Commercial Photodiodes Research Articles

A butterfly shape acceptor with rigid skeleton and unique assembly enables both efficient organic photovoltaics and high-speed organic photodetectors

Abstract It remains challenging to design efficient bifunctional semiconductor materials in organic photovoltaic and photodetector devices. Here, we report a butterfly-shaped molecule, named WD-6, which exhibits low energy disorder and small reorganization energy due to its enhanced molecular rigidity and unique assembly with strong intermolecular interaction. The binary photovoltaic device based on PM6:WD-6 achieved an efficiency of 18.41%. Notably, an efficiency of 19.42% was achieved for the ternary device based PM6:BTP-eC9:WD-6. Moreover, the photodetection device based on WD-6 demonstrated an ultrafast response speed (205 ns response time at λ of 820 nm) and a high cutoff frequency of -3 dB (2.45 MHz), surpassing the values of most commercial Si photodiodes. Based on these findings, we show-cased an application of the WD-6-based photodetection device in high-speed optical communication. These results offer valuable insights into the design of organic semiconductor materials capable of simultaneously exhibiting high photovoltaic and photo detective performance.

Enabling Low‐Noise, High‐Detectivity, Stable, and Flexible Perovskite Mesh Nanowire Photodetectors by Phenylethylamine Iodine Doping Strategy

AbstractThe poor stability, high noise, and low detectivity (D*) of perovskite mesh nanowire (PMN) photodetectors (PDs) seriously hinder their practical applications. Here, a phenylethylamine iodine doping strategy (PIDS) is introduced to solve these problems. The PIDS leads to the formation of 2D perovskite PEA2MAx‐1PbxI3x+1 (PEA = phenylethylamine, MA = methylamine) within MAPbI3 PMN, which not only prevents water and oxygen erosion to thwart PMN degradation but also inhibits the transport of dark state carriers to reduce dark current. As a result, the noise, D*, and stability of the PMN PD are simultaneously improved. The device exhibits low noise current (7.61 × 10−15 A Hz−1/2) and high D* of 3.2 × 1014 Jones, the highest D* value for PMN PDs reported to date. Moreover, the unpacked device sustains 100% of its initial performance after 2880 h of storage in the air (45–55% humidity), enabling it as the most stable MAPbI3 perovskite micro/nanostructure PD reported to date. Furthermore, the flexible device with PIDS exhibits comparable performance to that of the rigid device as well as great mechanical stability. Finally, the flexible device with PIDS demonstrates excellent optical imaging capability and a higher precision optical imaging potential than the commercial silicon photodiode S2386.

Flexible Near‐Infrared Organic Photodetectors With Ultralow Dark Current by Layer‐by‐Layer Blade Coating

AbstractNear‐infrared organic photodetector (NIR OPD) is promising for emerging wearable biosensing applications. However, their practical application is hindered by the high dark currents of devices that limit the detection of faint light. In this work, highly sensitive flexible NIR OPDs are presented with ultralow dark currents, fabricated using a layer‐by‐layer blade coating (LBL‐BC) technique. In the active layer, a fully fused‐ring molecule FM2, featuring a fixed molecular skeleton, is employed as an electron acceptor to reduce the trap density. The LBL‐BC method enhances the film order and phase purity of the active layer, significantly reduces the trap density of states, and optimizes the vertical phase separation structure of the thin film, thereby preventing reverse charge injection. As a result, a highly sensitive flexible NIR OPD is developed exhibiting an ultralow dark current density of 4.83 × 10−9 A cm−2 at −0.3 V bias and an extremely low noise current density of 7.65 × 10−15 A Hz−1/2 at 10 Hz, comparable to commercial silicon photodiodes. Furthermore, this flexible device is successfully applied for real‐time monitoring of human heartbeat rate, oxygen saturation, and motion recognition. These findings advance the development of highly sensitive NIR OPDs and their application in wearable biosensing technologies.

Ultranarrow-bandgap small-molecule acceptor enables sensitive SWIR detection and dynamic upconversion imaging.

