Amorphous Silicon Research Articles

Optimizing thin-film silicon solar cells with nanostructured TiO2 and a silver back reflector for enhanced energy conversion efficiency

This paper investigates the improvement of energy conversion efficiency in thin-film silicon solar cells by employing periodic nanostructures of TiO2 on the silicon active layer and a back reflector featuring periodic nanostructures of silver. The objective is to increase the optical path length, enhance absorption probability for longer wavelengths, and subsequently improve solar cell performance. Three silicon-based solar cell configurations are proposed and simulated using the finite difference time domain (FDTD) method to assess their performance. Electrical characteristics are obtained through the drift-diffusion method. The resulting short-circuit current density increased from 40.93 to 65.28 to 95.373mA/cm2 for the three cells, leading to significant improvements in conversion efficiency with observed values of 20.39%, 33.26%, and 47.28%, respectively, in the optimized structures. Furthermore, we compare the simulation results of the three structures with those of a reference structure and several structures previously proposed in the literature.

Organic Electronics in Flexible Devices: Engineering Strategy, Synthesis, And Application

As global temperatures rise and fossil fuel reserves dwindle, the urgency to transition to renewable energy sources becomes paramount. Concentrated solar technology (CSP) together with technological advances in solar panels, especially the development of flexible solar cells, Is the key to solving these global challenges. This paper reviews the evolution of solar technology, highlighting the transition from traditional rigid panels to innovative thin-film photovoltaics such as cadmium telluride (CdTe), amorphous silicon, copper indium gallium selenide (CIGS), organic polymers, and perovskite solar cells. It delves into the engineering innovations that have propelled the field forward, including printing technologies and roll-to-roll processing, and explores the burgeoning applications of flexible solar cells in wearable electronics and building-integrated photovoltaics (BIPV). The discussion extends to the potential of emerging materials and technologies to enhance efficiency, stability, and environmental sustainability. Through a comprehensive analysis, this paper underscores the pivotal role of flexible solar cells in achieving a renewable energy future, emphasizing the need for continued research and development to overcome current limitations and fully realize their transformative potential.

Surface topography and subsurface structure evolution in laser micro polishing of monocrystalline silicon

Ultra-smooth silicon surfaces, crucial in short-wave optics, can be marred by surface defects and subsurface damage incurred during machining, thereby affecting the imaging quality and transmission efficiency of optical components. Laser micro-polishing emerges as a versatile and efficient technique for ultra-precision polishing. This study aims to scrutinize the surface topography and subsurface structural evolution of monocrystalline silicon wafers during laser micro-polishing experimentally and to formulate an accessible evaluation model that incorporates multiple process parameters for optimal polishing results. As laser fluence escalates, the polishing process can be divided into six regimes: bulge, coalescence, smoothness, groove, ripple, and ablation. Each regime's crystal structure evolution is analyzed using Raman spectroscopy, demonstrating a close relationship with the surface expansion preceding the melting of monocrystalline silicon. Surface roughness diminishes from 6 nm to 0.7 nm, and an optimal crystalline quality devoid of an amorphous layer, residual stress, or significant subsurface damage is achieved. Amorphous silicon, 20 μm thick, is converted into monocrystalline silicon through recrystallization, and subsurface distortions and dislocations are rectified due to silicon atom redistribution. Moreover, a mapping relationship between multiple process parameters and surface polishing effects is established. A dimensionless fluence considering multiple parameters is derived, and a predictive model for process parameter optimization to secure optimal polishing results is proposed.

Effect of Hydrogen Bonding and Chirality in Star-Shaped Molecules with Peripheral Triphenylamines: Liquid Crystal Semiconductors and Gels.

