Carrier Energy Research Articles

Enhancing the thermoelectric properties of PEDOT:PSS films through the incorporation of g-C3N4 nanosheets and carbon nanotubes

Present study focuses on the synthesis of flexible nanocomposite film made of poly(3,4-ethylenedioxythiophene)-poly(styrenesulfonate) (PEDOT:PSS), graphitic carbon nitride (g-C3N4) nanosheets, and carbon nanotubes (CNTs) and how the g-C3N4 nanosheets and CNTs affect the thermoelectric properties of PEDOT:PSS. Incorporating 10 wt% of g-C3N4 nanosheets to PEDOT:PSS improved the Seebeck coefficient to 74.3 μVK−1, ∼5 times higher than the PEDOT:PSS film. However, this led to a decrease in electrical conductivity, limiting the power factor to 335.4 μWm−1K−2. In order to address this, CNTs were added as conductive fillers. The resulting PEDOT:PSS composite, with 10 wt% of g-C3N4 and 10 wt% CNTs, showed a significant power factor of 589.8 μWm−1K−2, an electrical conductivity of 810.6 Scm−1, and a Seebeck coefficient of 84.5 μVK−1, indicating a substantial improvement in the thermoelectric performance of pristine PEDOT:PSS. The increased Seebeck coefficient in the PEDOT:PSS and g-C3N4 composite is due to reduced carrier concentration and energy filtering at the interfaces. The enhancement in electrical conductivity and the Seebeck coefficient after adding CNTs is attributed to the formation of conductive networks, increased mobility, and energy filtering at the interfaces between PEDOT:PSS and CNTs. The study suggests that combining g-C3N4 nanosheets and CNTs with PEDOT:PSS could enhance the thermoelectric performance of PEDOT:PSS-based materials.

Synergistic strategy via modulated energy filtering and hierarchical defects evolution for high performance GeTe thermoelectrics

GeTe thermoelectric materials are very promising for sustainable waste-heat harvesting, while optimizations have been focusing on lowering lattice thermal conductivity or decreasing carrier concentration. As a long-pursued strategy to improve electronic transport properties, the full realization of effective energy filtering has been hindered by the mismatch between the energy barriers introduced and the intrinsic Fermi level of the matrix material. In this work, a synergistic strategy combining modulated energy filtering effect and hierarchical defect evolution engineering leads to ultrahigh performance GeTe-based thermoelectric materials. Very effective energy filtering is achieved by incorporating carbon fibers, which increases the overall energy of charge carriers. This greatly enhances Seebeck coefficient to over 230 μVK-1 with minor reduction in electrical conductivity which simultaneously decreases electronic thermal conductivity. Furthermore, the inclusion of carbon fibers modulates the microstructure of GeTe and facilitates the evolution of point defects to higher dimensional defects for broadband phonon scattering, greatly suppressing the lattice thermal conductivity to 0.3 Wm-1K-1. This strategy yields a prominent thermoelectric figure of merit ZTmax ∼ 2.3 and an exceptional quality factor Bmax ∼ 2.24 for Ge0.97Bi0.07Te with 0.9 wt% carbon fibers. This study demonstrates a promising strategy to modulate the convoluted thermoelectric properties for ultrahigh performance thermoelectric materials.

Charge Transport Mechanism in Implanted p-GaSe:H+ Single Crystal

The study analysed the impact of radiation defects on p-GaSe single crystal implanted with H+ ions (70 keV) on its charge transport mechanism. The research was conducted at 100 K and 300 K in an electric field of 102-104 V/cm. The study found that the activation energy of charge carriers injected at low temperatures and electric fields E < 103 V/cm ranged from 0.23-0.39 eV. This was observed due to the trapping of charge carriers in concentration traps of approximately 9·1013 cm-3, leading to monopolar injection. In the fields, E > 103 V/cm, a sharp increase in current was observed, which was explained by the thermal ionisation of local levels following the Frenkel mechanism. The study determined that the charge transport mechanism in GaSe:H+ crystals at low temperatures has a non-activated character.

