Band-like Charge Transport Research Articles

Enhanced Performance of P-Channel CuIBr Thin-Film Transistor by ITO Surface Charge-Transfer Doping.

The process development and optimization of p-type semiconductors and p-channel thin-film transistors (TFTs) are essential for the development of high-performance circuits. In this study, the Br-doped CuI (CuIBr) TFTs are proposed by the solution process to control copper vacancy generation and suppress excess holes formation in p-type CuI films and improve current modulation capabilities for CuI TFTs. The CuIBr films exhibit a uniform surface morphology and good crystalline quality. The on/off current (ION/IOFF) ratio of CuIBr TFTs increased from 103 to 106 with an increase in the Br doping ratio from 0 to 15%. Furthermore, the performance and operational stability of CuIBr TFTs are significantly enhanced by indium tin oxide (ITO) surface charge-transfer doping. The results obtained from the first-principles calculations well explain the electron-doping effect of ITO overlayer in CuIBr TFT. Eventually, the CuIBr TFT with 15% Br content exhibits a high ION/IOFF ratio of 3 × 106 and a high hole field-effect mobility (μFE) of 7.0 cm2 V-1 s-1. The band-like charge transport in CuIBr TFT is confirmed by the temperature-dependent measurement. This study paves the way for the realization of transparent complementary circuits and wearable electronics.

Modulating the Structure and Optoelectronic Properties of Solution-Processed Bismuth-Based Nanocrystals.

Bismuth-based chalcogenides have emerged as promising candidates for next-generation, solution-processable semiconductors, mainly benefiting from their facile fabrication, low cost, excellent stability, and tunable optoelectronic properties. Particularly, the recently developed AgBiS2 solar cells have shown striking power conversion efficiencies. High performance bismuth-based photodetectors have also been extensively studied in the past few years. However, the fundamental properties of these Bi-based semiconductors have not been sufficiently investigated, which is crucial for further improving the device performance. Here, we introduce multiple time-resolved and steady-state techniques to fully characterize the charge carrier dynamics and charge transport of solution-processed Bi-based nanocrystals. It was found that the Ag-Bi ratio plays a critical role in charge transport. For Ag-deficient samples, silver bismuth sulfide thin films behave as localized state induced hopping charge transport, and the Ag-excess samples present band-like charge transport. This finding is crucial for developing more efficient Bi-based semiconductors and optoelectronic devices.

Bidirectional π − π stacking for near-infrared photothermal effects and photo-thermo-electric conversion in a semiconductive hydroxamate coordination polymer

Photo-thermo-electric conversion is an emerging technology for utilizing solar energy. As the main component, photothermal materials play a significant role in achieving high conversion efficiency from sunlight to electrical energy. Organic photothermal materials have attracted intense attention recently due to their excellent photothermal efficiency and recycling capabilities. However, broad sunlight absorption in organics heavily relies on the realization of intramolecular or intermolecular charge transfer. Exploring more versatile and efficient methods to construct materials with broad sunlight absorption remains a great challenge. Herein, we report a novel photothermal compound from the perspective of modulating molecular assembly structure. By combining two distinct metal ions, Ba2+ and Mn2+, with the planar ligand H2ONDI, a new coordination polymer, {[BaMn(ONDI)2(H2O)3]⋅H2O}n (1), can be obtained. This coordination polymer exhibits rare bidirectional π−π stacking columns along both the a and b axis. The tightly bidirectional arrangement of ligands in 1 results in a broad optical absorption from the ultraviolet region to the near-infrared area, leading to intriguing near-infrared photothermal effects under irradiation of a laser of 808 nm with a efficiency of 42.3 %. By integrating with thermoelectric devices, 1 shows good application potential in the field of photo-thermo-electric conversion, with the maximum open circuit voltage reaching 313 mV under the irradiation of 1 sun. Furthermore, 1 displays semiconducting behavior because the presence of bidirectional π−π stacking columns facilitates charge transport along two directions, including hopping and band-like charge transport.

Low Contact Resistance Organic Single-Crystal Transistors with Band-Like Transport Based on 2,6-Bis-Phenylethynyl-Anthracene.