Organic semiconductors with well-defined architectures pose a suitable alternative to amorphous silicon-based inorganic semiconductors. Encouraged by the development of organic semiconductors based on columnar liquid crystals, herein, we report on a family of C3-symmetric star-shaped mesogens based on triphenylamine (TPA), a functional unit with strong electron donor character. Highly stable columnar phases with high hole mobility values were obtained out of this nonplanar functional unit, and this was achieved by using flexible amide spacers to join the TPA units to a tris(triazolyl)triazine (T) star-shaped core, allowing the formation of intermolecular hydrogen bonds. The presence of hydrogen bonds results in a stabilization of the columnar architectures either in bulk or in the presence of solvents by reinforcing π-stacking and van der Waals interactions, as deduced by Fourier-transform infrared (FTIR) and X-ray diffraction (XRD) studies. Furthermore, the introduction of a stereogenic center in the flexible spacer prompts the formation of chiral aggregates in the liquid crystal state and in the organogel formed in 1-octanol, as demonstrated by circular dichroism spectroscopy.

Textured Perovskite/Silicon Tandem Solar Cells Achieving Over 30% Efficiency Promoted by 4-Fluorobenzylamine Hydroiodide

HighlightsEvaporation and solution two-step hybrid process are used to fabricate conformal growth of perovskite film on textured silicon substrates.F-PMAI additive enlarged the perovskite grains, induced the (111) preferred orientation and passivated interface defects.We obtained a champion efficiency of 30.05% for a monolithic perovskite/silicon tandem solar cell based on a silicon thin film tunneling junction.

Observation of negative capacitance in silicon heterojunction solar cells: role of front contact in carrier depopulation

The origin of the low-frequency inductive loop in the Nyquist plot of the Ag/indium tin oxide (ITO)/p-a-Si:H/intrinsic hydrogenated amorphous silicon (i-a-Si:H)/c-Si/i-a-Si:H/n-a-Si:H/ITO/Al heterojunction (SHJ) solar cells and their effect on the device performance are investigated by adopting impedance spectroscopy under dark and light. The negative capacitance/low-frequency inductive loop originates from the depopulation of injected charge carriers due to a transport barrier at the p-a-Si:H/ITO interface. The p-a-Si:H hole-selective SHJ device with a low-frequency inductive loop also has shown an S-shape and associated performance degradation in the light current density–voltage characteristics due to the opposing field type transport barrier present at the p-a-Si:H/ITO interface, which was overcome after vacuum annealing at ∼200 °C. However, the NiO x -based hole-selective contact Ag/ITO/NiO x /i-a-Si:H/c-Si/i-a-Si:H/n-a-Si:H/ITO/Al SHJ cells have not shown any low-frequency inductive loop or corresponding S-shape and associated performance degradation due to the optimised contact (minimum resistance) between the NiOx and ITO layers.

Influence of Photonics and Plasmonics Effect on Ultrathin Amorphous Silicon Thin Film Solar Cell

Abstract Our recent surge in silicon derived materials has major demand in thin film photovoltaic (PV) modules and enhancing the significant numbers. The rigorous coupled wave analysis method is a simple and fast method also known as developed to determine the light absorption and cell efficiency. The optics of thin film solar cells (amorphous silicon) garnering crucial role in the photovoltaic market. In this work, an ultrathin thin film amorphous silicon solar cell PV performance investigated by periodically textured surfaces at the nanoscale level. This analysis of periodic textured substrate was deriving optimal surface textures. The nanogratings lead to light scattering mechanism with the higher order diffraction angle and enhanced the light absorption of the incidence spectrum. The influence of grating period and height, the collection of the charge carriers increased at various wavelengths from ultraviolet, visible and infrared spectral regions are discussed with the assistance of photonic and plasmonic modes. Finally, nanoscale engineering mechanism the optimized thin film amorphous silicon solar cell yielded the highest current densities (22.6 and 23.8 mA/cm2) in both polarization modes.

Fractional multiple trapping model of time-of-flight transient photocurrents in amorphous semiconductors

Fractional multiple trapping model of time-of-flight transient photocurrents in amorphous semiconductors

Fractional multiple trapping model of time-of-flight transient photocurrents in amorphous semiconductors

