnSe and ZnS buffer layer is presented. The device consisting of PbS-tetrabutyle ammonium iodide (PbS-TBAI) as an absorber layer, PbS-1,2-ethanedithiol (PbS-EDT) as a hole transport layer (HTL), TiO2 as an electron transport layer (ETL), and fluorine tin oxide (FTO) as an oxide layer. The electrical performances of the solar cells were simulated using SCAPS-1D while taking into account different buffer layers with increasing bandgap values. With ZnS acting as a buffer layer, the computational modelling and analysis of architectural PbS CQD solar cell result in an efficiency of 17.12%. Additionally, the parameters of the solar cell have been studied to be affected by the thickness and bandgap of the absorber and HTL layers, the effect of acceptor concentration with various buffer layers, the impact of temperature, the effect of HTL doping density, and the effect of absorber layer defect density. This study can serve as a guide for future PbS CQD solar cells.

Achieving above 25 % efficiency from FA0.85Cs0.15Pb(I0.85Br0.15)3 perovskite solar cell through harnessing the potential of absorber and charge transport layers

In the present article, better stability and enhanced optical behavior have been reported by using mixed -cation lead mixed - halide perovskites, [FAxCs1−xPb(IxBr1−x)3]x=0.85 as the active layer while SnO2 as electron transport layer and Spiro-OMeTAD has been chosen as hole transport layer. The design of the cell configuration FTO/SnO2/[FAxCs1−xPb(IxBr1−x)3]x=0.85/Spiro-OMeTAD/Au has been developed with the help of SCAPS-1D software. In this work,15.86 % power conversion efficiency has been attained which is approximately equal to experimentally reported result. Further we have analyzed the comparative investigation of various HTL layers in place of Spiro-OMeTAD. Further MoO3 based device parameters like thickness, bandgap and defect density of absorber layer, effect of interface, shunt and series resistance and temperature were tuned and calculated to get their optimum values. Finally, PCE of 25.85 % was attained for the optimized device structure FTO/SnO2/[FAxCs1−xPb(IxBr1−x)3]x=0.85/MoO3/Au. These outcomes could provide an idea for highly efficient solar cell device fabrication.

Performance Analysis of SnO2/CsSnGeI3/CuSCN perovskite solar cells using SCAPS 1D Simulator

In this paper, we have used Cesium tin-germanium triiodide (CsSnGeI3) perovskite-based solar cells (PSC). Here, SnO2 and CuSCN have been used as electron transport and hole transport layers, respectively. We have optimized the performance parameters of this device using an open-source software known as Solar cell capacitance simulator (SCAPS–1D). We have varied the thickness of absorber layer to understand its impact on the efficiency of the proposed solar cell. We have also varied the interface defects and defect density of absorber layer to optimize the performance of this device. Further, we have also varied the thickness of ETL and HTL with respect to absorber layer to determine the best suitable thickness of all the layers. Later, we have varied the electron affinity of ETL layer to determine the most suitable value. Finally, we have varied the work function of the back metal contact to understand its influence on the efficiency of the solar cell. The analysis indicates that the highest obtained efficiency of this device is 31.97% and the observed open circuit voltage and fill factor is 1.25 V and 89.97%, respectively.

Performance evaluation of ZnSnN2 solar cells with Si back surface field using SCAPS-1D: A theoretical study