Contact resistance has become one of the main bottlenecks that hinder further improvement of mobility and integration density of organic field-effect transistors (OFETs). Much progress has been made in reducing contact resistance by modifying the electrode/semiconductor interface and decreasing the crystal thickness, however, the development of new organic semiconductor materials with low contact resistance still faces many challenges. Here, 2,6-bis-phenylethynyl-anthracene (BPEA) is found, which is a material that combines high mobility with low contact resistance. Single-crystal BEPA OFETs with a thickness of ≈20nm demonstrated high mobility of 4.52cm2V-1s-1, contact resistance as low as 335Ωcm, and band-like charge transport behavior. The calculated compatibility of the EHOMO of BPEA with the work function of the Au electrode, and the decreased |EHOMO-ΦAu| with the increase of external electric field intensity from source to gate both contributed to the efficient charge injection and small contact resistance. More intriguingly, p-type BPEA as a buffer layer can effectively reduce the contact resistance, improve the mobility, and meanwhile inhibit the double-slope electrical behavior of p-channel 2,6-diphenyl anthracene (DPA) single-crystal OFETs.

A transparent p-type semiconductor designed via a polarizability-enhanced strongly correlated insulator oxide matrix.

Electron-transporting transparent conducting oxides (TCOs) are a commercial reality, however, hole-transporting counterparts are far more challenging because of limited material design. Here, we propose a strategy for enhancing the hole conductivity without deteriorating the band gap (Eg) and workfunction (Φ) by Cu incorporation in a strongly correlated NiWO4 insulator. The optimal Cu-doped NiWO4 (Cu0.185Ni0.815WO4) exhibits a resistivity reduction of ∼109 times versus NiWO4 as well as band-like charge transport with the hole mobility approaching 7 cm2 V-1 s-1 at 200 K, a deep Φ of 5.77 eV, and Eg of 2.8 eV. Experimental and theoretical data reveal that the strength of the electron correlation in NiWO4 is unaffected by Cu incorporation, while the promoted polarizability weakens electron-phonon coupling, promoting the formation of large polarons. Quantum dot light-emitting and oxide p/n junction devices incorporating Cu0.185Ni0.815WO4 exhibit remarkable performances, demonstrating that our approach can be deployed to discover new p-type TCOs.

(Invited) Record-High Charge Carrier Mobilities in 2D Covalent- and Metal- Organic Frameworks

Organic based 2D layered materials (2DLMs) including 2D covalent and metal organic frameworks (COFs and MOFs) are promising candidates for traditional applications in gas storage and separation as well as catalysis. This is due to the long-range crystalline order that can be achieved in them as well as their tunable porosity and chemistry. Synthetic chemistry efforts aiming an enhanced coupling between their building block constituents have recently led to the design of (semi-)conducting MOFs and COFs displaying high conductivities and record charge carrier mobilities. These achievements have opened the path for their application in opto-electronics. Yet, despite being a critical aspect for the development of 2DLM based electronics, understanding the true nature of charge transport in these novel materials by stabilising reliable structure-property-function relations is largely unexplored.Here I will present time-resolved high-frequency (terahertz) conductivity studies of state-of-the-art organic based 2DLMs materials revealing semiconducting behaviour and record charge carrier mobilities. First, I will present a detailed characterization for the electronic properties of Zn– and Cu–phthalocyanine-based pyrazine-linked 2D COFs [1,2]. These 2D COFs, synthesized by condensation of metal–phthalocyanine (M = Zn and Cu) and pyrene derivatives, are obtained as polycrystalline-layered semiconductors displaying p-type doping and a band gap of ∼1.2 eV. Hall effect measurements (dc limit) and terahertz (THz) spectroscopy (ac limit) in combination with density functional theory (DFT) calculations demonstrate that varying metal center from Cu to Zn in the phthalocyanine moiety has a negligible effect in the conductivity (∼5 × 10–7 S/cm), charge carrier density (∼1012 cm–3), charge carrier scattering rate (∼3 × 1013 s–1), and effective mass (∼2.3m0) of majority carriers (holes). However, both samples reveal slightly different mobilities that can be attributed to charge carrier localization at crystalline grain boundaries. Furthermore we analyse the effect of iodine doping on the Zn based 2D COFs. The resultant 2D c-COF ZnPc-pz-I2 maintains its structural integrity and displays enhanced conductivity by 3 orders of magnitude, as a result of improved charge carrier concentrations. Hall effect reveal a charge carrier mobility reaching ∼22 cm2/Vs for ZnPc-pz-I2, which represent a record value for 2D c-COFs. An improved mobility upon doping can be traced to an increase in scattering time for free charge carriers, indicating that scattering mechanisms limiting the mobility are mitigated by doping.In the second part of my talk, I present the results concerning a Fe3(THT)2 (THT=2,3,6,7,10,11-hexathioltriphenylene) 2D MOFs [3]. The π-d conjugated samples, synthesized through interfacial method at room temperature, are obtained as a large-area, free-standing films with tunable geometry (size and thickness). The Fe3(THT)2 films are porous (specific surface area of 526±5 m2/g) and semiconducting (with a ~250 meV direct bandgap), and remarkably display band-like charge transport. This finding is directly demonstrated from the Drude-type high-frequency (terahertz) photo-conductivity response obtained in the samples; revealing free-moving, delocalized charge carriers displaying ~220 cm2/Vs mobilities at room temperature; a record charge carrier mobility for MOFs. The temperature dependence of the mobility reveals that the main scattering mechanism limiting the mobility and hence band-like charge transport in this material is related to impurity scattering, so that material improvements may further increase the mobility.The demonstration of band-like charge transport and record-high mobilities in semiconducting 2D COFs and MOFs reveal the potential of (porous) electrically conductive 2DLMs to be employed as active materials in opto-electronics devices.

