Antimony Trisulfide Research Articles

Thermoelectric power generator module using n-type Sb₂S₃ and p-type Bi₂Te₃-coated cotton fabric for wearable device applications

Antimony trisulfide (Sb₂S₃), a binary metal chalcogenide, exhibits significant promise for energy conversion applications due to its tunable bandgap and exceptional stability under exposure to moisture and air, making it a strong candidate for thermoelectric applications. In this study, Sb₂S₃ was synthesized via co-precipitation method and subsequently coated onto cotton fabric using a formulated ink. X-ray diffraction (XRD) and scanning electron microscopy (SEM) analyses confirmed its orthorhombic crystalline structure and nanorod-like morphology. Sb₂S₃ was found to possess an indirect bandgap of 1.70 eV in its amorphous phase and 1.52 eV in its crystalline phase. Fourier-transform infrared (FTIR) spectroscopy revealed characteristic peaks at 447 cm⁻1 and 568 cm⁻1, corresponding to the symmetric stretching vibrations of Sb-O and Sb-S bonds, respectively. Current-voltage (I-V) measurements indicated near-ohmic behavior with an electrical conductivity of 2 × 10⁻⁵ S/cm, while Hall effect measurements confirmed its n-type semiconducting nature. The thermoelectric evaluation of Sb₂S₃-coated cotton fabrics demonstrated n-type behavior, with the Seebeck coefficient increasing with temperature, reaching −185 μV/K at 293 K with a notable power factor of 6.845 × 10−4 nW/cmK2. The material also exhibited low thermal conductivity (0.077 W/mK) and an effusivity of 223.95 Ws1/2/m2K. For the first time, a thermoelectric device was successfully fabricated by combining Sb₂S₃ as the n-type material with Bi₂Te₃ as the p-type material. This device, integrated into a wearable hand band, demonstrated an output voltage of 4.7 mV under a temperature difference of approximately 4 °C, highlighting its significant potential for low-power applications in wearable technology. The successful integration of these materials into a flexible substrate underscores their viability in next-generation thermoelectric energy harvesting devices.

On the performance and thermal stability of solar cell based on CIGS-Sb2S3 combination with >35% power conversion efficiency

This study presents a solar cell design utilizing a CIGS (copper-indium-gallium-selenide) absorber and Sb2S3 (antimony trisulfide) back surface field (BSF) layers, targeting high photovoltaic (PV) performance with an emphasis on minimum possible effect of ambient temperature. We simulated a solar cell design consisting of zinc oxide, surface defect layer, zinc sulfide, CIGS layer, and an Sb2S3 layer using SCAPS-1D software. Our findings indicate that 200 nm Sb2S3 layer and a 1600 nm CIGS layer is the preferred combination for achieving high PV performance and appropriate J-V characteristics of the proposed solar cell. For this design, the achieved values of VOC (open circuit voltage), JSC (short circuit current density), PCE (power conversion efficiency), and fill factor (FF) are 1.069V, 42.08 mA/cm2, 35.94%, and 80.31%, respectively. The PV performance of the proposed solar cell is substantially better than the solar cell design without BSF layer as well as recently reported (2023-24) solar cell designs. This study further examines the impact of elevated ambient temperatures (295–360 K) on the PV performance. Our simulation results show that operating the proposed solar cell at moderately elevated temperatures is not a significant issue owing to small power temperature coefficient (-0.034% per K), which is comparable to that of commercially available solar cells. These findings are expected to contribute to the ongoing advancement of PV solar cells, aiming for higher PCE and improved stability, including thermal stability. Proposed solar cell with low PTC and high PCE can be suitable for space applications where temperature fluctuation is severe, as well as in tropical areas.

