Beam Evaporation Process Research Articles

Grain Growth Studies of Indium Antimonide Thin Films and Its Application in photovoltaic cell

Compound III-V materials are formed when atoms from group Illb of the periodic table combine with atoms from group Vb. The resulting com pounds are both crystalline and semiconducting and contain an equal proportion of both atom types. The Indium antimonide crystal has been used for infrared applications and for the radiation detector applications. Thin films of InSb with a thickness of about 0.12 micrometer are prepared onto well-cleaned glass substrates by employing an e- beam evaporation process. Indium Antimonide thin films are grown onto well cleaned glass substrates at room temperature on cleaned glass substrate in Hind Hivac- Vacuum Coating unit under a vacuum better than 10<sup>−5</sup> Torr. X-ray diffraction studies confirm the polycrystalline of the films and the films show preferential orientation along the (111) plane. The particle size found to about 1100 micrometer of thin film. In this paper we present some of our results concerning the synthesis and crystal growth of indium antimonide compounds . To carry out the synthesis of InSb a suitable mixing furnace was designed and fabricated.

Facile preparation of catalytically active, microstructured gold patterns on quartz and silicon substrates

Abstract Here we report that “liquid bright gold” (LBG), a precursor for the thermal gilding of ceramics, can be structured using photolithography. No expensive and complicated equipment (such as high vacuum) is needed making the method favorable over electron beam evaporation and sputtering processes. Additionally, the method stands out by its simplicity needing only a few steps to create gold structures within a size range of 50 μm to 1 μm, which in turn consist of either an irregular network or isolated nanoparticles, depending on the treatment. Such hierarchically structured gold patterns could find a variety of applications, as exemplified for the patterned growth of silicon nanowires.

The Deposition of Ni/Cr-Cr<sub>3</sub>C<sub>2</sub> Composite Coatings by Arc-EB Hybrid Technology

The new hybrid technology is a combination of electron beam evaporation and arcevaporation processes, enabling the creation of the anti-erosion multilayer composite coating Ni/Cr- Cr3C2 with different volume of Cr3C2 filling in soft Ni/Cr matrix. The soft matrix made of Ni/Cr alloy and hard filling of Cr3C2 are created at the same time and directly during the electron beam and arc-evaporation process. Changes of the parameters of the hybrid process, i.e. pressure, current of arc discharge and substrate bias voltage Ubias, make it possible to control the volume of Cr3C2 and are a factor in filling the soft Cr/Ni matrix with carbides Cr3C2. With the use of the developed surface treatment hybrid technology, the multilayer composite coating Ni/Cr-Cr3C2 were obtained. For all composite layers created, the material properties, such as morphology, phase and chemical compositions, hardness, and Young modulus were investigated. The paper presents the original technological equipment, methodology, and technological parameters for the creation of the composite coating Ni/Cr-Cr3C2.