Angle-resolved Photoemission Spectroscopy Research Articles

2D electron gas formation on InAs wurtzite nanosheet surfaces

The two-dimensional electron gas (2DEG) that forms on a semiconductor surface can be used to explore a variety of phenomena in quantum physics and plays an important role in nanoscale electronics, such as transistors. Controlling its formation is, thus, relevant. Using angle-resolved photoemission spectroscopy (ARPES) and accumulating the signal over many nanocrystals, we find that on clean InAs nanosheets with non-polar surfaces and wurtzite (WZ) crystal structures, a 2DEG can be observed at the Γ-point. We suggest that the step morphology on the WZ InAs specimens facilitates the appearance of the electron gas, since previous studies on InAs nanowire surfaces with the same crystal facet and a similar defect density did not exhibit a 2DEG. Subsequently, bismuth deposition leads to the disappearance of the 2DEG as well as a shift of the valence band. This is in contrast to previous observations on InAs surfaces, in which metal deposition would lead to the formation of a 2DEG. The control of the 2DEG with the addition of Bi atoms is relevant for applications of InAs nanosheets in quantum technologies. This study also illustrates that ARPES accumulated over several 2D materials oriented randomly around their normal axis can provide valuable information on their band structure with a fast turnover and low irradiation.

Nonsymmorphic symmetry protected nodal lines in layered topological semimetal Ta3GeTe6

Topological semimetals have garnered significant attention due to their distinctive physical properties. However, the ideal material platforms for studying these phenomena remain limited. Here, we report the synthesis and nontrivial topological properties of high-quality van der Waals material Ta3GeTe6. Angle-resolved photoemission spectroscopy studies performed systematically on the as-grown Ta3GeTe6 single crystal along different high-symmetry directions reveal the formation of two nodal lines located near 0.07 and 0.55 eV below EF along the loop X-U-R-S, which arises from band crossings protected by nonsymmorphic symmetry. Furthermore, the nodal lines near the Fermi level along the S-R and S-X directions exhibit a flat feature. The discovery of this material enriches the family of topological nodal line semimetals and provides a promising platform for future investigations into exotic electronic correlation phenomena and potential device applications.

Hidden non-collinear spin-order induced topological surface states

Rare-earth monopnictides are a family of materials simultaneously displaying complex magnetism, strong electronic correlation, and topological band structure. The recently discovered emergent arc-like surface states in these materials have been attributed to the multi-wave-vector antiferromagnetic order, yet the direct experimental evidence has been elusive. Here we report observation of non-collinear antiferromagnetic order with multiple modulations using spin-polarized scanning tunneling microscopy. Moreover, we discover a hidden spin-rotation transition of single-to-multiple modulations 2 K below the Néel temperature. The hidden transition coincides with the onset of the surface states splitting observed by our angle-resolved photoemission spectroscopy measurements. Single modulation gives rise to a band inversion with induced topological surface states in a local momentum region while the full Brillouin zone carries trivial topological indices, and multiple modulation further splits the surface bands via non-collinear spin tilting, as revealed by our calculations. The direct evidence of the non-collinear spin order in NdSb not only clarifies the mechanism of the emergent topological surface states, but also opens up a new paradigm of control and manipulation of band topology with magnetism.

The synthesis and tunable topological properties of Sm-doped (Bi, Sb)2Te2S crystal

Topological insulators exhibit Dirac points in their topological surface states, but often such Dirac points are far from the Fermi level and sometimes even reside outside the bulk band gap. Here, we report the synthesis of a new topological insulator material Sm-doped (Bi, Sb)2Te2S, which has its surface tunable Dirac point exposed within the bulk gap and close to the Fermi level at a minimal distance of 73 meV with a large tunability of 157 meV, as evidenced by angle-resolved photoemission spectroscopy. The compensation doping by Sm creates a nearly insulating bulk and triggers an interesting phenomenon of all-configuration negative magnetoresistance. This signals a nearly compensated state where the bulk transport is mainly via percolation through charge puddles. Our work offers a new material platform suitable for regulating the position of surface Dirac points and exploring unique physical properties of topological insulators.