Unbiased Photoelectrochemical H2O2 Coupled to H2 Production via Dual Sb2S3‐Based Photoelectrodes with Ultralow Onset Potential

AbstractThe productions of hydrogen peroxide (H2O2) and hydrogen (H2) in a photoelectrochemical (PEC) water splitting cell suffer from an onset potential that limits solar conversion efficiencies. Moreover, the formation of H2O2 through two‐electron PEC water oxidation reaction competes with four‐electron oxidation evolution reaction. Herein, we developed the surface selenium doped antimony trisulfide photoelectrode with the integrated ruthenium cocatalyst (Ru/Sb2(S,Se)3) to achieve the low onset potential and high Faraday efficiency (FE) for selective H2O2 production. The photoanode exhibits an outstanding average FE of 85 % in the potential range of 0.4–1.6 VRHE and the H2O2 yield of 1.01 μmol cm−2 min−1 at 1.6 VRHE, especially at low potentials of 0.1–0.55 VRHE with 80.4 % FE. Impressively, an unassisted PEC system that employs light and electrolyte was constructed to simultaneously produce H2O2 and H2 production on both the Ru/Sb2(S,Se)3 photoanode and the Pt/TiO2/Sb2S3 photocathode. The integrated system enables the average PEC H2O2 production rate of 0.637 μmol cm−2 min−1 without applying any addition bias. To our knowledge, this is the first demonstration that Sb2S3‐based photoelectrodes exhibit H2O2/H2 two‐side production with a strict key factor of the system, which represents its powerful platform to achieve high efficiency and productivity and the feasibility to facilitate value‐added products in neutral conditions.

Unbiased Photoelectrochemical H2O2 Coupled to H2 Production via Dual Sb2S3-Based Photoelectrodes with Ultralow Onset Potential.

The productions of hydrogen peroxide (H2O2) and hydrogen (H2) in a photoelectrochemical (PEC) water splitting cell suffer from an onset potential that limits solar conversion efficiencies. Moreover, the formation of H2O2 through two-electron PEC water oxidation reaction competes with four-electron oxidation evolution reaction. Herein, we developed the surface selenium doped antimony trisulfide photoelectrode with the integrated ruthenium cocatalyst (Ru/Sb2(S,Se)3) to achieve the low onset potential and high Faraday efficiency (FE) for selective H2O2 production. The photoanode exhibits an outstanding average FE of 85 % in the potential range of 0.4-1.6 VRHE and the H2O2 yield of 1.01 μmol cm-2 min-1 at 1.6 VRHE, especially at low potentials of 0.1-0.55 VRHE with 80.4 % FE. Impressively, an unassisted PEC system that employs light and electrolyte was constructed to simultaneously produce H2O2 and H2 production on both the Ru/Sb2(S,Se)3 photoanode and the Pt/TiO2/Sb2S3 photocathode. The integrated system enables the average PEC H2O2 production rate of 0.637 μmol cm-2 min-1 without applying any addition bias. To our knowledge, this is the first demonstration that Sb2S3-based photoelectrodes exhibit H2O2/H2 two-side production with a strict key factor of the system, which represents its powerful platform to achieve high efficiency and productivity and the feasibility to facilitate value-added products in neutral conditions.

Amorphous and crystalline Sb2S3 nanoparticles embedded in N/S co-doped carbon as anodes for potassium-ion batteries

Antimony trisulfide (Sb2S3) has emerged as a promising anode candidate for potassium-ion batteries (PIBs) owing to its low cost and high theoretical specific capacity. However, its large volume expansion upon K+ storage and sluggish kinetics result in poor cycling performance and rate capability. To address these challenges, rational structural design is highly desirable. Herein, we report the synthesis of amorphous and crystalline Sb2S3 nanoparticles embedded in N/S co-doped carbon composites (a-Sb2S3@NSC and c-Sb2S3@NSC) via a facile organic coating combined with subsequent carbonization and sulfidation processes. When used as a PIBs anode material, a-Sb2S3@NSC exhibits a high discharge specific capacity of 415.6 mAh g−1 after 50 cycles at 200 mA g−1 and a stable rate capability (224.8 mAh g−1 at 2 A g−1), which remarkably outperforms that of the c-Sb2S3@NSC with inferior specific capacity (311.5 mAh g−1) and poor rate capability (67.7 mAh g−1). The amorphous structure of Sb2S3 nanoparticles in a-Sb2S3@NSC provides abundant defects and structural disorder, which reduces the entropy energy and activation barrier associated with K+ incorporation, effectively facilitating the transport and storage of K+. Moreover, the synergistic interactions between amorphous Sb2S3 nanoparticles and N/S co-doped carbon can effectively improve the electron/ion reaction kinetics and buffer volume variations, thus leading to superior potassium storage performances.

