Ce 4f Electrons Research Articles

Harnessing 4f Electron Itinerancy for Integrated Dual-Band Redox Systems Boosts Lithium-Oxygen Batteries Electrocatalysis.

In-depth comprehension and manipulation of band occupation at metal centers are crucial for facilitating effective adsorption and electron transfer in lithium-oxygen battery (LOB) reactions. Rare earth elements play a unique role in band hybridization due to their deep orbitals and strong localization of 4felectrons. Herein, we anchor single Ce atoms onto CoO, constructing a highly active and stable catalyst with d-fa dual-band redox center. It is discovered that the itinerant behavior of 4felectrons introduces an enhanced spin-orbit coupling effect, which facilitates ideal σ/π bonding and flexible adsorption between the Ce/Co active sites and *O. Simultaneously, the injection of localized Ce 4felectrons strengthens the orbital bonding capacity of Co-O, effectively inhibits the dissolution of Co sites and improves the structural stability of the cathode material. Bracingly, the Ce1/CoO-based LOB exhibits an ultra-low charge-discharge polarization (0.46 V) and stable cyclic performance (1088 hours). This work breaks through the traditional limitations in catalyst activity and stability, providing new strategies and theoretical insights for developing high-performance LOBs powered by rare-earth elements.

Investigation of optical properties of Ce and Eu-doped Gd2SiO5 insights from GGA + U calculations

Gadolinium silicate, (Gd2SiO5) co-doped with Ce and Eu has been found to exhibit enhanced luminescence efficiency, which makes it a promising material for use in scintillators and phosphors. It has excellent scintillation properties such as high density and high Zeff. In this study, we used density functional theory (DFT) calculations within the Wien2k software to investigate the effect of Ce and Eu concentration and native defects on the electronic structure and optical properties of Ce and Eu co-doped Gd2SiO5. We utilized the DFT + U method to treat the localized 4f electrons of Ce and Eu. Our results indicate that the electronic structure and optical properties of Ce and Eu co-doped Gd2SiO5 are significantly affected by the concentration of the dopants and presence of native defects. We found that increasing the concentration of Ce and Eu dopants leads to a shift in the bandgap to lower energies, resulting in enhanced absorption and emission spectra. Moreover, our calculations reveal that presence of oxygen vacancies and Gd interstitials can induce new defect levels in the bandgap, which may affect the luminescence properties of the material. Our study provides valuable insights into the atomic-level mechanisms that govern the luminescence properties of Ce and Eu co-doped Gd2SiO5 which can aid in the design and optimization of luminescent materials for various applications.

Ce-4f as an electron-modulation reservoir weakening Fe-O bond to induce iron vacancies in CeFevNi hydroxide for enhancing oxygen evolution reaction

Designing novel rare-earth-transition metal composites is at the forefront of electrocatalyst research. However, the modulation of transition metal electronic structures by rare earths to induce vacancy defects and enhance electrochemical performance has rarely been reported. In this study, we systematically investigate the mechanism by which Ce-4f electron modulation weakens the Fe-O bond, thereby altering the electronic structure in CeFevNi hydroxide to improve oxygen evolution reaction (OER) performance. Theoretical calculations and experimental characterizations reveal that Ce-4f orbitals function as electron-modulation reservoirs, capable not only of retaining or donating electrons but also of influencing the material's electronic structure. Moreover, Ce-4f bands optimize the Fe lower Hubbard bands (LHB) and O-2p bands, leading to weakened Fe-O bonds and the formation of cationic vacancies. This change results in the upshift of the d-band center at the active sites, favoring the reaction energy barrier for oxygen intermediates in the OER process. The synthesized catalyst demonstrated an overpotential of 201 mV at 10 mA cm−2 and a lifetime exceeding 200 h at 100 mA cm−2 under alkaline conditions. This work offers a proof-of-concept for the application of the mechanism of rare earth-induced transition metal vacancy defects, providing a general guideline for the design and development of novel highly efficient catalysts.