Модель многократного захвата оказалась весьма эффективной для понимания переноса неравновесных носителей заряда в аморфных полупроводниках. При определенных условиях эта модель описывается аномальными уравнениями диффузии с производными дробного порядка по времени. Это свидетельствует о полезности модели многократного захвата при интерпретации уравнений переноса дробного порядка, задании начальных и граничных условий и разработке численных методов решения кинетических уравнений дробного порядка. Представлен краткий обзор применения уравнений многократного захвата дробного порядка во времяпролетных экспериментах. Этот метод позволяет лучше понять связь между моделью многократного захвата и обобщенными кинетическими уравнениями дробного порядка. Найдены аналитические приближенные решения уравнения диффузии дробного порядка, включающего в себя многократный захват и преобразование Лапласа. Этот метод можно использовать для анализа пре- и постпролетных режимов переходного тока в аморфных полупроводниках с либо недисперсионным, либо дисперсионным переносом. Эффективность метода проиллюстрирована численным моделированием переходного тока с использованием обратного преобразования Лапласа и аппроксимации Паде. Результаты расчета хорошо согласуются с экспериментальными данными для тонких пленок аморфного селена. Полученные результаты открывают многообещающую перспективу. Во-первых, использование дробного исчисления для решения уравнений многократного захвата является новым по сравнению с имеющимися в литературе подходами и дает основания для включения в дробное исчисление эффектов памяти, когда на решение влияют предыдущие временны́е шаги. Во-вторых, численные результаты демонстрируют хорошее согласие с экспериментальными данными. Таким образом, дробное исчисление может помочь получить новые знания о поведении носителей заряда в аморфных полупроводниках.

Flexible TFT backplane development for extremely small bending radius with organic ILD and novel TFT structures

AbstractA new flexible low‐temperature polycrystalline silicon thin film transistors (LTPS TFTs) on PI substrate with organic ILD layer, island TFT, and TFT channel perpendicular to stress direction was proposed. AMOLED display panel manufactured with organic ILD did not show any visible degradation of panel image after outward rolling cycles of 200,000 at rolling radius of 4 mm or inward folding cycles of 200,000 at folding radius of 1 mm. Another novel structure of TFT with channel perpendicular to stress direction significantly reduced change of threshold voltage of −0.03 V compared with change of threshold voltage of −0.6 V for TFT with channel parallel to stress direction for reliability test of high drain current (HDC) after 100,000 outward‐bending cycles at bending radius of 3 mm. After inward‐bending cycles of 200,000 at bending radius of 1 mm, reliability test results for TFT device with organic ILD layer showed that change of on‐current is 10.07% for hot carrier instability (HCI) test, change of threshold voltage −0.31 V for negative bias thermal instability (NBTI) test, change of threshold voltage −0.24 V for hysteresis test, and breakdown voltage of gate insulator 7.73 MV/cm, respectively, and these performances are similar to those of TFT device with inorganic ILD (SiNx).

Structural, electronic, and optical properties of 6H-SiC layers synthesized by implantation of carbon ions into silicon

Systematic studies of the gradual fabrication by means of carbon ion-implantation of high-quality 6H-SiC layers on silicon surfaces have been carried out. The fluence of carbon ions varied from 5 × 1015 cm−2 to 1017 cm−2. Results of first-principle calculations, X-ray diffraction (XRD), and Raman spectroscopy demonstrate the amorphization of silicon substrate without any tendency to the segregation of carbon in the samples synthesized at low fluencies. The formation of a SiO2-like structure at this stage was also detected. X-ray photoelectron spectroscopy (XPS), XRD, and Raman spectroscopy demonstrate that an increase in carbon content at 1017 cm−2 fluence leads to the growth of 6H-SiC films on the surface of the amorphous silicon substrate. Atomic force microscopy (AFM) data obtained also demonstrates the decreasing of surface roughens after the formation of SiC film. XPS and Raman spectra suggest that excessive carbon content leaves the SiC matrix via the formation of an insignificant amount of partially oxidized carbon nanostructures. Optical measurements also support the claim of high-quality 6H-SiC film formation in the samples synthesized at 1017 cm−2 fluence and demonstrate the absence of any detectable contribution of nanostructures formed from excessive carbon on the optical properties of the material under study.