Boosting conversion efficiency by bandgap engineering of ecofriendly antimony trisulfide indoor photovoltaics via a modeling approach

With the exponential growth of the Internet of Things (IoT), indoor photovoltaics (IPVs) have emerged as a pivotal technology for powering low-power devices, drawing heightened interest due to their adaptability to indoor environments. The Photovoltaic Conversion Efficiency (PCE) of IPV cells is critically dependent on their ability to match the indoor spectrum with the device's response characteristics. In this realm, Antimony Trisulfide (Sb2S3), characterized by its wide bandgap and high absorption coefficient, emerges as a promising candidate for low-light applications. Our study focuses on the modeling and numerical analysis of Sb2S3 thin-film IPV cells by wxAMPS software, aiming to refine both the device structure and its photoelectric performance for effective indoor light harvesting. In a strategic shift from conventional CdS materials, we utilized SnO2—known for its high transmissivity, non-toxicity, and wide bandgap—as the electron transport layer (ETL) in Sb2S3 IPV cells. This substitution notably enhanced the short-wave response, elevating the spectral response from 45 % to 80 % at 400 nm. Additionally, we introduced a bandgap-tunable ZnOS buffer layer. This innovation proved instrumental in rectifying the band alignment mismatch between SnO2 and Sb2S3 layer, thereby optimizing interfacial electron transport properties. The integration of the ZnOS buffer layer effectively improved the fill factor from 40.0 % to 64.7 % of the Sb2S3 IPV cell by solving the band mismatch problem. The resulting optimized Sb2S3 IPV cell demonstrated exceptional response characteristics across the full visible spectrum (400–750 nm) and showed notable photoelectric performance under both fluorescent lamps (FLs) and light-emitting diodes (LEDs). Moreover, a detailed analysis was conducted on the performance differences of the device under indoor light sources compared to solar spectrum conditions, along with the underlying mechanisms. Finally, the Sb2S3 IPV cell achieved a peak theoretical efficiency of 46.25 % under cold white FL lighting, a testament to the optimal match between the device structure and this specific emission power spectrum. This modeling research not only underscores the feasibility of employing antimony-based photovoltaic technologies in indoor settings but also offers theoretical guidance for further advancements in this domain.

Tunable Near-Infrared Transparent Bands Based on Cascaded Fabry–Perot Cavities Containing Phase Change Materials

In this paper, we construct a near-infrared Fabry–Perot cavity composed of two sodium (Na) layers and an antimony trisulfide (Sb2S3) layer. By cascading two Fabry–Perot cavities, the transmittance peak splits into two transmittance peaks due to the coupling between two Fabry–Perot modes. We utilize a coupled oscillator model to describe the mode coupling and obtain a Rabi splitting of 60.0 meV. By cascading four Fabry–Perot cavities, the transmittance peak splits into four transmittance peaks, leading to a near-infrared transparent band. The near-infrared transparent band can be flexibly tuned by the crystalline fraction of the Sb2S3 layers. In addition, the effects of the layer thickness and incident angle on the near-infrared transparent band and the mode coupling are investigated. As the thickness of the Na layer increases, the coupling strength between the Fabry–Perot modes becomes weaker, leading to a narrower transparent band. As the thickness of the Sb2S3 layer increases, the round-trip propagating of the Sb2S3 layer increases, leading to the redshift of the transparent band. As the incident angle increases, the round-trip propagating of the Sb2S3 layer decreases, leading to the blueshift of the transparent band. This work not only provides a viable route to achieving tunable near-infrared transparent bands, but also possesses potential applications in high-performance display, filtering, and sensing.

Antimony Trisulfide with Graphene Oxide Coated Titania Nanotube Arrays as Anode Material for Lithium-ion Batteries