Electronic structure of CeCu4In from band structure calculations and X-ray photoelectron spectroscopy

We present a combined new experimental and theoretical study of the electronic structure for the heavy fermion CeCu4In based on X-ray photoelectron spectroscopy (XPS) data and ab-initio band structure calculations. The compound crystallizes in the orthorhombic CeCu4.38In1.62 type of structure (space group Pnnm). Below the Fermi energy the total density of states contains mainly 3d–states of Cu atoms that hybridized with the Ce 4f electronic states. The Ce core-level XPS spectra point to a stable trivalent configuration of Ce atoms in CeCu4In, consistently with the magnetic susceptibility data. For more detailed information about electronic states the fully relativistic band structure was calculated within the density functional theory (DFT) for the first time. Based on these calculations we present calculated photoemission spectra, which very well reproduce the experimental ones. The Fermi level is located at a deep decrease in the density of electronic states and reaches a value of 3.69 states/(eV f.u.). This value is much smaller than the one obtained experimentally, which indicates the importance of many-body effects, which are not properly taken into account in ab-initio calculations. The valence band is formed mainly by Cu(3d) electrons with a small contribution of Ce(4f) electrons in the immediate vicinity of the Fermi level.

Synthesis and superconductivity in yttrium-cerium hydrides at high pressures

Further increasing the critical temperature and/or decreasing the stabilized pressure are the general hopes for the hydride superconductors. Inspired by the low stabilized pressure associated with Ce 4f electrons in superconducting cerium superhydride and the high critical temperature in yttrium superhydride, we carry out seven independent runs to synthesize yttrium-cerium alloy hydrides. The synthetic process is examined by the Raman scattering and X-ray diffraction measurements. The superconductivity is obtained from the observed zero-resistance state with the detected onset critical temperatures in the range of 97-141 K. The upper critical field towards 0 K at pressure of 124 GPa is determined to be between 56 and 78 T by extrapolation of the results of the electrical transport measurements at applied magnetic fields. The analysis of the structural data and theoretical calculations suggest that the phase of Y0.5Ce0.5H9 in hexagonal structure with the space group of P63/mmc is stable in the studied pressure range. These results indicate that alloying superhydrides indeed can maintain relatively high critical temperature at relatively modest pressures accessible by laboratory conditions.

Systematic Characterization of Electronic Metal-Support Interactions in Ceria-Supported Pt Particles.

Electronic metal-support interactions affect the chemical and catalytic properties of metal particles supported on reducible metal oxides, but their characterization is challenging due to the complexity of the electronic structure of these systems. These interactions often involve different states with varying numbers and positions of strongly correlated d or f electrons and the corresponding polarons. In this work, we present an approach to characterize electronic metal-support interactions by means of computationally efficient density functional calculations within the projector augmented wave method. We describe Ce3+ cations with potentials that include a Ce4f electron in the frozen core, overcoming prevalent convergence and 4f electron localization issues. We systematically explore the stability and chemical properties of different electronic states for a Pt8/CeO2(111) model system, revealing the predominant effect of electronic metal-support interactions on Pt atoms located directly at the metal-oxide interface. Adsorption energies and the reactivity of these interface Pt atoms vary significantly upon donation of electrons to the oxide support, pointing to a strategy to selectively activate interfacial sites of metal particles supported on reducible metal oxides.

Electronic Structure of Heteronuclear Cerium-Platinum Clusters.

