Magnetization reversal in conventional ferro‐ and ferrimagnetic materials takes place through the growth of the energetically favorable domain state, which occurs at the expense of the less favorable domain state. This process results in the cancellation of the overall magnetization when the coercive field is reached. The mechanisms of magnetization reversal are crucial for numerous applications. Interestingly, the ability to control domains on demand during magnetization reversal represents a significant area of innovation, specifically in the field of antiferromagnetic spintronics, which has rendered ferromagnetic and antiferromagnetic nanoparticles both intriguing and highly beneficial. Herein, we report an advanced numerical approach based on matrix continued fractions to investigate the dynamics of magnetization reversal in single‐domain ferromagnetic and antiferromagnetic nanoparticles. By averaging the Gilbert–Langevin equation for individual particles, we establish the equilibrium correlation's set of linear differential‐recurrence relations by passing the traditional Fokker–Planck equation. Solving this system enables us to determine the relaxation time. Building upon earlier studies, the present work extends the analysis to a multiobjective framework that simultaneously accounts for extreme damping, reduced energy barriers, and field orientation effects, enabling a unified and quantitative comparison of relaxation pathways in ferro‐ and antiferromagnetic nanoparticles beyond previously reported regimes. Furthermore, unlike nanoparticles with uniaxial anisotropy, we demonstrate an inherent geometric dependence of the time of relaxation on the parameter's damping, which results from the reciprocal exchange between the longitudinal and transverse relaxation modes. While similarities between ferromagnetic and antiferromagnetic relaxation times in the high‐damping regime have been reported previously, the present work provides a unified and systematic multiparameter analysis that clarifies the roles of damping, geometry, and field orientation within a single computational framework.

ZnMgO thin films (0%–3% Mg) were deposited via ultrasonic spray pyrolysis and characterized from 40 to 320 K. Three conduction regimes were identified: Mott variable‐range hopping (VRH), nearest‐neighbor hopping (NNH), and thermally activated conduction. At 0% Mg, VRH dominates; at 1–2% Mg, VRH and NNH coexist; and at 3% Mg, NNH prevails. Key parameters include a density of states near the Fermi level of 5.7 × 10 19 cm −3 eV −1 (0% Mg) and 3.9 × 10 18 cm −3 eV −1 (1% Mg), localization lengths of 11.0 nm (0% Mg) and 23.4 nm (1% Mg), hopping energies of 3.1 meV (VRH, 0% Mg) and 4.8 meV (VRH, 1% Mg), and NNH activation energies from 5.5 meV (1% Mg) to 9.9 meV (3% Mg). High‐temperature activation energy increases from 26.9 to 70.2 meV. Optical measurements show bandgap widening from 3.264 to 3.308 eV, aligning with transport trends. These results advance ZnMgO conduction understanding for optoelectronic and sensing applications.

Aluminum nitride (AlN) is a promising candidate for surface passivation of AlGaN/GaN high electron mobility transistors to mitigate current collapse. High crystalline quality is essential to minimize the interface traps and bulk defects that cause current collapse and degrade device reliability. The quality of this passivation layer is highly dependent on growth conditions, particularly temperature and the Al/N flux ratio. This study systematically investigates the impact of these parameters on AlN films grown by radio‐frequency molecular beam epitaxy on GaN templates. We compare two growth regimes: one at a high temperature (700°C) and another at a low temperature (300°C). At 700°C, Al‐rich conditions (Al/N > 1) promote two‐dimensional growth, yielding smooth surfaces and high crystalline quality, although excessive Al results in surface droplet formation. In contrast, at 300°C, limited adatom mobility results in a three‐dimensional growth morphology, regardless of the Al/N ratio. Under Al‐rich conditions at 300°C, excess Al is incorporated into the film as a metallic layer, forming a strained Al/AlN structure that degrades crystalline quality, rather than forming surface droplets. These findings reveal fundamentally different growth mechanisms and defect incorporation pathways, which are dictated by temperature, establishing a critical baseline for developing low‐temperature AlN passivation strategies.

Using first‐principles calculations, we systematically investigated the structural, electronic, and optical properties of penta‐PdSe 2 and β‐phase penta‐PdPSe (monolayer to trilayer) and their heterostructures. Band structure analysis reveals a tunable bandgap in PdSe 2 that narrows with increasing layer thickness, while PdPSe remains metallic. Interestingly, the PdSe 2 /PdPSe heterostructure exhibits semiconducting behavior. Optically, PdSe 2 shows strong visible light absorption with a thickness‐dependent redshift, whereas PdPSe predominantly absorbs in the infrared, showing a corresponding blueshift. Stacking configurations are found to significantly modulate the heterostructure's absorption profile. Furthermore, doping bilayer PdSe 2 (with B, C, N, O at Pd/Se sites) induces diverse optical and electronic modifications. Transport simulations reveal a 10 9 ‐fold current enhancement in bilayer PdSe 2 and the heterostructure relative to the monolayer, alongside strong negative differential resistance in bilayer PdPSe. These findings underscore the high tunability of these systems, highlighting their potential for advanced optoelectronic applications.