Short-wavelength infrared (SWIR) light detection plays a key role in modern technologies. Emerging solution-processed organic semiconductors are promising for cost-effective, flexible, and large-area SWIR organic photodiodes (OPDs). However, the spectral responsivity (R) and specific detectivity (D*) of SWIR OPDs are restricted by insufficient exciton dissociation and high noise current. In this work, we synthesized an SWIR small molecule with a spectral coverage of 0.3 to 1.3 micrometers peaking at 1100 nanometers. The photodiode, with optimized exciton dissociation, charge injection, and SWIR transmittance, achieves a record high R of 0.53 ampere per watt and D* of 1.71 × 1013 Jones at 1110 nanometers under zero bias. The D* at 1 to 1.2 micrometers surpasses that of the uncooled commercial InGaAs photodiode. Furthermore, large-area semitransparent all-organic upconversion devices integrating the SWIR photodiode realized static and dynamic SWIR-to-visible imaging, along with excellent upconversion efficiency and spatial resolution. This work provides alternative insights for developing sensitive organic SWIR detection.

Flexoelectric Engineering of Bulk Photovoltaic Photodetector.

The bulk photovoltaic effect (BPVE) offers an interesting approach to generate a steady photocurrent in a single-phase material under homogeneous illumination, and it has been extensively investigated in ferroelectrics exhibiting spontaneous polarization that breaks inversion symmetry. Flexoelectricity breaks inversion symmetry via a strain gradient in the otherwise nonpolar materials, enabling manipulation of ferroelectric order without an electric field. Combining these two effects, we demonstrate active mechanical control of BPVE in suspended 2-dimensional CuInP2S6 (CIPS) that is ferroelectric yet sensitive to electric field, which enables practical photodetection with an order of magnitude enhancement in performance. The suspended CIPS exhibits a 20-fold increase in photocurrent, which can be continuously modulated by either mechanical force or light polarization. The flexoelectrically engineered photodetection device, activated by air pressure and without any optimization, possesses a responsivity of 2.45 × 10-2 A/W and a detectivity of 1.73 × 1011 jones, which are superior to those of ferroelectric-based photodetection and comparable to those of the commercial Si photodiode.

Large optoelectronic chromatic dispersion in PN-type silicon photodiodes and photovoltaic cells.

Optoelectronic chromatic dispersion (OED) is a significant source of effective chromatic dispersion in photodiodes. We present an experimental and theoretical study of OED in PN-type Si photodiodes and photovoltaic cells and report on a very large effective chromatic dispersion in these devices. As measured with the modulation phase-shift technique at a frequency of 4 kHz for these slow devices, the OED spectral sensitivity for a commercial Si photodiode is approx. 0.02 deg/nm in the 720-850 nm wavelength band and increases to 0.25 deg/nm at λ = 1µm. For a Si photovoltaic cell, the OED is approx. 0.09 deg/nm in this spectral region. These values translate into an effective chromatic dispersion parameter of approx. 1012ps/(n m ×k m) for these sub-millimeter device lengths, which is over eight orders of magnitude larger than high-dispersion materials such as chalcogenide glass. The enormous dispersion in these sub-millimeter sized silicon-based devices can be utilized for on-chip optoelectronic sensors such as wavelength monitoring and spectroscopy. The substantial OED of photovoltaic cells can be utilized for the characterization and optimization and new applications for optical sensing with these self-powered devices.

Low dose indirect conversion X-ray sensors based on Cs3Cu2I5 and CsPbBr3 coated BPW-34 photodiode

Metal halide perovskites (MHPs) have demonstrated tremendous applicability in optoelectronic research owing to their fascinating properties and extensive range of crystal structures. Among the MHPs, cesium copper iodide (Cs3Cu2I5) and cesium lead bromide (CsPbBr3) have been utilized in numerous applications like photovoltaics, photodetectors, and scintillation detectors. In this report, we present a cost-effective approach to developing an indirect conversion X-ray sensor based on Cs3Cu2I5 and CsPbBr3, utilizing a commercial photodiode (BPW 34). The MHPs were synthesized by solid-state exchange reaction, dissolved in dimethyl formamide (DMF), and recrystallized within a polymer matrix. The MHP polymer matrix was then coated onto the top surface of the photodiodes as thick films. The photocurrent characteristics of Cs3Cu2I5 and CsPbBr3 indirect X-ray sensors, upon exposure to X-rays at 70 kVp energy under various X-ray exposures and zero bias conditions, were recorded. Both MHPs exhibited a significant response to the incident X-rays. These outcomes highlight the potential of Cs3Cu2I5 and CsPbBr3 scintillators for fabricating X-ray imagers based on commercial photodiode arrays.

