Abstract The influence of addition of H2 to sputtering ambient on the microstructural and electrical properties of AZO films deposited by r.f. magnetron sputtering at low temperature (100 °C) and high temperature (400 °C) have been investigated in comparison with each other. The grain size decreased with increase of H2 flow rate for both films deposited at 100 °C and 400 °C, but the order of decrease were different; the change of grain size for films deposited at 400 °C was more considerable compared with that at 100 °C, indicating that the addition of H2 into Ar leads to deterioration of crystalline, particularly for the films deposited at high temperature. For the AZO films prepared at comparatively low temperature around 100 °C, small addition of H2 to sputtering ambient was in favour of enhance of electrical properties of films, but for those at high temperature around 400 °C, addition of H2 was unfavourable at all. The origin of variations of microstructural and electrical properties by adding of H2 to sputtering ambient was discussed.
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