High efficiency of the polyamide membranes can be achieved by rationally tailoring the active layer, which empowers the membrane with better anti-fouling characteristics, high flux, and separation efficiencies. Herein, a next-generation anti-fouling positively charged copolymer of diallyldimethylammonium chloride (DADMAC) and N1, N1-diallyldodecane-1,12-diammonium chloride (DADAC) was synthesized and thoroughly characterized by TGA, FTIR, proton (1H) and the carbon (13C) NMR. The synthesized poly(DADMAC-co-DADAC), after conversion to poly(DADMAC-co-DADA) having free NH2 group, was in-Situ grafted while forming the active layer due to its rationally designed anchoring points of NH2 group. The in-Situ grafting resulted in a cross-linked polyamide active layer containing positively charged brushes of poly (DADMAC-co-DADA) at regular intervals. The AFM analysis has shown that the polyamide layer's surface roughness increased with the poly-(DADMAC-co-DADA) grafting concentration, which positively impacts the membranes' flux. When exposed to the water, the grafted poly-(DADMAC-co-DADA) expanded and spread a positively quaternary ammonium network on the membrane surface, effectively repelling the cations. The introduced membrane has shown high performance compared to the pristine polyamide membrane. The functionalized membranes have displayed a 3.5 times flux for 2000 ppm of NaCl while maintaining a good rejection at 93.1%. The anti-fouling behavior of the membranes was evaluated against the model positively charged CTAB (cetyltrimethylammonium bromide) foulants (2000 ppm). Poly- (DADMAC-co-DADA) grafted membranes have shown a high anti-fouling tendency. After 600 min (10 h) of continuous operation, the flux declined less than 15%, whereas the pristine polyamide membrane lost 99%. The poly-(DADMAC-co-DADA) grafted membranes recovered more than 93% of their maximum flux. Thus, the in-Situ grafting of positively charged polymer is a possible opportunity to develop the next generation of high-performance polyamide membranes.
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