Samples of 6HSiC were implanted with Ga + and Sb + ions in a wide dose range (10 13 to 10 16 cm −2) at various target temperatures (− 190°C to 1200°C). Short-time annealing was performed at temperatures from 600°C to 1750°C. The as-implanted and annealed samples were analyzed by means of the RBS-channeling technique, XTEM and optical measurements. The results show that amorphization can be prevented for implantation temperatures ≥ 300°C; from 500°C to 800°C minimum damage concentrations are obtained. Annealing of amorphous layers is quite difficult and non-perfect, no monocrystalline state was found up to temperatures of 1720°C. Weakly damaged layers produced by a low dose (< 1 × 10 14 cm −2) at room temperature regrow perfectly at 1200°C. Residual damage after high-dose implantation (≥ 1 × 10 15 cm −2) at elevated temperatures cannot be removed completely by annealing.