Theory of Electron Transport in Two-Barrier Five-Layer Semiconductor Structures

The dependence of the transparency coefficient of a five-layer two-barrier structure on the electron energy and the ratio of the widths of two neighboring potential barriers is calculated. It is shown that the extremum of the transparency coefficient significantly depends on the geometric dimensions of the structure layers. In a symmetric five-layer two-barrier semiconductor structure, the condition for the occurrence of "resonant" electron transitions is defined. It is demonstrated that the mechanism of such (resonant) transitions is explained by the interference of de Broglie waves of electrons in the potential well, where the phases of de Broglie waves are determined by the geometric dimensions of the structure, and their amplitudes - by the ratio of the carrier energy to the height of the potential barrier. It has been established that with an increase in the effective mass of charge carriers, the number of intersections of the quantities fR (ξ) and ((1-2ξ))/(√(ξ-ξ2) increases. These intersections determine the dimensionally-quantized levels where electrons are localized.

Investigation on the carrier dynamics and energy band of the CVD-grown large area WS2/Bi2O2Se heterostructure

Bismuth oxyselenide (Bi2O2Se) emerged as a prominent member of the quasi-2D layered material family, possesses appealing characteristics for optoelectronic applications including impressive environmental stability and high carrier mobility. Recently, although significant advancements have been made in the initial research on the optoelectronic characteristics of Bi2O2Se-based heterostructures, there remains a lack of comprehensive study on the carrier dynamics and energy band within these structures. In this work, large-area (1 cm × 1 cm) continuous Bi2O2Se and monolayer WS2 films were grown by chemical vapor deposition (CVD) method, and the related WS2/Bi2O2Se heterostructures were successfully constructed. Triple decay processes with lifetimes ofτ1 ∼ 298 ps, τ2∼37 ps andτ3 ∼ 1.58 ns are observed through time-resolved photoluminesce (TRPL), which were attributed to the recombination of neutral excitons, trions, and interlayer excitons, respectively. Then, the energy band structure was investigated through x-ray photoelectron spectroscopy, revealing a type-Ⅱ band alignment at the heterointerface. The valence band offset was 0.19 eV, while conduction band offset was approximately 1.09 eV as confirmed by ultraviolet photoelectron spectroscopy. As a result, the WS2/Bi2O2Se junction enhances charge transfer and interlayer interactions by the aid of interface build-in electric field. These results showcase the potential of integrating Bi2O2Se with other 2D semiconductors to form heterostructures possessing novel charge dynamic behaviors, and provide valuable understanding into the functionality of optoelectronic devices that rely on these 2D heterostructures.

A hot-emitter transistor based on stimulated emission of heated carriers

Hot-carrier transistors are a class of devices that leverage the excess kinetic energy of carriers. Unlike regular transistors, which rely on steady-state carrier transport, hot-carrier transistors modulate carriers to high-energy states, resulting in enhanced device speed and functionality. These characteristics are essential for applications that demand rapid switching and high-frequency operations, such as advanced telecommunications and cutting-edge computing technologies1–5. However, the traditional mechanisms of hot-carrier generation are either carrier injection6–11 or acceleration12,13, which limit device performance in terms of power consumption and negative differential resistance14–17. Mixed-dimensional devices, which combine bulk and low-dimensional materials, can offer different mechanisms for hot-carrier generation by leveraging the diverse potential barriers formed by energy-band combinations18–21. Here we report a hot-emitter transistor based on double mixed-dimensional graphene/germanium Schottky junctions that uses stimulated emission of heated carriers to achieve a subthreshold swing lower than 1 millivolt per decade beyond the Boltzmann limit and a negative differential resistance with a peak-to-valley current ratio greater than 100 at room temperature. Multi-valued logic with a high inverter gain and reconfigurable logic states are further demonstrated. This work reports a multifunctional hot-emitter transistor with significant potential for low-power and negative-differential-resistance applications, marking a promising advancement for the post-Moore era.

