Bipolar Resistive Switching Research Articles

Self-rectifying and forming-free resistive switching with Cu/BN/SiO2/Pt bilayer device

Selector-free 3D vertical crossbar with low power consumption is necessary for developing high-density memory devices. Sneaking current in these devices is the prime factor for their degradation as they lose power, and there are glitches in data retrieval. In this article, we have successfully illustrated a forming free and self-rectifying cell in a chemically synthesized 2D memristive device based on hexagonal Boron Nitride (h-BN) material. The device performs well with a Rectification Ratio (RR) > 102 with SiO2/BN bi-layer structure at ±1.3 V. The device performed over 20000 cycles at a pulse width of 10 μs. Also, the device endurance decays with a different pulse width of 100 μs and 1 ms. Schottky barrier formation and development of conductive filament of oxygen vacancies are the primary causes for the proposed device to show Rectifying Resistive Switching (RRS) and Bipolar Resistive Switching (BRS), respectively. The device also performs good stability with the temperature range from Room Temperature (RT) to 250 °C. The sneak path concern and thermal stability enable potential applications for neuromorphic computing and future memory technology.

Light-induced multilevel resistive switching in cesium-doped lead-free halide double perovskite memory device

A series of (CH3NH3)2-xCsxAgBiBr6 films (x=0, 0.1, 0.2, 0.3, 0.4) were fabricated on ITO/glass substrates through the sol-gel method. 15 % Cs doping (x=0.3) was the optimal condition for enhancing the film quality and achieving nonvolatile bipolar resistive switching (BRS) performance in the devices. The on/off ratio in the (CH3NH3)1.7Cs0.3AgBiBr6 (Cs-MAABB-3)-based RS device reached 7.7×104, high and low resistance states were maintained for over 104 s. Under different light intensities with a wavelength of 430 nm, six distinct resistance states were recorded at −0.3 V in the Au/Cs-MAABB-3/ITO/glass device. These multilevel states remained after 5000 s and 650 cycles, indicating the excellent retention and endurance of multilevel RS memory in the Au/Cs-MAABB-3/ITO/glass device. The RS behavior in this device followed the trap-controlled space charge-limited current and conductive filament models. Cs-doping increased the concentration of intrinsic vacancies appropriately, leading to a more prominent RS effect. With varying intensities of illumination, the change of Schottky-like barrier at the Au/Cs-MAABB-3 interface, modulated by the photo-induced carriers, affected the multilevel resistance states in the device. The excellent multilevel RS performance was observed for the first time in the Cs-MAABB-3-based device. It presents broad possibilities for improving high-density memory in lead-free halide double perovskite-based devices.

Understanding the Reversible Transition of Unipolar and Bipolar Resistive Switching Characteristics in Solution-Derived Nanocrystalline Au-Co3O4 Thin-Film Memristors.

Nanocrystalline Au-Co3O4 thin films were fabricated through a facile solution-processing method, and voltage-polarity-dependent resistive switching (RS) characteristics including variability of Set/Reset voltages, stability of cycling endurance, and carriers transport mechanism were studied in the Pt/Au-Co3O4/Pt memory devices. The switching voltages of the Set and Reset processes in the bipolar RS memristors exhibited lower variability as compared to the unipolar resistance switching devices. Moreover, the switching performance of cycle-to-cycle endurance in bipolar mode had a smaller fluctuation than those of unipolar switching behavior. Based on the current-voltage curve fitting analysis, it was found that Ohmic-conduction behaviors dominated the carriers transport of low-resistance state regardless of unipolar or bipolar switching behaviors. The carrier transport of high resistance state was governed following Poole-Frenkel emission and Schottky emission mechanisms in the unipolar and bipolar switching modes, respectively. The physical switching mechanism of Pt/Au-Co3O4/Pt memory devices was proposed using the model by means of growth and disruption of conducting filaments, involved in memory effects of thermochemical mechanism and valence change mechanism in the unipolar and bipolar RS, respectively. The proposed model following the finite element method revealed the roles of electrical field distribution and temperature gradient to further clarify the RS mechanism. Our results open a door for understanding and optimizing oxide-based thin-film resistance switching memory devices.