High-speed flexible near-infrared organic photodiode for optical communication.

Optical communication is a particularly compelling technology for tackling the speed and capacity bottlenecks in data communication in modern society. Currently, the silicon photodetector plays a dominant role in high-speed optical communication across the visible-near-infrared spectrum. However, its intrinsic rigid structure, high working bias and low responsivity essentially limit its application in next-generation flexible optoelectronic devices. Herein, we report a narrow-bandgap non-fullerene acceptor (NFA) with a remarkable π-extension in the direction of both central and end units (CH17) with respect to the Y6 series, which demonstrates a more effective and compact 3D molecular packing, leading to lower trap states and energetic disorders in the photoactive film. Consequently, the optimized solution-processed organic photodetector (OPD) with CH17 exhibits a remarkable response time of 91ns (λ = 880nm) due to the high charge mobility and low parasitic capacitance, exceeding the values of most commercial Si photodiodes and all NFA-based OPDs operating in self-powered mode. More significantly, the flexible OPD exhibits negligible performance attenuation (<1%) after bending for 500 cycles, and maintains 96% of its initial performance even after 550h of indoor exposure. Furthermore, the high-speed OPD demonstrates a high data transmission rate of 80MHz with a bit error rate of 3.5 [Formula: see text] 10-4, meaning it has great potential in next-generation high-speed flexible optical communication systems.

Ultra‐High Detectivity MBene/Si vdW Schottky Photodiode for Color Single‐Pixel Imaging

AbstractThe color single‐pixel imaging (SPI) has received significant attention due to its ability to provide more comprehensive real‐world information compared to grayscale imaging. The performance of single‐pixel photodetector is the primary determinant for the quality of color SPI. Silicon‐based Schottky photodiodes provide desirable qualities for the essential requirements of high detectivity in high resolution color SPI. Herein, a novel Mo4/3B2‐XTZ/Si hexagonal micro‐hole array (SiHMA) van der Waals (vdW) Schottky photodiode is first constructed for application in color SPI. The resultant Schottky junction possesses a Schottky barrier height up to 1.18 eV, thus leading to a dark current density of 1.47 × 10−13 A cm−2 and an ultra‐high detectivity of 4.4 × 1014 Jones at zero bias voltage, which are superior to most of Si‐based Schottky photodiodes reported and even some commercial Si photodiodes thus far. Importantly, the high detectivity and low dark current density of the photodiode allow for the use as a photodetector in high resolution Hadamard SPI. Notably, a high‐quality 256 × 256‐pixel color image can be successfully achieved under even 25% sampling rate without an additional filter circuit. This work opens an avenue toward the fabrication of high detectivity Schottky photodiode for high quality color SPI.

Enhanced near-infrared photodetection via whispering gallery modes in the wave-shaped sidewall silicon nanopillar arrays.

We demonstrate a near-infrared (NIR) photodiode (PD) by using a wave-shaped sidewall silicon nanopillars (WS-SiNPs) structure. The designed WS sidewall nanostructure increases the horizontal component of incident light and induces multiple whispering-gallery modes with low-quality factor, which increases the light absorption path. Thus, the WS-SiNP PD shows improved spectral responsivity and external quantum efficiency over straight sidewall silicon nanopillars and planar PDs in the NIR region. Especially, the peak responsivity of 0.648 A/W is achieved at a wavelength of 905 nm, which is used for light detection and ranging. Comparison with commercial photodiodes demonstrates the good optoelectrical characteristics of the fabricated device. The improved characteristics are validated by 3D finite differential time domain simulations. Based on these results, our device shows the potential for cost-effective Si-based optoelectronic devices to be utilized in future advanced applications.