The earth-abundant semiconductor zinc tin nitride (ZnSnN2) has garnered significant attention as a prospective material in photovoltaic and lighting applications, primarily due to its tunable narrow bandgap and high absorption coefficient. This study focuses on a numerical investigation of ZnSnN2 solar cell structures using the SCAPS 1-D software. The objective is to analyze the influence of various physical and geometrical parameters on solar cell performance. These parameters include the thicknesses of the ZnO window layer, CdS buffer layer, ZnSnN2 absorber layer, and Si back surface field layer (BSF), as well as operating temperature, series and shunt resistances (RS and Rsh), absorber layer defect density, interface defects, and the generation-recombination profile of the n-ZnO:Al/n-CdS/p-ZnSnN2/p-Si/Mo structure. We have evaluated the capabilities of this novel material absorber by investigating its performance across a range of thicknesses. We have started with ultrathin absorber thicknesses and gradually increased them to thicker levels to determine the optimal thickness for achieving high efficiency. Under optimal conditions, a thin solar cell with a thickness (wp) of 1 μm achieved an efficiency (η) of 23.9%. In a practical solar cell operating at room temperature, optimal parameters were observed with a thicker absorber layer (wp = 8 μm) and a BSF width of 0.3 μm. The cell exhibited resistances of Rsh = 106 Ω cm2 and Rs = 1 Ω cm2, along with a low defect density (Nt = 1010 cm−3) in the ZnSnN2 semiconductor. These factors combined to yield an impressive efficiency of 29.5%. Numerous studies on emerging ternary nitride semiconductors (Zn-IV-N2) have highlighted ZnSnN2 as a promising material for thin-film photovoltaics. This compound is appealing due to its abundance, non-toxicity, and cost-effectiveness. Unlike conventional solar cells that depend on rare, toxic, and costly elements, these components are still essential for today's solar cell technology.

Impact of tin-based perovskite as a hole transport layer on the device performance of stable and 27.10% efficient CdTe-based solar cell by numerical simulation

In this work, a numerical simulation study on cadmium telluride (CdTe)-based thin film solar cell structure utilizing CdTe as absorber layer, Cadmium sulphide (CdS) as window layer, and lead-free perovskite (CH3NH3SnBr3) as a hole transport layer (HTL) is presented for the first time. The effect of different material parameters such as shallow uniform acceptor density (NA) of absorber and HTL, thicknesses of absorber and HTL, Electron affinity of HTL, defect density of absorber layer, series and shunt resistance, back contact metal work function, and operating temperature on photovoltaic (PV) parameters such as open-circuit voltage (Voc), short circuit current (Jsc), fill factor (FF), and photo conversion efficiency (PCE) has been studied. With the introduction of perovskite as HTL, it is observed that Voc increased from 0.66 V to 1.17 V by creating a suitable band alignment with the CdTe absorber layer, causing an improvement in efficiency by preventing carrier recombination at the back contact surface. The designed solar cell has shown an enhanced PCE of 27.10% with Voc ∼1.17 V, Jsc ∼27.76 mA/cm2, and FF ∼83.40%. Thus, from the study, it is possible to achieve high-performance CdTe-based solar cells using perovskite as HTL for photovoltaic applications.

A hybrid CapSA-WHO method used for performance enhancement of tandem perovskite solar cell

This manuscript proposes a hybrid method for determining the effects of contact-electrode and light-power in tandem perovskite solar-cell (PSC) efficiency. The proposed system combines the Capuchin-Search-Algorithm (CapSA) and the Wild-Horse-Optimizer (WHO), together known as CapSA-WHO method. The proposed work creates the following major contributions: (i) investigating the composition of the tandem Perovskite Solar-Cell (SC) layer; (ii) investigating the effectiveness of PSC depending on Formamidinium and tin; (iii) modelling proficient hybrid solar cells; and (iv) analyzes the performance of the proposed SC. The CapSA-WHO technique is used to examine the effect of absorbent layer materials and optimize the devices. This work also investigated the impacts of various materials, such as hole and transport layers, as well as metal back contact, absorber layer flaws, light radiation power, and so on. Moreover, the influence of temperature variation on absorber layer defect density on solar cell is examined. The proposed CapSA-WHO hybrid method is executed in MATLAB or Simulink site and its performance is compared to existing methods. The system gives an optimal solution with minimal computing time by employing the CapSA-WHO technique. Furthermore, the proposed method discovered minimum fault density to attain maximum device efficiency.