Onset and microscopic origin of resistive random-access memory characteristics on low-cost thermally treated mixed phase CuxO (x = 1,2) on Cu sheet

We demonstrated the resistive random-access memory (RRAM) characteristics in cost-efficient, single-step, and in-situ grown nanostructured mixed-phase CuxO (x = 1, 2) thin films, on a commercially available Cu sheet, fabricated using thermal treatment under ambient conditions. The scanning electron microscopy (SEM) and atomic force microscopy (AFM) measurements explain the surface morphology of grown mixed-phase CuxO thin film with substrate imprints. Fourier-transform Infrared spectroscopy confirmed the mixed phase of Cu2O and CuO of synthesized thin films. The fabricated Al/CuxO/Cu RRAM device showed bipolar digital resistive switching followed by analog resistive switching. The device showed a fast-switching speed of 250 ms, high endurance durability for 2500 cycles, and better retention of 103 s, respectively. The interconnected CuxO with Cu sheet provides efficient charge carrier migration from the bottom electrode to the active layer. The formed defect and trapped site are responsible for the resistive switching behavior. Thus, the present study provides a way to harness the potential of RRAM on either thermally treated Cu sheets or realizing a Cu thin film followed by low-temperature annealing, which can easily be integrated into existing electronic devices for data storage applications.

An investigation on low operating voltage induced self-rectifying multilevel resistive switching in AgNbO3

This study presents a resistive random-access memory (RRAM) based on silver niobate (AgNbO3) perovskite films prepared via sputtering for the first time. The device exhibits a self-rectifying behavior at low operating and switching voltages, with a set voltage of about −0.4 V. Bipolar resistive switching was realized at a low operating voltage and with small set and reset voltage distributions. Compared to previously reported resistive switching perovskite materials, the device displays a superior resistive switching capability while maintaining a uniform memory window of up to 102, excellent endurance of over 104 cycles, and a long retention period of over 106 s. Moreover, the RRAM device exhibits four levels of resistive switching when the compliance current is varied, with each level of resistance state demonstrating uniformity and discrete read windows. The carrier-transport mechanism of the device was elucidated by considering various conduction mechanisms, including Schottky emission and space-charge-limited conduction. The resistive switching behavior was found to follow the conductive filamentary model, which is governed by the migration of oxygen vacancies when an electric field is applied. These outstanding properties of AgNbO3 make it a promising perovskite material option for future nonvolatile multilevel RRAM device applications.

Investigation of Grain Boundary Effects in Sm0.2Ce0.8O2-x Thin Film Memristors.

Cerium-based materials (CeO2-x) are of significant interest in the development of vacancy-modulated resistive switching (RS) memory devices. However, the influence of grain boundaries on the performance of memristors is very limited. To fill this gap, this study explores the influence of grain boundaries in cerium-based thin film resistive random-access memory (RRAM) devices. Sm0.2Ce0.8O2-x (SDC20) thin films were deposited on (100)-oriented Nb-doped SrTiO3 (NSTO) and (110)-oriented NSTO substrates using pulsed laser deposition (PLD). Devices constructed with a Pt/SDC20/NSTO structure exhibited reversible and stable bipolar resistive switching (RS) behavior. The differences in conduction mechanisms between single-crystal and polycrystalline devices were confirmed, with single-crystal devices displaying a larger resistance window and higher stability. Combining the results of XPS and I-V curve fitting, it was confirmed that defects near the grain boundaries in the SDC-based memristors capture electrons, thereby affecting the overall performance of the RRAM devices.

Eco-Friendly Biomemristive Nonvolatile Memory: Harnessing Organic Waste for Sustainable Technology.

