Organic–inorganic hybrid perovskites, which attract tremendous attention due to their incredible rise in power conversion efficiencies of new-generation solar cells, have proved to be promising semiconductor materials for photoelectric devices. However, the research of this kind of perovskites as electric memory materials is rarely reported. We herein report a series of new perovskites (CH 3 NH 3 MBr 3 , where “M” refers to Pb 2+ or the mixed Pb 2+ /Bi 3+ ) with remarkable resistive switching effect for using in resistive random access memory (RRAM). Such kind of perovskites was prepared by partially substitution of Pb 2+ with Bi 3+ in a more popular compound CH 3 NH 3 PbBr 3 . Consequently, RRAM devices based on the CH 3 NH 3 Pb 1− x Bi x Br 3 demonstrate an amazing high resistance switching ratio of about 10 5 and very low gate bias voltages of about ±1 V. Such appealing characteristics are even higher than those of frequently-used transition metal oxides perovskites like BaTiO 3 and SrZrO 3 , etc . The outstanding performance of CH 3 NH 3 Pb 1− x Bi x Br 3 will inspire the intensive research of such kind of feasibly obtained perovskites as electric storage materials. Organic-metallic halide perovskite CH 3 NH 3 PbMBr 3 (“M” refers to Pb 2+ or the mixed Pb 2+ /Bi 3+ ) with remarkable resistive switching effect are reported for using in resistive random access memory (RRAM). • CH 3 NH 3 PbBr 3 ——great material for RRAM. • Doping Bi ion for more stable RRAM. • Enhancing the resistive switching effect through modifying the device structure.