Two-dimensional (2D) materials have attracted attention since the discovery of graphene in 2004. However, the zero band gap limits its application in the field of electronic devices. Opening graphene's band gap has become one of the most important subjects. Nitrogenated holey graphene (NHG) has been successfully synthesized in 2015. It has attracted much attention because of semiconducting properties. However, there is still a lack of detailed study on phosphorated holey graphene (PHG). In this paper, the structural, electronic and adsorptive characteristics of PHG are investigated by first principles calculations. First, we investigate the structural characteristics of PHG, and compare it with the previous discoveries of NHG and graphene. The stacking behavior of PHG is studied, and the most stable stacking order is obtained. Then, we study the band structure characteristics of PHG. Impact of the biaxial strain and vacancy defects on the band structure is discussed. Finally, we investigate atomic adsorption on PHG. Atomic adsorption energy, equilibrium distance, and charge transfer are analyzed. The effect of atomic adsorption on band structure is discussed. Our investigation can provide useful information for insight into the novel 2D materials of PHG.
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