The influence of symmetric and asymmetric electrodes including SRO and IrO2 within the electrode structure on the imprint and fatigue behavior in sputtered and CSD derived PbZrxTi1 − xO2 (PZT) thin films is investigated. It is found that SRO buffer layers are needed within top and bottom electrode to improve the fatigue behavior. However, for improvement of the imprint behavior, only one SRO buffer layer within either top or bottom electrode is sufficient, whereas IrO2 reveals no improvement of the imprint behavior. Furthermore the direction dependence of the imprint behavior is examined. To examine the influence of the interface capacity on the fatigue mechanism in more detail, the capacity is measured for different PZT film thicknesses during fatigue treatment. It is shown that there is hardly any difference in interface capacity during fatigue.
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