Organic material-based bioelectronic nonvolatile memory devices have recently received a lot of attention due to their environmental compatibility, simple fabrication recipe, preferred scalability, low cost, low power consumption, and numerous additional advantages. Resistive random-access memory (RRAM) devices work on the principle of resistive switching, which has the potential for applications in memory storage and neuromorphic computing. Here, natural organically grown orange peel was used to extract biocompatible pectin to design a resistive switching-based memory device of the structure Ag/Pectin/Indium tin oxide (ITO), and the behavior was studied between a temperature range of 10K and 300K. The microscopic characterization revealed the texture of the surface and thickness of the layers. The memristive current-voltage characteristics performed over 1000 consecutive cycles of repeated switching revealed sustainable bipolar resistive switching behavior with a high ON/OFF ratio. The underlying principle of Resistive Switching behavior is based on the formation of conductive filaments between the electrodes, which is explained in this work. Further, we have also designed a 2 × 2 crossbar array of RRAM devices to demonstrate various logic circuit operations useful for neuromorphic computing. The robust switching characteristics suggest possible uses of such devices for the design of ecofriendly bioelectronic memory applications and in-memory computing.

Enhanced resistive switching behaviors of organic resistive random access memory devices by adding polyethyleneimine interlayer

Organic nonvolatile memory devices have garnered significant attention as next-generation electrical memory units owing to their potential for low-cost and straightforward fabrication through a solution process. In this study, we successfully fabricated fully solution-processed organic resistive random access memory (RRAM) devices using poly(3-hexylthiophene-2,5-diyl) (P3HT) and [6,6]-phenyl-C61-butyric acid methyl ester (PCBM) as the resistive switching (RS) layer, with poly(3,4-ethylene-dioxythiophene):poly(styrene sulfonate) (PEDOT:PSS) employed as the top electrode. Additionally, to enhance performance further, a polyethyleneimine (PEIE) interlayer was introduced between the bottom electrode and the P3HT:PCBM RS layer. The resulting organic RRAM devices with the PEIE interlayer exhibited bipolar resistive switching, with improved endurance increasing from 50 to 100 cycles, a retention time of 103 s, and a low SET voltage of 0.7 V. The organic RRAM devices featuring the PEIE interlayer demonstrated superior RS performance attributed to the higher Schottky barrier at the interface between the bottom electrode and the active switching layer, creating an asymmetric structure. I–V curve fitting confirmed that the potential switching mechanism involved Schottky emission in the high-resistance state and Ohmic conduction in the low-resistance state. Our findings suggest that organic RRAM devices with a PEIE interlayer hold promise for stable nonvolatile memory applications.

Sol-Gel Derived ZnO Thin Films with Nonvolatile Resistive Switching Behavior for Future Memory Applications

Herein we report on a facile sol-gel spin-coating technique to fabricate ZnO thin films that grow preferentially along the (002) plane on FTO substrates. By employing the magnetron sputtering technique to deposit a tungsten (W) top metal electrode onto these ZnO thin films, we successfully realize a W/ZnO/FTO memory device that exhibits self-rectifying and forming-free resistive switching characteristics. Notably, the as-prepared device demonstrates impressive nonvolatile and bipolar resistive switching behavior, with a high resistance ratio (RHRS/RLRS) exceeding two orders of magnitude at a reading voltage of 0.1 V. Moreover, it exhibits ultralow set and reset voltages of approximately +0.5 V and −1 V, respectively, along with exceptional durability. In terms of carrier transport properties, the low resistance state of the device is dominated by ohmic conduction, whereas the high resistance state is characterized by trap-controlled space-charge-limited current conduction. This work highlights the potential of the ZnO-based W/ZnO/FTO memory device as a promising candidate for future high-density nonvolatile memory applications.

