Flexible pressure sensors, as a key branch of flexible electronics, have garnered widespread attention in various fields due to their exceptional compatibility and flexibility. A large number of studies have been conducted to design flexible pressure sensors with excellent performance by utilizing different materials, structures, and emerging manufacturing processes. This paper outlines the performance metrics used to evaluate flexible pressure sensors, as well as various sensing mechanisms, and provides a detailed introduction to emerging materials and technologies for manufacturing. It also focuses on the latest research on the production of flexible pressure sensors using microelectronic printing techniques, including screen printing, inkjet printing, and dispensing printing. In addition, this work provides a comprehensive overview of recent advances in the applications of flexible pressure sensors across various fields, including healthcare, sports, e-skin, human–machine interaction, underwater environments, and intelligent sensing algorithm–based systems. Finally, the paper discusses the challenges and future development prospects, aiming to provide comprehensive, timely, and scientific references for the field of flexible pressure sensors.

Abstract The rise of the electronic age sparked a quest for increasingly faster and smaller switches, since this element is ubiquitous and foundational in any electronic circuit to regulate the flow of current. Mott insulators are promising candidates to meet this need as they undergo extremely fast resistive switching under electric field initiated by an avalanche phenomena. However, the nature of the final switched state is still under debate. The spatially resolved micro‐X‐ray Diffraction imaging and micro‐Raman experiments carried out on the prototypal Mott insulator (V0.95Cr0.05)2O3 show that the resistive switching is associated with the creation of a conducting filamentary path consisting in an isosymmetric compressed phase without any chemical or symmetry change. This strongly suggests that the avalanche initiated resistive switching mechanism is inherited from the bandwidth‐controlled Mott‐Hubbard transition just like the laser induced insulator to metal transition recently studied in the same system. This discovery may hence ease the development of a new branch of electronics called Mottronics.

ABSTRACT Web evaluation protocols often emphasize the inclusion of specific criteria, but frequently overlook accessibility, a critical component of inclusive digital services. As signatories to the Marrakesh Treaty, library associations have committed to providing accessible information, yet many public library websites fall short of this goal. With the reliance of libraries on electronic information, and the function of library websites as an electronic branch, web pages need to have accessible information for users. This study expands a standard web evaluation protocol by integrating data from the WAVE Web Accessibility Evaluation Tool, which identifies issues based on Web Content Accessibility Guidelines (WCAG). Sixty-six New Zealand public library websites were assessed using this enhanced protocol. While libraries generally meet basic information delivery standards, accessibility issues – particularly related to HTML structure and ARIA (Accessible Rich Internet Applications) attributes – were common. The study found that summary categories in WAVE were insufficient for diagnosing specific problems, necessitating deeper analysis of raw data. Findings highlight opportunities for libraries to improve web accessibility, aligning digital practices with their commitment to equitable access. This research underscores the importance of embedding accessibility into web evaluation frameworks to support inclusive information environments.

Introduction: Our study will helps to identify blood donor characteristics. The study aims to investigate the extent of awareness and knowledge regarding blood donation among students and to explore their attitudes towards blood donation in general. It also highlights various motivational factors and obstacles which impact the decision to donate blood among students. Efforts should be made to increase the level of awareness and positive attitude toward blood donation. An essential step to achieve this is obtaining comprehensive data about the current situation of awareness, knowledge, and attitudes of the population towards blood donation. The Aims of Study are as Follows: (1) To assess the knowledge regarding blood donation among students of bvvs polytechnic college, bagalkot (2) To assess the attitude regarding blood donation among students of bvvs polytechnic college, Bagalkot. (3) To find out the correlation between knowledge and attitude regarding blood donation among students of bvvs polytechnic college, Bagalkot. (4) To find out the association between knowledge and attitude regarding blood donation among students of bvvs polytechnic college, Bagalkot. Materials and Methods: The Study approach was a quantitative research approach. Non- experimental descriptive research design was used. The study was conducted at bvvs polytechnic college, Bagalkot among 120 students studying in first year diploma electronic branch using stratified random sampling technique. The data were collected using structured self adminstred questionnaires. Results: Blood donation showed that in frequencies of students in knowledge good 33(27.6 %), average 76(63.3%), poor11 (9.1%), in attitude level of students with positive attitude 112(93.3%), negative attitude8 (6.66%).

