Antiferromagnetic Spintronics Research Articles

Novel B6P6X (X=As, Sb) monolayers for antiferromagnetic spintronics and hydrogen storage

Embedding foreign atoms into porous two-dimensional (2D) materials has emerged as a promising strategy to tailor their electronic, magnetic, and adsorption properties, enabling promising applications in energy storage and spintronics devices. In this work, spin-polarized density functional theory (DFT) calculations were employed to investigate the ground state properties and hydrogen (H2) storage of interstitially X = As and Sb atom doped B6P6 (B6P6X) graphenylene monolayers. The resulting B6P6X (X = As, Sb) monolayers exhibit very good mechanical, dynamical, and thermal stabilities with antiferromagnetic (AFM) ground states. Electronic structure calculations reveal AFM semiconducting behavior for both monolayers, with indirect/direct band gaps of 0.71/0.60 eV (PBE) and 2.19/2.14 eV (HSE06) for B6P6As/B6P6Sb, respectively. All B6P6X monolayers exhibit an in-plane easy magnetization axis. The obtained Berezinskii-Kosterlitz–Thouless transition (BKT) temperature value of B6P6Sb monolayer is 268.74 K. Furthermore, the H2 storage capabilities of these B6P6X monolayers were examined. We find that B6P6As and B6P6Sb monolayers can each adsorb up to 48H2 molecules with an average adsorption energy (Ea) of -0.14 eV/H2. The corresponding H2 storage gravimetric capacities are 6.91 wt% for B6P6As@48H2 and 6.10 wt% for B6P6As@48H2, surpassing the U.S. Department of Energy’s 2025 target of 5.50 wt%. These findings highlighting the potential of B6P6X (X = As, Sb) monolayers for AFM spintronics and H2 storage applications.

The structure, magnetic properties, magnetotransport and temperature coefficient of resistivity of hexagonal 4H-SrMnO3 manganite

The perovskite hexagonal SrMnO3 manganite with four layers (4H-SrMnO3) have been one of the hot topics in materials science due to the physical characteristics of antiferromagnetic, ferroelectric, and thermoelectric effects. The transport properties and magnetoresistance (MR) effect of 4H-SrMnO3 have seldom been reported. The structure, temperature coefficient of resistivity (TCR), magnetic and magnetotransport properties of the 4H-SrMnO3 SrMnO3 manganite obtained by solid state reaction have been investigated in this work. X-ray diffraction (XRD), scanning electron microscopy (SEM) and energy dispersive spectroscopy (EDS) measurements at room temperature reveal that the SrMnO3 sample exhibits a pure hexagonal symmetric structure, with uniform distribution of particles and elements. Under applied magnetic fields of 2000 Oe, the SrMnO3 sample exhibits a transition from antiferromagnetic (AFM) to paramagnetic (PM) behavior at approximately 280 K, known as the Néel temperature (TN). The resistance is influenced by the magnetic field, but overall exhibits an insulating state. Remarkably, the SrMnO3 sample shows significant MR effect near room temperature. The negative MR near room temperature varies from 5.8 % with 1 T field to 16.8 % with 6 T field, indicating an existence of obvious MR in the hexagonal AFM SrMnO3 manganite. Furthermore, the maxmium value of TCR reaches 4.34 % K−1 near room temperature. These findings of room-temperature TCR and room-temperature MR in the AFM 4H-SrMnO3 hold immense value for the research and potential application of the AFM spintronics and devices.

Spin Hall-induced bilinear magnetoelectric resistance.

Magnetoresistance is a fundamental transport phenomenon that is essential for reading the magnetic states for various information storage, innovative computing and sensor devices. Recent studies have expanded the scope of magnetoresistances to the nonlinear regime, such as a bilinear magnetoelectric resistance (BMER), which is proportional to both electric field and magnetic field. Here we demonstrate that the BMER is a general phenomenon that arises even in three-dimensional systems without explicit momentum-space spin textures. Our theory suggests that the spin Hall effect enables the BMER provided that the magnitudes of spin accumulation at the top and bottom interfaces are not identical. The sign of the BMER follows the sign of the spin Hall effect of heavy metals, thereby evidencing that the BMER originates from the bulk spin Hall effect. Our observation suggests that the BMER serves as a general nonlinear transport characteristic in three-dimensional systems, especially playing a crucial role in antiferromagnetic spintronics.

