Al2O3 Layer Research Articles

Microstructure, mechanical performance, thermal stability, and oxidation resistance of AlCrN/AlCrBN nano-multilayer coating

This study synthesized three different coatings using multi-arc ion coating technology: AlCrN, AlCrBN monolayer, and AlCrN/AlCrBN nano-multilayer coatings. A comparative investigation was conducted on the microstructure, mechanical performance, thermal stability, and oxidation properties of coatings. The results indicate the AlCrN, AlCrBN, and AlCrN/AlCrBN nano-multilayer coatings consist of face-centered cubic solid solution fcc-(Cr, Al)N phase. AlCrN/AlCrBN nano-multilayer coatings also exhibit better thermal stability and oxidation resistance than AlCrN and AlCrBN monolayer coatings. The AlCrN/AlCrBN nano-multilayer coatings have a dense, protective, Al2O3 layer formed during high-temperature oxidation. During high-temperature oxidation, the AM (amplitude modulation) decomposition of the AlCrN and AlCrBN monolayers in the AlCrN/AlCrBN nanolayers is inhibited by the structure of the multilayer coatings. The formation of dense oxides on the surface prevents the diffusion of Al and Cr atoms to the outside and prevents the diffusion of oxygen from the outside to the inside of the AlCrN/AlCrBN nanolayers.

Fabrication of ZnO–Al2O3 inverse opals with atomic layer deposited Amorphous-Al2O3 for enhanced photocatalysis

Zinc oxide inverse opal (IO) has excellent photocatalytic properties, while Al2O3 has high chemical stability and negligible photocatalytic activity. However, combining these materials creates a crystalline ZnO-amorphous Al2O3 composite IO photonic crystal material with improved photocatalytic performance. In this study, ZnO IO and ZnO–Al2O3 combined structures were grown on self-assembled polystyrene (PS) nanosphere templates. ZnO layer was coated by thermal atomic layer deposition (TALD) in the pores of the template, and the template was then removed by annealing to yield a self-standing ZnO IO nanostructure. An ultra-thin film of Al2O3 was coated on the top of ZnO IO by TALD or plasma-enhanced ALD (PEALD). SEM imaging, Raman spectroscopy, and XRD analysis confirmed the presence of a periodically arranged, and wurtzite ZnO IO structure, with an amorphous Al2O3 layer on top. The UV–Vis results demonstrated distinctive absorption bands in both regions, with a notable increase in visible light absorption attributed to the slow photon effect within the near-bandgap region of the photonic materials. The ZnO/Al2O3-TALD photocatalyst exhibited enhanced photocatalytic performance in degrading various pollutants including methylene blue, rhodamine 6G, and 4-nitrophenol under visible light illumination compared to its pristine IO and PEALD composite counterparts. This is attributed to its periodic arrangement of the IO structure that acts as a photonic crystal, precisely controlling light interaction through photonic band gap manipulation and the slow photon effect. This tailored light manipulation within the visible spectrum significantly enhances photodegradation efficiency.

In-situ EIS for corrosion detection in LiFSI-based Li-ion batteries

LiFSI-based electrolytes are frontiers amongst candidates for future generation of high-voltage and high-temperature capable Li-ion batteries. Arguably, the biggest disadvantage of these electrolytes is their undesirable ability to corrode aluminium current collectors. Hence, suppressing the Al corrosion in such electrolytes has become a widely discussed topic. Despite that, there is a lack of studies focusing on in-situ approaches for the detection of such corrosion, even though such approaches are essential for the effective evaluation of the performance of Li-ion batteries containing novel LiFSI-based electrolytes. This work demonstrates the usage of EIS for the detection of corrosion of Al current collectors in NMC/Graphite cells containing 1.0 M LiFSI in EC:DMC (1:1, v/v). When cycled up to 4.2 V at 50 °C, cathode-side Nyquist plots displayed induction loops developing over the cycles, which were ascribed to the corrosion of Al current collectors, and whose presence was confirmed by SEM imaging. When the cut-off voltage was decreased to 3.7 V to maintain a native protective Al2O3 layer and hence suppress the corrosion, neither the induction loops in Nyquist plots nor pitting holes in SEM images were observed, confirming the link between the induction loops and the corrosion. This work aims to support designing and understanding of future experiments focused on suppressing the corrosion of Al current collectors in LiFSI-based high-voltage Li-ion batteries capable of operation at higher temperatures.