AbstractThe performance of the Lithium Ion Batteries (LiBs) is significantly influenced with the synergetic chemical properties of two different materials in a composite form. The specific capacity of both titanium dioxide arrays (TNAs) and Antimony trisulfide (Sb2S3) bottleneck the performance of LiB due to the low conductivity after the implantation as anode material. Herein, a novel multifunctional composite composed of highly dispersed Sb2S3 on freestanding tubular TNAs host via chemical bath deposition method (CBD) for use as anode material in lithium-ion batteries (LIBs). The loading quantity of Sb2S3 with reduced graphene oxide (rGO) was regulated to achieve adjustable outcomes. The composite anode consisting of TNAs/ Sb2S3/G in lithium-ion batteries (LIBs) has a specific capacity that is three times greater than conventional anodes. Furthermore, this composite anode maintains stable cyclic performance even after undergoing 300 cycles. The initial coulombic efficiency of the composite electrode is 100%, whereas the bare TNAs had a coulombic efficiency of 45%. The cycle performance analysis demonstrated that the TNAs/ Sb2S3/G composite has superior specific capacity and efficiency, even under high current density conditions of 500 µA/cm2. The rate performance is greatly improved, indicating the efficacy of this innovative composite anode material for high-performance LIBs.

Exploring the impact of antimony trisulfide (Sb2S3) doping on the optoelectronic functionality of hybrid CH3NH3PbI3 perovskite layers and solar cells

In this study, we present the effect of doping with antimony trisulfide (Sb2S3) nanobare on the electrical, optical, structural, and morpholigcal properties of CH3NH3 PbI3 perovskite thin films. Doped with Sb2S3 nanobare, the thin coatings demonstrated an exceptionally high degree of purity, featuring a tetragonal phase within its single-phase structure. This allowed for the creation of (110) textured CH3NH3PbI3 films, which comprised micrometer-sized grains arranged in a vertical direction across the entire film thickness and featured high crystallinity. Additionally, the CH3NH3PbI3 perovskites films exhibited significant optical absorption at appropriate energy levels and exhibited a high gachin rate of photons. Substance doping methods that can optimize the morphology of the perovskite active layer with large granules are exceedingly desirable in order to reduce charge carrier recombination. The synthesis of perovskite films with dimensions on the order of microns can be achieved by incorporating a regulated quantity of Sb2S3 nanobare into the precursor solution. The incorporation of these textured CH3NH3PbI3:Sb2S3 nanobare films significantly enhanced the power conversion efficiency (PCE) of the perovskite solar cells. The solar cell device configuration utilized in this investigation is as follows: glass/FTO/TiO2/CH3NH3PbI3:Sb2S3 nanobars/spiro-OMeTAD/Au. By employing Sb2S3 nanobars at a concentration of 9 mg/mL, we successfully attained an exceptional power conversion efficiency of 15.87 %. The resulting values for these parameters include an open-circuit voltage VOC of 1.09 V, a short-circuit current density JSC of 21.15 mA/cm2, and a fill factor FF of 68.87 %.

Tri-chalcogenides (Sb2S3/Bi2S3) solar cells with double electron transport layers: design and simulation

To make technology accessible to everyone, it is essential to focus on affordability and durability of the devices. Antimony trisulfide (Sb2S3) and bismuth (III) sulfide (Bi2S3) are low-cost and stable materials that are commonly used in photovoltaic devices due to their non-toxic nature and abundance. These materials are particularly promising for photovoltaic applications as they are effective light-absorbing materials. In this study, we utilized the Solar cell Capacitance Simulator- One-Dimensional (SCAPS-1D) software to investigate the parameters of a double electron transport layer (ETL) solar cell based on Sb2S3/ Bi2S3. The parameters examined included thickness of the absorber layer, overall defect density, density of acceptors, radiative recombination coefficient, series and shunt resistance, and work function of the back contact. The solar cell structure studied was FTO/SnO2/CdS/ Sb2S3 and Bi2S3/Spiro-OMeTAD/Au. By incorporating a SnO2 electron transport layer (ETL) into the double ETL structure of Sb2S3 and Bi2S3 solar cells, we observed a significant enhancement in the power conversion efficiency (PCE). Specifically, the PCE increased to 19.71% for the Sb2S3 solar cell and 24.05% for the Bi2S3 solar cell. In contrast, without SnO2, the single ETL-based CdS solar cell achieved a maximum PCE of 18.27 and 23.05% for Sb2S3 and Bi2S3, respectively.