Ultrahigh Néel Temperature Antiferromagnetism and Ultrafast Laser-Controlled Demagnetization in a Dirac Nodal Line MoB3 Monolayer.

Two-dimensional (2D) antiferromagnetic (AFM) materials boasting a high Néel temperature (TN), high carrier mobility, and fast spin response under an external field are in great demand for efficient spintronics. Herein, we theoretically present the MoB3 monolayer as an ideal 2D platform for AFM spintronics. The AFM MoB3 monolayer features a symmetry-protected, 4-fold degenerate Dirac nodal line (DNL) at the Fermi level. It demonstrates a high magnetic anisotropy energy of 865 μeV/Mo and an ultrahigh TN of 1050 K, one of the highest recorded for 2D AFMs. Importantly, we reveal the ultrafast demagnetization of AFM MoB3 under laser irradiation, which induces a rapid transition from a DNL semimetallic state to a metallic state on the time scale of hundreds of femtoseconds. This work presents an effective method for designing advanced spintronics using 2D high-temperature DNL semimetals and opens up a new idea for ultrafast modulation of magnetization in topological semimetals.

Electronic transport in reactively sputtered Mn3GaN films prepared under optimized nitrogen flow

Abstract Mn-based nitrides with antiperovskite structures have several properties that can be utilized for antiferromagnetic spintronics. Their magnetic properties depend on the structural quality, composition and doping of the cubic antiperovskite structure. Such nitride thin films are usually produced by reactive physical vapor deposition, where the deposition rate of N can only be controlled by the N2 gas flow. We show that the tuning of the N content can be optimized using low temperature resistivity measurements, which serve as an indicator of the degree of structural disorder. Several Mn3GaN x films were prepared by reactive magnetron sputtering under different N2 gas flows. Under optimized gas flow conditions, we obtain films that exhibit a metal-like temperature dependence of the resistivity, a vanishing logarithmic increase of the resistivity towards zero, the highest resistivity ratio, and a lattice contraction of 0.4% along the growth direction when heated above the Néel temperature T N . The retarded formation of an additional magnetic phase appearing at a temperature T ∗ ≪ T N gives rise to a large thermal hysteresis of the resistivity and anomalous Hall effect.

Spin polarization in a collinear antiferromagnetic molecular wire predicted by first-principles calculations

A collinear antiferromagnetic molecular wire with zero total magnetic moments based on 1,3-diphenylpropynylidene radicals was sandwiched between two nonmagnetic Al leads. The transport characteristics with spin-polarization for this molecular junction were performed using an first-principles method based on density functional theory combined with non-equilibrium Green's functions. Reversible and high spin polarization was obtained in this collinear antiferromagnetic molecular wire, which was originated from that the bias voltage broke the symmetry of spin sublattices. Especially, the sign of spin polarization could be adjusted by changing the bias. Our calculations greatly contribute for developing novel antiferromagnetic spintronics devices with single molecular scale.

A thorough investigation of the antiferromagnetic resonance

Antiferromagnetic (AF) compounds possess distinct characteristics that render them promising candidates for advancing the application of spin degree of freedom in computational devices. For instance, AF materials exhibit minimal susceptibility to external magnetic fields while operating at frequencies significantly higher than their ferromagnetic counterparts. However, despite their potential, there remains a dearth of understanding, particularly concerning certain aspects of AF spintronics. In particular, the properties of coherent states in AF materials have received insufficient investigation, with many features extrapolated directly from the ferromagnetic scenario. Addressing this gap, this study offers a comprehensive examination of AF coherent states, shedding new light on both AF and Spin-Flop phases. Employing the Holstein-Primakoff formalism, we conduct an in-depth analysis of resonating-driven coherent phases. Subsequently, we apply this formalism to characterize antiferromagnetic resonance, a pivotal phenomenon in spin-pumping experiments, and extract crucial insights therefrom.