Preparation and high temperature oxidation resistance of AlSiY coating by arc ion plating

AlSiY coating with excellent antioxidant property was deposited using the arc ion plating technique on a nickel-base single crystal superalloy René N5. The microstructures and morphologies of the coatings, the elemental content and composition of the phases were analyzed by scanning electron microscope (SEM) equipped with energy dispersive spectrometer (EDS), and X-ray diffractometer (XRD). The results showed that the AlSiY coating was primarily comprised with β-NiAl phase with well combined with the substrate after heat treatment. The average oxidation rate of the coating for 300 h oxidation at 1050 ℃ was 0.8570 mg/cm2, superior to that of the substrate with 1.0035 mg/cm2. The coating exhibited good resistance oxidation during 1050 ℃, and the main phase was β-NiAl phase with high Al content after 300 h oxidation, which suggested that the coating could form a dense Al2O3 layer. In the 1100 ℃ oxidation process, although the depleted aluminum zone of γ′-Ni3Al was formed under the oxide layer after 300 h oxidation, the coating still had a high Al content, which could generate a continuous oxide layer on the surface of coating. The average oxidation rate of coating and substrate was 1.4070 mg/cm2, 3.2730 mg/cm2, respectively, which could provide good oxidation resistance for substrate. The investigation could provide some guidance for the preparation and industrial production of aluminide coatings.

Carrier gradient core-double shell structure with heterojunction transition layer for significantly enhancing dielectric properties

In this work, to prohibit the undesirable large dielectric loss and electric-field distortion of the conductive fillers/polymer with a high dielectric constant, TiO2 (TO) and Al2O3 (AO) shells were successively coated on the surface of amorphous carbon (C) to prepare the C@TO@AO core-double shell nanoparticles. This novel design of gradually varying the multilayer hierarchical interface achieved the gradient reduction of carrier concentration from the C core to the TO and AO layers. And the introduction of the multilayer hierarchical interface was advantageous to the enhancement of interface polarization. Moreover, the excellent integrated dielectric properties could be effectively achieved by adjusting the layer thickness and crystal structure of the TO layer. It was worth noting that the TO transition layer with anatase and rutile heterojunctions (HTO) had a significant enhancement in the dielectric constant of the composites induced by the strength of interfacial polarization and built-in electric field inside the HTO layer. Furthermore, the simulated electric field distribution inside the composites was further investigated to reveal the mechanism of enhanced dielectric properties. This work exerts important guiding significance for the reasonable structure design and the elaborate regulation of the shell micro-structures to improve the dielectric properties of composites.

Cohesively improved conductivity, transparency, and stability of Ag NW flexible transparent conductive thin films by covering Al2O3 layer

Developing feasible Ag nanowire (NW) transparent conductive thin films (TCFs) with good conductivity, transparency, mechanical durability, strong adhesion, and high stability is a great challenge. Herein, novel TCFs composed of Ag NWs/Al2O3 on polyethylene terephthalate (PET) substrates with synchronously improved conductivity, transparency, mechanical durability, adhesion, and stability, are prepared. The corresponding values (before coating Al2O3: 13.0 Ω/sq. at 86.1 %, after coating Al2O3: 11.7 Ω/sq. at 87.7 %) indicate that the deposition of Al2O3 enhances the transparency and conductivity of Ag NW networks. Moreover, the resistance does not change significantly after 50 taping cycles and 2000 bending cycles with a bending radius of 5.0 mm, indicating the strong adhesion and good mechanical flexibility of Al2O3/Ag NWs composites. In addition, Al2O3/Ag NWs composites possess excellent stability to resist strong oxidizing, hot and humid environments. As a proof of concept, the flexible transparent heater prepared by Al2O3/Ag NWs composites is successfully demonstrated, verifying the practicability.

Effects of Al2O3 Rear Interface Passivation on the Performance of Bifacial Kesterite‐Based Solar Cells with Fluorine‐Doped Tin Dioxide Back Contact

Herein, ultrathin Al2O3 is investigated as a rear interface passivation layer for kesterite solar cells with F:SnO2 (FTO) back contact for potential performance improvement. On the passivation layer, a thin Mo layer is deposited to improve the FTO's ohmicity. Further, NaF is evaporated on the copper zinc tin sulfide (CZTS) precursors to create openings at the passivation layer and achieve Na‐induced benefits in the absorber. The CZTS absorbers deposited directly on the Al2O3‐coated FTO peel off, while those with Mo interlayer do not. For pure sulfide kesterite devices, the Al2O3 layer reduces the short‐circuit current density (JSC), resulting in poor device efficiency. On the other hand, significantly higher JSC is realized for mixed sulfide and selenide kesterite devices with Al2O3 passivation layer, with the current density–voltage curve suggesting a reduced barrier height at the rear interface. As a result, the efficiency is improved from 1.5% for devices without Al2O3 to 4.6% for those with Al2O3. Likewise, improved external quantum efficiency response is observed in the devices with passivation layer for backside and frontside illumination. Therefore, contribution of Al2O3 passivation layer to the performance of kesterite‐based solar cells is evident from the results of this study.