The effect of solid lubricants in the brake friction composite on brake emissions: A case study with graphite, Sb2S3, and MoS2

Particulate matter produced during brake application was investigated, focusing on the effect of the solid lubricants in the brake friction composite, such as graphite, antimony trisulfide, and molybdenum disulfide. Results showed that the brake emission was significantly affected by the solid lubricant type and braking temperatures. Antimony trisulfide caused high brake emissions at moderate temperatures, whereas graphite produced high emissions at elevated temperatures. The brake emission at moderate temperatures was affected by the aggressiveness of the composites and the presence of friction films on the gray iron disc surface. In contrast, the brake emissions at elevated temperatures were determined by the thermal decomposition of the composite and the oxidation of solid lubricants.

Colloidal spherical stibnite particles via high-temperature metallo-organic synthesis.

Antimony trisulfide (Sb2S3) is an emerging semiconductor with a high absorption coefficient and a bandgap in the visible range. This makes it a promising material for various electronic and optoelectronic applications. However, one of the main challenges is still the synthesis of the material, as it is usually obtained either as a nanomaterial in its amorphous form with inferior optical properties or in crystalline rod-like structures in the micrometer or sub-micrometer range, which leads to application-related difficulties such as clogging in inkjet printing or spraying processes or highly porous layers in film applications. In this study, a one-pot synthesis of highly crystalline, spherical Sb2S3 sub-micron particles is presented. The particles are growing encapsulated in a removable, wax-like matrix that is formed together with an intermediate from the precursors SbCl3 and l-cysteine. Both substances are insoluble in the reaction mixture but well-dispersable in the solvent 1-octadecene (ODE). The intermediate forms a complex crosslinked architecture whose basic building block consists of an Sb atom attached to three cysteine molecules via Sb-S bonds. Embedded in the matrix consisting of excess cysteine, ODE, and chlorine, the intermediate decomposes into amorphous Sb2S3 particles that crystallize as the reaction proceeds at 240 °C. The final particles are highly crystalline, spherical, and in the sub-micron range (420 ± 100 nm), making them ideal for further processing. The encapsulation method could not only provide a way to extend the size range of colloidal particles, but in the case of Sb2S3, this method circumvents the risk of carbonization of ligands or insufficient crystallization during the annealing of amorphous material.

Pulsed laser deposition of Sb2S3 films for phase-change tunable nanophotonics

Non-volatile phase-change materials with large optical contrast are essential for future tunable nanophotonic applications. Antimony trisulfide (Sb2S3) has recently gained popularity in this field due to its low absorption in the visible spectral region. Although several Sb2S3 deposition techniques have been reported in the literature, none of them was optimized with respect to stoichiometry, lowest possible absorption, and large refractive index contrast (Δn) upon the phase change. Here we present a comprehensive multi-parameter optimization of pulsed laser deposition of Sb2S3 towards this end. We correlate the specific deposition with the resulting compositional and optical properties and report parameters leading to films with extraordinary qualities (Δn = 1.2 at 633 nm). Additionally, we suggest crystal orientations and vibrational modes associated with the largest change in the refractive index and propose them as useful large-scale indicators of the Sb2S3 switching contrast.

Encapsulation of crystalline and amorphous Sb2S3 within carbon and boron nitride nanotubes.

The recent rediscovery of 1D and quasi-1D (q-1D) van der Waals (vdW) crystals has laid foundation for the realization of emergent electronic, optical, and quantum-confined physical phenomena in both bulk and at the nanoscale. Of these, the highly anisotropic q-1D vdW crystal structure and the visible-light optical/optoelectronic properties of antimony trisulfide (Sb2S3) have led to its widespread consideration as a promising building block for photovoltaic and non-volatile phase change devices. However, while these applications will greatly benefit from well-defined and sub-nanometer-thick q-1D structures, little has been known about feasible synthetic routes that can access single covalent chains of Sb2S3. In this work, we explore how encapsulation in single or multi-walled carbon nanotubes (SWCNTs or MWCNTs) and visible-range transparent boron nitride nanotubes (BNNTs) influences the growth and phase of Sb2S3 nanostructures. We demonstrate that nanotubes with smaller diameters had a more pronounced effect in the crystallographic growth direction and orientation of Sb2S3 nanostructures, promoting the crystallization of the guest structures along the long-axis [010]-direction. As such, we were able to reliably access well-ordered few to single covalent chains of Sb2S3 when synthesized within defect-free SWCNTs with sub-2 nm inner diameters. Intriguingly, we found that the degree of crystalline order of Sb2S3 nanostructures was strongly influenced by the presence of defects and discontinuities along the Sb2S3-nanotube interface. We show that amorphous nanowire domains of Sb2S3 form around defect sites in larger, multi-walled nanotubes that manifest inner wall defects and discontinuities, suggesting a means to manipulate the crystallization dynamics of confined sub-10 nm-thick Sb2S3 nanostructures within nanotubes. Lastly, we show that ultranarrow amorphous Sb2S3 can impart functionality onto isolable BNNTs with photocurrent generation in the pA range which, alongside the dispersibility of the Sb2S3@BNNTs, could be leveraged to easily fabricate photoresistors only a few nm in width. Altogether, our results serve to solidify the understanding of how q-1D vdW pnictogen chalcogenides crystallize within confined synthetic platforms and are a step towards realizing functional materials from ensembles of encapsulated heterostructures.