Effects of plasma oxidation and plasma nitridation on chemical bonding state of AlScN evaluated by AR-HAXPES

The effect of plasma treatment on AlScN films is investigated using angle-resolved hard X-ray photoelectron spectroscopy (HAXPES). As a result, it was observed that the ratio of the oxide component to the nitride component in the AlScN film increased with oxygen plasma treatment. It was also observed that AlScN was less susceptible to oxidation after 1 min of pre-nitridation. Furthermore, the inhibition of oxidation was more pronounced for Sc atoms than for Al atoms. These suggest that the nitridation treatment reduced the number of nitrogen vacancies around Sc atoms. These facts mean that the increase in the on/off ratio of the current in the MIM capacitor can be attributed to the decrease in the number of nitrogen vacancies in the AlScN.

Broken Screw Rotational Symmetry in the Near-Surface Electronic Structure of AB-Stacked Crystals.

We investigate the electronic structure of 2H-NbS_{2} and h-BN by angle-resolved photoemission spectroscopy (ARPES) and photoemission intensity calculations. Although in bulk form, these materials are expected to exhibit band degeneracy in the k_{z}=π/c plane due to screw rotation and time-reversal symmetries, we observe gapped band dispersion near the surface. We extract from first-principles calculations the near-surface electronic structure probed by ARPES and find that the calculated photoemission spectra from the near-surface region reproduce the gapped ARPES spectra. Our results show that the near-surface electronic structure can be qualitatively different from the bulk electronic structure due to partially broken nonsymmorphic symmetries.

Single-hole spectra of Kitaev spin liquids: from dynamical Nagaoka ferromagnetism to spin-hole fractionalization

The dynamical response of a quantum spin liquid upon injecting a hole is a pertinent open question. In experiments, the hole spectral function, measured momentum-resolved in angle-resolved photoemission spectroscopy (ARPES) or locally in scanning tunneling microscopy (STM), can be used to identify spin liquid materials. In this study, we employ tensor network methods to simulate the time evolution of a single hole doped into the Kitaev spin-liquid ground state. Focusing on the gapped spin liquid phase, we reveal two fundamentally different scenarios. For ferromagnetic spin couplings, the spin liquid is highly susceptible to hole doping: a Nagaoka ferromagnet forms dynamically around the doped hole, even at weak coupling. By contrast, in the case of antiferromagnetic spin couplings, the hole spectrum demonstrates an intricate interplay between charge, spin, and flux degrees of freedom, best described by a parton mean-field ansatz of fractionalized holons and spinons. Moreover, we find a good agreement of our numerical results to the analytically solvable case of slow holes. Our results demonstrate that dynamical hole spectral functions provide rich information on the structure of fractionalized quantum spin liquids.

Surface doping manipulation of the insulating ground states in Ta2Pd3Te5 and Ta2Ni3Te5

Abstract Manipulating emergent quantum phenomena is a key issue for understanding the underlying physics and contributing to possible applications. Here we study the evolution of insulating ground states of Ta2Pd3Te5 and Ta2Ni3Te5 under in-situ surface potassium deposition via angle-resolved photoemission spectroscopy. Our results confirm the excitonic insulator character of Ta2Pd3Te5. Upon surface doping, the size of its global gap decreases obviously. After a deposition time of more than 7 min, the potassium atoms induce a metal–insulator phase transition and make the system recover to a normal state. In contrast, our results show that the isostructural compound Ta2Ni3Te5 is a conventional insulator. The size of its global gap decreases upon surface doping, but persists positive throughout the doping process. Our results not only confirm the excitonic origin of the band gap in Ta2Pd3Te5, but also offer an effective method for designing functional quantum devices in the future.

Tin oxide thin films on Ag(111): Thickness and temperature dependent study of surface structure and electronic properties

Growth and structure of tin oxide films on Ag(111) from submonolayer to 10 monolayer equivalent thickness have been studied using low energy electron diffraction (LEED), x-ray photoemission spectroscopy (XPS) and angle-resolved photoemission spectroscopy techniques for room temperature (RT) and high temperature (HT) (573 K). For RT growth, most of the tin is oxidised to form tin oxide (SnOx) as confirmed by XPS where no metallic component is noticed. However, the grown films are not epitaxial or ordered which can be confirmed by no spots in LEED for higher coverage. Metallic Sn along with two oxidation states of Sn are noticed for HT growth, with the surface mainly composed of SnO2. LEED pattern shows the presence of c(2 × 2) and (3 × 1) along with two different hexagonal multidomain type patterns. The electronic structure for lower coverage resembled the Sn/Ag(111) alloy structures for lower coverage. For higher coverages appearance of three bands below 2 eV binding energy was noticed.