Noise analysis and optical response of microwave kinetic inductance detectors with an optical stack

We report on the experimental investigation of optical coupling for superconducting microresonators known as microwave kinetic inductance detectors (MKIDs) in the visible and near-infrared bands. MKIDs are photon-counting, time and energy-resolving detectors that still suffer from a poor quantum efficiency. To improve this efficiency, we propose to add a superconducting reflective layer below the absorbing part of the detector separated by a transparent Al2O3 layer with a quarter-wavelength thickness optimized around a single wavelength λ = 405 nm. We have first fabricated samples patterned from stoichiometric TiN ( Tc∼4 K), one with the full optical stack, one without for reference and one with a partial optical stack in order to characterize the noise influence of each layer individually. We observe that the full optical stack geometry has the most impact on the resonator’s noise and quality factors. A second design was fabricated to characterize the optical response to short pulses of the optical stack and we show from both the frequential noise and optical response that a strong signature of TLS is still present in the optical stack sample. We have finally obtained single-photon response with the optical stack using a more sensitive tri-layer TiN/Ti/TiN absorber ( Tc∼1.3 K) for which a maximum energy resolving power of R=E/ΔE∼ 1.3 was achieved using 405 nm laser pulses at 225 mK. The quality factors of both the reference and optical stack samples are similar but the frequency noise is still a tenfold higher for the optical stack sample which degrades the energy-resolving power of the detector.

Built-in field manipulation through a perovskite homojunction for efficient monolithic perovskite/silicon tandem solar cells

Perovskite-silicon tandem solar cells offer a solution to exceed the Shockley–Queisser limit of their respective single-junction counterparts and significantly reduce the levelized cost of energy (LCOE) of photovoltaic systems. While thick perovskite film is imperative in this tandem configuration to ensure complete coverage on the textured silicon surface, it gives rise to great challenges for carrier transport and extraction. Herein, we designed a layer of mesoporous Al2O3 at the buried interface to establish a perovskite homojunction and mitigate the inherent adverse electric field in the perovskite film. Results showed that the Al2O3 layer evidently interacted with the organic cations of perovskite materials, effectively suppressing the spontaneous ion migration during crystallization. Thus, it altered the semiconductor type of the perovskite film at the buried interface from n-type to p-type, enabling the formation of perovskite homojunction and rendering it suitable for inverted perovskite solar cells (PSCs) by enhancing the built-in electric field. As a result, an outstanding power conversion efficiency (PCE) of 22.16 % is attained for a single junction 1.67 eV PSCs. Furthermore, we successfully crafted efficient monolithic perovskite/silicon tandem solar cells with this strategy, achieving an impressive PCE of 29.04 %. This study highlighted the critical importance of regulating local ion distribution in perovskite films and enhancing the built-in electric field for tandem configurations, which also provided a fresh perspective on the role of mesoporous Al2O3 in PSCs.

Hermetic, Hybrid Multilayer, Sub‐5µm‐Thick Encapsulations Prepared with Vapor‐Phase Infiltration of Metal Oxides in Conformal Polymers for Flexible Bioelectronics

AbstractReliable long‐term function is crucial for flexible and soft bioelectronics. Mechanical defects and permeation of water molecules across the various device layers are the prime drivers of failure, and particularly in applications requiring continuous contact with biofluids (i.e. for implantable applications). To address demanding needs of miniaturization, mechanical compliance and water impermeability, ultra‐thin high‐barrier encapsulations are a promising way to improve device reliability. In this work, the encapsulation properties of vapour phase infiltration (VPI) of inorganic Al2O3 layers deposited by atomic layer deposition (ALD), as bilayers with TiO2, onto polyimide and parylene C organic substrates are investigated. The layers are grown in a single reactor and the infiltration is performed in a single process, with a resulting nanometric infiltration depth. Mechanical integrity and hermeticity are characterized through tensile fragmentation tests and accelerated aging tests. Flexible Magnesium sensors monitor water vapor permeability in situ. A remarkable improvement in the crack onset strain (∽2.56 times), interfacial shear strength (∽2.1 times), water vapour transmission rate (∽5.2 times) and lifetime performance (∽7.1 times) is achieved, compared to the non‐infiltrated ALD coatings. Pluri‐infiltrated multilayers are proposed as alternatives to conventional coatings. This work is envisioned to accelerate research progress on hermetic packaging of flexible bioelectronics.