Eliminating arsenic impurities from high-purity antimony trioxide through potassium sulfide co-precipitation

Arsenic, a significant impurity in high-purity antimony trioxide (Sb2O3), has historically been challenging to eliminate efficiently. This paper introduces a novel hydrometallurgical method capable of effectively reducing arsenic levels to below 0.1 ppm through sulfurization precipitation. This technique involves the co-precipitation of antimony ions (Sb3+), arsenic ions (As3+), and sulfide ions (S2-) to form antimony trisulfide (Sb2S3) and arsenic trisulfide (As2S3), consequently reducing the arsenic content in Sb2O3 to below 0.1 ppm. This method offers an effective solution for arsenic removal. The findings reveal that a high concentration of Sb3+, H+, and an excess of potassium sulfide (K2S) promote the formation of precipitates, thus enhancing the removal of arsenic. Temperatures below 30 °C are also conducive to the formation of As2S3. The addition of excess ammonia water alters the final product from Sb4O5Cl2 to Sb2O3, influencing the product's phase. This study presents an innovative and efficient hydrometallurgical technique for removing arsenic from high-purity Sb2O3, addressing a significant gap in this field. It offers practical guidelines for reagent dosing and shows substantial promise for industrial application.

Sb2S3-based optical switch exploiting the Brewster angle phenomenon [Invited

Optical switches based on phase change materials (PCMs) hold great promise for various photonic applications such as telecommunications, data communication, optical interconnects, and signal processing. Their non-volatile nature as well as rapid switching speeds make them highly desirable for developing advanced and energy-efficient optical communication technologies. Ongoing research efforts in exploring new PCMs, optimizing device designs, and overcoming existing challenges are driving the development of innovative and high-performance optical switches for the next generation of photonics applications. In this study, we design and experimentally demonstrate a novel optical amplitude switch design incorporating PCM antimony trisulfide (Sb2S3) based on the Brewster angle phenomenon.

Parallel Planar Heterojunction Strategy Enables Sb2S3 Solar Cells with Efficiency Exceeding 8 %

AbstractSolution‐processed solar cells based on inorganic heterojunctions provide a potential approach to the efficient, stable and low‐cost solar cells required for the terrestrial generation of photovoltaic energy. Antimony trisulfide (Sb2S3) is a promising photovoltaic absorber. Here, an easily solution‐processed parallel planar heterojunction (PPHJ) strategy and related principle are developed to prepare efficient multiple planar heterojunction (PHJ) solar cells, and the PPHJ strategy boosts the efficiency of solution‐processed Sb2S3 solar cells up to 8.32 % that is the highest amongst Sb2S3 devices. The Sb2S3‐based PPHJ device consists of two kinds of conventional planar heterojunction (PHJ) subcells in a parallel connection: Sb2S3‐based PHJ subcells dominating the absorption and charge generation and CH3NH3PbI3‐based PHJ subcells governing the electron transport towards collection electrode, but it belongs to an Sb2S3 device in nature. The resulting PPHJ device combines together the distinctive structural features of Sb2S3 absorbing layer as a main absorber and the duplexity of well‐crystallized/oriented CH3NH3PbI3 layer in charge transportation as an additional absorber, while the presence of perovskite does not affect device stability. The PPHJ strategy maintains the facile preparation by the conventional sequential depositions of multiple layers, but eliminates the normal complexity in both tandem and parallel tandem PHJ systems.

