This paper illustrates the preparation of polycrystalline Pb(Zr,Ti)O 3 (PZT) thin film using sol–gel processing and spin coating method. Lead acetate, zirconium n-propoxide and titanium isopropoxide were used as raw precursors. The PZT thin films with lower gel concentration of 0.2 and 0.3 M were used and deposited on Al/Si 3N 4/Si (100) substrate. After drying at 150 °C, pre-baking at 350 °C and sintering at 600–700 °C, the amorphous PZT thin films have been changed to perovskite-type crystal structure. The influence of gel solutions concentration and heating conditions on the morphology of PZT thin films were discussed. The cracking problem was alleviated by employing lower gel concentration of 0.2 M with a drying at 150 °C for 5 min and a pre-baking at 350 °C for 10 min, and then sintering at 700 °C for 30 min with a heating rate 50 °C/min. The values of the remanent polarization ( P r) and coercive field ( E c) are 11.39 μc/cm 2 and 84.52 KV/cm, respectively.