Preparing high performance FeAl/Al2O3 coating as tritium permeation barrier

Preparation of tritium permeation barrier (TPB) coating on the surface of structural materials is one of the most effective solutions to solve the issue of tritium permeation in tritium breeder blanket. The FeAl/Al2O3 coating is considered as the most promising candidate material for TPB coating due to its low hydrogen isotopes permeability, good adhesion and excellent radiation resistance. However, the current reported performance of FeAl/Al2O3 coating is much lower than its theoretical value. This work proposed a three-step process to prepare FeAl/Al2O3 TPB coating. By magnetron sputtering deposition, aluminizing and in-situ oxidation, a layer of high quality γ-Al2O3 about 250 nm thick was successfully formed on the 304 stainless steels. The Al2O3 layer was dense and no obvious defects were found. The gas-driven permeation measurements showed that the coating sample had strong ability to inhibit deuterium permeation, where the deuterium permeation flux was reduced by 5 orders of magnitude compared to the uncoated one at 600 °C, which is the best reported performance. Meanwhile, the thermal shock resistance test showed that the coating had no cracks after 50 thermal cycles. Moreover, the coating had a high electrical resistivity of approximately 3.42 × 1014 Ω cm, which could effectively reduce the magneto-hydrodynamic pressure drop (MHD) effects.

Improved Ga2O3 films on variously oriented Si substrates with Al2O3 or HfO2 buffer layer via atomic layer deposition

Ga2O3 is an ultrawide-band-gap semiconductor with excellent properties and promising applications in the electronic and optoelectronics. For acting as the substrate for heteroepitaxial Ga2O3 films, Si has the advantages of wafer-level size, cheap price and nice compatibility whereas also perform the disadvantage of large thermal mismatch. In this paper, the apparent flower-like defects are exhibited on the macroscopic surfaces of annealed Ga2O3 films deposited on (100), (110) and (111) oriented Si substrates by atomic layer deposition (ALD) method. The reason is ascribed to the different thermal expansion coefficients between Ga2O3 and Si induced compressive and tensile stresses. The Al2O3 or HfO2 buffer layer intercalated between Ga2O3 films and Si substrates via successive ALD process suppress the flower-like defects effectively while the surface roughnesses are low to be 1.290 nm and 2.393 nm, respectively. XRD spectra demonstrate that buffer layer indeed relieves the stress of Ga2O3 films on Si substrates while the amorphous Al2O3 has better influence than the polycrystalline HfO2. The results are helpful to the improvement of growth quality and device property of Ga2O3.

Interfacial wetting and reacting between pyrolytic graphite and Sn–Ag–Cu–Al alloy under ultrasonication at a low temperature

Poor wetting and bonding serve as significant challenges in the joining of carbon materials at low temperatures. In this work, the ultrasonically assisted hot dipping of pyrolytic graphite was investigated in a SnAgCu–2Al liquid metal at a low temperature of 250 °C in air. During the ultrasonic-assisted hot-dipping process, the filler metal filled into the surface grooves of pyrolytic graphite. A closely contacting interface formed between the pyrolytic graphite and the filler metal. Interlayer penetration induced by the cavitation effect, and the amount and depth of penetration increased with ultrasonication time. A transition layer of Al2O3 was formed at the interface between pyrolytic graphite and the filler metal. Large amounts of O atoms were induced at the interface during the ultrasonically assisted hot-dipping process, and the reaction of Al and O preferentially occurred between the liquid metal and solid C. This was consistent with the thermodynamic calculation results. The joining of metallizing-pyrolytic graphite was achieved by soldering at same temperature of 250 °C in air, where the highest joint strength could reach 17.52 MPa, achieving a joining module with a high thermal conductivity of 392 W/(m·K) and reaching 90 % of the base material.