Introduction. The current trends in the development of electronics require miniaturized devices with increased performance at affordable costs. The introduction of nanoscale structures and layers based thereon, including island structures, offers great opportunities for the development of various branches of electronics. Island thin films and nanostructures (INS) are thin-film structures whose formation has been completed at the initial stages. The size of the islands does not exceed 100 nm in the lateral and vertical directions, which makes the INS arrays to exhibit dimensional effects (electrical, magnetic, optical, mechanical, etc.). The formation of a composite dielectric layer with embedded conductive INS presents particular interest.Aim. Development of a technique and testing of formation modes of a composite coating with INS.Materials and methods. The research was carried out at the Department of Electronic Technologies in Mechanical Engineering of Bauman Moscow State Technical University. The research materials alumina and copper. A MVTU-11-1MC vacuum unit, equipped with magnetron and ion sources, was used as technological equipment. The roughness of the substrate and coating surfaces was studied using a Solver NEXT atomic force microscope; the geometric parameters of the composite layer were studied using a CROSSBEAM 550 scanning electron microscope.Results. The average absolute deposition rates for copper and alumina were 25.9 and 0.3 nm/min, respectively. A conductive insert with a diameter of 25 mm and a width of 0.46 mm was used to form a composite structure with a diameter of 100 nm and a distance between the islands of 3…5 nm. To obtain a homogeneous structure and a high-quality adhesion of the composite layer to the substrate, preliminary ion treatment of the substrate for 120 s was required.Conclusion. The developed method for forming a composite coating with INS involves the use of a combined target. The results obtained can be used when creating composite thin-film coatings from dielectric and conductive nanoscale structures by magnetron sputtering in vacuum.

The work is devoted to the development and research of a three-channel decimeter range power divider. Power dividers are widely used in all branches of radio electronics and wireless communication systems, in particular in radio communication systems, radio monitoring systems and others. At the first stage of research, a three-channel divider was calculated based on the Wilkinson scheme, implemented on quarter-wave line sections. To minimize losses in the divider, air-filled coaxial line sections were used for its implementation. The ballast resistance system is implemented according to the triangle scheme, which made it possible to minimize its parasitic inductance. The expansion of the operating frequency band is achieved by using a two-stage scheme with an additional quarter-wave line section. At the second stage of the research, the parameters of the developed divider were simulated in the Micro-Cap 12 program, which is currently freely available. For this purpose, the serial parameters of all line sections of the divider were calculated. The simulation showed that in the range from 350 MHz to 550 MHz, the isolation between the channels is no worse than -23.2 dB, and at the central frequency – no worse than -40 dB. At the third stage, a research of the implemented experimental prototype of the three-channel divider was carried out. As the research showed, the transmission coefficient from the input to any of the output channels of the divider in the entire operating frequency band is no worse than -4.8 dB, and the reflection coefficient from the input is no worse than -20 dB, which indicates its high efficiency. The isolation between the channels at the boundary of the operating range is no worse than -22 dB and is heading to -40 dB in its central part. The results of the experimental research coincide well with the modeling results in the Micro-Cap 12 program, which confirms the reliability of the numerical calculation and the correct choice of the divider model.

Tungsten diselenide, WSe2, is attractive as a channel material for p-channel metal–oxide–semiconductor field effect transistors (PMOSFETs) using transition metal dichalcogenide (TMD) nanosheets for ultimate CMOS scaling. For practical applications, it is necessary to demonstrate good quality devices on as-grown, large-area chemical vapor deposition (CVD) grown TMD films, rather than on small, exfoliated flakes from bulk crystals, and without requiring transfers to secondary substrates. This article reports on the growth optimization of large-area WSe2 and efforts to achieve higher hole conduction, which is more challenging than electron conduction since most TMDs tend to be n-type due to defects. Achieving low contact resistance and high drive currents is vital, but the intrinsic defects within the grown material dominate the carrier mobilities and effectively make TMDs more n-type due to chalcogen vacancies in devices fabricated at high temperatures. We have, therefore, developed salt-assisted growth strategies at different growth temperatures using atmospheric pressure CVD (APCVD). Furthermore, we identified optimal APCVD growth and PMOSFET fabrication recipes to achieve high hole conduction. With growth and fabrication optimization, we can achieve drive currents of 10 μA/μm in back-gated PMOSFETs at Vd = −2 V in as-grown WSe2, akin to their exfoliation-based counterparts. We also have seen evidence of both hole and electron ambipolar conduction even with high work function source/drain contact metals, signifying that contact engineering will be vital to suppress the electron branch and improve hole conduction.

