CMOS Bandgap Voltage Reference Research Articles

CMOS bandgap voltage reference circuit for supply voltages down to 0.6 V

A CMOS bandgap voltage reference (BVR) circuit is proposed that operates at power supply voltages down to 0.6 V. The BVR is designed in a commercially available 0.13 µm digital CMOS technology. No analogue process options are required.

A sub-1-V 15-ppm/°C CMOS bandgap voltage reference without requiring low threshold voltage device

A sub-1-V CMOS bandgap voltage reference requiring no low threshold voltage device is introduced in this paper. In a CMOS technology with V/sub thn/ /spl ap/ |V/sub thp/| /spl ap/ 0.9 V at 0/spl deg/C, the minimum supply voltage of the proposed voltage reference is 0.98 V, and the maximum supply current is 18 /spl mu/A. A temperature coefficient of 15 ppm//spl deg/C from 0/spl deg/C to 100/spl deg/C is recorded after trimming. The active area of the circuit is about 0.24 mm/sup 2/.

High-precision curvature-compensated CMOS band-gap voltage and current references

Precise CMOS band-gap voltage and current references which uses the difference of MOS source-gate voltages to perform efficient curvature compensation are proposed and analyzed. Applying the developed design strategies, band-gap voltage references (BVR) with a temperature drift below 10 ppm/°C and a power-supply drift below 10 ppm/V can be realized. For band-gap current references, both drifts can be under 15 ppm. Experimental BVR chip shows an average drift of 5.5 ppm/°C from -60°C to 150°C and 25 μV/V for supply voltages from 5 to 15 V at 25°C. Due to the use of the novel curvature-compensation technique, the circuit structure of the proposed references is simple and both chip area and power consumption are small.

A floating CMOS bandgap voltage reference for differential applications

The circuit is suitable for precision mixed-mode systems using the differential approach, especially for the case of single-supply operation. An experimental prototype, realized in a 2- mu m CMOS technology, generates a continuous-time low-impedance voltage of 2.48 V+or-24 mV before trimming. The temperature coefficient measured on 30 samples ranges from -20 to L32 p.p.m./ degrees C in the temperature range from 0 to 100 degrees C. Thanks to the differential approach, a high-frequency power supply rejection of -50 dB at 100 kHz was achieved. The active area of the chip is 1800 mil/sup 2/ and the circuit dissipates 6 mW when operated from a single 5-V supply. >

A single-chip CMOS analog front-end for high-speed modems

A single-chip analog front-end for high-speed modems has been developed in 5μ polysilicon CMOS process. The chip contains a 10-bit A/D and an 8-bit D/A converters, a novel 128-step 0.375 dB/step programmable gain stage, 20-step 1dB/step programmable attenuator, switched-capacitor and active RC low-pass and high-pass filters for the receive and transmit directions, and all the associated TTL level compatible control logic. A CMOS band-gap voltage reference is shared between the receiver and transmitter. The chip, housed in 40-pin plastic package, is 223×219 mil2 and dissipates 120 mW using ±5V supplies.

A low-voltage CMOS bandgap reference

The CMOS bandgap voltage reference described here uses the bipolar substrate-transistor and the bipolar-like source-to-drain transfer characteristics of MOS transistors in weak inversion to implement a voltage source that is proportional to absolute temperature (PTAT). A first version of PTAT source is derived from a circuit described previously. A second version is based on a novel cell that can be stacked to obtain the desired voltage. Both versions operate down to 1.3 V with a current drain below 1 /spl mu/A. A stability of 3 mV over 100/spl deg/C has been obtained with a few nonadjusted samples. Experimental results suggest some possible improvements to extend this stability to every circuit.

A CMOS bandgap voltage reference

A simple micropower CMOS bandgap voltage reference is described. The reference utilizes MOS devices operating in the weak inversion region in conjunction with a process compatible bipolar device. The voltage reference is insensitive to threshold and mobility variations and is independent of the slope factor which characterizes weak inversion.