DRAM memory fabrication has been the driving force behind CMOS technology development until now. The emphasis in process development has mostly been on the enhancement of lithographic resolution and transistor definition. With the emergence of more complicated CMOS logic devices, however, an increasing fraction of the resources spent on process development is being allocated to so-called back-end features, such as interconnection and planarization. Some aspects of CMOS logic as a technology driver are discussed. Attention is paid to the role of European projects (JESSI, ESPRIT) in the generation and assessment of new technologies. Various application fields are reviewed. The various back-end modules (pre-metal and inter-metal planarization, contacts and vias, interconnect metal, silicides, barrier layers, anti-reflective coatings) are considered.
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