Research on calibration method for measurement error of multiple rate carrier energy meter

Abstract With the rapid development of smart grid technology, the multi-rate carrier watt-hour meter is an important measurement tool in power systems; its accuracy directly affects economic benefits and energy management efficiency. This paper proposes a calibration method of measurement error for a multi-rate carrier watt-hour meter to improve the measurement accuracy and reliability of the watt-hour meter under changing load conditions. The multi-rate carrier energy data is collected in real-time by high-precision data acquisition equipment to ensure the comprehensiveness and accuracy of the data. Using advanced data analysis technology to extract the amplitude characteristics of abnormal metering data, on this basis, the output deviation of equipment without input signal is eliminated, and the metering error calibration of the electric energy meter is completed. The experimental results show that this method can significantly improve the metering accuracy of multi-rate carrier watt-hour meters under different power consumption conditions and has good adaptability and practical value.

Double barrier structure of Mo/AlN/Mo/AlN/Mo multilayer and its resonant tunneling effect

We prepare a symmetrical double barrier structure of Mo/AlN/Mo/AlN/Mo by using the reactive magnetron sputtering on a sapphire substrate and examine its resonant tunneling effect. Characterizations of multilayers demonstrate that the AlN (0002) aligns well along the Mo (110). Direct current-voltage (DC I–V) test finds significant negative differential resistance at room temperature around 0.7 and 0.9 V carrier energy and with peak-to-valley current ratios of about 1.1 and 1.2. The simulation using conventional transfer matrix method suggests good consistence between the designed structure, the quantized energy level and the switching voltage. The large signal DC model also fits the experimental I–V properties. Our work provides a new type of resonant tunneling device in room temperature.

Energy Filtering in Doping Modulated Nanoengineered Thermoelectric Materials: A Monte Carlo Simulation Approach.

Using Monte Carlo electronic transport simulations, coupled self-consistently with the Poisson equation for electrostatics, we explore the thermoelectric power factor of nanoengineered materials. These materials consist of alternating highly doped and intrinsic regions on the scale of several nanometers. This structure enables the creation of potential wells and barriers, implementing a mechanism for filtering carrier energy. Our study demonstrates that by carefully designing the nanostructure, we can significantly enhance its thermoelectric power factor compared to the original pristine material. Importantly, these enhancements stem not only from the energy filtering effect that boosts the Seebeck coefficient but also from the utilization of high-energy carriers within the wells and intrinsic barrier regions to maintain relatively high electronic conductivity. These findings can offer guidance for the design and optimization of new-generation thermoelectric materials through improvements in the power factor.

Quantum confinement of carriers in the type-I quantum wells structure

Abstract Quantum confinement is recognized to be an inherent property in low-dimensional structures. Traditionally, it is believed that the carriers trapped within the well cannot escape due to the discrete energy levels. However, our previous research has revealed efficient carrier escape in low-dimensional structures, contradicting this conventional understanding. In this study, we review the energy band structure of quantum wells along the growth direction considering it as a superposition of the bulk material dispersion and quantization energy dispersion resulting from the quantum confinement across the whole Brillouin zone. By accounting for all wave vectors, we obtain a certain distribution of carrier energy at each quantized energy level, giving rise to the energy subbands. These results enable carriers to escape from the well under the influence of an electric field. Additionally, we have compiled a comprehensive summary of various energy band scenarios in quantum well structures relevant to carrier transport. Such a new interpretation holds significant value in deepening our comprehension of low-dimensional energy bands, discovering new physical phenomena, and designing novel devices with superior performance.