Flexible magnetic sensors, which have advantages such as deformability, vector field sensing, and noncontact detection, are an important branch of flexible electronics and have significant applications in fields such as magnetosensitive electronic skin. Human skin surfaces have complicated deformations, which pose a demand for magnetic sensors that can withstand omnidirectional strain while maintaining stable performance. However, existing flexible magnetic sensor arrays can only withstand stretching along specific directions and are prone to failure under complicated deformations. Here, we demonstrate an omnidirectionally stretchable spin-valve sensor array with high stretchability and excellent performance. By integrating the modulus-distributed structure with liquid metal, the sensor can maintain its performance under complex deformations, enabling the overall system with omnidirectional stretchability. The fabricated spin-valve sensor exhibits a nearly unchanged giant magnetoresistance ratio of 8% and a maximum sensitivity of 0.93%/Oe upon omnidirectional strain up to 86% and can maintain stable performance without fatigue for over 1000 stretching cycles. Furthermore, this spin-valve sensor array is characterized by stable sensing performance for magnetic fields under complicated deformations and can be applied as a magnetosensitive electronic skin. Our results provide insights into the development of next-generation stretchable and wearable magnetoelectronics.

As an innovative branch of electronics, intelligent electronic textiles (e-textiles) have broad prospects in applications such as e-skin, human-computer interaction, and smart homes. However, it is still a challenge to distinguish multiple stimuli in the same e-textile. Herein, we propose a dual-parameter smart e-textile that can detect human pulse and body temperature in real time, with high performance and no signal interference. The doping of SWCNTs in PEDOT:PSS improves the electrical conductivity and Seebeck coefficient of the prepared composites, which results in excellent pressure and temperature-sensing properties of the PEDOT:PSS/SWCNTs/CS@PET-textile (PSCP) sensor. The dual-mode sensor has high sensitivity (32.4 kPa-1), fast response time (~21 ms), and excellent durability (>2000 times) in pressure detection. Concurrently, this sensor maintains a high Seebeck coefficient of 25 μV/K in the 0-120 K temperature range with a tremendous linear relationship. Based on impressive dual-mode sensing characteristics and independent temperature-difference- and pressure-sensing mechanisms, smart e-textile sensors realize the real-time simultaneous monitoring of weak pulse signals and human body temperature, showing great potential in medical healthcare. In addition, the potential energy is excited by the temperature gradient between the human skin and the environment, which provides a novel idea for wearable self-powered devices.

Objective: The present study aims to rank the indicators of a model for enhancing the quality of virtual university education with a knowledge management approach, conducted at the Electronic Branch of the Islamic Azad University. Methodology: This study employs a mixed-methods approach with an exploratory objective. The statistical population comprises professors and faculty members of the Electronic Branch of the Islamic Azad University, with 20 individuals purposefully selected for interviews. Data collection tools include semi-structured interviews for qualitative data and a researcher-made questionnaire for quantitative data. Qualitative data were analyzed using Glaser's (1992) coding method, while the Importance-Performance Analysis (IPA) method was applied in the quantitative phase to assess the significance and performance of the indicators. Additionally, Interpretive Structural Modeling (ISM) was utilized to stratify the dimensions of the model. Findings: The study identified 68 quality enhancement components for virtual university education. The indicator "educational system capabilities" (code 4) ranked first with a weight of 0.0294, positioned in the first quadrant of the Importance-Performance Matrix, where importance is high, but performance is low. For knowledge management indicators, "knowledge retention and prevention of misuse" (code 17) ranked first with a weight of 0.0545. Using ISM, dimensions were stratified, with "university management and leadership" placed at the highest level (Level 10) and "services and responsiveness" at the lowest level (Level 1). Conclusion: The findings highlight that knowledge management dimensions significantly impact the quality enhancement of virtual university education. The hierarchical structure underscores the importance of "university management and leadership" as a foundational element, cascading down to "services and responsiveness" as an outcome influenced by other dimensions.