Metal-organic framework and MXene (ZIF-8:Ti3C2Tx) based organic and inorganic nanocomposite for bio-synaptic applications

Organic and inorganic hybrid materials have drawn more interest in the field of electronic devices. The metal-organic frameworks (MOFs) have emerged as one of the promising hybrid materials for electronic devices. However, their limited electrical conductivity hinders their electronic applications. To overcome these shortcomings, we synthesized MOF:MXene nanocomposite to enhance the stability and electrical conductivity of MOF. In particular, we synthesized and characterized zeolitic imidazolate framework-8 (ZIF-8):MXene (Ti3C2Tx) hybrid nanocomposite. From the application point of view, we demonstrated the analog memory effect and mimicked various synaptic learning functionalities using Ag/ZIF-8:Ti3C2Tx/FTO resistive switching (RS) device. The fabricated device exhibits a good analog-type bipolar RS effect. The device mimics various bio-synaptic properties such as potentiation, depression, excitatory-post synaptic current, and paired-pulse facilitation (PPF) index (%). The inherent non-ideal memristor property was dominated in the device, owing to the double-valued charge-flux relation. The conduction and possible RS mechanisms of the Ag/ZIF-8:Ti3C2Tx/FTO device were reported. These results suggested that the ZIF-8:Ti3C2Tx nanocomposite is a potential nanomaterial for brain-inspired computing applications.

Bias polarity dependent low-frequency noise in ultra-thin AlOx-based magnetic tunnel junctions

We exploit bias polarity dependent low-frequency noise (LFN) spectroscopy to investigate charge transport dynamics in ultra-thin AlOx-based magnetic tunnel junctions (MTJs) with bipolar resistive switching (RS). By measuring the noise characteristics across the entire bias voltage range of bipolar RS, we find that the voltage noise level exhibits an bias polarity dependence. This distinct feature is intimately correlated with reconfiguring of the inherently existing oxygen vacancies (VO..\\documentclass[12pt]{minimal} \\usepackage{amsmath} \\usepackage{wasysym} \\usepackage{amsfonts} \\usepackage{amssymb} \\usepackage{amsbsy} \\usepackage{mathrsfs} \\usepackage{upgreek} \\setlength{\\oddsidemargin}{-69pt} \\begin{document}$${V}_{O}^{..}$$\\end{document}) in as-grown MTJ devices during the SET and RESET switching processes. In addition, we observe two-level random telegraph noise (RTN) with a longer and shorter tunneling length in the high resistance state (HRS) and low resistance state (LRS) at a low bias voltage. The intrinsic voltage fluctuations of RTN arise from the dynamics of electron trapping/de-trapping processes at the VO..\\documentclass[12pt]{minimal} \\usepackage{amsmath} \\usepackage{wasysym} \\usepackage{amsfonts} \\usepackage{amssymb} \\usepackage{amsbsy} \\usepackage{mathrsfs} \\usepackage{upgreek} \\setlength{\\oddsidemargin}{-69pt} \\begin{document}$${V}_{O}^{..}$$\\end{document}-related trap sites. Notably, the RTN magnitude is similar in LRS but nonidentical in that of HRS for different bias polarity. These findings strongly suggest that the inherent VO..\\documentclass[12pt]{minimal} \\usepackage{amsmath} \\usepackage{wasysym} \\usepackage{amsfonts} \\usepackage{amssymb} \\usepackage{amsbsy} \\usepackage{mathrsfs} \\usepackage{upgreek} \\setlength{\\oddsidemargin}{-69pt} \\begin{document}$${V}_{O}^{..}$$\\end{document} are distributed near the top CoFe/AlOx interface in the HRS; in contrast, they are expanded to the middle region of the AlOx in the LRS. More importantly, we demonstrate that the location and distribution of the inherent VO..\\documentclass[12pt]{minimal} \\usepackage{amsmath} \\usepackage{wasysym} \\usepackage{amsfonts} \\usepackage{amssymb} \\usepackage{amsbsy} \\usepackage{mathrsfs} \\usepackage{upgreek} \\setlength{\\oddsidemargin}{-69pt} \\begin{document}$${V}_{O}^{..}$$\\end{document} can be electrically tuned, which plays an essential role in the charge transport dynamics in the ultra-thin AlOx-based MTJs and have significant implications for developing emergent memory and logic devices.