Vanadium oxide films are coated on a cost‐effective soda‐lime glass substrates by chemical solution deposition. When the vanadium oxide films are deposited directly on the soda‐lime glass substrates, alkali elements from the substrate diffuse into the film during heat treatment, posing a significant issue. To suppress this diffusion, a SiO 2 layer is introduced between the vanadium oxide film and the substrate. The SiO 2 layer, also formed by chemical solution deposition, effectively inhibits the migration of alkali elements from the substrate, resulting in the formation of a single‐phase VO 2 film. The resulting VO 2 film exhibits excellent electrical property.

Gallium oxide (Ga 2 O 3 ) is an emerging wide bandgap semiconductor material that has garnered significant attention in the field of high‐voltage and high‐frequency power electronics. Five main crystalline phases of Ga 2 O 3 have been identified, including the corundum (α), monoclinic (β), defect spinel (γ), cubic (δ), and orthorhombic (ε) phases. Their thermodynamic stability follows the order of γ, δ, α, ε, and β. Notably, the monoclinic β‐Ga 2 O 3 phase is the most stable, particularly at high temperatures, while the other phases are metastable above room temperature and tend to transform into the β phase under specific thermal conditions. In this study, thin films were deposited using the radiofrequency sputtering technique at three different deposition times: 15, 30, and 60 min. The films were deposited onto p‐type silicon substrates with 300 W power processes. Six devices were fabricated from gallium oxide in the as‐deposited and annealed states. For analysis, Rutherford backscattering spectrometry techniques, scanning electron microscopy, and X‐ray diffraction were employed, confirming the β phase. Through UV–Vis spectroscopy, the reflectance of the material was obtained, enabling the calculation of the bandgap (∼4.36 eV). After depositing metallic contacts, the I – V curve was obtained to study the material nonlinear behavior. From the I – V results of the photomemristors, resistive switching and the photoelectric effect were observed. Gallium oxide is a wide bandgap material; however, it is sensitive to light due to defects in its structure. Such defects enable charge trapping and detrapping, which facilitate resistive switching. Impedance measurements were also performed.

Recently, new solar cells made from innovative materials have attracted significant interest. Nanostructures, including quantum dots, are a category of novel materials with diverse applications due to their controllable properties. In this study, quantum dot‐based solar cells are being investigated, with the model considered for the strained quantum dots being a quadrilateral shape. First, the absorption spectrum formula of quantum dots in the wavelength range of the solar spectrum is obtained by solving the Schrödinger equation for electrons and holes. Using these relationships, the photocurrent and internal quantum efficiency of the intrinsic region of the solar cell are calculated, and the effective key parameters of these quantities are investigated. The results show that quantum dots exhibit a significant nonlinear absorption coefficient, making them uniquely suitable for solar cell applications. Square‐shaped quantum dots enhance the internal quantum efficiency in solar cells. Furthermore, higher internal quantum efficiency can be achieved by reducing the size of quantum dots.

This work presents a comprehensive computational study of InSb topological superconductor nanowires (TSNWs) as promising candidates for realizing Majorana zero modes (MZMs), which are essential for the practical realization of fault‐tolerant topological quantum computing (TQC). Using a tight‐binding effective mass model and nonequilibrium Green's function formalism, electronic and quantum transport properties of disorder‐free InSb TSNWs are analyzed for various device lengths, electrochemical potentials ( μ ), and magnetic (Zeeman) fields ( V z ). Optimum operating regimes are identified where well‐localized and spatially separated MZMs emerge, as indicated by zero‐energy eigenstates, sharp peaks in the local density of states, and quantized zero‐bias conductance peaks. Coherence time and excitation time metrics are calculated to assess the viability of qubit manipulation and error suppression. It is found that disorder‐free InSb TSNWs in the 3 to 5 μm length range are technologically relevant for high‐performance TQC due to suitable MZM localization and coherence characteristics, but only if μ is negative and close in magnitude to the superconductor pairing and if V z is not set deep inside the topological phase. Our findings could provide valuable guidance for future experiments related to Majorana‐based qubits in one‐dimensional InSb hybrid systems.