Surface spectroscopy and surface–bulk hybridization of Weyl semimetals

Weyl semimetal showing open-arc surface states is a prominent example of topological quantum matter in three dimensions. With the bulk-boundary correspondence present, nontrivial surface-bulk hybridization is inevitable but less understood. Spectroscopies have been often limited to verifying the existence of surface Fermi arcs, whereas its spectral shape related to the hybridization profile in energy-momentum space is not well studied. We present an exactly solvable formalism at the surface for a wide range of prototypical Weyl semimetals. The resonant surface state and the bulk influence coexist as a surface-bulk hybrid and are treated in a unified manner. Directly accessible to angle-resolved photoemission spectroscopy, we analytically reveal universal information about the system obtained from the spectroscopy of resonant topological states. We systematically find inhomogeneous and anisotropic singular responses around the surface-bulk merging borderline crossing Weyl points, highlighting its critical role in the Weyl topology. The response in scanning tunneling spectroscopy is also discussed. The results will provide much-needed insight into the surface-bulk-coupled physical properties and guide in-depth spectroscopic investigation of the nontrivial hybrid in many topological semimetal materials.

Electron Glass Phase with Resilient Zhang-Rice Singlets in LiCu_{3}O_{3}.

LiCu_{3}O_{3} is an antiferromagnetic mixed valence cuprate where trilayers of edge-sharing Cu(II)O (3d^{9}) are sandwiched in between planes of Cu(I) (3d^{10}) ions, with Li stochastically substituting Cu(II). Angle-resolved photoemission spectroscopy (ARPES) and density functional theory reveal two insulating electronic subsystems that are segregated in spite of sharing common oxygen atoms: a Cu d_{z^{2}}/O p_{z} derived valence band (VB) dispersing on the Cu(I) plane, and a Cu 3d_{x^{2}-y^{2}}/O 2p_{x,y} derived Zhang-Rice singlet (ZRS) band dispersing on the Cu(II)O planes. First-principle analysis shows the Li substitution to stabilize the insulating ground state, but only if antiferromagnetic correlations are present. Li further induces substitutional disorder and a 2D electron glass behavior in charge transport, reflected in a large 530meV Coulomb gap and a linear suppression of VB spectral weight at E_{F} that is observed by ARPES. Surprisingly, the disorder leaves the Cu(II)-derived ZRS largely unaffected. This indicates a local segregation of Li and Cu atoms onto the two separate corner-sharing Cu(II)O_{2} sub-lattices of the edge-sharing Cu(II)O planes, and highlights the ubiquitous resilience of the entangled two hole ZRS entity against impurity scattering.

Strain-induced modulation of electronic structure in correlated Dirac semimetal Pv-CaIrO3 epitaxial thin films

Perovskite CaIrO3 is theoretically predicted to be a Dirac node semimetal near the Mott transition, which possesses a considerable interplay between electron correlations and spin–orbit coupling. Electron correlations can significantly tune the behavior of relativistic Dirac fermions. Here, we have grown high-quality perovskite CaIrO3 thin films on different substrates using oxide molecular beam epitaxy to modulate both electron correlations and Dirac electron states. Through in situ angle-resolved photoemission spectroscopy, we demonstrate a systematic evolution of the bandwidth and effective mass of Jeff=1/2 band in perovskite CaIrO3 induced by strain. The bandwidth of the Jeff=1/2 band undergoes an evident increase under in-plane compressive strain, which could be attributed to the weakening of electron correlations. The compressive strain can potentially shift the position of the Dirac node relative to the Fermi level and play a vital role in the transition from hole-type to electron-type transport characteristics. Our work provides a feasible approach for manipulating the topological Dirac electron states by engineering the strength of electron correlations.