Zeolites as a Class of Semiconductors for High-Performance Electrically Transduced Sensing.

Zeolites are widely used as catalysts and adsorbents in the chemical industry, but their potential for electronic devices has been stunted to date, as they are commonly recognized as electronic insulators. Here, we have for the first time demonstrated that Na-type ZSM-5 zeolites are ultrawide-direct-band-gap semiconductors based on optical spectroscopy, variable-temperature current-voltage characteristics, and photoelectric effect as well as electronic structure theoretical calculations and further unraveled the band-like charge transport mechanism in electrically conductive zeolites. The increase in charge-compensating Na+ cations in Na-ZSM-5 decreases the band gap and affects its density of states, shifting the Fermi level close to the conduction band. Remarkably, the semiconducting Na-ZSM-5 zeolites have been first applied for constructing electrically transduced sensors that can sense trace-level (77 ppb) ammonia with unprecedentedly high sensitivity, negligible cross-sensitivity, and high stability under moisture ambient conditions compared with conventional semiconducting materials and conductive metal-organic frameworks (MOFs). The charge density difference shows that the massive electron transfer between NH3 molecules and Na+ cations ascribed to Lewis acid sites enables electrically transduced chemical sensing. This work opens a new era of zeolites in applications of sensing, optics, and electronics.

Bandlike Transport in FaPbBr3 Quantum Dot Phototransistor with High Hole Mobility and Ultrahigh Photodetectivity.

Halide perovskites have been widely explored for numerous optoelectronic applications among which phototransistors have appeared as one of the most promising light signal detectors. However, it is still a great challenge to endow halide perovskites with both mobility and high photosensitivity because of their high sensitivity to moisture in ambient atmosphere. Here, we explore an FAPbBr3 perovskite quantum dot (QD) phototransistor with bandlike charge transport and measure a dark hole mobility of 14.2 cm2 V-1 s-1 at ambient atmosphere. Attaining both high mobility and good optical figures of merit, a detectivity of ∼1016 Jones is achieved, which is a record for halide perovskite nanocrystals. Simple A-site salt (FABr) treatments offer a mechanism for connecting between perovskite QDs for better charge transfer in high-quality devices. All of these important properties are superior to most advanced inorganic semiconductor phototransistors, indicating a promising future in optoelectronic applications.

Why Hybrid Tin-Based Perovskites Simultaneously Improve the Structural Stability and Charge Carriers' Lifetime: Ab Initio Quantum Dynamics.

Much effort has been dedicated to boost the development of lead-free perovskite solar cells. However, their performance and stability are still much less competitive to the lead-bearing counterparts. By exploiting a mixed Sn-Ge cation strategy for the development of lead-free perovskites, we perform ab initio electronic structure calculations and quantum dynamics simulations on MASn0.5Ge0.5I3 and compare them to MASnI3. The calculations demonstrate that the hybrid cation strategy can improve simultaneously the perovskite stability and the lifetime of charge carriers. The stability increases due to a larger space of possible structures within the favorable range of the structural parameters, such as the Goldschmidt tolerance and octahedron factors. By exploring the larger structure space, mixed perovskites find stable configurations with lower free energies and better fitting components that exhibit reduced fluctuations around the equilibrium geometries. Charge carriers live longer in mixed perovskites because cation mixing results in an additional and moderate disorder that separates electrons and holes, reducing their interactions while still maintaining efficient band-like charge transport. These general and fundamental principles established by the analysis of the simulation results are useful for the design of advanced materials for solar energy and construction of optoelectronic devices.