Beyond the now well-known strong catalyst-support interactions reported for ceria-supported platinum catalysts, intermetallic Ce-Pt compounds exhibit fascinating properties such as heavy fermion behavior and magnetic instability. Small heterometallic Ce-Pt clusters, which can provide insights into the local features that govern bulk phenomena, have been less explored. Herein, the anion photoelectron spectra of three small mixed Ce-Pt clusters, Ce2OPt-, Ce2Pt-, and Ce3Pt-, are presented and interpreted with supporting density functional theory calculations. The calculations, which are readily reconciled with the experimental spectra, suggest the presence of numerous close-lying spin states, including states in which the Ce 4f electrons are ferromagnetically coupled or antiferromagnetically coupled. The Pt center is consistently in a nominal -2 charge state in all cluster neutrals and anions, giving the Ce-Pt bond ionic character. Ce-Pt bonds are stronger than Ce-Ce bonds, and the O atom in Ce2OPt- coordinates only with the Ce centers. The energy of the singly occupied Ce-local 4f orbitals relative to the Pt-local orbitals changes with cluster composition. Discussion of the results includes potential implications for Ce-rich intermetallic materials.

Itinerant to relocalized transition of f electrons in the Kondo insulator CeRu4Sn6

The three-dimensional electronic structure and the nature of Ce 4f electrons of the Kondo insulator CeRu4Sn6 are investigated by angle-resolved photoemission spectroscopy, utilizing tunable photon energies. Our results reveal (i) the three-dimensional k-space nature of the Fermi surface, (ii) the localized-to-itinerant transition of f electrons occurs at a much high temperature than the hybridization gap opening temperature, and (iii) the "relocalization" of itinerant f electrons below 25 K, which could be the precursor to the establishment of magnetic order.

Possible Heavy-Fermion State in \(\mathcal{P}\mathcal{T}\)-Symmetric Antiferromagnet CeMnSi

The magnetic properties of CeMnSi with a tetragonal crystal structure were investigated for the first time using single crystals. CeMnSi exhibits an antiferromagnetic (AFM) ordering of Mn-3d electrons at TN = 242 K, whereas Ce-4f electrons remain paramagnetic down to the lowest temperature with the following characteristic behaviors: a moderately enhanced Sommerfeld coefficient, a steep decrease in electrical resistivity at low temperatures, and an almost temperature-independent magnetic susceptibility at low temperatures despite a Curie–Weiss increase at high temperatures. From these results, we propose that a noble correlated electron state is realized even in the Mn-AFM ordered state and is protected by the space–time (\(\mathcal{P}\mathcal{T}\)) inversion symmetry inherent in the Mn-AFM ordering. We also show systematic changes in the lattice parameters of RTSi (R = rare-earth elements, T = Mn, Fe, and Co), providing the basis for understanding the unique electronic properties of CeTSi.

The effect of stress on electronic structure and optical properties of CeO2

The effect of stress on the electronic structure and optical properties of CeO2 is studied using the ultrasoft pseudopotential plane wave method based on density functional theory. The results show that the band gap decreases quasi-linearly with the negative stress increasing and increases quasi-linearly with the increase of positive stress. Combining with the density of states (DOS) analysis, the main reason for the change of the band gap is Ce 4f electrons are significantly affected by the stress. When the stress changes from −25 to 30 GPa, the DOS of Ce 4f is far away from the Fermi level and gradually decreases. The influence of stress on optical properties mainly shows two obvious features. The first feature is that the optical properties are gradually appeared as the stress changes from −25 to 30 GPa and the optical edges are moved to high energy direction, in the energy range of 0–3 eV. Another feature is that there is an obvious peak value under the stress of −25–0 GPa, but does not significantly change under the stress of 0–30 GPa, in the energy range of 3–6 eV. The results show that the negative stress enhances the electronic transition, which is beneficial to improve the utilization of light.

Exploring s-d, s-f, and d-f Electron Interactions in AgnCe+ and AgnSm+ by Chemical Reaction toward O2.