Development of a novel self-healing Zn(II)-metallohydrogel with wide bandgap semiconducting properties for non-volatile memory device application

A rapid and effective strategy has been devised for the swift development of a Zn(II)-ion-based supramolecular metallohydrogel, termed Zn@PEH, using pentaethylenehexamine as a low molecular weight gelator. This process occurs in an aqueous medium at room temperature and atmospheric pressure. The mechanical strength of the synthesized Zn@PEH metallohydrogel has been assessed through rheological analysis, considering angular frequency and oscillator stress dependencies. Notably, the Zn@PEH metallohydrogel exhibits exceptional self-healing abilities and can bear substantial loads, which have been characterized through thixotropic analysis. Additionally, this metallohydrogel displays injectable properties. The structural arrangement resembling pebbles within the hierarchical network of the supramolecular Zn@PEH metallohydrogel has been explored using FESEM and TEM measurements. EDX elemental mapping has confirmed the primary chemical constituents of the metallohydrogel. The formation mechanism of the metallohydrogel has been analyzed via FT-IR spectroscopy. Furthermore, zinc(II) metallohydrogel (Zn@PEH)-based Schottky diode structure has been fabricated in a lateral metal–semiconductor-metal configuration and it’s charge transport behavior has also been studied. Notably, the zinc(II) metallohydrogel-based resistive random access memory (RRAM) device (Zn@PEH) demonstrates bipolar resistive switching behavior at room temperature. This RRAM device showcases remarkable switching endurance over 1000 consecutive cycles and a high ON/OFF ratio of approximately 270. Further, 2 × 2 crossbar array of the RRAM devices were designed to demonstrate OR and NOT logic circuit operations, which can be extended for performing higher order computing operations. These structures hold promise for applications in non-volatile memory design, neuromorphic and in-memory computing, flexible electronics, and optoelectronic devices due to their straightforward fabrication process, robust resistive switching behavior, and overall system stability.

Bipolar and complementary resistive switching induced by barrier regulation based on compliance current

This Letter investigates the effect of barrier regulation by changing compliance current (CC) on resistance switching (RS) modes. The device exhibits bipolar resistive switching (BRS) with low CCs (1, 3, 7, and 12 mA) and complementary resistive switching (CRS) without CC. By analyzing the current conduction mechanism, the variation law of Schottky barrier height under different CCs is studied, and the different RS modes are explained by the degree of nitrogen enrichment in the non-inert electrode. This paper further explores the correlation between BRS and CRS. Endurance tests in different modes show that the device is expected to achieve a multi-mode RS design.

Nonvolatile bipolar resistive switching characteristics of aluminum oxide grown by thermal oxidation processes

This study proposes a bipolar resistive random-access memory (RRAM), which is fabricated using an aluminum oxide (AlO x ) resistive switching (RS) layer. The RRAM shows a large memory window of 106 at a low read voltage of 0.5 V. In addition, high switching speed, long retention time, and superior read-disturb immunity are observed. AlO x layers are prepared by a thermal oxidation growth process. Aluminum metal films deposited on n+-Si wafers are oxidized at O2/(O2 + N2) flow rate ratios of 50%–100%. Al/AlO x /n+-Si device shows no RS behavior when the AlO x is grown in a pure O2 environment. As the O2/(O2 + N2) flow rate ratio decreases to 50%, Al/AlO x :N/n+-Si device reveals stable bipolar RS characteristics. A filamentary mode based on oxygen interstitial and Al vacancy is proposed to explain the difference in electrical characteristics of AlO x devices prepared at different O2 flow rates.