Unveiling diverse coordination-defined electronic structures of reconstructed anatase TiO2(001)-(1 × 4) surface

Transition metal oxides (TMOs) exhibit fascinating physicochemical properties, which originate from the diverse coordination structures between the transition metal and oxygen atoms. Accurate determination of such structure-property relationships of TMOs requires to correlate structural and electronic properties by capturing the global parameters with high resolution in energy, real, and momentum spaces, but it is still challenging. Herein, we report the determination of characteristic electronic structures from diverse coordination environments on the prototypical anatase-TiO2(001) with (1 × 4) reconstruction, using high-resolution angle-resolved photoemission spectroscopy and scanning tunneling microscopy/atomic force microscopy, in combination with density functional theory calculation. We unveil that the shifted positions of O 2s and 2p levels and the gap-state Ti 3p levels can sensitively characterize the O and Ti coordination environments in the (1 × 4) reconstructed surface, which show distinguishable features from those in bulk. Our findings provide a paradigm to interrogate the intricate reconstruction-relevant properties in many other TMO surfaces.

Emergence of quantum confinement in topological kagome superconductor CsV3Sb5

Quantum confinement is a restriction on the motion of electrons in a material to specific region, resulting in discrete energy levels rather than continuous energy bands. In certain materials, quantum confinement could dramatically reshape the electronic structure and properties of the surface with respect to the bulk. Here, in the recently discovered kagome superconductors CsV3Sb5, we unveil the dominant role of quantum confinement in determining their surface electronic structure. Combining angle-resolved photoemission spectroscopy (ARPES) measurement and density-functional theory simulation, we report the observations of two-dimensional quantum well states due to the confinement of bulk electron pocket and Dirac cone to the nearly isolated surface layer. The theoretical calculations on the slab model also suggest that the ARPES observed spectra are almost entirely contributed by the top two layers. Our results not only explain the disagreement of band structures between the recent experiments and calculations, but also suggest an equally important role played by quantum confinement, together with strong correlation and band topology, in shaping the electronic properties of this material.

Tracking electron motion within and outside of Floquet bands from attosecond pulse trains in time-resolved ARPES

Floquet engineering has recently emerged as a technique for controlling material properties with light. Floquet phases can be probed with time- and angle-resolved photoelectron spectroscopy (Tr-ARPES), providing direct access to the laser-dressed electronic bands. Applications of Tr-ARPES to date focused on observing the Floquet-Bloch bands themselves, and their build-up and dephasing on sub-laser-cycle timescales. However, momentum and energy resolved sub-laser-cycle dynamics between Floquet bands have not been analyzed. Given that Floquet theory strictly applies in time-periodic conditions, the notion of resolving sub-laser-cycle dynamics between Floquet states seems contradictory—it requires probe pulse durations below a laser cycle that inherently cannot discern the time-periodic nature of the light-matter system. Here we propose to employ attosecond pulse train probes with the same temporal periodicity as the Floquet-dressing pump pulse, allowing both attosecond sub-laser-cycle resolution and a proper projection of Tr-ARPES spectra on the Floquet–Bloch bands. We formulate and employ this approach in ab-initio calculations in light-driven graphene. Our calculations predict significant sub-laser-cycle dynamics occurring within the Floquet phase with the majority of electrons moving within and in-between Floquet bands, and a small portion residing and moving outside of them in what we denote as ‘non-Floquet’ bands. We establish that non-Floquet bands arise from the pump laser envelope that induces non-adiabatic electronic excitations during the pulse turn-on and turn-off. By performing calculations in systems with poly-chromatic pumps we also show that Floquet states are not formed on a sub-laser-cycle level. This work indicates that the Floquet-Bloch states are generally not a complete basis set for sub-laser-cycle dynamics in steady-state phases of matter.

