Bonds In Silicon Nitride Research Articles

Local Oscillations of Silicon–Silicon Bonds in Silicon Nitride

Raman spectra of films of nearly stoichiometric amorphous silicon nitride (a-Si3N4) reveal a contribution due to local oscillations of silicon–silicon (Si–Si) bonds. This observation directly confirms that the almost stoichiometric a-Si3N4 contains Si–Si bonds, which, according to theoretical predictions, act as electron and hole traps that are responsible for the memory effect in Si3N4.

Carbon nitride — prospects for ultimate performance of superhard materials

In order to deposit thin solid films containing covalently bonded carbon nitride as a major matrix component, several different techniques for deposition were explored. They included reactive pulsed laser deposition, reactive DC magnetron sputtering and laser ablation of a frozen ethanol/liquid N 2 double layer system. Surface analysis techniques showed that the concentrations of nitrogen were as high as 20 to 25 at% in the bulk and up to 40 at% in the upper layers of the resulting a-C a-CN x films. The covalent bond of nitrogen to carbon was identified. It is similar to the nitrogen bonds in silicon nitride and boron nitride.

The low electric field conduction mechanism of silicon oxide-silicon nitride-silicon oxide interpoly-Si dielectrics

A model for the leakage current of silicon oxide-silicon nitride-silicon oxide (ONO) dielectrics at low electric fields (≂2 MV/cm) was successfully developed. It is proposed that two transition mechanisms occur simultaneously. One is the detrapping of electrons from the silicon dangling bond in amorphous silicon nitride (SiN), which corresponds with the transition of dangling bonds among three possible charge states. The second is the direct tunneling of the detrapped electrons from the SiN to the gate through the thin silicon oxide. Both the location and the energy levels of the defect state are taken into account. The energy level, and the intrinsic time constant of the Si dangling bond and the uniform trap density in SiN, can be obtained by comparing the experimental results of the ONO discharge current with the calculated ones based on the above model. It can be found that the energy levels for negatively charged and neutral Si dangling bonds (E− and E0), with respect to the SiN conduction band, are 1.2 and 2.0 eV, respectively, the intrinsic time constants t− and t0 are 1.0×10−14 and 4.0×10−13 s, respectively, and the uniform trap density is 4.0×1019/cm3. From the energy level difference between E− and E0, we can conclude that the effective correlation energy of the Si dangling bonds in SiN is 0.8 eV, which is consistent with Robertson’s results based on a tight binding calculation.

Nature of the Si and N dangling bonds in silicon nitride

Si and nitrogen dangling bond defects in amorphous silicon nitride a-SIN x :H are most stable in their charged, diamagnetic states. Excitation to their paramagnetic states is found to occur by both charge conversion of Si defects or N defects or by charge transfer between Si and N defects. The stability of charged defects is modelled in terms of potential fluctuations whose magnitude exceeds their positive correlation energy.

ChemInform Abstract: Direct Reaction Pathways for Silicon Nitride Bond Formation in the SiH4‐NH3 Mixture in Gas Phase.

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Reaction ergodography for silicon nitride bond formation by the nitridation of silicon dioxide

ADVERTISEMENT RETURN TO ISSUEPREVArticleNEXTReaction ergodography for silicon nitride bond formation by the nitridation of silicon dioxideAkitomo Tachibana, Yuzuru Kurosaki, Hiroyuki Fueno, Toshiaki Sera, and Tokio YamabeCite this: J. Phys. Chem. 1992, 96, 7, 3029–3033Publication Date (Print):April 1, 1992Publication History Published online1 May 2002Published inissue 1 April 1992https://doi.org/10.1021/j100186a046RIGHTS & PERMISSIONSArticle Views81Altmetric-Citations5LEARN ABOUT THESE METRICSArticle Views are the COUNTER-compliant sum of full text article downloads since November 2008 (both PDF and HTML) across all institutions and individuals. These metrics are regularly updated to reflect usage leading up to the last few days.Citations are the number of other articles citing this article, calculated by Crossref and updated daily. Find more information about Crossref citation counts.The Altmetric Attention Score is a quantitative measure of the attention that a research article has received online. Clicking on the donut icon will load a page at altmetric.com with additional details about the score and the social media presence for the given article. Find more information on the Altmetric Attention Score and how the score is calculated. Share Add toView InAdd Full Text with ReferenceAdd Description ExportRISCitationCitation and abstractCitation and referencesMore Options Share onFacebookTwitterWechatLinked InReddit PDF (1 MB) Get e-Alerts

Luminescence excitation and bleaching involving dangling bonds in silicon nitride

Luminescence excitation and bleaching involving dangling bonds in silicon nitride

First observation of paramagnetic nitrogen dangling-bond centers in silicon nitride.