Effects of nitrogen content on the phase composition and high-temperature steam oxidation resistance of Cr0.5Al0.5Nx (x = 0.33, 0.81, 1.23) coatings on Zry-4 alloy

Cr0.5Al0.5Nx (x = 0.33, 0.81, 1.23) coatings were deposited on Zry-4 alloy using magnetron reaction sputtering technique to investigate their application as accident-tolerant fuel materials. The effects of nitrogen (N) content on the phase composition and high-temperature steam oxidation resistance of the coatings were systematically investigated. With the increasing N content, the phase composition of the coatings is mainly transformed from Cr(Al) to the cubic-CrAlN phase, which may be due to the formation of a greater number of CrN bonds and AlN bonds. The high-N content of the Cr0.5Al0.5Nx coating can significantly enhance the high-temperature steam oxidation resistance of zirconium alloy. Compared to the bare Zr alloy, the weight gain oxidation of the Cr0.5Al0.5N1.23 coating is reduced by 45 % after oxidation at 1200 °C for 1 h. The oxide layer thickness of the bare Zry-4 alloy is as high as 350 μm, while the oxide layer thickness of the Cr0.5Al0.5N1.23 coating is only about 12 μm. The complex oxide layer structure and an internal continuous Al2O3 layer are formed, effectively preventing the inward diffusion of O2−. In addition, with the increase of N content in the coatings, the degree of interdiffusion between the coating and the substrate is weakened. The formation of α-Zr(N) layer in the Cr0.5Al0.5N1.23 coating significantly inhibits the interdiffusion between the coating and the substrate.

Microstructure and excellent arc ablation resistance of Ni–8Al coating on copper substrate by high-speed laser cladding

In the case of electrical contact, copper alloys are often unable to withstand arc ablation and premature failure. To solve this issue, Ni-8wt.%Al (Ni–8Al) coatings were successfully prepared on copper substrates utilizing the high-speed laser cladding. In addition, the microstructure evolution, microhardness, electric conductivity and arc ablation resistance of the prepared coatings were investigated in detail. As a result, the achieved Ni–8Al coatings were structurally dense with good metallurgical bonding to the substrate, of which the microstructure showed a bottom-up evolution of fine sub-grain structure. Notably, the microhardness of the coating was 191.7 HV0.2, representing an increase of 82.57% compared to the substrate, and the electrical conductivity was 18.03 %IACS, approaching that of pure nickel. Additionally, the increase in ablation currents led to changes in the ablation behaviors and failure mechanisms of both the substrate and coating. At high currents, a huge arc ablation crater appeared in the center of the substrate due to the reaction force of the anode flame and the difference in surface tension between the liquid metal at the center and the edge of the molten pool. Nevertheless, the coatings showed better arc ablation resistance due to the improvement of molten pool stability during arc ablation by the in situ formed Al2O3 layer on the coating surface.

NO2 sensing characteristics by α-Fe2O3 nanorod arrays with atomic layer deposited amorphous Al2O3 overlayer

We have grown α-Fe2O3 nanorods by solution processing followed by the deposition of Al2O3 overlayer using atomic layer deposition. Al2O3 layer was deposited for two different thicknesses 4 nm and 8 nm and a post-deposition annealing at 550 °C for 2 h in air atmosphere was performed. Crystallinity analysis through x-ray diffraction (XRD) reveals that the α-Fe2O3 nanorods crystallized into rhombohedral structure, whereas the outer Al2O3 layers remained largely amorphous. Interestingly, the interface showed signs of AlFexOy formation as observed through high-resolution transmission electron microscopy images. Gas sensing characteristics were studied using NO2 with 10, 50, and 100 ppm concentrations at operating temperatures of 30 °C, 100 °C, 150 °C and 190 °C. The room temperature sensitivity values obtained in response to 10 ppm NO2 were 31%, which surpassed the previously reported values. A higher concentration of surface adsorbed oxygen on the Al2O3 overlayer, as revealed by the x-ray photoelectron spectroscopy (XPS) analysis, led to enhanced NO2 sensing at room temperature. A lower activation energy (0.29 eV) of barrier to charge transport for Al2O3 coated α-Fe2O3 nanorods compared to that of bare nanorods (0.45 eV), as calculated from the temperature dependent I-V measurements, supported observation of higher sensitivity at room temperature.