Biomimetic Flexible High‐Sensitivity Near‐Infrared II Organic Photodetector for Photon Detection and Imaging

AbstractThe flexible near‐infrared (NIR) organic photodetector is an essential prerequisite for the next‐generation visual system for accurate information identification. However, prevailing limitations in NIR organic photodetectors, including high noise, weak responsivity, and low detectivity, directly impede the translation to practical applications. Herein, ultranarrow bandgap acceptors, featuring a 2D highly electron‐donating central core (DTPC), named as YZ and YZ1, are designed and synthesized for NIR organic photodetectors. It is found that the introduction of highly rigid DTPC effectively reduces energetic disorder in active films. Moreover, extending the end conjugation not only broadens the absorption spectrum but also diminishes trap states and improves charge transport. Consequently, the YZ1‐based organic photodetector exhibits an impressive detection range from 300 to 1050 nm with a high responsivity of 0.27 A W−1 at 1000 nm and specific detectivity of 9.24 × 1013 Jones, comparable to commercial silicon photodiodes. Inspired by biological eyes, large‐area parallelly independent photodetector arrays (2000 pixels) for an artificial vision system are fabricated, which enables a clear matter identification in the NIR region. These findings and results simultaneously provide critical insights into molecular design and bridge the gap between material science and device engineering, accelerating the application of NIR organic photodetectors in next‐generation wearable optoelectronics.

Radon detector development using a PIN photodiode

An active device for radon detection in air has been developed in the frame of a project carried out by the Physics Department of the University of Torino with the aim to create a monitoring network of radon concentration in the University workplaces.&#x0D; The device uses a commercial planar photodiode, sensitive to alpha particles, and a dedicated electronic chain integrated in an approx. 30 mm by 50 mm printed circuit board (PCB), designed in order to minimize the power consumption. The device can be used not only as alpha particles counter (using the digital output) but also for alpha spectroscopy, connecting the analog signal output from the shaper amplifier to a Multichannel Analyzer (MCA).&#x0D; In this paper, the first prototype of the detector will be presented with the preliminary experimental results.&#x0D; The spectroscopic performances of the device were tested, integrating the sensor in a commercial aluminum box and acquiring the alpha particle spectrum from a calibration source and from rock samples used as radon sources.&#x0D; The radon sensitivity of the detector, in terms of (Counts per hour)/(Bq m−3), was assessed by the comparison with a calibrated commercial radon detector (RAD7 Durridge Inc.).&#x0D; In conclusion, the final prototype will be presented. It is characterized by a new 3d printed plastic case in black PA12 for light shielding, covered by a conductive paint in order to minimize the electromagnetic noise.

Low-Power Organic LED Fabricated by a Novel Solution-Based Process for Photoplethysmography Sensing

Power consumption level of electronic devices has been always considered as an important factor for a wide range of applications. In this study, a novel fabrication step, namely pre-drying, applicable to solution-based fabrication processes is proposed to minimize the overall power consumption of organic light-emitting diodes (OLEDs). The pre-dry step allows the solution to dwell on the substrate for a certain short time before the spin coater is turned on. It is experimentally shown that the pre-drying step for OLEDs with the hole transfer layer (HTL) of Poly (3,4-ethylenedioxythiophene):poly(styrene sulfonate) (PEDOT:PSS) can reduce the ohmic-loss by a factor of 2.41, in addition to reducing the turn-on voltage by 0.9 V and increasing the luminance 1.3 times at 15 V in comparison to the fabricated OLED without pre-drying step. To further minimize the power consumption of OLEDs, it is proposed to replace PEDOT:PSS with copper(I) thiocyanate (CuSCN) as HTL, which can be deposited by a solution fabrication process including the pre-drying step. A comparison among the fabricated OLEDs with the pre-dried HTLs made of CuSCN and PEDOT:PSS indicates that the generated luminance increases by a factor of 4.28 from 2.8 to 12 kcd/m <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> for an identical voltage of 11 V. Due to the superior performance of the proposed OLED based on the pre-dried HTL of CuSCN, its behavior as a light source for photoplethysmography (PPG) sensing systems is surveyed. In this context, the PPG sensor is implemented in the form of a flexible-hybrid sensor system in which the fabricated OLED and a commercial photodiode are housed on a flexible substrate. Results confirm that the implemented flexible-hybrid PPG sensor operating in reflectance mode can acquire high quality PPG signals with relatively low power consumption and accurately estimate heart rate. The competency of the proposed OLED as a low-power solution for PPG sensor technology is highlighted by comparing its performance with the state of the art.

Range-resolved detection of boundary layer stable water vapor isotopologues using a ground-based 1.98 µm differential absorption LIDAR.

