Current Noise Spectra Research Articles

Characterisation and subtraction of current flow noise in hydrophone recordings

In the interior of the Ría de Arousa, on the northwest coast of Spain, a hydrophone is installed to provide information on environmental noise, which is very high due to the intense traffic in the area. The hydrophone, together with various oceanographic and meteorological observation equipment, is installed on a floating platform anchored in a very shallow water area with strong tidal currents. These currents cause flow noise that affects the estimation of the noise descriptors established by the Marine Strategy Framework Directive. The aim of this work is to characterise the current flow noise at the hydrophone in relation to the instantaneous current measured simultaneously at the same location. From this characterisation, the current noise spectrum is defined and subtracted from the recordings prior to the calculation of noise descriptors. This contribution provides details of the analysis of the hydrophone signals, the calculation of the flow noise spectrum as a function of current, the spectral subtraction procedure used and the effect of the subtraction on the calculation of the noise descriptors.

Research on DC arc fault detection in PV systems based on adjacent multi-segment spectral similarity and adaptive threshold model

This paper proposes a practical adaptive detection method of series DC arc that could be more adaptable to PV systems’ intricate and complex environment than conventional detecting methods. Firstly, The discharge in a short air gap with unsymmetrical dielectric-covered electrodes will bring additional noise interferences to the current of the circuit where the arc is located and give rise to the alternation of the spectrum of the noise current. By analyzing the current noise spectrum before and after the occurrence of a DC arc fault, it was found that the adjacent multi-segment spectral similarity (AMSSS) characteristic could identify the event of the mark. Secondly, an algorithm architecture using principal component analysis(PCA) of AMSSS and integrated φ-statistic was used to determine an adaptive threshold model. Finally, to validate the fidelity and resilience of the pattern, a photovoltaic plant platform containing 20 PV modules and one three-phase inverter was constructed to acquire relevant data. Then, validation of the adaptive thresholding model was implemented by including several sets of tests generated under different conditions, such as normal, shading, inverter start-up, crosstalk, and arcing conditions. According to the comparative tests, We tentatively conclude that the adaptive model has a relatively strong arc detection capability and high environmental adaptability and could be applied to natural PV systems.

Fidelity of counting the transferred electrons in a GaAs-based monolithic single-electron pump and transistor system with a charge-lock feedback circuit

We developed an electron-counting technique for a self-referenced single-electron quantized current source of a single-electron-pump system and investigated the fidelity of our whole measurement process, including single-electron pumping and electron counting by a single-electron transistor (SET) with a charge-lock feedback loop. The device was fabricated monolithically using a two-dimensional electron system of a GaAs/AlGaAs hetero-junction. In addition to the probability of single-electron transfer, we also measured the current noise spectrum of the SET, from which its charge noise power Sq was derived. The results show that the estimated charge noise of 2.2 ×10−4 e/Hz for a semiconductor-based SET is comparable to that of metallic SETs.

Signature of resonant modes in radiative heat current noise spectrum

Radiative heat transfer between bodies is often dominated by a narrow resonance in the transmission, e.~g. due to a cavity mode or a surface excitation. However, this resonant character is not visible in the average heat current. Here, we show that the noise spectrum of heat current can serve as a direct probe of the heat-carrying excitations. Namely, the resonant mode produces a sharp peak in the noise spectrum with a width related to the mode lifetime. We demonstrate that heat transfer in realistic superconducting circuits or between two-dimensional metals can realize our predictions.

Tunnel current noise spectra of spins in individual dimers of molecular radicals

We report the detection of electron spin resonance (ESR) in individual dimers of the stable free radical 2,2,6,6-tetramethyl-piperidine-1-oxyl (TEMPO). ESR is measured by the current fluctuations in a scanning tunneling microscope (ESR-STM method). The multipeak power spectra, distinct from macroscopic data, are assigned to dimers having exchange and Dzyaloshinskii-Moriya interactions in the presence of spin-orbit coupling. These interactions are generated in our model by interfering electronic tunneling pathways from tip to sample via the dimer's two molecules. This is the first demonstration that tunneling via two spins is a valid mechanism of the ESR-STM method.