High thermoelectric power factor of SbPbTe thin alloy film grown by thermal evaporation and post-annealing treatment

Simple chemical compositions are frequently preferred in practical thermoelectric material applications due to their high growth success rates and increased stability. In this study, an n-type SbPbTe thin alloys film with equal amounts of all elements was grown, and the effect of equal contributions on thermoelectric properties and post-annealing treatment for 1–4 h was investigated. The as-grown SbPbTe thin alloys film and post annealed sample exhibited uniform composition distributions, single-phase microstructures, and non-uniform grain sizes at both micro- and nanoscales. The 4-h post annealed SbPbTe thin alloys film demonstrated maximum thermoelectric power factor of 21.2 μWcm−1K−2 at 500 K. This improvement was attributed to a decrease in electrical conductivity and the maintenance of a relatively maximum Seebeck coefficient achieved through the adjustment of carrier concentrations. The small grain size distribution over the surface contributed to strengthened grain boundary scattering, enhanced the charge carrier density and energy filtering effect. The thermoelectric power factor for the 4-h annealed sample peaks at 500 K, indicating optimal thermoelectric performance, as calculated from the Seebeck coefficient and electrical conductivity values. These findings provide insights into the structural and thermoelectric properties of SbPbTe thin alloy films, pointing to potential ways to improve their thermoelectric efficiency.

Improved Thermoelectric Properties of Selenium Functionalized Pedot

AbstractPolymer‐based chalcogenide composites are gaining attention for thermal energy storage thermoelectric (TE) applications due to their high Seebeck coefficient (S) and electrical conductivity (σ), compared to low thermal conductivity of polymers without electrical optimization. This combination can enhance power factor and ZT while suppressing drawbacks. The energy‐filtering effect of polymer/chalcogenide interfaces may also improve TE performance, further enhancing the potential for improved TE applications. In this work, Poly(3,4‐ethylenedioxythiophene) (PEDOT) was functionalized with selenium (Se), and its structural and thermoelectric (TE) properties were studied. The variations of σ and S, with higher percent of Se content, displays a simultaneous rise in both σ and S values, which is noteworthy. The probable reason behind this increment of both σ and S values is due to the improvement in charge transport in the composites due to a percolating network formed between the Se nanoparticles and PEDOT along with the carrier energy filtering interaction between PEDOT and Se. The highest room temperature ZT value obtained is 0.027 for 82 % of Se content in PEDOT, which is comparable with bulk nanostructured organic‐inorganic hybrid composite materials. This work presents an efficient technique for enhancing the TE properties of polymers through inorganic functionalization.

Transient behaviour analysis in silicon carbide alpha particle detector using TCAD and SRIM simulation

Time response characteristics of α particle detector are crucial for monitoring radiation fields varied with time and its characterization of pulse radiation field. Here, SRIM-informed TCAD simulation is utilized to visually investigate the transient behaviors of carriers and alpha particles in 4H-SiC Schottky barrier detectors for the time response characteristics. We identified external bias voltage and incident particle energy as key factors to influence transient current pulse broadening. Low-energy alpha particles result in low initial kinetic energy of the ionization-generated carriers, leading to transient current broadening and reduced time resolution characteristics. Conversely, high-energy alpha particles ionize carrier with high drift velocity, preventing the broadening effect. Our simulation provides a planform and valuable guidance for optimizing alpha particle detector, selecting appropriate bias voltages, and enhancing time resolution capabilities.

Controlling Thermoelectric Properties of Laser-Induced Graphene on Polyimide

In the field of wearable thermoelectric generators, graphene-based materials have attracted attention as suitable candidates due to their low material costs and tunable electronic properties. However, their high thermal conductivity poses significant challenges. Low thermal conductivity due to porous structure of the laser-induced graphene, combined with its affordability and scalability, positions it as a promising candidate for thermoelectric applications. In this study, thermoelectric properties of the laser-induced graphene (LIG) on polyimide and their dependence on structural modifications of LIG were investigated. Furthermore, it was shown that increasing the laser scribing power on polyimide results in larger graphene flakes and a higher degree of graphitization. Electrical conductivity measurements indicated an increase with increasing laser power, due to a higher degree of graphitization, which enhances charge carrier mobility. Our findings reveal that LIG exhibits p-type semiconducting behavior, characterized by a positive Seebeck coefficient. It was shown that increasing laser power increased the Seebeck coefficient and electrical conductivity simultaneously, which is attributed to a charge carrier energy filtering effect arising from structures occurred on the graphene flakes. Moreover, the porous structure of LIG contributes to its relatively low thermal conductivity, ranging between 0.6 W/m·K and 0.85 W/m·K, which enhances the thermoelectric performance of LIG. It has been observed that with increasing laser power, the figure of merit for laser-induced graphene can be enhanced by nearly 10 times, which holds promising applications for laser-induced graphene due to the tunability of its thermoelectric performance by changing laser parameters.