A re-examination of thin-film silicon’s Raman spectrum

A re-examination of thin-film silicon’s Raman spectrum

One step synthesis of durable slippery, oil/water selective, corrosion-resistant silicone coatings with grafted flexible sidechains

Slippery liquid-infused porous surfaces (SLIPSs) based on polymer matrices impregnated with liquid lubricants are multifunctional and provide a wide range of useful properties such as low adhesion of water and other liquids, selectivity, high corrosion resistance, etc. However, these properties vanish quickly due to the gradual depletion of lubricant from the matrix. This issue could be resolved by attaching lubricant molecules to the matrix as flexible, liquid-like sidechains. In the present work, thin silicone films with grafted sidechains are fabricated. The uniform coatings are obtained in “eco-friendly” pressurized (subcritical) CO2 on smooth silicon wafers as well as on rough porous substrates such as carbon aerogels. The possibility of applying films by the traditional dip-coating method is also demonstrated on titanium slides. The coatings demonstrate low sliding angles for water and water/alcohol solution droplets. Coated aerogels preserve high porosity. It is demonstrated that initially hydrophilic aerogels become highly hydrophobic after coating and selectively absorb oil from water/oil mixtures. The tests of obtained coatings on titanium substrates demonstrate a significant increase in corrosion resistance. The proposed technique has a wide range of potential applications where such slippery coatings should be applied on complex rough substrates: from filtration materials production to textile finishing.

Structure and optical properties of Si thin film improved by metal Cd nanolayers

Enhancing the characteristics of amorphous semiconductor thin films is imperative for a multitude of applications. The present study examines the impact of Cd nanolayers deposited on a thin film of amorphous Si. The X-ray test showed that the thin silicon film had less of an amorphous structure after a nanolayer of cadmium was added. There has also been the appearance of new phases, and as the thickness of the Cd nanolayer increases, so does the intensity of these phases. Using a field emission scanning electron microscope, it was seen that nanoparticles were developed and subsequently transformed into clusters as the thickness of the Cd nanolayer grew. The absorbance was maximized at 750 nm and near-infrared region after depositing Cd nanolayers, while transmittance was reduced, especially at 100 nm thicknesses. The energy gap was reduced, with a decrease from 5.1 to 1.8 electron volts (eV). However, an increase in the band tails was also noted, rising from 0.7 to 4.9 eV. An increase in the values of the refractive index (n) and extinction coefficient (k) was observed following the deposition of Cd nanolayers of different thicknesses.

Dual-input optoelectronic synaptic transistor based on amorphous ZnAlSnO for multi-target neuromorphic simulation

Optoelectronic synapses can perceive both optical and electrical signals, which are critical for the realization of neuromorphic computing. We have rationally designed an optoelectronic synaptic transistor based on amorphous ZnAlSnO for multi-target neuromorphic simulation and recognition. The dual-input models are well operated by applying light pulses on the channel and electric pulses on the gate, and the transformation from short-term potentiation (STP) to long-turn potentiation (LTP) is identified for tunable synaptic plasticity. In the electrical operation mode, a single-layer artificial neural network was established to recognize handwritten digits by LTP/LTD (long-turn depression) modulation, with a recognition accuracy of 89.2 % for the actual device. In the optical operation mode, the processes of repetitive learning, image recognition, and biased/correlated random-walk learning are simulated on the basis of frequency, quantity, and power of light, with an energy consumption per event as low as 4.3 pJ. This work will facilitate the development of future artificial synapses and highlights the potential of amorphous oxide semiconductors for next-generation computer hardware applications.

Polarization‐Enabled Tuning of Anapole Resonances in Vertically Stacked Elliptical Silicon Nanodisks

This work presents the polarization‐dependent behavior of the anapole state in stacked amorphous silicon (a‐Si) nanodisks with elliptical geometries. Using SiO2 as a spacer layer between the a‐Si disks, the high index contrast between these materials can be used to significantly reduce the fabrication complexity of the system compared to traditional methods that require additional etching of the spacers. A novel way of continuous tuning of the electric dipole anapole excitation within elliptical stacked a‐Si nanoresonators is demonstrated. By rotating the incident electric field's polarization angle, the anapole state can be selectively excited at two distinct wavelength positions separated by 80 nm. Experimental results show characteristic dips in the reflectance of the fabricated elliptical a‐Si stacks with wavelength positions between 1135 and 1217 nm depending on the polarization angle of the incident field which is corroborated by FDTD simulations. Through simulating the internal electric field in the resonators and using multipole decomposition, it is shown that the reflectance dips are due to anapole excitation in the individual disks. The capability to excite anapoles at two distinct wavelengths in the same structure has promising implications for the development of tunable sensors, frequency converters, and quantum memory applications.