Topological signatures of Mo2TiC2O2

Mo2TiC2 is the Ordered Double Transitional Metal Layered Carbides (ODTMLC) derived from its parent MAX phases Mo2TiAlC2 by a wet chemical etching. Its oxidation was done by a new ablated plasma thrust method in which the MXenes were at 750 °C under an oxygen background in the pulsed laser deposition chamber. The reflective high electron energy diffraction technique assures the oxidation at the ambient gas pressure p = 0.1 mbar, which was described in the previous paper. The obtained Mo2TiC2O2 was transferred for their topological test under angle-resolved photoemission spectroscopy, circular dichroism test, and Chemical Potential (CP) analysis. An indirect energy bandgap of 125 meV was obtained. The sine function of α along with period π and β with period 2π shows that there is a possibility of helical spin textures in both α (electron-like pocket around Γ̄) and β (elliptical electron-like pocket around M̄). The CP analysis shows the possibility of at least 100 meV bandgap creation on a single surface so that the surface charges will flow without any effect of bulk. The Mo2TiC2O2 can be used as topological insulating material.

Pioneering preparation and analysis of a clean surface on a microcrystal, mined by a focused ion beam

We demonstrate a series of procedures to prepare a clean surface of micro-sized graphite, mined from a bulk flake and securely affixed onto a macroscopic Si plate by focused ion beam scanning electron microscope. Analyses of structure and electronic (chemical) states were made using micro-beam X-ray photoelectron spectroscopy and angle-resolved photoemission spectroscopy. At the surface of the micro graphite, the band dispersion from a single-domain structure was observed. The proposed methodology showcases its capability to produce clean and high-quality micro samples suitable for surface-sensitive analyses. This technique paves the way to investigate surfaces of unexplored microcrystals embedded in complex materials.

High-resolution MHz time- and angle-resolved photoemission spectroscopy based on a tunable vacuum ultraviolet source.

The time- and angle-resolved photoemission spectroscopy (trARPES) allows for direct mapping of the electronic band structure and its dynamic response on femtosecond timescales. Here, we present a new ARPES system, powered by a new fiber-based femtosecond light source in the vacuum ultraviolet range, accessing the complete first Brillouin zone for most materials. We present trARPES data on Au(111), polycrystalline Au, Bi2Se3, and TaTe2, demonstrating an energy resolution of 21meV with a time resolution of <360fs, at a high repetition rate of 1MHz. The system is integrated with an extreme ultraviolet high harmonic generation beamline, enabling an excellent tunability of the time-bandwidth resolution.

Observation of novel in-gap states on alkali metal dosed Ti2O3 film

Alkali metal dosing has nowadays been extensively used in angle-resolved photoemission spectroscopy (ARPES) for the in situ surface electron doping of materials to provide access to the unoccupied states. This technique also gives rise to nontrivial physical phenomena, such as the appearance of quantum well states and effects due to alkali metal intercalation. Here, we uncovered a previously unobserved type of electronic behavior induced by alkali metal dosing. By employing ARPES to study the evolution of the electronic structure of the Ti2O3 thin film upon rubidium (Rb) dosing, we found that the electron chemical potential of the system remains unchanged throughout the process. Interestingly, a series of electron-like band dispersions first appear with Rb dosing. A further increase in the Rb dosage leads to the eventual disappearance of the electron-like bands and the emergence of a set of hole-like bands. Our finding enriches the phenomenology brought about by alkali metal surface dosing, suggesting a novel functionality of this popular surface doping technique.

A versatile laser-based apparatus for time-resolved ARPES with micro-scale spatial resolution.

We present the development of a versatile apparatus for 6.2eV laser-based time and angle-resolved photoemission spectroscopy with micrometer spatial resolution (time-resolved μ-ARPES). With a combination of tunable spatial resolution down to ∼11 μm, high energy resolution (∼11meV), near-transform-limited temporal resolution (∼280fs), and tunable 1.55eV pump fluence up to 3 mJ/cm2, this time-resolved μ-ARPES system enables the measurement of ultrafast electron dynamics in exfoliated and inhomogeneous materials. We demonstrate the performance of our system by correlating the spectral broadening of the topological surface state of Bi2Se3 with the spatial dimension of the probe pulse, as well as resolving the spatial inhomogeneity contribution to the observed spectral broadening. Finally, after in situ exfoliation, we performed time-resolved μ-ARPES on a ∼30 μm flake of transition metal dichalcogenide WTe2, thus demonstrating the ability to access ultrafast electron dynamics with momentum resolution on micro-exfoliated materials.