The ability to model the effects of doping on the depleted MOS surface velocity is particularly important for scaled devices because of high doping levels and high device susceptibility to generation currents. However, it is difficult to find detailed measurements of the influence of ion implantation on surface generation in the doping range 3 × 10 16 to 5 × 10 17 cm −3, and the data that have been reported are not all in agreement. This doping range is of practical importance for charge coupled devices. By careful design of test structures and by accurate 2-D modeling, we have investigated the effects of selective implantation on surface and bulk generation parameters for some arsenic and boron implants in this range into 〈1000〉 p-type silicon. The principal results are that for arsenic implants below roughly 6 × 10 12 cm −2, typical of buried channel implants, no enhancement of surface state generation is observed to within 20% of the nominal surface generation, despite concerns of arsenic segregation at the interface. Also, for boron implants below 3 × 10 12 cm −2, typical of compensation implants in device active areas, no significant increase is observed, even when implantation is done through the gate oxide. However, for boron compensation implants in the range 1 × 10 13 cm −2, typical of isolation implants, generation from midgap states is increased by several fold and depends on implant and annealing conditions. Two distinct mechanisms for this increase are observed. The enhanced generation correlates accurately with the modeled concentration of boron at the Si/SiO 2 interface.