Alignment of linear polymeric grains for highly stable N-type thin-film transistors

Summary Temperature-insensitive properties are attractive for most electronics, including polymeric semiconducting devices. Especially, polymeric field-effect transistors (FETs) with high mobility have been important research targets due to their broad applications. However, polymeric FETs with stable charge transport operating at extremely cold or hot zones are faced with enormous challenges. In this study, the polyacrylonitrile was found to significantly tune the sizes of pre-aggregates of polymers in solutions and the crystallinity of the polymeric films. The orientation of 5–25 μm linear grains in the films were prepared through the bar-coating process with polyacrylonitrile as an additive, which stabilized the electron mobility over a wide range of temperatures. The linear-grain morphology of the film contributed to reducing the holes and grain boundaries in the transport paths of carriers. Typically, the top-gate FETs based on P(NDI2OD-T2) displayed a stable electron transporting behavior from 200 to 460 K, with mobility greater than 3.5 cm2V−1s−1.

Charge Carrier Dynamics upon Sub-bandgap Excitation in Methylammonium Lead Iodide Thin Films: Effects of Urbach Tail, Deep Defects, and Two-Photon Absorption

To further understand the optoelectronic properties of metal halide perovskites, we investigate sub-bandgap absorption in methylammonium lead iodide (MAPbI3) films. Charge carrier dynamics are studied using time-resolved microwave conductivity measurements using sub-bandgap excitation. From changes in the decay dynamics as a function of excitation energy and intensity, we have identified three regimes: (i) Band-like charge transport at photon energies above 1.48 eV; (ii) a transitional regime between 1.48 and 1.40 eV; and (iii) below 1.40 eV localized optically active defects (8 × 1013 cm-3) dominate the absorption at low intensities, while two-photon absorption is observed at high intensities. We determined an Urbach energy of approximately 11.3 meV, indicative of a low structural and/or thermal disorder. Surprisingly, even excitation 120 meV below the bandgap leads to efficient charge transfer into electron (C60) or hole (spiro-OMeTAD) transport layers. Therefore, we conclude that for MAPbI3, the band tail states do not lead to nonradiative losses.

Superradiant emission from self-assembled light emitters: From molecules to quantum dots

Abstract

Performance of Mixed Quantum-Classical Approaches on Modeling the Crossover from Hopping to Bandlike Charge Transport in Organic Semiconductors.

In the present study, several mixed quantum-classical (MQC) methods are applied to on-the-fly nonadiabatic molecular dynamics simulations of hole transport in molecular organic semiconductors (OSCs). The tested MQC methods contain the mean-field Ehrenfest (MFE), trajectory surface hopping (TSH) approaches based on Tully's fewest switches surface hopping (FSSH) and the global flux surface hopping (GFSH), the latter in the diabatic/adiabatic representation, and a Landau-Zener type trajectory surface hopping (LZSH). We also tested several correction schemes which were proposed to identify trivial crossings and to remove unphysical long-range charge transfers due to decoherence corrections. In addition, several cost-effective approaches for the nuclear velocity adjustment after an energy-allowed/energy-forbidden hop are investigated with respect to detailed balance and internal consistency conditions. To model a broad spectrum of OSCs with different charge transport characteristics, we derived from the anthracene structural model the construction of two additional models by uniformly scaling down the electronic couplings by the factors of 0.1 and 0.5. Anthracene shows a bandlike charge transport mechanism, characterized by slightly delocalized charge carriers 'diffusing' through the crystal. For smaller couplings, the mechanism changes to a hopping type, characteristically differing in the charge delocalization and temperature dependence. The MFE and corrected adiabatic TSH approaches are able to quantitatively reproduce the expected behavior, while the diabatic LZSH method fails for large couplings, as do approaches which are based on the hopping of localized charge between neighboring sites. Moreover, we find that while the hole mobility of the anthracene crystal simulated using the celebrated Marcus theory is in good agreement with the experimental value, its agreement has to be regarded as an accident due to the overestimation of the prefactor in the Marcus rate equation.