Numerical Study of 25.459% Alloyed Inorganic Lead-Free Perovskite CsSnGeI3-Based Solar Cell by Device Simulation

The toxic lead component as well as the expensive and less stable spiro-OMeTAD in perovskite solar cells (PSCs) pose a great deal of hindrance to their commercial viability. Herein, a computational approach towards modeling and simulation of all inorganic cesium tin-germanium triiodide (CsSnGeI3) based perovskite solar cell was proposed and implemented using solar cell capacitance simulator (SCAPS–1D) tool. Aluminium doped zinc oxide (ZnO:Al) and Copper Iodide (CuI) were used as electron and hole transport layers (ETL and HTL) respectively. The initial device without any optimization gave a power conversion efficiency (PCE) of 24.826%, fill factor (FF) of 86.336%, short circuit current density (Jsc) of 26.174 mA/cm2 and open circuit voltage (Voc) of 1.099 V. On varying the aforementioned parameters individually while keeping others constant, the optimal values are 1000 nm for absorber thickness, 1014 cm-3 for absorber layer defect density, 50 nm for ETL thickness, 1017 cm-3 for ETL doping concentration and 260 K for temperature. Simulating with these optimized values results to PCE of 25.459%, Voc of 1.145 V, Jsc of 25.241 mA/cm2, and a FF of 88.060%. These results indicate that the CsSnGeI3 is a viable alternative absorbing layer for usage in the design of a high PCE perovskite solar cell device.

Theoretical optimization of defect density and band offsets for CsPbI2Br based perovskite solar cells

The stability of Methyl-Ammonium (MA) and Formamidinium (FA) based perovskite solar cells (PSCs) has always been a matter of concern because of volatile nature of organic cations present in them. So, it becomes necessary to replace organic cations with inorganic non-volatile cations. Recently, lot of efforts have been put in to a new class of PSCs, CsPbX 3 (where, X= Br, I, Cl etc.) wherein organic cation is replaced by Caesium, to address the stability issue. Despite being more stable than their organic counterparts, the PCE of CsPbI 2 Br based PSCs is still low as compared to that offered by Methyl-Ammonium (MA) and Formamidinium (FA) based PSCs. In this paper, we have proposed a new CsPbI2Br based PSC structure having n-i-p architecture: FTO/Zn(O 0.3 , S 0.7 )/CsPbI 2 Br/HTL/Au. The proposed structure has been simulated using SCAPS software by employing new ETL Zn(O 0.3 , S 0.7 ) and various HTLs (spiro-OMeTAD, CuSCN, CuI and MoO 3 ). Initial simulations reveal that the proposed PSC achieves best PCE of 20.36%, when CuI is used as HTL. The impact of defect density ( N t ) in CsPbI 2 Br layer has been studied for various HTLs and optimum value of N t obtained as 1.0 × 10 11 cm -3 . Defect densities at ETL/CsPbI 2 Br and CsPbI 2 Br/HTL interfaces have also been optimised at values of 1.0 × 10 15 cm -3 and 1.0 × 10 15 cm -3 respectively. Finally, VBO and CBO at respective interfaces have also been optimized and the final proposed structure having Zn(O 0.3 , S 0.7 ) as ETL and CuI as HTL resulted in the PCE of 21.51% with V OC of 1.55 V, J SC of 15.21 mAcm -2 and FF of 90.77%, which are comparable to the Shockley-Queisser limit for CsPbI 2 Br perovskite solar cells, thereby, considerably enhancing the efficiency of inorganic perovskite solar cells. • CsPbI 2 Br based PSC with Zn(O 0.3 S 0.7 ) as an ETL is simulated. • HTLs including Spiro-oMeTAD, CuI, CuSCN and MoO 3 are implemented in simulated structure. • CuI found to be most efficient HTL among others. • Impact of defect density of absorber layer and with its interfaces is studied. • Band offsets optimization were done to maximise the performance of PSC. • Final parameters thus obtained are: V OC - 1.5579 V, J SC - 15.21 mAcm -2 , FF - 90.77% and PCE - 21.51%.