This paper presents a first demonstration of range-resolved differential absorption LIDAR (DIAL) measurements of the water vapor main isotopologue H2 16O and the less abundant semi-heavy water isotopologue HD16O with the aim of determining the isotopic ratio. The presented Water Vapor and Isotope Lidar (WaVIL) instrument is based on a parametric laser source emitting nanosecond pulses at 1.98 µm and a direct-detection receiver utilizing a commercial InGaAs PIN photodiode. Vertical profiles of H2 16O and HD16O were acquired in the planetary boundary layer in the suburban Paris region up to a range of 1.5 km. For time averaging over 25 min, the achieved precision in the retrieved water vapor mixing ratio is 0.1 g kg-1 (2.5% relative error) at 0.4 km above ground level (a.g.l.) and 0.6 g kg-1 (20%) at 1 km a.g.l. for 150 m range bins along the LIDAR line of sight. For HD16O, weaker absorption has to be balanced with coarser vertical resolution (600 m range bins) in order to achieve similar relative precision. From the DIAL measurements of H2 16O and HD16O, the isotopic abundance δD was estimated as -51‰ at 0.4 km above the ground and -119‰ in the upper part of the boundary layer at 1.3 km a.g.l. Random and systematic errors are discussed in the form of an error budget, which shows that further instrumental improvements are required on the challenging path towards DIAL-profiling of the isotopic abundance with range resolution and precision suitable for water cycle studies.

Development of photo-diodes for Pohang-Accelerator-Laboratory X-ray free-electron laser

The Pohang-Accelerator-Laboratory X-ray free-electron laser (PAL-XFEL) provides intense ultra-short X-ray pulses via a self-amplified spontaneous emission (SASE) process. Since fluctuations are induced by the intrinsic characteristics of the SASE process, we designed and fabricated photo-diodes (PDs) to be used in quadrant beam position and pop-in monitoring systems for measuring intensity and position, and beam size, respectively. Six 500μm-thick high-resistivity silicon wafers were used for different fabrication processes to vary the thicknesses of bias electrode and anti-reflective coating layers optimized for the quantum efficiency (QE) at typical wavelengths of 266 and 400 nm used for pump–probe experiments at the PAL-XFEL. In this paper, we present the electrical characteristics, QE, signal-to-noise ratio, energy resolution of the fabricated PDs, and compared them with those of commercial PD.

Towards a Counting Point Detector for Nanosecond Coherent X-ray Science

We present the technical realization of a high-speed hard X-ray single-photon counting-detection scheme based on a commercial avalanche silicon photodiode and high-speed oscilloscope. The development is motivated by the need to perform pulse-resolved photon-correlation and pump-probe studies at synchrotron sources with densely packed pulse patterns that result in high repetition rate pulses on the order of hundreds of MHz. Commissioning experiments are performed at the 1C PAL-KRISS beamline at PLS-II of South Korea operating at a burst mode maximum repetition rate of 500 MHz. In such a high count-rate measurement, detector dead-time can lead to a distortion of counting statistics. We are able to model the counting behavior of our detector under these conditions with a detector dead-time comparable to time between X-ray pulses, implying that nanosecond X-ray photon correlation spectroscopy should be possible at diffraction-limited light sources.

Performance Measurements of Photodiodes for X-Ray Detection

The X-ray free-electron laser (XFEL) at the Pohang Accelerator Laboratory (PAL), Pohang, South Korea, provides X-ray energies of up to 15 keV depending on the experimental purpose. Silicon-based devices have been used as diagnostic devices and detectors for X-rays in experimental stations. Considering recent domestic and international circumstances, developing silicon-based detectors in-house is necessary. We developed a silicon p-intrinsic-n (PIN) photodiode (PD) for X-ray detection, and its performance was investigated and compared with that of a commercial PD used in the PAL-XFEL. The PD was designed to be 1 cm <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\times1$ </tex-math></inline-formula> cm in size, and it used the junction side for signal readout and the ohmic side for X-ray entrance. Considering the absorption length of 12-keV X-rays suitable for crystallography, a 500- <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$ {\mu }\text{m}$ </tex-math></inline-formula> -thick silicon wafer with a high resistivity was used for PD fabrication. It has a guard ring, an n+ edge field shaper, and an antireflection coating (ARC) and is available in four different types based on the metal structure of the junction and ohmic sides. We present here the electrical characteristics of the PDs. The depletion voltage at which the bulk of the PD is fully depleted was determined to be 119.7 ± 8.2 V from bulk capacitance measurements, and the operation voltage of the PD was set to 200 V. PDs with leakage currents less than 30 nA/cm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> at the operation voltage were chosen for performance measurements. The signal-to-noise ratio (SNR) with a Sr-90 radioactive source corresponding to the minimum ionizing particle (MIP) and the quantum efficiency (QE) for wavelengths of 300–1000 nm were measured. Beam tests were conducted at the PAL-XFEL using 600-, 900-, and 1200-eV X-rays where the responses to ultrahigh brightness and ultrashort X-ray pulses were checked. The energy resolutions were measured using gamma-ray radioactive sources, Am-241 (59.5 keV), and Ba-133 (31.0 and 81.0 keV). The differences in performance among the PD types are presented herein in terms of the electrical characteristics, SNR, QE, response to X-ray pulses, and energy resolutions. The results of the fabricated PDs were also compared with those of a commercial PD.

