Cell Structure Of Glass Research Articles

Observation of neodymium electroluminescence

Organic electroluminescence devices using a neodymium(III) complex as an emitting layer were fabricated. The cell structure of glass substrate/indium–tin–oxide/N,N′-diphenyl-N,N′-di(m-tolyl)-benzidine/tris(dibenzoylmethanato)(monobathophenanthroline)neodymium(III) complex/tris(8-quinolinolato)aluminum(III) complex/Mg:Ag was employed. Sharp near-infrared emission bands assigned to f–f transitions of neodymium ion were obtained at dc bias voltage of over 15 V.

White light-emitting organic electroluminescent devices using the poly(N-vinylcarbazole) emitter layer doped with three fluorescent dyes

White light-emitting electroluminescent devices were fabricated using poly(N-vinylcarbazole) (PVK) as a hole-transporting emitter layer and a double layer of 1,2,4-triazole derivative (TAZ) and tris(8-quinolinolato)aluminum(III) complex (Alq) as an electron transport layer. The PVK layer was doped with fluorescent dyes such as blue-emitting 1,1,4,4-tetraphenyl-1,3-butadiene, green-emitting coumarin 6, and orange-emitting DCM 1. A cell structure of glass substrate/indium-tin-oxide/doped PVK/TAZ/Alq/Mg:Ag was employed. White emission covering a wide range of the visible region and a high luminance of 3400 cd/m2 were obtained at a drive voltage of 14 V.

Bright blue electroluminescence from poly(N-vinylcarbazole)

Electroluminescent devices were fabricated using poly(N-vinylcarbazole) (PVK) as a hole-transporting emitter layer and a double layer of 1,2,4-triazole derivative (TAZ) and tris(8-quinolinolato)aluminum(III) complex (Alq) as an electron transport layer. A cell structure of glass substrate/indium-tin-oxide/PVK/TAZ/Alq/Mg:Ag was employed. In this cell structure, carrier injection from the electrodes to the PVK layer and concomitant electroluminescence from PVK were observed. Blue emission peaking at 410 nm and a luminance of 700 cd/m2 were achieved at a drive voltage of 14 V.

Molecularly Doped Polymers for Organic Electroluminescent Devices

Abstract Electroluminescent devices were fabricated using poly(methyl methacrylate) (PMMA) molecularly doped with triphenyldiamine derivative and tris(8-quinolinolato)aluminum(III) complex (Alq). A cell structure of glass substrate/indium-tin-oxide/doped PMMA/Mg: Ag was employed. Green emission with luminance of 920 cd/m2 was achieved at a drive voltage of 17 V. The EL color was tuned to blue-green and yellow-orange by further doping the PMMA layer with suitable organic dyes.

Plasma‐polymerized carbon disulfide films as a hole transport layer in organic electroluminescent devices

AbstractElectroluminescent devices were fabricated using plasma‐polymerized carbon disulfide films, poly(CS2), and tris(8‐quinolinolato)aluminum(III) complex, Alq, as the hole transport layer and the emitting layer, respectively. A cell structure of glass substrate/indium–tin–oxide/poly(CS2/Alq/Mg/Ag) was employed. Smooth hole injection from the electrode through the poly(CS2) layer and concomitant electroluminescence from the Alq layer were observed. Green emission with a luminance of 250 cd/m2 was achieved at a drive voltage of 14 V.

Organic electroluminescent devices based on molecularly doped polymers

Electroluminescent devices were fabricated using poly(methyl methacrylate) (PMMA) molecularly doped with triphenyldiamine derivative and tris(8-quinolinolato)aluminum(III) complex (Alq). A cell structure of glass substrate/indium–tin–oxide/doped PMMA/Mg:Ag was employed. Carrier injection from the electrodes to the doped PMMA layer through the dopants and concomitant electroluminescence from Alq were observed. Green emission with luminance of 920 cd/m2 was achieved at a drive voltage of 17 V.

Poly(methylphenylsilane) film as a hole transport layer in electroluminescent devices

Electroluminescent devices were fabricated using poly(methylphenylsilane) and 8-hydroxyquinoline aluminum complex as the hole transport layer and the emitting layer, respectively. The cell structure of glass substrate/indium-tin-oxide/hole transport layer/emitting layer/Mg/Ag was employed. Smooth hole injection from the electrode through the polymer layer and concomitant efficient electroluminescence from the emitting layer were observed. Green emission with a luminance of over 1000 cd/m2 was achieved at a current density of 100 mA/cm2.

Electroluminescence from Polysilane Film Doped with Europium Complex

Abstract Electroluminescent devices with poly(methylphenylsilane) film doped with Eu3+ complexes were fabricated. The cell structure of glass substrate/indium-tin-oxide/polysilane/electron transport layer/Mg/Ag was employed. Sharp red electroluminescence of europium ion was obtained at dc bias voltage of over 12 V.