We report a velocity-mapped ion imaging study of the photodissociation of O3 in the Huggins band. The O(3PJ) images show evidence for three electronic channels producing O2(X3Σg-), O2(a1∆g), and O2(b1Σg+) state fragments, with the latter two arising from the spin-forbidden photodissociation of O3. Forward convolution simulations of the derived total translational energy distributions permit extraction of the vibrational state distribution for each O2 electronic state. All these distributions peak near v = 0 and decrease monotonically with the vibrational state. The wavelength-dependent branching of the three electronic channels has been determined and is approximately constant over the wavelength region studied (322-328nm). We have observed that the O2 electronic state branching ratios depend on the coincident O(3PJ) spin-orbit state, and the O2(b1Σg+) state is particularly sensitive. These results are qualitatively consistent with previous calculations on the coupling of the initially excited state to dissociative states by Rosenwaks and Grebenshchikov [J. Phys. Chem. A. 114, 9809-9819 (2010)]. The spatial anisotropy of the three dissociation channels has been determined through analysis of the O(3P0) angular distributions. The results are consistent with recent calculations but differ from previous experimental reports. The experimental results provide detailed information on the dissociation dynamics and should motivate new calculations.

The primary objective of the study is to find or study the impact of digital finance, represented by the following dimensions (electronic bank branches, automated teller machines, electronic payment cards, and open banking services), on achieving efficient financial performance (capital adequacy, profitability, credit risk, liquidity) in commercial banks listed on the Iraqi Stock Exchange for the period (2015-2021). In order to achieve the goal of this study, statistical methods models were relied upon, using the least squares method, as the results of the study concluded that the relationship between financial digitalization and the efficiency of financial performance constitutes A positive linear relationship, meaning that the greater the financial digitization, the more efficient the financial performance. The research also presented a set of recommendations that relevant authorities can use.

In this work, the Landauer approach-based short channel model of a graphene field effect transistor has been presented. The quasi-ballistic and ballistic transport mechanism is explained by this approach for nanoscale transistors. The concept of the virtual source is considered to obtain the carrier density in active regions. Here, we apply the Landauer approach for short-channel graphene field effect transistors relating to the parameter in the virtual source model. The mobility of the model has been improved including various scattering effects like impurity scattering, acoustic phonon scattering, and optical phonon scattering. The dynamic resistance model is considered due to asymmetry transport in the electron branch and hole branch. The proposed model has been verified with several experimental works for model validation. The comparisons of the model simulation with several experimental results that have been reported in the literature match well for different short channel lengths of graphene.

The resistivity of two-dimensional (2D) metals generally exhibits insensitivity to electron-electron scattering. However, it is worth noting that Galilean invariance may not hold true in systems characterized by a spectrum containing multiple electronic branches or in scenarios involving electron-hole plasma. In the context of this paper, we focus on 2D electrons confined within a triple quantum well (TQW) based on HgTe. This system displays a coexistence of energy bands featuring both linear and paraboliclike spectra at low energy and, therefore, lacks the Galilean invariance. This paper employs a combined theoretical and experimental approach to investigate the transport properties of this two-component system across various regimes. By manipulating carrier density and temperature, we tune our system from a fully degenerate regime, where resistance follows a temperature-dependent behavior proportional to T2 to a regime where both types of electrons adhere to Boltzmann statistics. In the nondegenerate regime, electron interactions lead to resistance that is weakly dependent on temperature. Notably, our experimental observations closely align with the theoretical predictions derived in this paper. In this paper, we establish the HgTe-based TQW as a promising platform for exploring different interaction-dominant scenarios for the massless-massive Dirac system. Published by the American Physical Society 2024