Wet Etching of Silicon in Planar Nanochannels.

Silicon (Si) alkaline etching constitutes a fundamental process in the semiconductor industry. Although its etching kinetics on plain substrates have been thoroughly investigated, the kinetics of Si wet etching in nanoconfinements have yet to be fully explored despite its practical importance in three-dimensional (3-D) semiconductor manufacturing. Herein, we report the systematic study of potassium hydroxide (KOH) wet etching kinetics of amorphous silicon (a-Si)-filled two-dimensional (2-D) planar nanochannels. Our findings reveal that the etching rate would increase with the increase in nanochannel height before reaching a plateau, indicating a strong nonlinear confinement effect. Through investigation using etching solutions with different ionic strengths and/or different temperatures, we further find that both electrostatic interactions and the hydration layer inside the nanoconfinement contribute to the confinement-dependent etching kinetics. Our results offer fresh perspectives into the kinetic study of reactions in nanoconfinements and will shed light on the optimization of etching processes in the semiconductor industry.

Reliability evaluation of spacecraft power generation performance with competitive failure processes under irradiation

AbstractThe performance of space power systems is crucial for space products as it determines the operational capabilities, endurance, and efficiency of satellites, spacecraft, and other extraterrestrial devices. Unlike reliability analysis in aerospace systems, studying spacecraft power generation performance requires consideration of both hardware and software aspects. Existing failure models do not fully capture the self‐recovery process of control programs. Therefore, this study presents an impact degradation model for space power systems that incorporates competitive failures under irradiation conditions. The model analyzes solar arrays and power controllers to derive a performance degradation model by considering the defect formation mechanism of amorphous semiconductor materials. Additionally, two shock types are defined based on redundancy backup in power controllers and scrubbing frequency in field‐programmable gate array (FPGA) units. Within the case analysis section, the research meticulously investigates and elucidates the correlation probabilities among varying proton irradiation doses, scrubbing frequencies, and the aforementioned shock types.

Nickel–silicon interfacial adhesion strength measured by laser spallation

Thin films of amorphous silicon (a-Si) coated on metals such as nickel (Ni) are one of the most promising anode architectures for high-energy-density lithium-ion (Li-ion) batteries. The performance and longevity of batteries with this type of electrode depend on the integrity of the Ni/a–Si interface. The integrity of the a-Si /Ni bonded interface during cycling is critical, but the experimental characterization of interfacial failure of this material system is highly challenging and there is a sparsity of interface strength data in the literature. Here, we describe a laser spallation (LS) technique to characterize the interfacial adhesion strength of Ni/a–Si multilayer films created by chemical vapor deposition (CVD). The LS technique enables the non-contact measurement of the tensile interfacial strength with high precision when compared to conventional methods for characterizing adhesion. Interferometric measurement combined with finite element analysis shows that the Ni/a–Si interface, created via the CVD of a-Si on Ni surfaces can withstand ≈46–72 MPa in tension before failure initiation. To ensure successful and precise characterization of interfacial adhesion strength using LS, we further develop a design criterion for multi-layer samples by analyzing the thin-film mechanics. Our study provides insights into the strength of the Ni/a–Si interface that governs the performance and durability of high-energy-density anodes and offers design guidelines for improving thin-film electrode integrity.

Phonon transport simulation with an extended VOF scheme for nano-structured thin film

Control of phonon transport in solid devices is important for thermoelectric energy conversion and phononic crystal technology, and much attention has been paid to sub-micrometer or nanometer scale structures for that purpose. In order to investigate how various nano-structures affect the phonon transport, we have developed a numerical simulation code based on the Boltzmann transport equation of phonon distribution function in the reciprocal space. To appropriately treat the phonon transport at interface of an arbitrary shape, we newly introduced a volume of fluid like scheme, which was originally developed for multi-phase flow simulation. As a test of the developed simulation code, we investigated two-dimensional thin silicon films with two types of hole shape and two types of hole arrangement. The results essentially agree with recent experiments.