The effects of built-in electric fields on the performance of intrinsic semiconductor quantum photodetectors are analysed, with emphasis on narrow bandgap Hg 1−xCd xTe devices with x = 0.215 operated at 77K. According to the proposed one-dimensional model, partial blocking of excess minority carriers may occur at the cathode end of the n-type photoconductor. resulting in enhanced current responsivity R i and reduced time response. In addition, the dependence of the detector voltage responsivity R ν upon the applied electric field E is discussed. It is shown that the ratio R ν/ R i corresponds to the measured dynamic differential resistance r d of the detector. The dependence of r d upon E is due to additional scattering of electrons (the high mobility majority carrier in HgCdTe) at high electric fields. Specific results of measurements on small-area HgCdTe photoconductive detectors are presented. Measured R i in excess of 3900 A ·W −1 and R νof the order of 5 × 10 5V·W −1 at a wavelength of 10 μm and at 77K arc reported.
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