We report the first definitive identification of nitrogen dangling bonds in silicon nitride. A computer analysis of $^{14}\mathrm{N}$ hyperfine parameters shows that the unpaired electron is strongly localized on the central nitrogen atom and that the unpaired electron's wave function is almost entirely p in character. This is only the second fundamental intrinsic electron-paramagnetic-resonance center to be identified in silicon nitride.

Quantitative infrared study of ultrathin MIS structures by grazing internal reflection

A very sensitive reflection technique well suited for infrared investigations of thin MIS structures is introduced. With this technique a nearly saturating reflectance drop from the Si-O vibration of a 1.3 nm oxide on silicon within a MIS structure was measured at 1240 cm−1. The analytic discussion of the sensitivity amplification of this technique shows that for silicon oxide a sensitivity amplification by a factor of 600 per reflection is feasible over the sensitivity of a transmission measurement. The analytic discussion is verified experimentally for the case of 12 nm silicon nitride film. A method that allows one to determine bond concentrations of thin films within MIS structures is given and tested for the case of hydrogen bonds in silicon nitride.

Reaction ergodography for silicon nitride bond formation in the laser-driven gas-phase reaction

Reaction ergodography using IRC (intrinsic reaction coordinate) as a unique reaction path is studied for silicon nitride bond formation in the gas phase. This is a dehydrogenation reaction. Using a model system, we have obtained the activation energy 55.4 kcal/mol and the exothermic energy 2.8 kcal/mol (CISD+QC/6-31G{sup **}//HF/6-31G{sup *}). This is consistent with the experimentally observed activation energy 39 kcal/mol by Vasilyeva, Ginovker, Popov, and Repinsky (Izv. Sib. Otd. Akad. Nauk SSSR, Ser. Khim. Nauk 1979, 5, 54). The IRC reveals mode-specific vibrational excitation of SiH{sub 4} in the early stage of reaction, and additionally, that of NH{sub 3} just before the transition state, and successive strong charge-transfer interaction in the neighborhood of the transition state. The first finding is in agreement with the recent observations that 10.6 {mu}m (943.4 cm{sup {minus}1}) light emitted from CO{sub 2} laser is efficient for silicon nitride bond formation in the gas phase.

Differences in the electrical properties of the interfaces of PECVD silicon nitride with amorphous and crystalline silicon

An original method is described for the determination of the flatband voltage in metal-insulator-a-Si:H devices based on capacitance-frequency measurements at variable temperature done in the accumulation regime. The comparison with results obtained on c-Si devices shows for the first time that the density of positive fixed charge in PECVD silicon nitride increases when going from amorphous to crystalline and from n to p-type substrate. A model of tunneling of holes from the plasma-irradiated substrate to Si-Si or Si dangling bonds in silicon nitride is proposed to explain our results and others from the literature.

Electron spin resonance study of metal-nitride-silicon structures: Observation of Si dangling bonds with different configurations and trapping properties in silicon nitride

Electron spin resonance (ESR) experiments on large area metal-nitride-crystalline silicon (MNS) structures show that the occupation of silicon dangling bonds in silicon nitride can be modulated under the application of a gate bias. The technique applied simultaneously with capacitance-voltage ( CV) measurements has been used for the identification of specific electronic transitions. In the case of Si-rich silicon nitride, we demonstrate that the ESR line consists of an inhomogeneous distribution of discrete components at different g-values. Trapping of holes observed under negative bias occurs at a site with a g-value of 2.0052, corresponding to a pure Si environment, while electron trapping observed under positive bias occurs at a site with a g-value of 2.0028, corresponding to a pure N environment. The selectivity of the transitions with respect to the bias leads us to attribute different energy levels to each Si dangling bond configuration.

Carborundum parts with silicon nitride bond

Carborundum parts with silicon nitride bond