2D Ferromagnetic Semiconductors Research Articles

Two-dimensional ferromagnetic semiconductors have attracted great attention due to their applications in the next generation of nanoscale spintronics. However, experimentally confirmed two-dimensional ferromagnetic semiconductors are rather limited and suffer from a rather low Curie temperature. Based on density functional theory, the structure, electronic, and magnetic properties of the CrCl3-xBrx (x = 0, 1, 2, 3) monolayers are systematically explored. As a result, they are all semiconductors with intrinsic ferromagnetism, and their band gaps decrease with increasing Br composition. Interestingly, due to the joint effects of spin-orbit coupling and magnetic dipole-dipole interaction, the magnetic easy axes have a transition from in-plane to out-of-plane with Br composition increasing. In addition, by the isovalent alloying method, the FM coupling of CrCl3-xBrx can be remarkably enhanced, and their Curie temperature can be increased to 120 K, 130 K, 145 K and 170 K without introducing any carriers, respectively. Besides, the CrCl3-xBrx monolayers have good thermal and dynamical stability, and their small exfoliation energies confirm that they can be exfoliated from the bulk flexibly. Our findings not only provide an effective method to improve ferromagnetism in 2D semiconductors but also provide a class of potential candidates for realistic spintronic applications.

2D ferromagnetic semiconductors are recognized as the cornerstone of next-generation spintronics devices. However, their practical applications are severely hindered by the low Curie temperature, which originates from the weak d-p-d ferromagnetic superexchange interaction. H- anion with short ionic radius can effectively shorten the distance between magnetic centers and simultaneously induce a perfect 180° superexchange angle to strengthen the magnetic coupling, thus achieving high-temperature magnetic ordering. Here, by first-principles calculations, such a case in 2D Ruddlesden-Popper phase hydride double perovskite A4NiVH8 (A = Na, K, Rb) is demonstrated. These hydride monolayers possess quite good thermodynamic stability and can retain their structures under normal pressure at least at 500 K. Magnetic and electronic properties calculations reveal that they are all ferromagnetic semiconductors with high Curie temperatures (up to 429 K) and superior electron mobilities (up to 5522 cm2 V-1 s-1, based on the deformation potential theory). In addition, monolayer Na4NiVH8 exhibits the characteristics of a bipolar magnetic semiconductor with gate-tunable spin polarization.

The discovery of two-dimensional (2D) ferromagnetic semiconductors holds significant promise for advancing Moore's law and spintronics in-memory computing, sparking tremendous interest. However, the Curie temperature of explored 2D ferromagnetic semiconductors is much lower than room temperature. Although plenty of 2D room-temperature ferromagnetic semiconductors have been theoretically predicted, there have been formidable challenges in preparing such metastable materials with ordered structures and high stability. Here, utilizing a novel template-assisted chemical vapor deposition strategy, we synthesized layered MnS2 microstructures within a ReS2 template. The high-resolution atomic structure representation revealed that monolayer MnS2 microstructures well crystallize into a distorted T-phase. Room-temperature ferromagnetism was confirmed through vibrating sample magnetometer measurements, microzone magnetism imaging techniques, and transport characterization. Theoretical calculations indicated that the room-temperature ferromagnetism originates from the Mn-Mn short-range interaction. Our observation not only offered the experimental confirmation of the intrinsic room-temperature ferromagnetism in layered MnS2, but also provided an innovative strategy for the growth of 2D metastable functional materials.