Efficiency and Reproducibility Enhancement in Perovskite Solar Cell With MoS₂ as Electron Transport Layer: A Computational Finding

The formamidinium lead triiodide (FAPbI <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> )-based perovskite solar cell (FPSC) is perceived as a potential replacement of conventionally exploited methylammonium lead triiodide (MAPbI <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> )-based PSC owing to its better stability. In this work, we explore the possibility of utilizing molybdenum disulfide (MoS <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> ) as a prospective replacement of conventional titanium dioxide (TiO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> ) (requires high processing temperature) as an electron transport layer (ETL) in FPSC using SCAPS-1D. The results are quantitatively compared in terms of the performance metrics of simulated baseline models. Furthermore, the performance variations are also compared with respect to varying absorber layer defect density. Moreover, the reproducibility aspect of cells is compared with respect to varying carrier mobility of the absorber layer. We observe an outstanding improvement in efficiency and reproducibility of FPSCs with MoS <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> as ETL. The results highlight the vitality of ETL material properties toward efficiency and reproducibility enhancement of FPSCs. These findings serve as an important benchmark for improving the commercialization prospects of FPSCs.

Study the effect of defects on the quantum efficiency of perovskite solar cells

Perovskite solar cells (PSCs) have generated considerable interest in the field of solar energy. With the rapid development of fabrication technology, high efficiency, environmentally friendly perovskite solar cells are becoming more attractive as candidates for power generation. Defects in the absorber and interface layers of mixed lead halide perovskite solar cells reduce the efficiency and stability of the cells. The current study examined the impact of defects density, defect capturing cross-section, defect level, and defect type on the quantum efficiency (QE) of the absorber layer. Furthermore, the impact of defects in the hole transport layer/absorber and electron transport layer/absorber interface layers is also be extensively studied. SCAPS-1D will be used to simulate perovskite solar cells in this work. The perovskite solar cells structure proposed is FTO/ ETM/ absorber/ HTM structure based on TiO2 as ETM layer; Cu2O as HTM layer, and on CH3NH3PbI3 as absorber layer. According to the results, the quantum efficiency QE reduced sharply from 90.2% to 20% with varying the density of the defect Nt and the capture cross-section carriers σ in absorber layer from 1015 cm-3 to 10 18 cm-3 and 2×10-13 cm2 to 2×10-10 cm2, respectively. Additionally, it is discovered that the capture cross-section carriers exhibits behavior similar to that of the absorber layer's defect density.

Influence/Effect of Deep-Level Defect of Absorber Layer and n/i Interface on the Performance of Antimony Triselenide Solar Cells by Numerical Simulation

The antimony sulphide (AnS) solar cell is a relatively new photovoltaic technology. Because of its attractive material, optical, and electrical qualities, Sb2Se3 is an excellent absorption layer in solar cells, with a conversion efficiency of less than 8%. The purpose of this research is to determine the best parameter for increasing solar cell efficiency. This research focused on the influence of absorber layer defect density and the n/i interface on the performance of antimony trisulfide solar cells. The researchers designed the absorber thickness values with the help of the SCAPS-1D (Solar Cell Capacitance Simulator-1D) simulation programme. For this purpose, they designed the ZnS/Sb2Se3/PEDOT: PSS planar p-i-n structure, and then simulated its performance. This result confirms a Power Conversion Efficiency (PCE) of ≥25% at an absorber layer thickness of &gt;300 nm and a defect density of 1014 cm−3, which were within the acceptable range. In this experiment, the researchers hypothesised that the antimony triselenide conduction band possessed a typical energy of ≈0.1 eV and an energetic defect level of ≈0.6 eV. At the n/i interface, every condition generated a similar result. However, the researchers noted a few limitations regarding the relationship between the defect mechanism and the device performance.