Photoluminescence Emission Efficiency Analysis Methodology by Integrating Raman Spectroscopy of the A1(LO) and E2(high) Phonons in a GaInN/GaN Heterostructure

Microscopic lattice vibration images of the E2(high) mode (E2H) and another mode of A1(LO) (A1L) or the higher energy branch of LO‐phonon−plasmon coupling mode (LOPC+) in a Ga0.95In0.05N film on a GaN template are obtained by Raman scattering spectroscopy using a 325 nm laser. The increase in temperature by increasing the laser power is obtained from the decrease in the energy of E2H and the theoretical formula comprising two terms based on the mode energy variation of the bulk material and the thermal strain effect. Using the obtained temperature and the energy shift of the LOPC+, the mapping images of the temperature and electron density in the x–y plane are simultaneously obtained. This image provides the spatial variation of photoluminescence (PL) emission efficiency, given as PL intensity per electron. This method enables the quantitative discussion on photo‐emission efficiency even in the regions of low or high carrier density affected by carrier transport. In the investigated area, a region with a lower PL efficiency is found despite a higher electron density and lower temperature increase than the surrounding region. This imaging analysis is feasible in integrating the carrier and thermal energy transports and recombination processes in carrier dynamics study.

Noticeable influence of V-dopant on optoelectronic properties of ZnO films prepared by SILAR technique

Wide bandgap semiconductors such as Zinc Oxide (ZnO) have earned much attention on account of its interesting optical and electrical properties. Also, doping ZnO with suitable transition elements enables to tune its properties, making it suitable for applications like transparent conducting oxides and LEDs. To this aim, Vanadium-doped ZnO (V:ZnO) thin films are fabricated using the SILAR method and studied the structural, optical, vibrational, photophysical and electrical properties. Introducing vanadium creates lattice relaxation in the ZnO wurtzite structure, influencing its electronic band structure. The X-ray diffraction (XRD) analyses have verified the structural integrity of the vanadium-doped zinc oxide (V:ZnO) films, revealing their polycrystalline composition. The Raman spectroscopy shows the reduced phonon line widths due to the improved crystallite quality with the presence of vanadium. Furthermore, it has been noted that optical characteristics such as the bandgap and refractive index are sensitive to vanadium doping as a consequence of modified electronic structures. Hall-effect experiments have shown that undoped ZnO films possess a mobility of 1.31 cm2/Vs and a charge carrier density of 5.58 × 1013 cm−3. It has been observed that doping with V markedly influences these parameters of ZnO films. Then, the time-resolved photoluminescence measurements reveal the increased carrier lifetimes, suggesting the introduction of dopants mitigates carrier-phonon interactions. Such interactions need to be minimized to prevent the dissipation of carrier energy. In essence, the reported work demonstrates the potential of V:ZnO for optoelectronic applications.

Reaction amplification with a gain: Triplet exciton–mediated quantum chain using mixed crystals with a tailor-made triplet sensitizer