Finite Size Effects in Antiferromagnetic Highly Strained BiFeO3 Multiferroic Films

AbstractEpitaxially strain‐engineered tetragonal (T)‐like BiFeO3 (BFO) is a multiferroic material with unique crystallographic and physical properties compared to its bulk rhombohedral parent. While the effect of this structural change on ferroelectric properties is understood, the influence on correlated antiferromagnetic (AFM) properties, especially with reduced film thickness, is less clear. Here, the AFM behavior of T‐like BFO films 9–58 nm thick on LaAlO3 (001) substrates fabricated by pulsed laser deposition was studied using conversion electron Mössbauer spectroscopy and X‐ray diffraction. The key findings include: i) Ultrathin T‐like BFO films (<10 nm) show a decoupling of magnetic and structural transitions, with the polar vector tilted 32 degrees from [001] in 9–13 nm films. ii) Films thinner than 13 nm exhibit no structural transition down to 150 K, with a Néel (TN) transition at ≈290 K, ≈35 K lower than thicker films. Interestingly, the TN scaling with thickness suggests realistic scaling exponents considering a critical correlation length for C‐type AFM order, rather than G‐type. The results show that finite size effects can tailor transition temperatures and modulate AFM wave modes in antiferromagnetic oxides, with implications for AFM spintronics for future information technologies.

Prospects for Antiferromagnetic Spintronic Devices

This article examines recent advances in the field of antiferromagnetic spintronics from the perspective of potential device realization and applications. We discuss advances in the electrical control of antiferromagnetic order by current-induced spin–orbit torques, particularly in antiferromagnetic thin films interfaced with heavy metals. We also review possible scenarios for using voltage-controlled magnetic anisotropy as a more efficient mechanism to control antiferromagnetic order in thin films with perpendicular magnetic anisotropy. Next, we discuss the problem of electrical detection (i.e., readout) of antiferromagnetic order and highlight recent experimental advances in realizing anomalous Hall and tunneling magnetoresistance effects in thin films and tunnel junctions, respectively, which are based on noncollinear antiferromagnets. Understanding the domain structure and dynamics of antiferromagnetic materials is essential for engineering their properties for applications. For this reason, we then provide an overview of imaging techniques as well as micromagnetic simulation approaches for antiferromagnets. Finally, we present a perspective on potential applications of antiferromagnets for magnetic memory devices, terahertz sources, and detectors.

Cubic Mn3Ge thin films stabilized through epitaxial growth as a candidate noncollinear antiferromagnet

Metallic antiferromagnets with chiral spin textures induce Berry curvature-driven anomalous and spin Hall effects that arise from the topological structure of their electronic bands. Here, we use epitaxial engineering to stabilize (111)-oriented thin films of Mn3Ge with a cubic phase. This cubic phase is distinct from tetragonal ferrimagnetic and hexagonal noncollinear antiferromagnetic structures with the same chemical composition. First-principles calculations indicate that cubic Mn3Ge will preferentially form an all-in/all-out triangular spin texture. We present evidence for this noncollinear antiferromagnetism through magnetization measurements with a Néel temperature of 490 K. First-principles calculations of the corresponding band structure indicate the presence of Weyl points. These highlight cubic Mn3Ge as a candidate material for topological antiferromagnetic spintronics.

Magnon-phonon Fermi resonance in antiferromagnetic CoF2

Understanding spin-lattice interactions in antiferromagnets is a critical element of the fields of antiferromagnetic spintronics and magnonics. Recently, coherent nonlinear phonon dynamics mediated by a magnon state were discovered in an antiferromagnet. Here, we suggest that a strongly coupled two-magnon-one phonon state in this prototypical system opens a novel pathway to coherently control magnon-phonon dynamics. Utilizing intense narrow-band terahertz (THz) pulses and tunable magnetic fields up to μ0Hext = 7 T, we experimentally realize the conditions of magnon-phonon Fermi resonance in antiferromagnetic CoF2. These conditions imply that both the spin and the lattice anharmonicities harvest energy from the transfer between the subsystems if the magnon eigenfrequency fm is half the frequency of the phonon 2fm = fph. Performing THz pump-infrared probe spectroscopy in conjunction with simulations, we explore the coupled magnon-phonon dynamics in the vicinity of the Fermi-resonance and reveal the corresponding fingerprints of nonlinear interaction facilitating energy exchange between these subsystems.