We investigate gas-phase reactions of free AgnCe+ and AgnSm+ clusters with oxygen molecules to explore s-d, s-f, and d-f electron interactions in the finite size regime; a Ce atom has a 5d electron as well as a 4f electron, whereas a Sm atom has six 4f electrons without 5d electrons. In the reaction of AgnCe+ (n = 3-20), the Ce atom located on the cluster surface provides an active site except for n = 15 and 16, as inferred from the composition of the reaction products with oxygen bound to the Ce atom as well as from their relatively high reactivity. The extremely low reactivity for n = 15 and 16 is due to encapsulation of the Ce atom by Ag atoms. The minimum reactivity observed at n = 16 suggests that a closed electronic shell with 18 valence electrons is formed with a delocalized Ce 5d electron, while the localized Ce 4f electron does not contribute to the shell closure. As for AgnSm+ (n = 1-18), encapsulation of the Sm atom was observed for n ≥ 15. The lower reactivity at n = 17 than at n = 16 and 18 implies that an 18-valence-electron shell closure is formed with s electrons from Ag and Sm atoms; Sm 4f electrons are not involved in the shell closure as in the case of AgnCe+. The present results suggest that the 4f electrons tend to localize on the lanthanoid atom, whereas the 5d electron delocalizes to contribute to the electron shell closure.

The influence of atomic delocalization on dynamic behavior in Ce-Ni metallic melts

In Ce-Ni melts, the atomic self-diffusion coefficient decreasing nonlinearly as the Ce content decrease is observed via the ab initio molecular dynamics simulation. A mutation appears in the self-diffusion coefficient curve when the Ce content is <33% (=Ce1Ni2). By analysing the topologic and electronic structures, this dynamic mutation is caused by the delocalization of Ce-4f electron. For Ce atom with high localized degree, the electron exchange with Ni atoms is soft. It is easy to form unstable polyhedra with coordination number between 13 and 14, which leads to faster dynamic behavior. On the contrary, Ce atom with low localized degree has slower dynamic behavior. These two types of Ce atoms vary in volume greatly and affect the atomic stacking effect. In Ce-rich and Ni-rich melts, the self-diffusion coefficient changes visibly due to the change of stacking effect. The localization degree of 4f-electron depending on composition changes are rarely observed in binary melts. This provides a good model for the further study of the electronic structures, magnetic and dynamic behavior of Ce-based melts.

Temperature‐dependent electronic properties for 4f states in cerium mononitride

AbstractIn order to elucidate the temperature‐dependent occupancy number of Ce 4f electrons and valence state of Ce ions in cerium mononitride (CeN), we perform an ab initio calculation by using a many‐body scheme combing density functional theory with dynamical mean field theory, taking into account the spin‐orbit coupling (SOC) interaction and on‐site Coulomb repulsion between Ce 4f electrons. Results demonstrate that Ce 4f j = 5/2 and j = 7/2 manifolds undergo insulating‐metallic transition with increasing of temperature. Ce 4f‐conduction electrons hybridization, f‐f correlation, SOC interaction and final state effects yield a complicated spectrum function in CeN. Ce 4f atomic configuration transition and hybridization might be responsible for the temperature‐dependent occupancy number of Ce 4f electrons and the mixed‐valence state in CeN. A fact that localization of Ce 4f electrons, that is, 4f1 configuration or Ce3+ valence, increases with increasing of temperature could account for the experimentally observed lattice constant versus temperature data. Finally, the so‐called quasiparticle band structure is also discussed for comparison with experimental angle‐resolved photoemission spectrum.

Angle-resolved photoemission spectroscopy study of the (101) surface of the Kondo insulator CeNiSn

The electronic structure of CeNiSn, which is considered a possible topological Kondo insulator, has been investigated by employing synchrotron radiation excited angle-resolved photoemission spectroscopy (ARPES). We have found that the easy cleavage plane in CeNiSn is (101), for which we have investigated the Fermi surface (FS) and band structures. The measured FS and ARPES for the (101) plane are described well by the calculated FS and band structures, obtained from the DFT calculations. The measured ARPES bands and photon energy map show that the metallic states crossing the Fermi level have the 3D nature, casting a negative suspicion for the existence of the topological surface states of the 2D character in CeNiSn. The Ce 4f Kondo resonance peak is observed in Ce 4d → 4f resonant photoemission spectroscopy, suggesting the importance of the Ce 4f electrons in determining the temperature-dependent topological electronic structure of CeNiSn.