Parallel Planar Heterojunction Strategy Enables Sb2 S3 Solar Cells with Efficiency Exceeding 8 .

Solution-processed solar cells based on inorganic heterojunctions provide a potential approach to the efficient, stable and low-cost solar cells required for the terrestrial generation of photovoltaic energy. Antimony trisulfide (Sb2 S3 ) is a promising photovoltaic absorber. Here, an easily solution-processed parallel planar heterojunction (PPHJ) strategy and related principle are developed to prepare efficient multiple planar heterojunction (PHJ) solar cells, and the PPHJ strategy boosts the efficiency of solution-processed Sb2 S3 solar cells up to 8.32 % that is the highest amongst Sb2 S3 devices. The Sb2 S3 -based PPHJ device consists of two kinds of conventional planar heterojunction (PHJ) subcells in a parallel connection: Sb2 S3 -based PHJ subcells dominating the absorption and charge generation and CH3 NH3 PbI3 -based PHJ subcells governing the electron transport towards collection electrode, but it belongs to an Sb2 S3 device in nature. The resulting PPHJ device combines together the distinctive structural features of Sb2 S3 absorbing layer as a main absorber and the duplexity of well-crystallized/oriented CH3 NH3 PbI3 layer in charge transportation as an additional absorber, while the presence of perovskite does not affect device stability. The PPHJ strategy maintains the facile preparation by the conventional sequential depositions of multiple layers, but eliminates the normal complexity in both tandem and parallel tandem PHJ systems.

Characterization of a Moderately Halotolerant Antimony-Removing Desulfovibrio sp. Strain Isolated from Landfill Leachate

Antimony (Sb) is a harmful contaminant posing a risk to the environment and human health. Antimony-containing industrial wastewater often contains sulfate; therefore, it is suitable to apply sulfate-reducing bacteria (SRB) to remove Sb from such water. SRB anaerobically reduce sulfate to sulfide. Sb(V) is then reduced to Sb(III) by sulfide to produce an antimony trisulfide (Sb2S3) precipitate. This wastewater often exhibits a high salinity, which inhibits biological reactions. This study aimed to isolate and characterize a halotolerant bacterium capable of removing Sb from wastewater. A Desulfovibrio sp. strain was isolated from a mixed bacterial culture derived from a leachate sample from the Nam Son landfill in Vietnam. The isolated strain, NSLLH1b, removed 86% of the 50 mg/L of Sb(V) in 3 days at 180 mg/L of sulfate and 360 mg-C/L of lactate, at a pH of 7.0 and at 28 °C. It anaerobically removed >80% of the Sb(V) at 12.5–100 mg/L in 14 days at initial concentrations of >100 mg/L of sulfate, >250 mg-CL of lactate, and 0.2–15 g/L of NaCl, and a pH of 5–8, resulting in orange precipitation. An analysis using scanning electron microscopy–energy-dispersive X-ray spectroscopy confirmed that the precipitation consisted mainly of Sb and sulfur, supposedly as Sb2S3. This moderately halotolerant bacterium can be used for simultaneously removing Sb and sulfate from wastewater.

All‐Optical Switching of Structural Color with a Fabry–Pérot Cavity

Fine tuning the optical responses of thin‐film devices is highly attractive for emerging applications, such as optical memories, solar cells, nanophotonics, and photodetectors. Even though thin‐film technology is well established, dynamically switching the optical responses of thin films after fabrication remains challenging because of passive materials and device structures. This work demonstrates an approach for all‐optical switching of structural colors excited by a Fabry–Pérot (FP) cavity inside a metal–dielectric–metal (MDM) thin‐film stack. A low‐loss phase‐change material (PCM), that is, antimony trisulfide (Sb2S3), which is embedded in the stack, enables efficient FP cavity resonance in the visible spectrum. 1) Color reflectivity of >60%; 2) multistructural colors using a single MDM cavity; 3) a wide dynamic range of colors of up to ≈220 nm; and 4) a gamut coverage of more than 80% of standard RGB (sRGB) are achieved. The all‐optical switching is realized via the crystallization and reamorphization of Sb2S3 using continuous‐wave and pulsed lasers, respectively. The findings provide a framework for the cost‐effective realization of dynamically responsive thin‐film‐based nanophotonic devices.