Demonstration of a Broadband Photodetector Based on a Two-Dimensional Metal-Organic Framework.

Metal-organic frameworks (MOFs) are emerging as an appealing class of highly tailorable electrically conducting materials with potential applications in optoelectronics. Yet, the realization of their proof-of-concept devices remains a daunting challenge, attributed to their poor electrical properties. Following recent work on a semiconducting Fe3 (THT)2 (NH4 )3 (THT: 2,3,6,7,10,11-triphenylenehexathiol) 2D MOF with record-high mobility and band-like charge transport, here, an Fe3 (THT)2 (NH4 )3 MOF-based photodetector operating in photoconductive mode capable of detecting a broad wavelength range from UV to NIR (400-1575 nm) is demonstrated. The narrow IR bandgap of the active layer (≈0.45 eV) constrains the performance of the photodetector at room temperature by band-to-band thermal excitation of charge carriers. At 77 K, the device performance is significantly improved; two orders of magnitude higher voltage responsivity, lower noise equivalent power, and higher specific detectivity of 7 × 108 cm Hz1/2 W-1 are achieved under 785 nm excitation. These figures of merit are retained over the analyzed spectral region (400-1575 nm) and are commensurate to those obtained with the first demonstrations of graphene- and black-phosphorus-based photodetectors. This work demonstrates the feasibility of integrating conjugated MOFs as an active element into broadband photodetectors, thus bridging the gap between materials' synthesis and technological applications.

Band-like transport in small-molecule thin films toward high mobility and ultrahigh detectivity phototransistor arrays

With the fast development of organic electronics, organic semiconductors have been extensively studied for various optoelectronic applications, among which organic phototransistors recently emerged as one of the most promising light signal detectors. However, it is still a big challenge to endow organic phototransistors with both high mobility and high light-sensitivity because the low mobility of most organic photoresponsive materials limits the efficiency of transporting and collecting charge carriers. We herein report band-like charge transport in vacuum-deposited small-molecule thin films for organic phototransistor arrays which can be operated at very low dark currents (~10−12 A). Both high mobility and excellent optical figures of merit including photosensitivity, photoresponsivity and detectivity are achieved, wherein, unprecedentedly, a detectivity greater than 1017 cm Hz1/2 W−1 is obtained. All these key parameters are superior to state-of-the-art organic phototransistors, implying a great potential in optoelectronic applications.

High-mobility band-like charge transport in a semiconducting two-dimensional metal–organic framework

Metal-organic frameworks (MOFs) are hybrid materials based on crystalline coordination polymers that consist of metal ions connected by organic ligands. In addition to the traditional applications in gas storage and separation or catalysis, the long-range crystalline order in MOFs, as well as the tunable coupling between the organic and inorganic constituents, has led to the recent development of electrically conductive MOFs as a new generation of electronic materials. However, to date, the nature of charge transport in the MOFs has remained elusive. Here we demonstrate, using high-frequency terahertz photoconductivity and Hall effect measurements, Drude-type band-like transport in a semiconducting, π-d conjugated porous Fe3(THT)2(NH4)3 (THT, 2,3,6,7,10,11-triphenylenehexathiol) two-dimensional MOF, with a room-temperature mobility up to ~ 220 cm2 V-1 s-1. The temperature-dependent conductivity reveals that this mobility represents a lower limit for the material, as mobility is limited by impurity scattering. These results illustrate the potential for high-mobility semiconducting MOFs as active materials in thin-film optoelectronic devices.

(Keynote) Physics, Materials and Applications of High-Mobility Organic Transistor Circuits