Origin identification and accuracy control of electrode interface-related asymmetrical hysteresis in light-controlled resistive switching of single CH3NH3PbI3 micro/nanowire

Remarkable photoresponse and resistive switching (RS) performance of CH3NH3PbI3 has garnered significant attention. However, precise control over the emergence and polarity of hysteresis loops in bipolar RS remains challenging. Herein, we constructed an individual CH3NH3PbI3 micro/nanowire device configured with two symmetrical Ag electrodes and asymmetrically modulated their electrode interface states by encapsulating only one electrode. We propose an electrode interface-related RS mechanism to modulate the hysteresis features and achieve different types of high-performance light-controlled RS. In an unpacked electrode interface, large potential induces oxidation of Ag to AgI with high resistivity under light and trace moisture, resulting in a high-resistance state. On the other hand, in a packed electrode interface, large potential triggers hole injection into interface traps with the assistance of light, resulting in a low-resistance state. Additionally, reversible Ag/AgI oxidation/reduction-related negative RS and hole injection/ejection-associated positive RS lead to bipolar RS, accompanied by clockwise and counterclockwise hysteresis loops in two directions. Furthermore, performance is entirely determined by illumination intensity and bias amplitude, achieving photomemory. This work unveils the influence of moisture and illumination on electrode interface and the actual origin of hysteresis, while also precisely controlling photomemory performance. Therefore, it provides a specific strategy for designing high-performance light-controlled RS with nonvolatile photomemory.

Resistive switching and synaptic simulation behaviors of epitaxial ZnO/Nb-doped SrTiO3 heterojunction controlled by the substrate orientation

Zinc oxide (ZnO) films were grown epitaxially on Nb-doped SrTiO3 (NSTO) substrates with different orientations using laser pulse deposition to create the (112¯0)ZnO/(100)NSTO, (0002)ZnO/(110)NSTO and (0002)ZnO/(111)NSTO heterojunctions. Epitaxial ZnO films on the (100) NSTO had two orthorgonal domains, resembling the fourfold symmetry of the (100) NSTO substrate. This good matching between the grown ZnO film and NSTO substrate resulted in a lower growth rate, smoother and denser surface, and a higher density of interface defect states. The interface state density was approximately 4.4 × 1012 eV−1cm−2, which was notably higher than that of the other two heterojunctions. Electrical transport studies revealed that ZnO/(100)NSTO heterojunction demonstrated bipolar resistive switching and negative differential resistance (NDR) due to a higher density of donor interface states from contributions of oxygen vacancies, while both the ZnO/(110)NSTO and ZnO/(111)NSTO heterojunction exhibited typical rectifying behavior. The preliminary investigation into synaptic behaviors suggested that (112¯0) ZnO/(100)NSTO heterojunction holds significant potential in brain-inspired neuromorphic computing systems.

Tuneable quantised conductance memory states in TiO2 based resistive switching devices in crossbar geometry for high density memory applications

The tunability and controllability of conductance quantization mediated multilevel resistive switching (RS) memory devices, fabricated in crossbar geometry can be a promising alternative for boosting storage density. Here, we report fabrication of Cu/TiO2/Pt based RS devices in 8 × 8 crossbar geometry, which showed reliable bipolar RS operations. The crossbar devices showed excellent spatial and temporal variability, time retention and low switching voltage (<1 V) and current (∼100 μA). Furthermore, during the reset switching, highly repeatable and reliable integral and half-integral quantized conductance (QC) was observed. The observed QC phenomenon was attributed to the two dimensional confinement of electrons as lateral width of the conducting filament (CF) matches the fermi wavelength. The magnitude and number of the QC steps were found to increase from ∼2.5 to 12.5 and from 5 to 18, respectively by increasing the compliance current (I C) from 50 to 800 μA which also increased the diameter of the CF from ∼1.2 to 3.3 nm. The enhancement in both number and magnitude of QC states was explained using electrochemical dissolution mechanism of CF of varying diameter. A thicker CF, formed at higher I C, undergoes a gradual rupture during reset process yielding a greater number of QC steps compared to a thinner CF. The realisation of QC states in the crossbar Cu/TiO2/Pt device as well as I C mediated tunability of their magnitude and number may find applications in high-density resistive memory storage devices and neuromorphic computing.