The International Conference on Power Electronics and Electrical Technology (ICPEET) has confirmed once again this year the enthusiasm and determination of students and young researchers to play a major role in the scientific progress. Since 2022, we have regularly gathered to discuss the most recent developments and achievement on power electronics and electrical technology, and we firmly convince that sharing our expertise and experience is the foundation of research activity.The 2023 2nd International Conference on Power Electronics and Electrical Technology (ICPEET 2023) took place on July 7th to 9th, 2023 in Chongqing, China (virtual event), attracting about 80 leading delegates around the world. The format we chose is a formal meeting primarily aimed at graduate students and leading researchers, who were encouraged to present their work through oral or poster presentations that provide genuine engagement of the audience and cross-pollination of ideas. One of the main purposes of the Conference was to create an international network of researchers, both experimentalists and theorists, and fruitful collaborations across different branches of power electronics and electrical technology.After previous meeting that strengthened it, the International Conference on Power Electronics and Electrical Technology was held for the second time. It was a three-day Conference, where there was an extremely rich and interactive keynote speech, oral and poster session that covered several areas of power electronics and electrical technology.With the intent of broadening the contents and stimuli adopting academic communication, the keynote speech part was held. This choice reflected the growing importance of the activity performed by scientists and researchers, especially at the earliest stages of their career, as a way of increasing their expertise and developing soft skills. Prof. Jiashen Teh (Universiti Sains Malaysia, Malaysia) addressed a speech on Flexible Thermal Line Rating for Reliable Power Systems, Prof. Zhenbin Zhang (Shandong University, China) on Bias-Free Fast Start-Up Strategy and High-Performance Predictive Control Method for DC Energy, and Prof. Ali Arefi (Murdoch University, Australia) on Reliability of Renewable-Rich Microgrids: Evaluation and Planning.In this volume, we collected part of the contributions that have been presented at the Conference. They cover topics on Cogeneration and Distributed Generation, High Voltage Technology, Wireless Power Transmission, Electromagnetic Compatibility, Advanced and Sensorless Machine Control, etc. Given the recent experimental achievements in power electronics and electrical technology, several contributions were focused on the latest results obtained in these fields, presenting the impact of experiments to the community of young researchers and forecasting the future goals in these areas of research.The organizers of ICPEET 2023 would like to thank all the keynote speakers, authors, peer reviewers, and everyone who contributed to the Conference. We owe gratitude to all the Committee members for providing necessary help and support throughout the meeting. The publication of the Proceedings of this Conference is supported by Journal of Physics: Conference Series.The Committee of ICPEET 2023List of Committee Member is available in this Pdf

Spintronics is a new branch of electronics in which the spin of the electrons as well as their charge is manipulated to produce a desired outcome. Spintronic devices are particularly attractive for memory storage and magnetic sensor applications, and potentially for quantum computing where the electron spin would represent a bit of information. Nowadays many efforts are made to increase the efficiency and lower the production costs of these materials, among others the use of molecular inorganic compounds and cheap preparation techniques [1].Most of these layers are synthesized with physical and/or vapor phase techniques [2] which allow to obtain materials with a very few defects, but which are complex to manage and typically very expensive. For this reason, in this study we have searched for a way to electrochemically deposit a compound with interesting spintronic properties in the aqueous medium. In fact, electrodeposition is notoriously a very cheap, versatile and easily scalable technique.With this purpose Mn-As system was selected thanks to its good magnetic and transport properties to be used as building blocks for spin valve [3]. MnAs has potential applications in spintronics, for electrical spin injection into GaAs and Si based devices [4] and DFT simulations predict that Mn2As and Mn3As have a low magnetization saturation and a high spin polarization at the Fermi-level [5]. Starting from MnSO4 and NaAsO2 precursors solutions with various concentrations, supporting electrolytes and pH were tested.The electrochemical behaviour of the precursors was investigated with cyclic voltammetries and both potentiostatic as well as galvanostatic deposition were carried out. The deposits obtained were morphologically and compositional characterised with scanning electron microscopy coupled with energy dispersive X-ray spectroscopy (SEM-EDS) and X-ray fluorescence spectroscopy (XRF), the chemical states were analysed with X-ray photoelectron spectroscopy (XPS), the crystalline structure was investigated with X-ray diffraction measurements (XRD). The preliminary magnetic and transport measurements evidence the promising properties of this deposition process to provide spinfiltering materials.The authors acknowledge Regione Toscana POR CreO FESR 2014-2020 – azione 1.1.5 sub-azione A1 – Bando 1 “Progetti Strategici di ricerca e sviluppo” which made possible the project “RAM-PVD” (CUP 3647.04032020.157000057_1225).