First-principles study on 2D ferromagnetic semiconductor in Janus single-layer CrXY (X = P, As; Y = Cl, Br, I)

Two-dimensional (2D) magnetic materials offer promising prospects for applications in magnetic storage and spin field-effect transistors. However, the inherently low Curie temperatures of intrinsic 2D ferromagnetic semiconductor materials pose significant limitations on their practical device applications. An effective approach to achieving room-temperature ferromagnetism involves doping non-magnetic semiconductors with specific magnetic atoms. Here, we present the room-temperature ferromagnetism of chromium (Cr)-doped molybdenum disulfide (MoS2) nanosheets synthesized through chemical vapor deposition. The magnetic hysteresis loops, recorded across a temperature span of 10–300 K, underscore the remarkable stability of their magnetic attributes. To gain deeper microscopic insights into the magnetic properties of Cr-doped MoS2, we conducted first-principles calculations, which further validated our experimental findings. This research underscores a promising pathway for the development of 2D ferromagnetic materials with broad application potential in magnetic storage and spin field-effect transistors.

Abstract Two-dimensional (2D) ferromagnetic (FM) semiconductors with high Curie temperature (T c ) and large perpendicular magnetic anisotropy (PMA) are promising for developing next-generation magnetic storage devices. In this work, we investigated the structural, electronic, and magnetic properties of MoF3 and Janus Mo2F3 X 3 (X = Cl, Br, I) monolayers by first-principles methods. These materials are 2D FM semiconductors with large PMA and half-semiconducting character as both VBM and CBM belonging to the spin-up channel. Biaxial strain can modulate band gap, reverse easy magnetization axis, and induce magnetic phase transitions in MoF3 monolayer and its Janus structures. Compared to MoF3 monolayers, Janus Mo2F3 X 3 monolayers can preserve the structural ability and the FM ground state over a wider range of strain. The magnetic anisotropy energies (MAEs) of these 2D materials can be enhanced to greater than 1 meV/Mo by tensile strains. Intrinsic T c of MoF3 monolayer and its Janus structures are less than 110 K and are insensitive to strain. However, hole doping with a feasible concentration can achieve a room-temperature half-metallicity in these 2D materials. The required hole concentration is lower in Janus Mo2F3 X 3 monolayers than MoF3 monolayer. Our results indicate that MoF3 and Janus Mo2F3 X 3 (X = Cl, Br, I) monolayers are promising candidates for 2D spintronic applications and will stimulate experimental and theoretical broad studies.

Giant tunnel magnetoresistance in in-plane magnetic tunnel junctions based on the heterointerface-induced half-metallic 2H-VS[formula omitted]

Abstract2D magnetic semiconductors exhibit great potential for next‐generation spintronics, but realizing their full capabilities has been hindered by the low Curie temperatures (Tc) below 50 K observed in current materials. Here, a new mechanism to substantially enhance the Tc of 2D semiconducting materials through incorporating both in‐plane and out‐of‐plane superexchange interactions enabled by structural design is demonstrated. Specifically, monolayer Cr2Se3 is synthesized with a five‐layer Se–Cr–Se–Cr–Se atomic structure using molecular beam epitaxy (MBE). This unique structure not only possesses optimized in‐plane superexchange interaction but also incorporates out‐of‐plane Cr–Se–Cr couplings. Scanning tunneling spectroscopy (STS) and angular‐resolved photoemission spectroscopy (ARPES) confirm its semiconducting nature. Remarkably, the ferromagnetic phase transition observed by ARPES and Magnetic Force Microscopy (MFM) indicated that its Tc is up to 230 K. This not only establishes a new record for Tc in 2D ferromagnetic semiconductor materials but also introduces a novel approach to modulating materials' properties by manipulating the vertical dimension in 2D materials.

Electric control of magnetization dynamics in two-dimensional (2D) magnetic materials is an essential step for the development of novel spintronic nanodevices. Electrostatic gating has been shown to greatly affect the static magnetic properties of some van der Waals magnets, but the control over their magnetization dynamics is still largely unexplored. Here we show that the optically-induced magnetization dynamics in the van der Waals ferromagnet Cr2Ge2Te6 can be effectively controlled by electrostatic gates, with a one order of magnitude change in the precession amplitude and over 10% change in the internal effective field. In contrast to the purely thermally-induced mechanisms previously reported for 2D magnets, we find that coherent opto-magnetic phenomena play a major role in the excitation of magnetization dynamics in Cr2Ge2Te6. Our work sets the first steps towards electric control over the magnetization dynamics in 2D ferromagnetic semiconductors, demonstrating their potential for applications in ultrafast opto-magnonic devices.