Temperature-independent localization of Ce 4f electrons in cerium monoarsenide

In order to reveal the valence state of Ce ions and the occupancy number of Ce 4f electrons versus temperature in cerium monoarsenide (CeAs), we perform an ab initio calculation by using a many-body scheme combing density functional theory (DFT) with dynamical mean field theory (DMFT), taking into account the spin-orbit coupling (SOC) interaction and on-site Coulomb repulsion between Ce 4f electrons. Results demonstrate that Ce 4f j=5/2 and j=7/2 manifolds exhibit the metallic and insulating characters, respectively, irrespective of temperature. Ce 4f-4f correlation, Ce 4f-conduction electrons hybridization, SOC interaction and final state effects yield a complicated spectrum function for CeAs. Coupling of 4f atomic configuration transition, hybridization and temperature does not change the localized Ce 4f regime in CeAs. Finally, momentum-resolved electronic spectrum function is also discussed for comparison with experimental angle-resolved photoemission spectrum (ARPES).

The 4f-Hybridization Strength in Ce m Mn In3m+2n Heavy-Fermion Compounds Studied by Angle-Resolved Photoemission SpectroscopySupported by the National Natural Science Foundation of China (Grant Nos. 12074436 and 11574402), and the Innovation-Driven Plan in Central South University (Grant No. 2016CXS032). J.R. and P.M.O. acknowledge support through the Swedish Research Council (VR) and the Swedish National Infrastructure for Computing (SNIC), for computing

We systemically investigate the nature of Ce 4f electrons in structurally layered heavy-fermion compounds Ce m M n In3m + 2n (with M = Co, Rh, Ir, and Pt, m = 1, 2, n = 0–2), at low temperature using on-resonance angle-resolved photoemission spectroscopy. Three heavy quasiparticle bands f 0, and , are observed in all compounds, whereas their intensities and energy locations vary greatly with materials. The strong f 0 states imply that the localized electron behavior dominates the Ce 4f states. The Ce 4f electrons are partially hybridized with the conduction electrons, making them have the dual nature of localization and itinerancy. Our quantitative comparison reveals that the –f 0 intensity ratio is more suitable to reflect the 4f-state hybridization strength.

Resonant photoemission spectroscopy of the ferromagnetic Kondo system CeAgSb2

We study the electronic structure of single crystal CeAgSb2, a low T c ferromagnetic Kondo system, using synchrotron radiation photoemission spectroscopy (PES) and x-ray absorption spectroscopy (XAS). We have carried out Ce 5s, Ce 5p, Sb 4d core level PES as well as Ce 4d–4f resonant PES of the valence band states of CeAgSb2. We also report the resonant PES behavior of Ce 5s and 5p core-levels and the simultaneous intensity suppression of Sb 4d core-level and Ag 4d valence band states across the Ce 4d–4f threshold. The Ce 4d–4f resonant valence band spectra show typical f 0 and f 1 features associated with Kondo behavior. The constant initial state spectra of the f 0 and f 1 features show maxima at different incident photon energies, arising from different relative contributions of surface and bulk character Ce 4f partial density of states. XAS across the Ce 3d–4f M-edge also shows the corresponding final state f 1 and f 2 features. The weak temperature dependence of the XAS spectra between T = 25 K and 300 K could be simulated using a full multiplet calculation combined with a simplified single-impurity Anderson model approach. The calculations confirm the Kondo screening and allows quantification of the bulk Ce 4f electron count in CeAgSb2. The Ce 5s states show an exchange splitting which reflects the local magnetic moment of Ce 4f states. The overall results characterize the bulk and surface sensitive Ce 4f states, and indicate the role of Kondo effect in forming the moderately enhanced heavy-fermion carriers in CeAgSb2.