Photochemical valence bond isomerization of a crystalline Dewar benzene (DB) diacid monoanion salt with an acetophenone-linked piperazinium cation that serves as an intramolecular triplet energy sensitizer (DB-AcPh-Pz) exhibits a quantum chain reaction with as many as 450 product molecules per photon absorbed (Φ ≈ 450). By contrast, isomorphous crystals of the DB diacid monosalt of an ethylbenzene-linked piperazinium (DB-EtPh-Pz) lacking a triplet sensitizer showed a less impressive quantum yield of ca. Φ ≈ 22. To establish the critical importance of a triplet excited state carrier in the adiabatic photochemical reaction we prepared mixed crystals with DB-AcPh-Pz as a dilute triplet sensitizer guest in crystals of DB-EtPh-Pz. As expected from their high structural similarities, solid solutions were easily formed with the triplet sensitizer salt in the range of 0.1 to 10%. Experiments carried out under conditions where light is absorbed by the triplet sensitizer-linked DB-AcPh-Pz can be used to initiate a triplet state adiabatic reaction from 3DB-AcPh-Pz to 3HB*-AcPh-Pz, which can serve as a chain carrier and transfer energy to an unreacted DB-EtPh-Pz where exciton delocalization in the crystalline solid solution can help carry out an efficient energy transfer and enable a quantum chain employing the photoproduct as a triplet chain carrier. Excitation of mixed crystals with as little as 0.1% triplet sensitizer resulted in an extraordinarily high quantum yield Φ ≈ 517.

Tunable High-Frequency Acoustoelectric Current Oscillations in Fluorine-Doped Single-Walled Carbon Nanotubes

Herein, we report on a fluorine-doped single-walled carbon nanotube (FSWCNT) phenomenon, that yields tunable high-frequency self-sustained acoustoelectric direct current (ADC) oscillations. A tractable analytical method was used in the hypersound domain, to base the calculations on carriers in the lowest miniband. Hypothetically, the energy of interaction between the carriers and the acoustic phonons is less than the energy of the typical carriers. High-order harmonics of the acoustic phonons’ effective field could be disregarded under this supposition. The ADC was observed to exhibit a nonlinearity, that resulted from the carrier distribution function’s distortion as a result of interaction with the acoustic phonons, which had strong nonlinear effects. Theoretically, we demonstrated that the dynamics of space charge instabilities, due to Bragg reflection of Bloch oscillating carriers in the FSWCNT’s miniband, were the only factors which contributed to the creation of radiation in the terahertz (THz) frequency range. The study also investigated the influence of various FSWCNT parameters such as the overlapping integrals (Δs and Δz), ac-field E1, and carrier concentration noon the behaviour of the ADC. The results showed that the intensity of the ADC oscillation Jzzae/Joae could be tuned by adjusting Δs, Δz, E1, and no.This tunability suggests that FSWCNTs could be used as an active device operating at very high frequencies, potentially reaching the submillimeter wavelength range. The study also suggests the possibility of domain suppression and acoustic Bloch gain through dynamic ADC stabilisation.

Reanalysis of energy band structure in the type-II quantum wells

Band structure analysis holds significant importance for understanding the optoelectronic characteristics of semiconductor structures and exploring their potential applications in practice. For quantum well structures, the energy of carriers in the well splits into discrete energy levels due to the confinement of barriers in the growth direction. However, the discrete energy levels obtained at a fixed wave vector cannot accurately reflect the actual energy band structure. In this work, the band structure of the type-II quantum wells is reanalyzed. When the wave vectors of the entire Brillouin region (corresponding to the growth direction) are taken into account, the quantized energy levels of the carriers in the well are replaced by subbands with certain energy distributions. This new understanding of the energy bands of low-dimensional structures not only helps us to have a deeper cognition of the structure, but also may overturn many viewpoints in traditional band theories and serve as supplementary to the band theory of low-dimensional systems.

Smart sensors/actuators based in amorphous nanostructures, according to enhance robotic arms energy transmission

This article mainly analyzes the correlation between the carrier energy in robotic arms, according to enhance its performance. This task is achieved because of the sensors/actuators based on nanostructures properties: short response time and high robustness, which proportionated the possibility to execute intricate instructions by the control subsystem of the robotic arm. Therefore, the instructions executed by the controller are supported by a polynomial design, this algorithm helped to evaluate every response signal as a consequence of the main control system, which was consequently by the short response time from the main sensors “flow (carrier energy) and speed of the robotic arm”, moreover, the advantage of the proposed system is given by the extra time obtained also to verify the stability of the robotic arm based in Lyapunov models correlated with Lagrange, as well as every equations were solved and organized by neural network.