EUV extendibility: challenges facing EUV at 1x and beyond Patrick P. Naulleau, 1 Christopher N. Anderson, 1 Suchit Bhattarai, 2 Andrew Neureuther 2 Center for X-ray Optics, Lawrence Berkeley National Laboratory, Berkeley, CA, USA EECS, University of California, Berkeley, CA, USA Extreme ultraviolet chemically amplified resist performance has recently been extended to the 15-nm half pitch regime, yet line-edge roughness (LER) remains far from targets. Stochastic analysis, however, shows current LER performance to be material limited rather than photon limited. Interest in contact hole printing and contact size uniformity has dramatically increased over the past few years. As with line space printing, we find contact uniformity performance to be material limi ted rather than photon limited. Nevertheless, current resist parameters would lead to the photon noise alone exceeding the uniformity requirement by the 16-nm half pitch node with conventional mask s. The use of phase shift masks is shown to provide a significant benefit. Combining phase shift masks with relatively modest improvements in resist is predicted to lead to target performance down to 12-nm half pitch and beyond. Keyword: photoresist, extreme ultraviolet, shot noise, line-edge roughness 1. Introduction Extreme ultraviolet (EUV) lithography has now entered the pilot line phase and interest in the question of extendibility to the 1x node and beyond has greatly increased. Advanced resist testing with 0.3 numerical aperture (NA) microfield exposure tools [1,2] is now focused on extremely low-k 1 configurations and development is underway for new 0.5-NA tools [3]. Chemically amplified resist performance has recently been extended to the 15-nm half pitch regime, yet line-edge roughness (LER) remains far from targets. Here we explore the importance of photon limits relative to materials limits for the current LER values. This analysis is also extended to contact critical dimension uniformity (CDU). As we push to the deep 1x regime, resist performance cannot be considered in isolation of aerial image performance. Extending EUV to the low-k 1 regime will potentially come with significant implications on aerial image performance and thus variability. When exploring variability limits, mask and system optimization should be considered. 2. Resolution status Since achieving 16-nm half pitch (HP) performance in chemically amplified (CA) resists in 2011, progress in ultimate resolution has stalled. Figure 1 shows a plot of EUV resist resolution as a function of time. Despite the lack of progress in ultimate resolution, a sensitivity improvement from 30 mJ/cm 2 to 20 mJ/cm 2 was made between 2011 and 2012, however, at the cost of LER. Figure 1. Progress in EUV chemically amplified resist resolution as a function of time.
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