On the accuracy of the formula used to extract trap density in MOSFETs from 1/f noise

Noise spectroscopy is a powerful non-destructive technique to characterize the quality of gate dielectrics in MOSFETs. Trap densities are routinely extracted by fitting the 1/f part of the drain current noise spectrum with a widely known analytical expression containing several approximations within. This paper compares this 1/f noise analytical expression with microscopic simulations, evaluates its accuracy under different scenarios, and highlights when the main assumptions fall short. It is found that the expression agrees well with non-radiative multi-phonon (NMP) models at room temperature for devices featuring a thick dielectric. However, the formula fails to correctly predict the noise of nowadays aggressively scaled devices, because it neglects trapping/de-trapping with the gate electrode and the electrostatic charge scaling of the traps due to their distance from the channel.

Resistive Switching by Percolative Conducting Filaments in Organometal Perovskite Unipolar Memory Devices Analyzed Using Current Noise Spectra (Adv. Funct. Mater. 4/2022)

Resistive Switching In article number 2107727, Keehoon Kang, Jae Sung Lee, Takhee Lee, and co-workers analyze the resistive switching properties of organometal perovskite unipolar resistive memory devices with current noise spectra from various resistance states. Based on a percolation model of current paths, the noise scaling behavior correlates with conducting filaments having a fractal geometry, thus providing information regarding the underlying conducting filament network in organometal perovskite memory devices.

A Low-Noise High-Gain Broadband Transformer-Based Inverter-Based Transimpedance Amplifier

In this paper, a transformer-based bandwidth (BW) extension technique is employed to improve the BW, noise, and silicon area of inverter-based transimpedance amplifiers (TIAs) even when they use inductive peaking. A TIA based on the proposed technique, designed and laid out in a 16-nm FinFET process, demonstrates a 36% increased in BW, a 19% reduction in input-referred noise, and a 57% reduction in silicon area compared to the conventional TIA with inductive peaking. In the proposed TIA architecture, inclusion of a transformer in the forward path compensates partially for the parasitic capacitances of the inverter and relaxes the transimpedance limit of the conventional TIA. The proposed technique also lowers the input-referred current noise spectrum of the TIA. Post-layout in companion with electromagnetic (EM) simulations and statistical analysis are employed to verify the effectiveness of the proposed architecture. Simulation results show that the TIA achieves a transimpedance gain of 58 dB <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\Omega $ </tex-math></inline-formula> , a BW of 17.4 GHz, an input-referred noise of 17.4 pA/sqrt (Hz), and an eye-opening of 20 mV at a data-rate of 64 Gbps PAM4 and at a bit-error-rate (BER) of 1E-6. The whole TIA chain is expected to consume 19 mW and occupies an active area of 0.023 mm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> .

Resistive Switching by Percolative Conducting Filaments in Organometal Perovskite Unipolar Memory Devices Analyzed Using Current Noise Spectra

AbstractOrganometal halide perovskites have emerged as potential material systems for resistive memory devices besides their outstanding optical and electrical properties. Although halide‐perovskite resistive memory has the advantage of operating with a low voltage and large on/off ratio, random distribution in operation voltage remains a challenge in memory application. This stochastic operation characteristic is due to the random formation of conducting filaments that cause resistance fluctuations in the material. Therefore, it is essential to investigate the formation and dissolution of conducting filaments and their structure. However, direct observation of a nanoscale filamentary structure is often challenging. Moreover, detailed studies of conducting filaments in halide‐perovskite materials have rarely been reported. By employing a scaling theory with a fractal structure, this study investigates the geometric structures and dynamics of conducting filaments formed in organometal halide perovskite through current noise analysis. The temperature‐dependent electrical properties and current noise demonstrate the role of ion migration in the formation of conducting filaments. The findings could enhance the understanding of the resistive switching phenomena of perovskite resistive memory devices in terms of percolative conducting filaments. Thus, providing a route for achieving a stable memory operation by controlling the relevant structure and dynamics of the switching processes.

Nonequilibrium Kondo regime current noise spectrum of quantum dot systems with the single impurity Anderson model.

We investigate the nonequilibrium current noise spectrum of single impurity Anderson model quantum dot systems on the basis of the accurate dissipation equation of motion evaluations. By comparing between the equilibrium and nonequilibrium cases and between the non-Kondo and Kondo regimes, we identify the current noise spectrum of the nonequilibrium Kondo features that actually appear in the entire region of ω ∈ [-eV,eV]. It is well known that the primary Kondo characteristics at ω = ±eV = ±(μL -μR) display asymmetrical upturns and remarkable peaks in S(ω) and dS(ω)/dω, respectively. These features are originated from the Rabi interference of the transport current dynamics, with the Kondo oscillation frequency of |eV|. Moreover, we also identify the minor but very distinguishable inflections, crossing over from ω = -eV to ω = +eV. This uncovered feature would be related to the interference between two Kondo resonance channels.