Lead-free perovskite solar cell byUsing SCAPS-1D: Design and simulation

The efficiency of photovoltaic systems of perovskite materials based on organic–inorganic halide has increased and they are nearing commercialization. Lead-free perovskite materials have recently attracted the interest of researchers and the scientific community due to the toxicity issue and harmful lead-based perovskite materials. Tin, like lead (Pb) is a group 14 metals; hence, it is the most likely substitute. We use SCAPS-1D numerical simulation to optimize the device efficiency of a lead-free n-i-p based planar hetrostructure perovskite solar cell composed of intrinsic-CH3NH3SnI3 methyl ammonium tin iodide (MASnI3) as an i- and p-layer Spiro-OMeTAD with SnO2 for the n layer. Conclusions show that the absorber layer has a thickness of 600 nm, which is required for optimal cell performance and efficiency. The thickness and defect density of this absorber layer was taken into account, absorption coefficient is inversely proportional to defect density. The performance of device worsens when the defect density of absorber layer increases. The thickness and defect density of absorber layer was carefully tuned to get maximum solar cell performance and we observed an efficiency of 22.21 %, current density (JSC) of 33.8636 mA/cm2, VOC of 0.989 V and FF of 66.33 % at 600 nm thickness of absorber layer.

Study of a Lead-Free Perovskite Solar Cell Using CZTS as HTL to Achieve a 20% PCE by SCAPS-1D Simulation.

In this paper, a n-i-p planar heterojunction simulation of Sn-based iodide perovskite solar cell (PSC) is proposed. The solar cell structure consists of a Fluorine-doped tin oxide (FTO) substrate on which titanium oxide (TiO2) is placed; this material will act as an electron transporting layer (ETL); then, we have the tin perovskite CH3NH3SnI3 (MASnI3) which is the absorber layer and next a copper zinc and tin sulfide (CZTS) that will have the function of a hole transporting layer (HTL). This material is used due to its simple synthesis process and band tuning, in addition to presenting good electrical properties and stability; it is also a low-cost and non-toxic inorganic material. Finally, gold (Au) is placed as a back contact. The lead-free perovskite solar cell was simulated using a Solar Cell Capacitance Simulator (SCAPS-1D). The simulations were performed under AM 1.5G light illumination and focused on getting the best efficiency of the solar cell proposed. The thickness of MASnI3 and CZTS, band gap of CZTS, operating temperature in the range between 250 K and 350 K, acceptor concentration and defect density of absorber layer were the parameters optimized in the solar cell device. The simulation results indicate that absorber thicknesses of 500 nm and 300 nm for CZTS are appropriate for the solar cell. Further, when optimum values of the acceptor density (NA) and defect density (Nt), 1016 cm−3 and 1014 cm−3, respectively, were used, the best electrical values were obtained: Jsc of 31.66 mA/cm2, Voc of 0.96 V, FF of 67% and PCE of 20.28%. Due to the enhanced performance parameters, the structure of the device could be used in applications for a solar energy harvesting system.

Defect Investigation of Ti-Based Vacancy-Ordered Double Perovskite Solar Cell using SCAPS-1D

Despite the great promise of lead-based perovskite solar cells, their inherent toxicity and stability issues have hindered their practical applications in solar cells. Titanium(Ti)-based vacancy-ordered double perovskite Cs2TiBr6 was proposed as a non-toxic and stable substitute for lead-based perovskites. However, the efficiencies of the Cs2TiBr6 double perovskite solar cells currently have a maximum value of only 3.28%, which is still far below typical perovskite solar cells. Since the bulk defects inside the Cs2TiBr6 absorber layer are the main reason for degrading the performance of the Cs2TiBr6 double perovskite solar cell, it is worthwhile to investigate the bulk defect density in the absorber layer to optimize the performance of the Cs2TiBr6 double perovskite solar cell. In this work, we simulate the Cs2TiBr6 double perovskite solar cell with the FTO/SnO2/Cs2TiBr6/PEDOT:PSS/Au structure by using SCAPS-1D simulation software. We investigate the effect of the bulk defect density in the Cs2TiBr6 absorber layer for the performance of the Cs2TiBr6 double perovskite solar cell. The conclusion is that there is a threshold value for the bulk defect density in the Cs2TiBr6 double perovskite solar cell. Moreover, we obtain an optimal efficiency of 9.97% in the Cs2TiBr6 double perovskite solar cell by optimizing the bulk defect density. Our numerical simulation results show that the Cs2TiBr6 double perovskite solar cell has excellent potential and appropriate defect passivation is conducive for improving its performance.