The Effect of Al2O3 on the Performance of Perovskite Solar Cells

Improving the power conversion efficiency (PCE) and stability of perovskite solar cells (PSCs) remain the two most important goals of perovskite research. Herein, the effects of Al2O3 interlayer on the performance of formamidinium‐cesiums and “triple cation” PSCs by depositing a thin Al2O3 layer via atomic layer deposition on different interfaces are analyzed. It is found that it can efficiently serve as a passivation layer of perovskite absorber, as a seed layer for the compact growth of the subsequent SnO2 layer, or as a capping layer to the whole cell in the superstrate configuration to prevent moisture ingress. The optimized devices utilizing Al2O3 have on average more than 1% absolute higher PCE, with reduced penetration of moisture inside the device. Especially, the capping layer has shown the greatest benefit, extending the stability of the devices by more than two times and allowing long‐term operation without encapsulation. In the best case, a T80 time of almost 900 h under day/night‐cycling illumination is obtained. The observed trends are based on data from a large number of devices (more than 300 devices were tested in the maximum power point), which give statistical relevance to the promising results.

6‐2: High Subthreshold Swing a‐IGZO Driving TFTs Without Mobility Degradationfor Low‐Gray Level Image Quality Improvement in Active‐Matrix OLED

In this paper, high subthreshold swing (SS) amorphous In‐Ga‐Zn‐O (a‐IGZO) thin‐film transistors (TFTs) were fabricated using a sputtered Al2O3 layer, which was deposited on an active layer of the conventional bottom‐gate a‐IGZO TFTs and patterned using photolithography. By optimizing the Al2O3layer, high SS without mobility degradation could be achieved.

Facile Fabrication of Large-Area CuO Flakes for Sodium-Ion Energy Storage Applications.

CuO is recognized as a promising anode material for sodium-ion batteries because of its impressive theoretical capacity of 674 mAh g-1, derived from its multiple electron transfer capabilities. However, its practical application is hindered by slow reaction kinetics and rapid capacity loss caused by side reactions during discharge/charge cycles. In this work, we introduce an innovative approach to fabricating large-area CuO and CuO@Al2O3 flakes through a combination of magnetron sputtering, thermal oxidation, and atomic layer deposition techniques. The resultant 2D CuO flakes demonstrate excellent electrochemical properties with a high initial reversible specific capacity of 487 mAh g-1 and good cycling stability, which are attributable to their unique architectures and superior structural durability. Furthermore, when these CuO flakes are coated with an ultrathin Al2O3 layer, the integration of the 2D structures with outer nanocoating leads to significantly enhanced electrochemical properties. Notably, even after 70 rate testing cycles, the CuO@Al2O3 materials maintain a high capacity of 525 mAh g-1 at a current density of 50 mA g-1. Remarkably, at a higher current density of 2000 mA g-1, these materials still achieve a capacity of 220 mAh g-1. Moreover, after 200 cycles at a current density of 200 mA g-1, a high charge capacity of 319 mAh g-1 is sustained. In addition, a full cell consisting of a CuO@Al2O3 anode and a NaNi1/3Fe1/3Mn1/3O2 cathode is investigated, showcasing remarkable cycling performance. Our findings underscore the potential of these innovative flake-like architectures as electrode materials in high-performance sodium-ion batteries, paving the way for advancements in energy storage technologies.

Development and Fabrication of a Multi-Layer Planar Solar Light Absorber Achieving High Absorptivity and Ultra-Wideband Response from Visible Light to Infrared.

The objective of this study is to create a planar solar light absorber that exhibits exceptional absorption characteristics spanning from visible light to infrared across an ultra-wide spectral range. The eight layered structures of the absorber, from top to bottom, consisted of Al2O3, Ti, Al2O3, Ti, Al2O3, Ni, Al2O3, and Al. The COMSOL Multiphysics® simulation software (version 6.0) was utilized to construct the absorber model and perform simulation analyses. The first significant finding of this study is that as compared to absorbers featuring seven-layered structures (excluding the top Al2O3 layer) or using TiO2 or SiO2 layers as substituted for Al2O3 layer, the presence of the top Al2O3 layer demonstrated superior anti-reflection properties. Another noteworthy finding was that the top Al2O3 layer provided better impedance matching compared to scenarios where it was absent or replaced with TiO2 or SiO2 layers, enhancing the absorber's overall efficiency. Consequently, across the ultra-wideband spectrum spanning 350 to 1970 nm, the average absorptivity reached an impressive 96.76%. One significant novelty of this study was the utilization of various top-layer materials to assess the absorption and reflection spectra, along with the optical-impedance-matching properties of the designed absorber. Another notable contribution was the successful implementation of evaporation techniques for depositing and manufacturing this optimized absorber. A further innovation involved the use of transmission electron microscopy to observe the thickness of each deposition layer. Subsequently, the simulated and calculated absorption spectra of solar energy across the AM1.5 spectrum for both the designed and fabricated absorbers were compared, demonstrating a match between the measured and simulated results.