Two-dimensional (2D) semiconductors have attracted considerable attention for their potential in extending Moore's law and advancing next-generation electronic devices. Notably, the discovery and development of 2D ferromagnetic semiconductors (FMSs) open exciting opportunities in manipulating both charge and spin, enabling the exploration of exotic properties and the design of innovative spintronic devices. In this review, we aim to offer a comprehensive summary of emerging 2D FMSs, covering their atomic structures, physical properties, preparation methods, growth mechanisms, magnetism modulation techniques, and potential applications. We begin with a brief introduction of the atomic structures and magnetic properties of novel 2D FMSs. Next, we delve into the latest advancements in the exotic physical properties of 2D FMSs. Following that, we summarize the growth methods, associated growth mechanisms, magnetism modulation techniques and spintronic applications of 2D FMSs. Finally, we offer insights into the challenges and potential applications of 2D FMSs, which may inspire further research in developing high-density, non-volatile storage devices based on 2D FMSs.

Two-dimensional (2D) ferromagnetic semiconductors (FMSs) hold exciting and promising potential for application in spintronic devices at the nanoscale. Currently, most 2D FMSs are based on 3d electrons; 4f electrons can provide nontrivial magnetism but have been much less studied to date. This paper presents a theoretical study, via first-principles calculations, of EuSn2X2 (X = P, As) monolayers based on rare-earth cations with f-electrons. The results show that EuSn2X2 monolayers possess a large magnetization (7 μB/Eu), a controllable magnetic anisotropy energy, and a unique d-electron-mediated f–f exchange mechanism. Both types of EuSn2X2 (X = P, As) monolayers are FMSs with indirect bandgaps of 1.00 and 0.99 eV, respectively, based on the Heyd–Scuseria–Ernzerhof (HSE06) method, which can be transform to direct bandgap semiconductors under biaxial strain. Interestingly, under the latter, spin–orbit coupling interaction gradually replaces the dipole–dipole interaction in the dominant position of magnetic anisotropy, resulting in the magnetic easy axis changing from in-plane to the more desirable out-of-plane. Considering their excellent dynamic, thermal, and mechanical stabilities and small cleavage energy, these EuSn2X2 monolayers can be exfoliated from their synthesized bulk. Our study not only helps to understand the properties of 2D 4f rare-earth magnets but also signposts a route toward improving the performance of EuSn2X2 monolayers in nano-electronic devices.

The two-dimensional (2D) van der Waals ferromagnetic semiconductors, such as CrI$_3$ and Cr$_2$Ge$_2$Te$_6$, and the 2D ferromagnetic metals, such as Fe$_3$GeTe$_2$ and MnSe$_2$, have been obtained in recent experiments and attracted a lot of attentions. The superexchange interaction has been suggested to dominate the magnetic interactions in these 2D magnetic systems. In the usual theoretical studies, the expression of the 2D Heisenberg models were fixed by hand due to experiences. Here, we propose a method to determine the expression of the 2D Heisenberg models by counting the possible superexchange paths with the density functional theory (DFT) and Wannier function calculations. With this method, we obtain a 2D Heisenberg model with six different nearest-neighbor exchange coupling constants for the 2D ferromagnetic metal Cr$_3$Te$_6$, which is very different for the crystal structure of Cr atoms in Cr$_3$Te$_6$. The calculated Curie temperature Tc = 328 K is close to the Tc = 344 K of 2D Cr$_3$Te$_6$ reported in recent experiment. In addition, we predict two stable 2D ferromagnetic semiconductors Cr$_3$O$_6$ and Mn$_3$O$_6$ sharing the same crystal structure of Cr$_3$Te$_6$. The similar Heisenberg models are obtained for 2D Cr$_3$O$_6$ and Mn$_3$O$_6$, where the calculated Tc is 218 K and 208 K, respectively. Our method offers a general approach to determine the expression of Heisenberg models for these 2D magnetic semiconductors and metals, and builds up a solid basis for further studies.