Electric current noise in mesoscopic organic semiconductors induced by nuclear spin fluctuations

We demonstrate that nuclear spin fluctuations lead to the electric current noise in the mesoscopic samples of organic semiconductors showing the pronounced magnetoresistance in weak fields. For the bipolaron and electron-hole mechanisms of organic magnetoresistance, the current noise spectrum consists of the high frequency peak related to the nuclear spin precession in the Knight field of the charge carriers and the low frequency peak related to the nuclear spin relaxation. The shape of the spectrum depends on the external magnetic and radiofrequency fields, which allows one to prove the role of nuclei in magnetoresistance experimentally.

Sensitivity, Noise and Resolution in a BEOL-Modified Foundry-Made ISFET with Miniaturized Reference Electrode for Wearable Point-of-Care Applications.

Ion-sensitive field-effect transistors (ISFETs) form a high sensitivity and scalable class of sensors, compatible with advanced complementary metal-oxide semiconductor (CMOS) processes. Despite many previous demonstrations about their merits as low-power integrated sensors, very little is known about their noise characterization when being operated in a liquid gate configuration. The noise characteristics in various regimes of their operation are important to select the most suitable conditions for signal-to-noise ratio (SNR) and power consumption. This work reports systematic DC, transient, and noise characterizations and models of a back-end of line (BEOL)-modified foundry-made ISFET used as pH sensor. The aim is to determine the sensor sensitivity and resolution to pH changes and to calibrate numerical and lumped element models, capable of supporting the interpretation of the experimental findings. The experimental sensitivity is approximately 40 mV/pH with a normalized resolution of 5 mpH per µm2, in agreement with the literature state of the art. Differences in the drain current noise spectra between the ISFET and MOSFET configurations of the same device at low currents (weak inversion) suggest that the chemical noise produced by the random binding/unbinding of the H+ ions on the sensor surface is likely the dominant noise contribution in this regime. In contrast, at high currents (strong inversion), the two configurations provide similar drain noise levels suggesting that the noise originates in the underlying FET rather than in the sensing region.

Electrical cross talk of a frequency division multiplexing readout for a transition edge sensor bolometer array

We have characterized and mapped the electrical cross talk (ECT) of a frequency division multiplexing (FDM) system with a transition edge sensor (TES) bolometer array, which is intended for space applications. By adding a small modulation at 120Hz to the AC bias voltage of one bolometer and measuring the cross talk response in the current noise spectra of the others simultaneously, we have for the first time mapped the ECT level of 61 pixels with a nominal frequency spacing of 32 kHz in a 61 × 61 matrix and a carrier frequency ranging from 1MHz to 4MHz. We find that about 94% of the pixels show an ECT level of less than 0.4%. Only the adjacent pixels reach this level, and the ECT for the rest of the pixels is less than 0.1%. We also observe higher ECT levels, up to 10%, between some of the pixels, which have bundled long, parallel coplanar wires connecting TES bolometers to inductor-capacitor filters. In this case, the high mutual inductances dominate. To mitigate this source of ECT, the coplanar wires should be replaced by microstrip wires in the array. Our study suggests that an FDM system can have a relatively low ECT level, e.g., around 0.4% if the frequency spacing is 30 kHz. Our results successfully demonstrate a low electrical cross talk for a space FDM technology.

Spectral Properties of Stochastic Resonance in Quantum Transport.

We investigate theoretically and experimentally stochastic resonance in a quantum dot coupled to electron source and drain via time-dependent tunnel barriers. A central finding is a transition visible in the current noise spectrum as a bifurcation of a dip originally at zero frequency. The transition occurs close to the stochastic resonance working point and relates to quantized pumping. For the evaluation of power spectra from measured waiting times, we generalize a result from renewal theory to the ac-driven case. Moreover, we develop a master equation method to obtain phase-averaged current noise spectra for driven quantum transport.

Josephson radiation in a superconductor-quantum dot-superconductor junction

We investigate the Josephson radiation emitted by a junction made of a quantum dot coupled to two conventional superconductors. Close to resonance, the particle-hole symmetric Andreev states that form in the junction are detached from the continuum above the superconducting gap in the leads, while a gap between them opens near the Fermi level. Under voltage bias, we formulate a stochastic model that accounts for non-adiabatic processes, which change the occupations of the Andreev states. This model allows calculating the current noise spectrum and determining the Fano factor. Analyzing the finite-frequency noise, we find that the model may exhibit either an integer or a fractional AC Josephson effect, depending on the bias voltage and the size of the gaps in the Andreev spectrum. Our results assess the limitations in using the fractional Josephson radiation as a probe of topology.