Multilevel resistive switching in hydrothermally synthesized FeWO4 thin film-based memristive device for non-volatile memory application

The memristors offer significant advantages as a key element in non-volatile and brain-inspired neuromorphic systems because of their salient features such as remarkable endurance, ability to store multiple bits, fast operation speed, and extremely low energy usage. This work reports the resistive switching (RS) characteristics of the hydrothermally synthesized iron tungstate (FeWO4) based thin film memristive device. The detailed physicochemical analysis was investigated using Rietveld’s refinement, X-ray photoelectron spectroscopy (XPS), field emission scanning electron microscopy (FE-SEM), and transmission electron microscopy (TEM) techniques. The fabricated Ag/FWO/FTO memristive device exhibits bipolar resistive switching (BRS) behavior. In addition, the devices exhibit negative differential resistance (NDR) at both positive and negative bias. The charge-flux relation portrayed the non-ideal or memristive nature of the devices. The reliability in the RS process was analyzed in detail using Weibull distribution and time series analysis techniques. The device exhibits stable and multilevel endurance and retention characteristics which demonstrates the suitability of the device for the high-density non-volatile memory application. The current conduction of the device was dominated by Ohmic and trap controlled-space charge limited current (TC-SCLC) mechanisms and filamentary RS process responsible for the BRS in the device. In a nutshell, the present investigations reveal the potential use of the iron tungstate for the fabrication of memristive devices for the non-volatile memory application.

A bioinspired MXene-based flexible sensory neuron for tactile near-sensor computing

Multifunctional near-sensor computing sensory neurons based on the integration of flexible sensors and memristors hold promise to achieve unprecedented development in large-scale neuromorphic perception circuits and human-machine interaction systems. However, the traditional sensory-memory integrated systems are based on the integration of different device modules, which are subjected to redundant analog-to-digital conversion circuits and poor flexibility. Here, an all MXene-based flexible sensory neuron fabricated by a room temperature energy-efficient, and controllable oxidation preparation technique is reported. The near-sensor computing system is seamlessly integrated a MXene-based pressure sensor array for acquisition of tactile signals with a flexible MXene-based memristor array for simulating the implementation of perceived behavior. The tactile sensor array shows a wide range (0.1–100 kPa), high linear sensitivity (23.9 kPa−1), and the memristor array exhibits repeatable and stable bipolar resistive switching behavior (retention >100 cycles, endurance >103 s) and excellent flexibility (R=1.0 mm). As a conceptual demonstration, our devices realize high-precision recognition of handwritten digit recognition (93.21%) and human motion (97.96%), which demonstrate the feasibility for real-time health monitoring based on signals collected by sensors and artificial neural networks constructed by the memristors. The MXene-based sensor-memristor system offers a prominent contribution towards advanced application of intelligence in electronic skin and wearable electronic equipment.

Nymphaea Alba for Resistive Switching Devices: Exploring the Non‐Volatile Memory and Neuromorphic Computing Applications of the Plant Leaves

AbstractBiomaterial‐based resistive switching memory is one promising technology that could significantly impact the current direction of non‐volatile memory and neuromorphic computing. Given this, we report the fabrication of a resistive switching (RS) device based on Nymphaea Alba as an active switching layer and investigate its RS properties for memory and neuromorphic computing applications. The Nymphaea Alba switching layer was deposited by the conventional doctor blade method. Further, this is characterized by various analytical techniques. The fabricated device showed bipolar RS behavior and demonstrated good non‐volatile memory properties. Additionally, the device mimics various synaptic properties of the human brain, such as potentiation‐depression, Excitatory post‐synaptic current (EPSC), and Paired‐pulse facilitation (PPF). The charge‐flux relation reveals the non‐ideal memristor‐type behavior of the device. The Ohmic and Child's square law dominates the conduction of the device and the filamentary process responsible for the RS process of the device. These results show that the Nymphaea Alba is a promising biomaterial for non‐volatile memory applications.