Development of functional materials and understanding of the microscopic mechanisms mutually benefit through their close interaction. To accelerate development of organic semiconductor devices for industrial application to flexible and printed electronics, it has been essential to understand the mechanism of charge transport in conjunction with molecular-scale charge transfer. We examine the idea that high-mobility charge transport in newly developed solution-crystalized organic transistors is caused by band-like charge transport, using several different methods to probe coherence in the electronic charge. These materials, being essentially different from conventional organic semiconductors with basically incoherent hopping-like transport, often show high values of mobility exceeding 10 cm2/Vs so that high-speed organic transistor circuits are realized. We first employ Hall-effect measurement which differentiates the coherent band transport from site-to-site hopping. Rubrene single crystal transistors were the first to show the Hall voltage obviously indicating the band transport with the mobility exceeding 10 cm2/Vs, whereas the result of pentacene single crystal transistors with the mobility around 1 cm2/Vs suggested somewhat intermediate between coherent and incoherent charge transport. An interesting crossover from hopping-like to band-like transport is also found by gradually changing temperature and external pressure, clearly indicating involvement of intermolecular phonons. Stimulated by the experiments in the early stage, such materials as decyldinaphthobenzo-dithiophene derivatives (Cn-DNBDT) are newly synthesized to stabilize the molecular position in the crystal form by introducing steric hindrance in their p-conjugated cores. With the development of solution-crystallization method, arrays of the single crystal transistors are formed to the size of wafer scale on plastic substrates. The mobility is as high as 20 cm2/Vs for p-type compound and 4 cm2/Vs for an n-type compound. We measured spin relaxation time of the electric-field induced carriers down to 4.2 K using the large-area ultra-thin single-crystal transistors, so that electron-spin relaxiation is precisely investigated. We found that the spin-relaxation follows the Elliott-Yafet mechanism so that the spin life time is consistently elongated at low temperatures due to reduced phonon scattering via spin-orbit coupling. The result suggest that charge carrier mobility can as high as 650 cm2/Vs with minimized phonon scattering at the low temperature. This presentation also focuses on recent development of key technologies for printed LSIs which can provide future low-cost platforms for RFID tags, AD converters, data processors, and sensing circuitries. Such prospect bears increasing reality because of recent research innovations in the field of material chemistry, charge transport physics, and solution processes of printable organic semiconductors. With excellent chemical and thermal stability in recently developed new materials, we are developing simple integrated devices based on CMOS using p-type and n-type printed organic FETs. Particularly important are new processing technologies for continuous growth of the organic single-crystalline semiconductor “wafers” from solution and for lithographical patterning of semiconductors and metal electrodes. Successful rectification and identification are demonstrated at 13.56 MHz with printed organic CMOS circuits.

Crossover from Hopping to Band-Like Charge Transport in an Organic Semiconductor Model: Atomistic Nonadiabatic Molecular Dynamics Simulation.

The mechanism of charge transport (CT) in a 1D atomistic model of an organic semiconductor is investigated using surface hopping nonadiabatic molecular dynamics. The simulations benefit from a newly implemented state tracking algorithm that accounts for trivial surface crossings and from a projection algorithm that removes decoherence correction-induced artificial long-range charge transfer. The CT mechanism changes from slow hopping of a fully localized charge to fast diffusion of a polaron delocalized over several molecules as electronic coupling between the molecules exceeds the critical threshold V ≥ λ/2 (λ is the reorganization energy). With increasing temperature, the polaron becomes more localized and the mobility exhibits a “band-like” power law decay due to increased site energy and electronic coupling fluctuations (local and nonlocal electron–phonon coupling). Thus, reducing both types of electron–phonon coupling while retaining high mean electronic couplings should be part of the strategy toward discovery of new organics with high room-temperature mobilities.

Band-Like Carrier Transport at the Single-Crystal Contact Interfaces between 2,5-Difluoro-7,7,8,8-tetracyanoquinodimethane and Electron Donors.

Some heterojunction interfaces formed with molecular solids show metal-like transport behavior. In order to clarify the requirement, interfaces are fabricated by lamination of single-crystal electron-accepting 2,5-difluoro-7,7,8,8-tetracyanoquinodimethane (F2TCNQ) and electron-donating molecules with a wide range of ionization potentials. Carrier injection between the acceptor and donor crystals leads to highly conducting interfaces, some of which exhibited band-like charge transport behaviors. Combinations with weak donors also resulted in interfaces with band-like transport properties. Accordingly, band-like conduction was achieved for interfaces where the donor and acceptor crystals do not have well-matched band energies. The results indicate that the wide range of candidates have great potential for modification of the electronic structure of organic crystals. The present method is expected to enable control of the electronic properties of the interface.

60]PCBM single crystals: remarkably enhanced band-like charge transport, broadband UV-visible-NIR photo-responsivity and improved long-term air-stability

[60]PCBM single crystals were prepared to understand their intrinsic photo-responsivity, stability, and charge transport properties.