Acoustomagnonic Spin Hall Effect in Honeycomb Antiferromagnets.

The recently discovered Van der Waals antiferromagnets have suffered from the lack of a comprehensive method to study their magnetic properties. Here, we propose an ac intrinsic magnon spin Hall current driven by surface acoustic waves as a novel probe for such antiferromagnets. Our results pave the way towards mechanical detection and manipulation of the magnetic order in two-dimensional antiferromagnets. Furthermore, they will overcome the difficulties with weak magnetic responses inherent in the use of antiferromagnets and hence provide a building block for future antiferromagnetic spintronics.

Surface-Symmetry-Driven Dzyaloshinskii-Moriya Interaction and Canted Ferrimagnetism in Collinear Magnetoelectric Antiferromagnet Cr_{2}O_{3}.

Antiferromagnets are normally thought of as materials with compensated magnetic sublattices. This adds to their technological advantages but complicates readout of the antiferromagnetic state. We demonstrate theoretically the existence of a Dzyaloshinskii-Moriya interaction (DMI), which is determined by the magnetic symmetry classes of Cr_{2}O_{3} surfaces with an in-plane magnetic easy axis. The DMI explains a previously predicted out-of-plane magnetization at the nominally compensated surfaces of chromia, leading to a surface-localized canted ferrimagnetism. This is in agreement with magnetotransport measurements and with density functional theory predictions that further allow us to quantify the strength of DMI. The temperature dependence of the transversal resistance for these planes shows distinct behavior in comparison with that of the Cr_{2}O_{3} c plane, which we attribute to the influence of DMI. Our Letter provides a framework to analyze surface-driven phenomena in antiferromagnets, and motivates the use of nominally compensated chromia surfaces for antiferromagnetic spintronics and magnonics.

Tunable High‐Temperature Tunneling Magnetoresistance in All‐van der Waals Antiferromagnet/Semiconductor/Ferromagnet Junctions

AbstractMagnetic tunnel junctions (MTJs) are widely applied in spintronic devices for efficient spin detection through the imbalance of spin polarization at the Fermi level. The van der Waals (vdW) property of 2D magnets with atomically flat surfaces and negligible surface roughness greatly facilitates the development of MTJs, primarily in ferromagnets. Here, A‐type antiferromagnetism in 2D vdW single‐crystal (Fe0.8Co0.2)3GaTe2 is reported with TN ≈ 203 K in bulk and ≈ 185 K in 9‐nm nanosheets. The metallic nature and out‐of‐plane magnetic anisotropy make it a suitable candidate for MTJ electrodes. By constructing heterostructures based on (Fe0.8Co0.2)3GaTe2/WSe2/Fe3GaTe2, a large tunneling magnetoresistance (TMR) ratio of 180% at low temperature is obtained, with the TMR signal persisting at near‐room temperature 280 K. Furthermore, the TMR is tunable by the electric field, and the MTJ device operates stably with a low applied bias down to 1 mV (≈0.6 nA), highlighting its potential for energy‐efficient spintronic devices. This work opens up new opportunities for 2D antiferromagnetic spintronics and quantum devices.