Numerical study of lead free CsSn0.5Ge0.5I3 perovskite solar cell by SCAPS-1D

Lead free perovskite solar cells (PCS) are becoming a distinctly predominant area of study due to the toxicity and stability hurdles of the lead halide perovskite. Current lead-free perovskites are also plagued with low efficiency. This work is concerned with the design and analysis of CsSnGeI3 that is a viable competitor to lead based perovskites by SCAPS-1D simulator (ver.3.3.08). The primary solar cell’s structure is FTO/PCBM/ CsSn0.5Ge0.5I3 / spiro-OMeTAD/Au which achieved a power conversion efficiency (PCE) of 7.11% [1]. To enhance device performance, the effect of optimizing absorber layer defect density (1 × 1015 cm−3) and thickness (700–800 nm), doping concentration of absorber layer (1 × 1015 cm−3), variation of Electron Transport Material (ETL) and Hole Transport Material (HTL) parameters (effect of CBO and VBO and doping concentration) and potential material options for ETL and HTL are studied. The results of the simulation are as follows; maximum power conversion efficiency (PCE) 18.79%, short circuit current density (Jsc) 27.05 mA/cm2, open circuit voltage (Voc) 0.87 V and fill factor (FF) 79.25%. By choosing appropriate material parameters, improving fabrication and encapsulation processes, CsSn0.5Ge0.5I3 proves to be an environmentally friendly solar cell with high efficiency.

Device simulation of highly efficient eco-friendly CH3NH3SnI3 perovskite solar cell

Photoexcited lead-free perovskite CH3NH3SnI3 based solar cell device was simulated using a solar cell capacitance simulator. It was modeled to investigate its output characteristics under AM 1.5G illumination. Simulation efforts are focused on the thickness, acceptor concentration and defect density of absorber layer on photovoltaic properties of solar cell device. In addition, the impact of various metal contact work function was also investigated. The simulation results indicate that an absorber thickness of 500 nm is appropriate for a good photovoltaic cell. Oxidation of Sn2+ into Sn4+ was considered and it is found that the reduction of acceptor concentration of absorber layer significantly improves the device performance. Further, optimizing the defect density (1014 cm−3) of the perovskite absorber layer, encouraging results of the Jsc of 40.14 mA/cm2, Voc of 0.93 V, FF of 75.78% and PCE of 28.39% were achieved. Finally, an anode material with a high work function is necessary to get the device's better performance. The high-power conversion efficiency opens a new avenue for attaining clean energy.

Design and simulation of a high-performance Cd-free Cu2SnSe3 solar cells with SnS electron-blocking hole transport layer and TiO2 electron transport layer by SCAPS-1D

This article presents numerical investigations of the novel (Ni/SnS/Cu2SnSe3/TiO2/ITO/Al) heterostructure of Cu2SnSe3 based solar cell using SCAPS-1D simulator. Purpose of this research is to explore the influence of SnS hole transport layer (HTL) and TiO2 electron transport layer (ETL) on the performance of the proposed cell. Based on the proposed device architecture, effects of thickness and carrier concentration of absorber layer, SnS HTL, TiO2 ETL, absorber layer defect density, operating temperature and back-contact metal work function (BMWF) are studied to improve the cell performance. Our initial simulation results show that if SnS HTL is not introduced, the efficiency of standard Cu2SnSe3 cell is 1.66%, which is well agreed with the reported experimental results in literature. However, by using SnS and TiO2 as HTL and ETL, respectively and optimizing the cell parameters, a simulated efficiency of up to 27% can be achieved. For Cu2SnSe3 absorber layer, 5 × 1017 cm−3 and 1500 nm are the optimal values of carrier concentration and thickness, respectively. On the other hand, the BMWF is estimated to be greater than 5.2 eV for optimum cell performance. Results of this contribution can provide constructive research avenues for thin-films photovoltaic industry to fabricate cost-effective, high-efficiency and cadmium-free Cu2SnSe3-based solar cells.