Nonequilibirum noise spectrum and Coulomb blockade assisted Rabi interference in a double-dot Aharonov-Bohm interferometer

We investigate the charge-states coherence underlying the nonequilibirum transport through a spinless double-dot Aharonov-Bohm (AB) interferometer. Both the current noise spectrum and real-time dynamics are evaluated with the well-established dissipaton-equation-of-motion method. The resulted spectrums show the characteristic peaks and dips, arising from coherent Rabi oscillation dynamics, with the environment-assisted indirect inter-dot tunnel coupling mechanism. The observed spectroscopic features are in a quantitative agreement to the real-time dynamics of the reduced density matrix off-diagonal element between two charge states. As the aforementioned mechanism, these characteristics of coherence are very sensitive to the AB phase. While this is generally true for cross-correlation spectrum, the total circuit noise spectrum that is experimentally more accessible shows remarkably rich interplay between various mechanisms. The most important finding of this work is the existence of Coulomb-blockade-assisted Rabi interference, with very distinct signatures arising from the interplay between the AB interferometer and the interdot Coulomb interaction induced Fano resonance.

New Alternating Current Noise Analytics Enables High Discrimination in Gas Sensing.

Feature analysis has been increasingly considered as an important way to enhance the discrimination performance of gas sensors. In this work, a new analytical method based on alternating current noise spectrum is developed to discriminate chemically and structurally similar gases with remarkable performance. Compared with the conventional analytics based on the maximum, integral, and time of response, the noise spectrum of electrical response introduces a new informative feature to discriminate chemical gases. In experiment, three chemically and structurally similar gases, mesitylene, toluene, and o-xylene, are tested on ZnO thin film gas sensors. The result indicated that the noise analytics assisted by the support vector machine algorithm discriminated these similar gases with 94.2% in precision, about 20% higher than those obtained by conventional methods. Such a new alternating current noise analytics is very promising for application in sensors for high discrimination precision.

Current noise spectrum in a solvable model of tunneling Fermi-edge singularity

We consider tunneling of spinless electrons from a single-channel emitter into an empty collector through an interacting resonant level of the quantum dot (QD). When all Coulomb screening of sudden charge variations of the dot during the tunneling is realized by the emitter channel, the system is mapped onto an exactly solvable model of a dissipative qubit. The qubit density matrix evolution is described with a generalized Bloch equation which permits us to count the tunneling electrons and find the charge transfer statistics. The two generating functions of the counting statistics of the charge transferred during the QD evolutions from its stationary and empty state have been expressed through each other. It is used to calculate the spectrum of the steady current noise and to demonstrate the occurrence of the bifurcation of its single zero-frequency minimum into two finite-frequency dips due to the qubit coherent dynamics.

Local and nonlocal shot noise in high-TC superconducting nanowires

We obtain exact expressions for the local current and shot noise and the nonlocal shot noise in the first propagating channel of an NSN (normal-superconducting-normal) nanowire. Using high-Tc cuprate superconductors (HTS) as our model systems we utilize a scattering theory approach to derive the scattering matrix for the systems in the high transparency limit and without the Andreev approximation. The local current and shot noise spectrum is calculated and plotted. In view of recent work in the area of cooper-pair splitting (CPS) devices, we investigate the nonlocal shot noise and relate the behavior of the noise as we change parameters such as the system size, the orientation of the order parameter and the biasing of the junction in the HTS NSN system. The nonlocal shot noise shows bunching between electrons and holes that emerge from opposite sides of the superconducting segment.

Universal 1/f type current noise of Ag filaments in redox-based memristive nanojunctions.

The microscopic origins and technological impact of 1/f type current fluctuations in Ag based, filamentary type resistive switching devices have been investigated upon downscaling toward the ultimate single atomic limit. The analysis of the low-frequency current noise spectra revealed that the main electronic noise contribution arises from the resistance fluctuations due to internal dynamical defects of Ag nanofilaments. The resulting 0.01-1% current noise ratio, i.e. the total noise level with respect to the mean value of the current, is found to be universal: its magnitude only depends on the total resistance of the device, irrespective of the materials aspects of the surrounding solid electrolyte and of the specific filament formation procedure. Moreover, the resistance dependence of the current noise ratio also displays the diffusive to ballistic crossover, confirming that stable resistive switching operation utilizing Ag nanofilaments is not compromised even in truly atomic scale junctions by technologically impeding noise levels.