Universal scaling law for chiral antiferromagnetism

The chiral antiferromagnetic (AFM) materials, which have been widely investigated due to their rich physics, such as non-zero Berry phase and topology, provide a platform for the development of antiferromagnetic spintronics. Here, we find two distinctive anomalous Hall effect (AHE) contributions in the chiral AFM Mn3Pt, originating from a time-reversal symmetry breaking induced intrinsic mechanism and a skew scattering induced topological AHE due to an out-of-plane spin canting with respect to the Kagome plane. We propose a universal AHE scaling law to explain the AHE resistivity (ρAH\\documentclass[12pt]{minimal} \\usepackage{amsmath} \\usepackage{wasysym} \\usepackage{amsfonts} \\usepackage{amssymb} \\usepackage{amsbsy} \\usepackage{mathrsfs} \\usepackage{upgreek} \\setlength{\\oddsidemargin}{-69pt} \\begin{document}$${{\\rho }}_{AH}$$\\end{document}) in this chiral magnet, with both a scalar spin chirality (SSC)-induced skew scattering topological AHE term, ask\\documentclass[12pt]{minimal} \\usepackage{amsmath} \\usepackage{wasysym} \\usepackage{amsfonts} \\usepackage{amssymb} \\usepackage{amsbsy} \\usepackage{mathrsfs} \\usepackage{upgreek} \\setlength{\\oddsidemargin}{-69pt} \\begin{document}$${a}_{sk}$$\\end{document} and non-collinear spin-texture induced intrinsic anomalous Hall term, bin\\documentclass[12pt]{minimal} \\usepackage{amsmath} \\usepackage{wasysym} \\usepackage{amsfonts} \\usepackage{amssymb} \\usepackage{amsbsy} \\usepackage{mathrsfs} \\usepackage{upgreek} \\setlength{\\oddsidemargin}{-69pt} \\begin{document}$${{b}}_{{in}}$$\\end{document}. We found that ask\\documentclass[12pt]{minimal} \\usepackage{amsmath} \\usepackage{wasysym} \\usepackage{amsfonts} \\usepackage{amssymb} \\usepackage{amsbsy} \\usepackage{mathrsfs} \\usepackage{upgreek} \\setlength{\\oddsidemargin}{-69pt} \\begin{document}$${{{a}}}_{{{sk}}}$$\\end{document} and bin\\documentclass[12pt]{minimal} \\usepackage{amsmath} \\usepackage{wasysym} \\usepackage{amsfonts} \\usepackage{amssymb} \\usepackage{amsbsy} \\usepackage{mathrsfs} \\usepackage{upgreek} \\setlength{\\oddsidemargin}{-69pt} \\begin{document}$${{{b}}}_{{{in}}}$$\\end{document} can be effectively modulated by the interfacial electron scattering, exhibiting a linear relation with the inverse film thickness. Moreover, the scaling law can explain the anomalous Hall effect in various chiral magnets and has far-reaching implications for chiral-based spintronics devices.

Magnetism in the axion insulator candidate Eu5In2Sb6

Eu5In2Sb6 is a member of a family of orthorhombic nonsymmorphic rare-earth intermetallics that combines large localized magnetic moments and itinerant exchange with a low carrier density and perpendicular glide planes. This may result in special topological crystalline (wallpaper fermion) or axion insulating phases. Recent studies of Eu5In2Sb6 single crystals have revealed colossal negative magnetoresistance and multiple magnetic phase transitions. Here, we clarify this ordering process using neutron scattering, resonant elastic x-ray scattering, muon spin-rotation, and magnetometry. The nonsymmorphic and multisite character of Eu5In2Sb6 results in coplanar noncollinear magnetic structures with an Ising-like net magnetization along the a axis. A reordering transition, attributable to competing ferro- and antiferromagnetic couplings, manifests as the onset of a second commensurate Fourier component. In the absence of spatially resolved probes, the experimental evidence for this low-temperature state can be interpreted either as an unusual double-q structure or in a phase separation scenario. The net magnetization produces variable anisotropic hysteretic effects which also couple to charge transport. The implied potential for functional domain physics and topological transport suggests that this structural family may be a promising platform to implement concepts of topological antiferromagnetic spintronics. Published by the American Physical Society 2024

Magnetoresistance and magnetic field-induced phase transition in two-dimensional antiferromagnet Fe1/3NbS2

We perform systematic studies on the magnetic and magnetotransport properties of Fe1/3NbS2 single crystal. Results show that Fe1/3NbS2 is an antiferromagnet with strong perpendicular magnetocrystalline anisotropy even in the paramagnetic state. The Fe1/3NbS2 nanoplate exhibits exotic magnetotransport characteristics with variation of temperature and magnetic field in the vicinity of Néel temperature. The temperature dependence of resistivity indicates that the magnetic field has a substantial effect on the Néel order of Fe1/3NbS2, and an intermediate phase occurs before the sample enters into the antiferromagnetic state. It is the field- or temperature-induced antiferromagnetic–intermediate phase and intermediate phase–paramagnetic phase transitions that lead to the novel magnetotransport characteristics in the vicinity of Néel temperature. The findings in this work will promote future studies based on two-dimensional antiferromagnetic spintronics.