Localized 4f-electrons in the quantum critical heavy fermion ferromagnet CeRh6Ge4

Ferromagnetic quantum critical points were predicted to be prohibited in clean itinerant ferromagnetic systems, yet such a phenomenon was recently revealed in CeRh6Ge4, where the Curie temperature can be continuously suppressed to zero under a moderate hydrostatic pressure. Here we report the observation of quantum oscillations in CeRh6Ge4 from measurements using the cantilever and tunnel-diode oscillator methods in fields up to 45 T, clearly demonstrating that the ferromagnetic quantum criticality occurs in a clean system. In order to map the Fermi surface of CeRh6Ge4, we performed angle-dependent measurements of quantum oscillations at ambient pressure, and compared the results to density functional theory calculations. The results are consistent with the Ce 4f electrons remaining localized and not contributing to the Fermi surface, suggesting that localized ferromagnetism is a key factor for the occurrence of a ferromagnetic quantum critical point in CeRh6Ge4.

Robust Fermi-Surface Morphology of CeRhIn_{5} across the Putative Field-Induced Quantum Critical Point.

We report a comprehensive de Haas-van Alphen (dHvA) study of the heavy-fermion material CeRhIn_{5} in magnetic fields up to 70T. Several dHvA frequencies gradually emerge at high fields as a result of magnetic breakdown. Among them is the thermodynamically important β_{1} branch, which has not been observed so far. Comparison of our angle-dependent dHvA spectra with those of the non-4f compound LaRhIn_{5} and with band-structure calculations evidences that the Ce 4f electrons in CeRhIn_{5} remain localized over the whole field range. This rules out any significant Fermi-surface reconstruction, either at the suggested nematic phase transition at B^{*}≈30 T or at the putative quantum critical point at B_{c}≃50 T. Our results rather demonstrate the robustness of the Fermi surface and the localized nature of the 4f electrons inside and outside of the antiferromagnetic phase.

Ce(iv)-centered charge-neutral perovskite layers topochemically derived from anionic [CeTa2O7]- layers.

Layered perovskites have been extensively investigated in many research fields, such as electronics, catalysis, optics, energy, and magnetics, because of the fascinating chemical properties that are generated by the specific structural features of perovskite frameworks. Furthermore, the interlayers of these structures can be chemically modified through ion exchange to form nanosheets. To further expand the modification of layered perovskites, we have demonstrated an advance in the new structural concept of layered perovskite “charge-neutral perovskite layers” by manipulating the perovskite layer itself. A charge-neutral perovskite layer in [CeIVTa2O7] was synthesized through a soft chemical oxidative reaction based on anionic [CeIIITa2O7]− layers. The Ce oxidation state for the charge-neutral [CeIVTa2O7] layers was found to be tetravalent by X-ray absorption fine structure (XAFS) analysis. The atomic arrangements were determined through scattering transmission electron microscopy and extended XAFS (EXAFS) analysis. The framework structure was simulated through density functional theory (DFT) calculations, the results of which were in good agreement with those of the EXAFS spectra quantitative analysis. The anionic [CeIIITa2O7]− layers exhibited optical absorption in the near infrared (NIR) region at approximately 1000 nm, whereas the level of NIR absorption decreased in the [CeIVTa2O7] charge-neutral layer due to the disappearance of the Ce 4f electrons. In addition, the chemical reactivity of the charge-neutral [CeIVTa2O7] layers was investigated by chemical reduction with ascorbic acid, resulting in the reduction of the [CeIVTa2O7] layers to form anionic [CeIIITa2O7]− layers. Furthermore, the anionic [CeIIITa2O7]− layers exhibited redox activity which the Ce in the perovskite unit can be electrochemically oxidized and reduced. The synthesis of the “charge-neutral” perovskite layer indicated that diverse features were generated by systematically tuning the electronic structure through the redox control of Ce; such diverse features have not been found in conventional layered perovskites. This study could demonstrate the potential for developing innovative, unique functional materials with perovskite structures.