Characterization of a thin photodiode as a routine dosimeter for low-dose radiation processing applications

The characterization of a dosimetry system based on a commercial PIN photodiode as a routine dosimeter in a 60Co industrial facility is reported. The main parameters of the dose rate response (repeatability, reproducibility, and angular dependence) and the dose response (dependence on both dose rate and accumulated dose) are investigated. The results obtained, within a dose rate range of 3.7–52.8 Gy/h and doses up to 200 Gy, fully adhere to the standard protocols established for radiation processing dosimetry. The diode performance as a routine dosimeter is validated by the good overall agreement with radiochromic films and alanine dosimetry.

Ultrasensitive, flexible perovskite nanowire photodetectors with long‐term stability exceeding 5000 h

AbstractPhotodetectors (PDs) based on perovskite nanowires are among the most promising next‐generation photodetection technologies; however, their poor long‐term stability is the biggest challenge limiting their commercial application. Herein, an ionic liquid, 1‐butyl‐3‐methylimidazolium tetrafluoroborate (BMIMBF4), is incorporated as an additive into methylammonium lead triiodide (MAPbI3) nanowires; this not only effectively passivates defects to inhibit perovskite degradation but also leads to the formation of nanochannels, enabling fast charge transfer. As a result, the long‐term stability and performance of MAPbI3 nanowires are considerably improved. The detectivity, linear detection range, and noise equivalent power of the MAPbI3 nanowire PD reach 2.06 × 1013 Jones, 160 dB, and 1.38 × 10−15 W Hz−1/2, respectively, comparable to the highest performance of perovskite nanowire PDs reported to date. Moreover, the unencapsulated PD can maintain 100% of its initial performance after being exposed to an open‐air environment for more than 5000 h, establishing it as the most stable perovskite nanowire PD reported to date. Notably, the PD exhibits improved diffuse reflection imaging ability when compared with commercial silicon photodiode S2386. This study provides a new strategy for constructing sensitive, stable, and flexible perovskite PDs and will accelerate their commercial application in the future.image

Weyl-Semimetal TaIrTe4/Si Nanostructures for Self-Powered Schottky Photodetectors

Weyl semimetal-based photodetectors have attracted great attention due to their high performance in fast, self-powered, and ultra-broad-band photodetection. However, the inherent large dark current of the semimetal hinders further improvement of their performance. Thus, it is urgent to utilize a van der Waals (vdW) heterojunction strategy to effectively decrease the dark current and separate the carriers. Herein, a vertical Schottky junction photodetector based on Weyl semimetal TaIrTe4 and n-Si nanostructures has been studied. The junction presents a high photoresponsivity of 910 mA W–1, a specific detectivity of ∼1.04 × 1011 jones, and a fast response speed of 15.1/18.2 μs under 808 nm irradiation. Furthermore, a stable and reproducible broad-band detection (325–2000 nm) is achieved, due to the efficient NIR light absorption of TaIrTe4. In particular, the device presents impressive responsivities of 14/1.32/0.45 mA W–1 under 1310/1550/2000 nm light, respectively. Notably, these excellent performances of the TaIrTe4/Si nanostructures are superior to those of most of the previously explored 2D materials/Si-based devices and are comparable to those of several commercial silicon photodiode sensors. It is believed that the above results can provide ideas for the research of Weyl semimetals in the application of high-performance nanoscale optoelectronic devices.