Picosecond Spin Current Generation from Vicinal Metal-Antiferromagnetic Insulator Interfaces.

We report the picosecond spin current generation from the interface between a heavy metal and a vicinal antiferromagnet insulator Cr_{2}O_{3} by laser pulses at room temperature and zero magnetic field. It is converted into a detectable terahertz emission in the heavy metal via the inverse spin Hall effect. The vicinal interfaces are apparently the source of the picosecond spin current, as evidenced by the proportional terahertz signals to the vicinal angle. We attribute the origin of the spin current to the transient magnetic moment generated by an interfacial nonlinear magnetic-dipole difference-frequency generation. We propose a model based on the in-plane inversion symmetry breaking to quantitatively explain the terahertz intensity with respect to the angles of the laser polarization and the film azimuth. Our work opens new opportunities in antiferromagnetic and ultrafast spintronics by considering symmetry breaking.

Influence of the Substrate on the Exchange Coupling of NiO/FeCo Bilayers

Antiferromagnetic/ferromagnetic (AF/F) systems have been extensively investigated due to the importance that interfacial exchange coupling effects have in the development of magnetic storage technologies. Recently, these systems have garnered interest for the potential they have to imprint the magnetic moments of the AF into an F layer, offering the possibility of using it as a read-out mechanism in antiferromagnetic spintronics. In this study, we explored the importance of crystalline orientation and strains induced by the substrate in the exchange coupling properties of NiO/FeCo AF/F bilayers. For that, we have grown NiO/FeCo bilayers on MgO (001) and Al2O3 (0001) substrates varying the FeCo layer thickness. In addition, we have analyzed both deposited samples and those with induced interfacial unidirectional anisotropy. For inducing such interfacial anisotropy, we used a field cooling procedure, heating the bilayers to 650 K and subsequently cooling down to room temperature under the presence of an external magnetic field of 300 mT. We have investigated the effect of the substrate in terms of crystalline orientation and lattice mismatching on the AF/F exchange coupling as well as the dependence of the coercivity and exchange bias on the inverse F layer thickness that is consistent with the interfacial origin of the AF/F exchange coupling. Moreover, the angular dependence of the magnetic properties was explored by using vectorial Kerr magnetometry, confirming the presence of both magnetocrystalline anisotropy, arising from the epitaxial character of the growing process mainly when the bilayer is grown on MgO (001) substrates, and the field cooling (FC)-induced unidirectional anisotropy.

Extreme terahertz magnon multiplication induced by resonant magnetic pulse pairs

Nonlinear interactions of spin-waves and their quanta, magnons, have emerged as prominent candidates for interference-based technology, ranging from quantum transduction to antiferromagnetic spintronics. Yet magnon multiplication in the terahertz (THz) spectral region represents a major challenge. Intense, resonant magnetic fields from THz pulse-pairs with controllable phases and amplitudes enable high order THz magnon multiplication, distinct from non-resonant nonlinearities such as the high harmonic generation by below-band gap electric fields. Here, we demonstrate exceptionally high-order THz nonlinear magnonics. It manifests as 7th-order spin-wave-mixing and 6th harmonic magnon generation in an antiferromagnetic orthoferrite. We use THz two-dimensional coherent spectroscopy to achieve high-sensitivity detection of nonlinear magnon interactions up to six-magnon quanta in strongly-driven many-magnon correlated states. The high-order magnon multiplication, supported by classical and quantum spin simulations, elucidates the significance of four-fold magnetic anisotropy and Dzyaloshinskii-Moriya symmetry breaking. Moreover, our results shed light on the potential quantum fluctuation properties inherent in nonlinear magnons.