Silicon-air batteries (SABs) offer a promising energy storage solution due to their high theoretical energy density, cost-effectiveness, and environmental friendliness. However, practical applications are hindered by limitations in maximum discharge current density and discharge voltage, stemming from intrinsic electrochemical properties of the silicon (Si) anode and surface oxidation kinetics. This study addressed the low maximum discharge current density of SABs by leveraging the Si semiconductor properties and employing a light-assisted strategy. Introducing light to the silicon anode generates photogenerated electron-hole pairs. Furthermore, introducing light to the Si anode allowed for the generation of photogenerated electron-hole pairs. The resulting holes reacted with OH- ions to form hydroxyl radical (OH), which efficiently oxidized the Si surface, thereby facilitating electrochemical reactions. This enhancement increased the anodic reaction kinetics, thereby enhancing the maximum discharge current density of SABs. Furthermore, through this strategy, light-assisted SABs exhibited significant performance improvements: under 1 sun illumination, maximum discharge current density increased by 50.0 %, discharge voltage by 10.0 %, and power density by 45.0 %. Under 3 suns illuminations, these metrics improved further, with maximum discharge current density increasing by 87.5 %, discharge voltage by 20 %, and power density by 200 %. Additionally, quasi-solid-state SABs (QSSSABs) according to this strategy exhibited versatility across various application scenarios, thereby significantly expanding the practical potential of SABs technology.