Magnetic semiconductors integrate the dual characteristics of magnets and semiconductors. It is difficult to manufacture magnetic semiconductors that function at room temperature. Here, we review a series of our recent theoretical predictions on room-temperature ferromagnetic semiconductors. Since the creation of two-dimensional (2D) magnetic semiconductors in 2017, there have been numerous developments in both experimental and theoretical investigations. By density functional theory calculations and model analysis, we recently predicted several 2D room-temperature magnetic semiconductors, including CrGeSe3 with strain, CrGeTe3/PtSe2 heterostructure, and technetium-based semiconductors (TcSiTe3, TcGeSe3, and TcGeTe3), as well as PdBr3 and PtBr3 with a potential room-temperature quantum anomalous Hall effect. Our findings demonstrated that the Curie temperature of these 2D ferromagnetic semiconductors can be dramatically enhanced by some external fields, such as strain, construction of heterostructure, and electric field. In addition, we proposed appropriate doping conditions for diluted magnetic semiconductors, and predicted the Cr doped GaSb and InSb as possible room-temperature magnetic semiconductors.

Ferrovalley materials with spontaneous valley polarization are crucial to valleytronic application. Based on first-principles calculations, we demonstrate that two-dimensional (2D) $\mathrm{Y}{X}_{2}(X=\mathrm{I}, \mathrm{Br}, \text{and} \mathrm{Cl})$ in a 2H structure constitutes a series of promising ferrovalley semiconductors with large spontaneous valley polarization and high magnetic transition temperature. Our calculations reveal that $\mathrm{Y}{X}_{2}$ are dynamically, energetically, thermally and mechanically stable 2D ferromagnetic semiconductors with a magnetic transition temperature about 200 K. Due to the natural noncentrosymmetric structure, intrinsic ferromagnetic order and strong spin orbital coupling, the large spontaneous valley polarizations of 108.98, 57.70, and 22.35 meV are also predicted in single-layer $\mathrm{Y}{X}_{2}(X=\mathrm{I}, \mathrm{Br}, \text{and} \mathrm{Cl})$, respectively. The anomalous valley Hall effect is also proposed based on the valley contrasting Berry curvature. Moreover, the ferromagnetism and valley polarization are found to be effectively tuning by applying a biaxial strain. Interestingly, the suppressed valley physics of ${\mathrm{YBr}}_{2}$ and ${\mathrm{YCl}}_{2}$ can be switched on via applying a moderate compression strain. The present findings promise $\mathrm{Y}{X}_{2}$ as competitive candidates for the further experimental studies and practical applications in valleytronics.

Two-dimensional (2D) semiconducting transition metal dichalcogenides can be used to make high-performance electronic, spintronic, and optoelectronic devices. Recently, room-temperature ferromagnetism and semiconduction in 2D VSe2 nanoflakes were attributed to the stable 2H-phase of VSe2 in the 2D limit. Here, our first-principles investigation shows that a metastable semiconducting H′ phase can be formed from the H VSe2 monolayer through uniaxial stress or uniaxial strain. The calculated phonon spectra indicate the dynamical stability of the metastable H′ VSe2 and the path of phase switching between the H and H′ VSe2 phases is calculated. For the uniaxial stress (or strain) scheme, the H′ phase can become lower in total energy than the H phase at a transition point. The H′ phase has stronger ferromagnetism and its Curier temperature can be enhanced by applying uniaxial stress or strain. Applying uniaxial stress or strain can substantially change spin-resolved electronic structures, energy band edges, and effective carrier masses for both of the H and H′ phases, and can cause some flat bands near the band edges in the strained H′ phase. Further analysis indicates that one of the Se–Se bonds in the H′ phase can be shortened by 19% and the related Se–V–Se bond angles are reduced by 23% with respect to those of the H phase, which is believed to increase the Se–Se covalence feature and reduce the valence of the nearby V atoms. Therefore, structural and bond reconstruction can be realized by applying uniaxial stress in such 2D ferromagnetic semiconductors for potential spintronic and optoelectronic applications.