Single-crystal indium antimonide InSb is an indispensable material in such branches of solid-state electronics as opto- and nanoelectronics. In turn, the dislocation density and the character of their distribution, which directly depend on the technological parameters of the growth process, considerably determine the physical and mechanical properties of the material. We present the results of studying InSb single crystals obtained by the modernized Czochralski method in the crystallographic directions [100], [111], and [112]. The effect of growth conditions (axial and radial temperature gradients at the crystallization front) on the dislocation structure of InSb plates and the structural properties of the plates were analyzed. Using the method of selective etching it was shown that the number of etching pits on the wafers with different orientations differs by approximately an order of magnitude (103 cm–2 for plane (111) and 102 cm–2 for (100)). Number of etch pits for the (100) plane is commensurate with their number in crystals grown in the [112] and [100] directions. Probably, the maximum dislocation density in InSb single crystals can be considered as a material constant, and the increased strength of single crystals grown at lower axial gradients at the crystallization front is related to the formation of a characteristic ensemble of point defects along the dislocation line through diffusion. It is shown that InSb wafers [112] (100) exhibit the best physical and mechanical properties. The results obtained can be used in the manufacture of structures for photodetectors, in particular, in plate processing (cutting, grinding and polishing) to optimize technological processes.

In this study, the field-effect transistor (FET) based on porous silicon (PS) – reduced graphene oxide (rGO) sandwich-like structure is suggested as a sensitive element of the humidity sensor. It is shown that the position of the charge neutrality point (Dirac point) and the ratio between the hole and electron branches of the resistance profile of the PS–rGO-based FET depend significantly on the relative humidity. An increase in air humidity causes a decrease in the electrical resistance and an increase in the capacity of the obtained FET. The sensing ability and dynamic characteristics were analyzed to estimate the sensory properties of the PS–rGO sandwich-like structure. A higher sensitivity of the resistive sensor element than the capacitive has been found. The response time of the obtained sensors to changing relative humidity is about 1 min at room temperature. As a result, the PS–rGO-based FET demonstrates high potential applications in humidity-sensitive devices.

Multi-state electronic dynamics at higher excitation energies is needed for the understanding of a variety of energy rich situations, including chemistry under extreme conditions, vacuum ultraviolet (VUV) induced astrochemistry, and attochemistry. It calls for an understanding of three stages, energy acquisition, dynamical propagation, and disposal. It is typically not possible to identify a basis of uncoupled quantum states that is sufficient for the three stages. The handicap is the large number of coupled quantum states that is needed to describe the system. Progress in quantum chemistry provides the necessary background to the energetics and the coupling. Progress in quantum dynamics takes this as input for the propagation in time. Right now, it seems that we have come of age with potential detailed applications. We here report a demonstration to a coupled electron-nuclear quantum dynamics through a maze of 47 electronic states and with attention to the order in perturbation theory that is indicated using propensity rules for couplings. Close agreement with experimental results for the VUV photodissociation of 14N2 and its isotopomer 14N15N is achieved. We pay special attention to the coupling between two dissociative continua and an optically accessible bound domain. The computations reproduce and interpret the non-monotonic branching between the two exit channels producing N(2D) and N(2P) atoms as a function of excitation energy and its variation with the mass.

Extraordinarily high carrier mobility in graphene has led to many remarkable discoveries in physics and at the same time invoked great interest in graphene-based electronic devices and sensors. However, the poor ON/OFF current ratio observed in graphene field-effect transistors has stymied its use in many applications. Here, we introduce a graphene strain-effect transistor (GSET) with a colossal ON/OFF current ratio in excess of 107 by exploiting strain-induced reversible nanocrack formation in the source/drain metal contacts with the help of a piezoelectric gate stack. GSETs also exhibit steep switching with a subthreshold swing (SS) < 1 mV/decade averaged over ∼6 orders of magnitude change in the source-to-drain current for both electron and hole branch amidst a finite hysteresis window. We also demonstrate high device yield and strain endurance for GSETs. We believe that GSETs can significantly expand the application space for graphene-based technologies beyond what is currently envisioned.