In IC research centers over the past two years, the Atomic Force Microscope (AFM) has become a fairly common tool. Nondestructive imaging with nanometer resolution on uncoated samples in ambient conditions is proving to have a wide range of applications in IC research. Also, during this same period important advances have been made in scanning probe microscopy, particularly relating to atomic force probes. AFM technology has now found acceptance in IC manufacturing as well as research. These new advances include: large sample (full wafer) capability, sharper probe tips capable of measuring sidewalls as steep as 15 degrees from the vertical, noncontact topography measurements, frictional-force measurements, and cross-section analysis. True three-dimensional nanometer-scale metrology can now be applied to process control and failure analysis. Some uses and applications to semiconductors are (1) surface roughness measurment of polished silicon wafers for gate oxide performance improvements, (2) surface roughness of deposited layers, (3) grain-size measurement, (4) depth measurement for etcher control, (5) step-height measurement, (6) gate-oxide integrity, (7) deposited layer integrity over lines, (8) monitoring the effectiveness of cleaning steps, (9) cross-section imaging, (10) high-resolution imaging for process inspection, (11) planarization quality, (12) phase-shift mask development, (13) chrome photomasks — defect imaging and sizing, line-edge quality, (14) defect imaging and sizing, and (15) spin-on glass cure and pore-size process studies