The microstructural evolution, as revealed by plan-view and cross-sectional transmission electron microscopy of polycrystalline NaCl-structure Ti 1− x Al x N ( x≤0.5) and TiN films deposited by reactive magnetron sputter deposition is similar. At low temperatures ( T s ≤500° C) and in the absence of ion bombardment, the film are underdense and exhibit a pronounced columnar morphology. The addition of low energy ( E i ⪅200 eV)ion irradiation during deposition using incident ion-to-neutral ratios J i J n≤1 in mixed Ar N 2 plasmas results in film densification, defect incorporation and a more equiaxed grain structure. At higher incident flux ratios ( J i J n⩾4 ) , low-energy ion irradiation provides increased apparent adatom mobility and, hence, larger grain size. The epitaxial temperature for μm-thick films of both Ti 1− x Al x N( x≤0.5) and TiN, deposited in pure N 2 discharges, on Mg(100) substrates, is ≈ 500°C. The density of {111} dislocation loops n d, the primary defects, was found to depend both on T s and E i. For example n d was decreased by several orders of magnitude using low-energy ion irradiation. However, the use of higher-energy (≥ 300 eV) ion irradiation gave rise to the formation of Ar and/or N 2 gas bubbles due to precipitation of trapped ions. Plastic deformation in the films took place through glide of edge dislocations. Phase transition reaction paths were determined for Ti 1− x Al x N as a function of x and T s. In the case of epitaxial Ti 0.5Al 0.5N, increasing T s resulted in surface-initiated spinodal decomposition during growth in the range T s = 540−560 °C with the formation of compositionally modulated NaCl-structure plateles along [100] as a precursor to bulk phase separation of wurtzite-structure AlN and NaCl-structure TiN at higher T s. In the case of Ti 1− x Al x N grown on oxidized silicon at T s =500 ° C, increasing x resulted in single-phase NaCl-structure alloys for 0⩽ x⪅0.4, two-phase TiN and AlN-structure for 0.4 < x⪅0.9, and single-phase AlN for x>0.9. Pseudomorphic forces associated with growth on MgO(001) substrates extended the stability range for the NaCl-structure phase to x⩾0.5 at T s °C.
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