Graphene For Electronic Applications Research Articles

Graphene applications in electronics and photonics

Abstract

Tuning Electronic Structure of Graphene: A First-Principles Study

Based on first-principles study, tuning of electronic structure of graphene is reported. The emergence of band gap in this semimetal can be accomplished through different mechanisms. In this study, we have reported on the band gap modulations in graphene through chemical functionalization with oxygen, under the application of external stress, and through the creation of vacancies. Our study suggests that all these mechanisms alter either electronic properties or both structural and electronic properties of graphene. As a result, these mechanisms completely destroy the nature of massless Dirac fermions of graphene. Also, we report on the effect of static electric field on the band gap in hydrogenated graphene (graphane). The combined action of structural modifications that involves stretching and compression of C-C bonds in the hexagonal network and charge transfer mechanism are responsible for the gap opening in electronic spectrum of graphene, which is essential for the future application of graphene in electronics. The introduction of strain is a nondestructive method when compared to other methods for band gap engineering in graphene.

Repeated growth and bubbling transfer of graphene with millimetre-size single-crystal grains using platinum

Large single-crystal graphene is highly desired and important for the applications of graphene in electronics, as grain boundaries between graphene grains markedly degrade its quality and properties. Here we report the growth of millimetre-sized hexagonal single-crystal graphene and graphene films joined from such grains on Pt by ambient-pressure chemical vapour deposition. We report a bubbling method to transfer these single graphene grains and graphene films to arbitrary substrate, which is nondestructive not only to graphene, but also to the Pt substrates. The Pt substrates can be repeatedly used for graphene growth. The graphene shows high crystal quality with the reported lowest wrinkle height of 0.8 nm and a carrier mobility of greater than 7,100 cm2 V−1 s−1 under ambient conditions. The repeatable growth of graphene with large single-crystal grains on Pt and its nondestructive transfer may enable various applications.

Strong substrate effects of Joule heating in graphene electronics

The effect of Joule heating on graphene electronic properties is investigated by self-consistent use of full-band Monte Carlo electron dynamics and three-dimensional heat transfer simulations. Several technologically important substrate materials are examined: SiO2, SiC, hexagonal BN, and diamond. Results illustrate that the choice of substrate has a major impact via heat conduction and surface polar phonon scattering. Particularly, the poor thermal conductivity of SiO2 leads to significant Joule heating and saturation velocity degradation in graphene characterized by the 1/n decay. Considering the overall characteristics, BN appears to compare favorably against the other substrate choices for graphene electronic applications.

Controllable N-Doping of Graphene

Opening and tuning an energy gap in graphene are central to many electronic applications of graphene. Here we report N-doped graphene obtained by NH3 annealing after N(+)-ion irradiation of graphene samples. First, the evolution of the graphene microstructure was investigated following N(+)-ion irradiation at different fluences using Raman spectroscopy, showing that defects were introduced in plane after irradiation and then restored after annealing in N2 or in NH3. Auger electron spectroscopy (AES) of the graphene annealed in NH3 after irradiation showed N signal, however, no N signal was observed after annealing in N2. Last, the field-effect transistor (FET) was fabricated using N-doped graphene and monitored by the source-drain conductance and back-gate voltage (Gsd-Vg) curves in the measurement. The transport property changed compared to that of the FET made by intrinsic graphene, that is, the Dirac point position moved from positive Vg to negative Vg, indicating the transition of graphene from p-type to n-type after annealing in NH3. Our approach, which provides a physical mechanism for the introduction of defect and subsequent hetero dopant atoms into the graphene material in a controllable fashion, will be promising for producing graphene-based devices for multiple applications.

PHYSICS OF GRAPHENE: STATUS AND PERSPECTIVES

A short review of results, obtained within the examination of graphene — monoatomic carbon layer with two-dimension hexagonal lattice, characterized by the unique physical properties, is presented. Special impact is made on the perspectives of graphene applications in electronics, especially in sensors.

Fabrication and Characterization of Large-Area, Semiconducting Nanoperforated Graphene Materials

We demonstrate the fabrication of nanoperforated graphene materials with sub-20-nm features using cylinder-forming diblock copolymer templates across >1 mm(2) areas. Hexagonal arrays of holes are etched into graphene membranes, and the remaining constrictions between holes interconnect forming a honeycomb structure. Quantum confinement, disorder, and localization effects modulate the electronic structure, opening an effective energy gap of 100 meV in the nanopatterned material. The field-effect conductivity can be modulated by 40x (200x) at room temperature (T = 105 K) as a result. A room temperature hole mobility of 1 cm(2) V(-1) s(-1) was measured in the fabricated nanoperforated graphene field effect transistors. This scalable strategy for modulating the electronic structure of graphene is expected to facilitate applications of graphene in electronics, optoelectronics, and sensing.

Enhanced Optical Conductivity of Bilayer Graphene Nanoribbons in the Terahertz Regime

We reveal that there exists a class of graphene structures (a subclass of bilayer graphene nanoribbons) which has an exceptionally strong optical response in the terahertz (THz) and far infrared (FIR) regime. The peak conductance of THz/FIR active bilayer ribbons is around 2 orders of magnitude higher than the universal conductance of sigma(0) = e(2)/4variant Planck's over 2pi observed in graphene sheets. The criterion for the THz/FIR active subclass is a bilayer graphene nanoribbon with a one-dimensional massless Dirac fermion energy dispersion near the Gamma point. Our results overcome a significant obstacle that hinders the potential application of graphene in electronics and photonics.

An insulator's metallic side

Certain insulators have conducting surfaces that arise from subtle chemical properties of the bulk material. The latest experiments suggest that such surfaces may compete with graphene in electronic applications.