Abstract The emergence of atomically thin valleytronic semiconductors and 2D ferromagnetic materials is opening up new technological avenues for future information storage and processing. A key fundamental challenge is to identify physical knobs that may effectively manipulate the spin‐valley polarization, preferably in the device context. Here, a novel spin functional device that exhibits both electrical and magnetic tunability is fabricated, by contacting a monolayer MoSe2 with a 2D ferromagnetic semiconductor Cr2Ge2Te6. Remarkably, the valley‐polarization of MoSe2 is found to be controlled by a back‐gate voltage with an appreciably enlarged valley splitting rate. At fixed gate voltages, the valley‐polarization exhibits magnetic‐field and temperature dependence that corroborates well with the intrinsic magnetic properties of Cr2Ge2Te6, pointing to the impact of magnetic exchange interactions. Due to the interfacial arrangement, the charge‐carrying trion photoemission predominates in the devices, which may be exploited to enable drift‐based spin‐optoelectronic devices. These results provide new insights into valley‐polarization manipulation in transition metal dichalcogenides by means of ferromagnetic semiconductor proximitizing and represent an important step forward in devising field‐controlled 2D magneto‐optoelectronic devices.

Hole-mediated ferromagnetic coupling in two-dimensional CrI3/VSe2 van der Waals heterostructures

Abstract Intrinsic 2D ferromagnetic semiconductors are an important class of materials for spin‐charge conversion applications. Cr2Ge2Te6 retains long‐range magnetic order in the bilayer at cryogenic temperatures and shows complex magnetic interactions with considerable magnetic anisotropy. Here, a series of structural, magnetic, X‐ray scattering, electronic, thermal transport and first‐principles calculation studies are performed, which reveal that localized electronic charge carriers in Cr2Ge2Te6 are dressed by the surrounding lattice and are involved in polaronic transport via hopping that is observed via magnetocrystalline anisotropy. This opens the possibility for manipulation of charge transport in Cr2Ge2Te6—based devices by electron–phonon‐ and spin–orbit coupling‐based tailoring of polaron properties.

The discovery of atomically thin two-dimensional (2D) magnetic semiconductors has triggered enormous research interest recently. In this work, we use first-principles many-body perturbation theory to study a prototypical 2D ferromagnetic semiconductor, monolayer chromium tribromide (CrBr$_3$). With broken time-reversal symmetry, spin-orbit coupling, and excitonic effects included through the full-spinor $GW$ and $GW$ plus Bethe-Salpeter equation ($GW$-BSE) methods, we compute the frequency-dependent layer polarizability tensor and dielectric function tensor that govern the optical and magneto-optical properties. In addition, we provide a detailed theoretical formalism for simulating magnetic circular dichroism, magneto-optical Kerr effect, and Faraday effect, demonstrating the approach with monolayer CrBr$_3$. Due to reduced dielectric screening in 2D and the localized nature of the Cr $d$ orbitals, we find strong self-energy effects on the quasiparticle band structure of monolayer CrBr$_3$ that give a 3.8 eV indirect band gap. Also, excitonic effects dominate the low-energy optical and magneto-optical responses in monolayer CrBr$_3$ where a large exciton binding energy of 2.3 eV is found for the lowest bright exciton state with excitation energy at 1.5 eV. We further find that the magneto-optical signals demonstrate strong dependence on the excitation frequency and substrate refractive index. Our theoretical framework for modeling optical and magneto-optical effects could serve as a powerful theoretical tool for future study of optoelectronic and spintronics devices consisting of van der Waals 2D magnets.

The FeCl2 monolayer: an appealing 2D ferromagnetic semiconductor with strong strain tunability.